US9299941B2 - Organic semiconductor device and method of manufacturing the same - Google Patents
Organic semiconductor device and method of manufacturing the same Download PDFInfo
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- US9299941B2 US9299941B2 US13/348,246 US201213348246A US9299941B2 US 9299941 B2 US9299941 B2 US 9299941B2 US 201213348246 A US201213348246 A US 201213348246A US 9299941 B2 US9299941 B2 US 9299941B2
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H01L51/105—
-
- H01L51/0525—
-
- H01L51/0545—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
Definitions
- Example embodiments relate to an organic semiconductor device and a method of manufacturing the same.
- a flat panel display e.g., a liquid crystal display (LCD), an organic light emitting diode (OLED) display, and/or an electrophoretic display, includes multiple pairs of field generating electrodes and an electro-optical active layer interposed therebetween.
- the liquid crystal display (LCD) includes an electro-optical active layer of a liquid crystal layer
- the organic light emitting diode (OLED) display includes an electro-optical active layer of an organic emission layer.
- One of paired field generating electrodes is generally connected to a switching element and applied with an electrical signal, and the electro-optical active layer transforms the electrical signal to an optical signal to display an image.
- the flat panel display includes a three-terminal element of a thin film transistor (TFT) as a switching element, and also a gate line transferring a scan signal for controlling the thin film transistor and a data line transferring a data signal to be applied to a pixel electrode.
- TFT thin film transistor
- an organic thin film transistor including an organic semiconductor instead of the inorganic semiconductor, e.g., silicon (Si), has been actively researched.
- the organic thin film transistor may be shaped in a fiber or a film according to the organic material characteristic, so the OTFT has drawn attention for flexible display devices.
- the organic semiconductor device e.g., an organic solar cell, and/or an organic sensor, includes an organic semiconductor and a metal electrode.
- the contact resistance may be increased when the organic semiconductor directly contacts the metal electrode.
- the available kinds of metals for an electrode are limited depending upon the physical properties of the organic semiconductor, so low resistance metals that are relatively generally used are limited in use, and high cost metals, e.g., gold (Au) are used, causing an increase of process cost.
- Example embodiments provide organic semiconductor device of which the process cost is reduced while the contact resistance between the organic semiconductor and the metal electrode is decreased to improve the device characteristics.
- Example embodiments also provide a method of manufacturing an organic semiconductor device.
- an organic semiconductor device may include an electrode electrically connected to an organic semiconductor, and a self-assembled monolayer positioned between the organic semiconductor and the electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end.
- the anchor group may be on a side of the electrode, and the ionic functional group may be on a side of the organic semiconductor.
- the ionic functional group may include cations, and the self-assembled monolayer may include anions configured to form a pair with the cations.
- the cations may include at least one of substituted or unsubstituted ammonium cations, substituted or unsubstituted sulfonium cations, sodium cations, and a combination thereof
- the anions may include at least one of bromine anions, borate anions, halide, perchlorate anions, phosphate anions, sulfonate anions, nitrate anions, amide anions, and a combination thereof.
- the anions may include at least one of trifluoromethane sulfonate, trifluoromethanesulfonylamide, tetrakis(1-imidazolyl)borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, BF 4 ⁇ , PF 6 ⁇ , AlCl 4 ⁇ , Al 2 Cl 7 ⁇ , NO 3 ⁇ , and a combination thereof.
- the ionic functional group may include anions, and the self-assembled monolayer may include cations configured to form a pair with the anions.
- the anions may include at least one of bromine anions, borate anions, halide, perchlorate anions, phosphate anions, sulfonate anions, nitrate anions, amide anions, and a combination thereof
- the cations may include at least one of substituted or unsubstituted ammonium cations, substituted or unsubstituted sulfonium cations, sodium cations, and a combination thereof.
- the anchor group may include at least one of —SH, —SOR 1 , and a combination thereof, wherein R 1 is at least one of hydrogen, substituted or unsubstituted C 1 to C 30 alkyl group, substituted or unsubstituted C 1 to C 30 aryl group, and a combination thereof.
- the self-assembled monolayer may include a monomer represented by the following Chemical Formula 1 or 2: AC-L-X 1 + X 2 ⁇ [Chemical Formula 1] AC-L-X 3 ⁇ X 4 + [Chemical Formula 2]
- R 1 may be at least one of hydrogen, substituted or unsubstituted C 1 to C 30 alkyl group, substituted or unsubstituted C 1 to C 30 aryl group, and a combination thereof,
- X 1 + is a cation and X 2 ⁇ is an anion configured to form a pair with X 1 +
- X 3 ⁇ is an anion and
- X 4 + is a cation configured to form a pair with X 3 ⁇
- L is at least one of a single bond, a substituted or unsubstituted C 1 to C 30 alkylene group, a substituted or unsubstituted C 3 to C 30 cycloalkylene group, a substituted or unsubstituted C 6 to C 30 arylene group, a substituted or unsubstituted C 3 to C 30 cycloalkenylene
- the self-assembled monolayer may have a bottom contact structure contacting the organic semiconductor at a bottom surface of the organic semiconductor.
- the electrode may include at least one of gold (Au), copper (Cu), nickel (Ni), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), and an alloy thereof.
- the self-assembled monolayer may have a thickness of about 2 to about 100 ⁇ .
- the organic semiconductor device may include at least one of an organic thin film transistor, an organic solar cell, and an organic sensor.
- a method of manufacturing an organic semiconductor device may include providing a self-assembled monolayer on a electrode, the self-assembled monolayer including a monomer having an anchor group at one end and an ionic functional group at another end, and providing an organic semiconductor on the self-assembled monolayer.
- Providing the self-assembled monolayer may include providing the monomer having the anchor group on the electrode to attach the anchor group on a surface of the electrode, and providing the other end of the monomer with the ionic functional group.
- Providing the monomer on the electrode may include performing at least one method including spin coating, dip coating, and chemical vapor deposition (CVD).
- Providing the other end of the monomer with the ionic functional group may include at least one of binding cations with anions in pairs, and binding anions with cations in pairs.
- FIG. 1 is a cross-sectional view showing the organic thin film transistor according to example embodiments.
- FIG. 2 is a schematic view showing one example of a self-assembled monolayer according to example embodiments.
- FIG. 3 to FIG. 6 are cross-sectional views sequentially showing the method of manufacturing the organic thin film transistor of FIG. 1 .
- FIG. 7 is a cross-sectional view showing the organic thin film transistor according to example embodiments.
- FIG. 8 to FIG. 11 are cross-sectional views sequentially showing the method of manufacturing the organic thin film transistor of FIG. 7 .
- FIG. 12 is a graph showing current characteristics according to gate voltage of the organic thin film transistor according to example embodiments.
- FIG. 13 is a graph showing current characteristics according to gate voltage of the organic thin film transistor of the Comparative Example.
- FIG. 14 is a graph showing current characteristics according to gate voltage and drain voltage of the organic thin film transistor according to example embodiments.
- FIG. 15 is a graph showing current characteristics according to gate voltage of the organic thin film transistor of the Comparative Example.
- FIG. 16 is a graph showing resistances according to channel lengths of the organic thin film transistor according to example embodiments.
- FIG. 17 is a graph showing resistances according to channel lengths of the organic thin film transistor of the Comparative Example.
- first”, “second”, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of example embodiments.
- spatially relative terms such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary term “below” can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
- Example embodiments are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of example embodiments. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region illustrated as a rectangle will, typically, have rounded or curved features and/or a gradient of implant concentration at its edges rather than a binary change from implanted to non-implanted region.
- a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation takes place.
- the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
- FIG. 1 is a cross-sectional view showing the organic thin film transistor according to example embodiments.
- a gate electrode 124 may be formed on a substrate 110 made of, for example, transparent glass, silicon, or plastic.
- the gate electrode 124 may be connected to a gate line (not shown) transferring a gate signal.
- a gate insulating layer 140 may be formed on the gate electrode 124 .
- the gate insulating layer 140 may be made of an organic material or an inorganic material.
- the organic material may include a soluble polymer compound, e.g., a polyvinyl alcohol-based compound, a polyimide-based compound, a polyacryl-based compound, a polystyrene-based compound, and benzocyclobutane (BCB), and examples of the inorganic material may include silicon nitride (SiN x ), aluminum oxide (Al 2 O 3 ), and silicon oxide (SiO 2 ).
- a source electrode 173 and a drain electrode 175 may be formed on the gate insulating layer 140 .
- the source electrode 173 and the drain electrode 175 may face each other in the center of the gate electrode 124 .
- the source electrode 173 may be electrically connected to the data line (not shown) transferring the data signal.
- the source electrode 173 and the drain electrode 175 may include at least one metal of gold (Au), copper (Cu), nickel (Ni), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or an alloy thereof.
- An organic semiconductor 154 may be formed on the source electrode 173 and the drain electrode 175 .
- the organic semiconductor 154 may be formed of at least one of pentacene and a precursor thereof, tetrabenzoporphyrin and a derivative thereof, polyphenylenevinylene and a derivative thereof, polyfullerene and a derivative thereof, polythienylenevinylene and a derivative thereof, polythiophene and a derivative thereof, polythiazole and a derivative thereof, polythienothiophene and a derivative thereof, polyarylamine, and a derivative thereof, phthalocyanine and a derivative thereof, metallized phthalocyanine or a halogenated derivative thereof, perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA) or an imide derivative thereof, perylene, or coronene or a derivative including a substituent thereof, and copolymer thereof.
- Self-assembled monolayers (SAM) 163 and 165 may be formed between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 .
- the self-assembled monolayers 163 and 165 have a bottom contact structure contacting the organic semiconductor 154 at the bottom of the organic semiconductor 154 .
- the self-assembled monolayers 163 and 165 are described with reference to FIG. 2 .
- FIG. 2 is a schematic diagram showing one example of a self-assembled monolayer according to example embodiments.
- the self-assembled monolayers 163 and 165 have a structure in which a plurality of monomers 50 a are substantially vertically aligned with regard to the substrate.
- Each monomer 50 a may have one end having an anchor group (A) and the other end having an ionic functional group (I).
- the anchor group (A) may be aligned on the side of the source electrode 173 and the drain electrode 175
- the ionic functional group (I) may be aligned on the side of the organic semiconductor 154 .
- the anchor group (A) may be a functional group that is capable of being self-aligned on the source electrode 173 and the drain electrode 175 , and may include, for example, —SH, —SOR 1 , or a combination thereof.
- R 1 may be hydrogen, substituted or unsubstituted C 1 to C 30 alkyl group, substituted or unsubstituted C 1 to C 30 aryl group, or a combination thereof.
- the ionic functional group (I) may include cations or anions. When the ionic functional group (I) includes cations, the ionic functional group (I) also includes anions forming a pair with the cations.
- the cations may include substituted or unsubstituted ammonium ion, substituted or unsubstituted sulfonium ion, sodium ion, or a combination thereof
- the pairing anions may include bromine anions, borate anions, halide, perchlorate anions, phosphate anions, sulfonate anions, nitrate anions, amide anions, or a combination thereof.
- the anions may include, for example, trifluoromethane sulfonate represented by the following Chemical Formula A, trifluoromethanesulfonylamide, tetrakis(1-imidazolyl)borate represented by the following Chemical Formula B, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate represented by the following Chemical Formula C, BF 4 ⁇ , PF 6 ⁇ , AlCl 4 ⁇ , Al 2 Cl 7 ⁇ , NO 3 ⁇ , or a combination thereof.
- Chemical Formula A trifluoromethane sulfonate represented by the following Chemical Formula A
- trifluoromethanesulfonylamide represented by the following Chemical Formula B
- tetrakis[3,5-bis(trifluoromethyl)phenyl]borate represented by the following Chemical Formula C, BF 4 ⁇ , PF 6 ⁇ , AlCl 4 ⁇ , Al 2 Cl 7 ⁇ , NO 3
- the ionic functional group (I) may include the cations forming a pair with the anions.
- the anions may include bromine anions, borate anions, halide, perchlorate anions, phosphate anions, sulfonate anions, nitrate anions, amide anions, or a combination thereof
- the cations may include substituted or unsubstituted ammonium ion, substituted or unsubstituted sulfonium ion, sodium ion, or a combination thereof.
- the anions may include, for example, trifluoromethane sulfonate, trifluoromethanesulfonylamide, tetrakis(1-imidazolyl)borate, tetrakis[3,5-bis(trifluoromethyl)phenyl]borate, BF 4 ⁇ , PF 6 ⁇ , AlCl 4 ⁇ , AlCl 7 ⁇ , NO 3 ⁇ , or a combination thereof.
- the self-assembled monolayers 163 and 165 may include a monomer represented by the following Chemical Formula 1 or Chemical Formula 2.
- AC is —SH, —SOR 1 (R 1 may be hydrogen, substituted or unsubstituted C 1 to C 30 alkyl group, substituted or unsubstituted C 1 to C 30 aryl group, or a combination thereof), or a combination thereof, which is an anchor group that is capable of being self-aligned on the source electrode 173 and the drain electrode 175
- R 1 + is a cation and X 2 ⁇ is an anion being in a pair with X 1 +
- X 3 ⁇ is an anion and X 4 + is a cation being in a pair with X 3 ⁇
- L is a linking group that links the anchor group and ionic functional group, and is a single bond, a substituted or unsubstituted C 1 to C 30 alkylene group, a substituted or unsubstituted C 3 to C 30 cycloalkylene group, a substituted or unsubsti
- the self-assembled monolayers 163 and 165 may have a thickness as the length of monomer 50 a , for example, a thickness of about 2 to 100 ⁇ .
- the self-assembled monolayers 163 and 165 may act as a charge injecting layer between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 to decrease the contact resistance therebetween, thereby increasing the charge mobility.
- the self-assembled monolayers 163 and 165 decrease the contact resistance between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 , so that the self-assembled monolayers 163 and 165 may prevent or reduce limitations of a metal that is capable of being used as an electrode. Thereby, a comparative inexpensive low-resistance metal may be applied to reduce the process cost.
- FIG. 3 to FIG. 6 are cross-sectional views sequentially showing the method of manufacturing the organic thin film transistor of FIG. 1 .
- a conductive layer may be formed on the substrate 110 by, for example, sputtering, and undergoes photolithography to provide a gate electrode 124 .
- a gate insulating layer 140 may be formed on the gate electrode 124 .
- the gate insulating layer 140 may be formed by a solution process, for example, spin coating.
- a conductive layer may be formed on the gate insulating layer 140 by, for example, sputtering, and undergoes photolithography to provide a source electrode 173 and a drain electrode 175 .
- self-assembled monolayers 163 and 165 may be formed on the source electrode 173 and the drain electrode 175 , respectively.
- the self-assembled monolayers 163 and 165 provide a monomer having an anchor group on the source electrode 173 and the drain electrode 175 to fix the anchor group on the source electrode 173 and the drain electrode 175 , and the other end of the monomer is provided with an ionic functional group.
- Providing the monomer having one end of an anchor group on the source electrode 173 and the drain electrode 175 may be performed, for example, by dissolving a monomer having an anchor group in a solvent to provide a solution, coating the solution by a solution process, e.g., dip coating or spin coating, and drying the same.
- the anchor group may be self-aligned on the surface of source electrode 173 and drain electrode 175 .
- the other end of monomer may be substituted by the ionic functional group.
- providing the monomer having one end of an anchor group on the source electrode 173 and the drain electrode 175 may be performed, for example, by providing a monomer having an anchor group at one end by chemical vapor deposition (CVD) and substituting the other end of monomer with an ionic functional group.
- CVD chemical vapor deposition
- the substituting the other end of the monomer with an ionic functional group may be performed by, for example, quaternarization synthesis of reacting a tertiary amine included in the other end of the monomer with, for example, methyl iodine or methyl bromine.
- an organic semiconductor 154 may be formed on the self-assembled monolayers 163 and 165 .
- the organic semiconductor 154 may be formed by a dry process, e.g., chemical vapor deposition (CVD), or a solution process, e.g., spin coating, or inkjet printing.
- CVD chemical vapor deposition
- solution process e.g., spin coating, or inkjet printing.
- FIG. 7 is a cross-sectional view showing the organic thin film transistor according to example embodiments.
- a source electrode 173 and a drain electrode 175 may be formed on a substrate 110 made of transparent glass, silicon, or plastic.
- the source electrode 173 and the drain electrode 175 may face each other while leaving a predetermined or given interval therebetween.
- the source electrode 173 may be electrically connected with a data line (not shown) transferring the data signal.
- the source electrode 173 and the drain electrode 175 may include at least one metal of gold (Au), copper (Cu), nickel (Ni), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), or an alloy thereof.
- An organic semiconductor 154 may be formed on the source electrode 173 and the drain electrode 175 .
- the organic semiconductor 154 may be formed of at least one of pentacene and a precursor thereof, tetrabenzoporphyrin and a derivative thereof, polyphenylenevinylene and a derivative thereof, polyfullerene and a derivative thereof, polythienylenevinylene and a derivative thereof, polythiophene and a derivative thereof, polythiazole and a derivative thereof, polythienothiophene and a derivative thereof, polyarylamine and a derivative thereof, phthalocyanine and a derivative thereof, metallized phthalocyanine or a halogenated derivative thereof, perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA) or an imide derivative thereof; perylene, or coronene or a derivative including a substituent thereof, and a copolymer thereof.
- Self-assembled monolayers 163 and 165 may be formed between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 .
- the self-assembled monolayers 163 and 165 may have a bottom contact structure contacting the organic semiconductor 154 at the bottom of the organic semiconductor 154 .
- the self-assembled monolayers 163 and 165 may include a monomer having one end of an anchor group and the other end of an ionic functional group.
- the anchor group may be self-aligned on the side of the source electrode 173 and the drain electrode 175
- the ionic functional group may be aligned on the side of the organic semiconductor 154 .
- the monomer may be substantially vertically aligned with respect to the substrate.
- the anchor group may be a functional group that is capable of being self-aligned on the source electrode 173 and the drain electrode 175 .
- the functional group may include, for example, a thiol group.
- the ionic functional group may include cations or anions. When the ionic functional group includes cations, the ionic functional group may also include anions forming a pair with the cations. When the ionic functional group includes anions, the ionic functional group may also include cations forming a pair with the anions.
- the self-assembled monolayers 163 and 165 may include a monomer represented by the following Chemical Formula 1 or Chemical Formula 2.
- AC is —SH, —SOR 1 (R 1 may be hydrogen, substituted or unsubstituted C 1 to C 30 alkyl group, substituted or unsubstituted C 1 to C 30 aryl group, or a combination thereof), or a combination thereof, which is an anchor group that is capable of being self-aligned on the source electrode 173 and the drain electrode 175 ,
- X 1 + is a cation and X 2 ⁇ is an anion being a pair with X 1 + , as mentioned above, X 3 ⁇ is an anion and X 4 + is a cation being a pair with X 3 ⁇ , as mentioned above, and L is a linking group that links the anchor group and ionic functional group and is a single bond, a substituted or unsubstituted C 1 to C 30 alkylene group, a substituted or unsubstituted C 3 to C 30 cycloalkylene group, a substituted or unsubstituted C 6 to C 30 arylene group, a substituted or unsubstituted C 3 to C 30 cycloalkenylene group, a substituted or unsubstituted C 7 to C 20 an arylalkylene group, a substituted or unsubstituted C 1 to C 20 heteroalkylene group, a substituted or unsubstituted C 2 to C 30 heterocycloal
- the self-assembled monolayers 163 and 165 may have a thickness the same as the length of the monomer 50 a , for example, a thickness of about 2 to 100 ⁇ .
- the self-assembled monolayers 163 and 165 may act as a charge injecting layer between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 to decrease the contact resistance therebetween and to increase the charge mobility.
- the self-assembled monolayers 163 and 165 decrease the contact resistance between the organic semiconductor 154 and the source electrode 173 and between the organic semiconductor 154 and the drain electrode 175 , so the self-assembled monolayers 163 and 165 may prevent or reduce limitations of a metal applied to an electrode depending upon the organic semiconductor characteristics.
- a relatively low resistance metal which is relatively inexpensive, may be applied to reduce the process costs.
- a gate insulating layer 140 may be formed on the organic semiconductor 154 .
- the gate insulating layer 140 may be made of an organic material or an inorganic material.
- the organic material may include a soluble polymer compound, e.g., a polyvinyl alcohol-based compound, a polyimide-based compound, a polyacryl-based compound, a polystyrene-based compound, and benzocyclobutane (BCB), and examples of the inorganic material may include silicon nitride (SiN x ), silicon oxide (SiO 2 ) and aluminum oxide (AlOx).
- a gate electrode 124 may be formed on the gate insulating layer 140 .
- FIG. 8 to FIG. 11 are cross-sectional views sequentially showing the method of manufacturing the organic thin film transistor of FIG. 7 .
- a conductive layer may be formed on the substrate 110 by, for example, sputtering, and undergoes photolithography to provide a source electrode 173 and a drain electrode 175 .
- self-assembled monolayers 163 and 165 may be formed on the source electrode 173 and the drain electrode 175 , respectively.
- a monomer having an anchor group is aligned on the source electrode 173 and the drain electrode 175 by attaching the anchor group on the surfaces of the source electrode 173 and the drain electrode 175 , and the other end of the monomer is substituted with an ionic functional group.
- Providing the monomer having an anchor group on the source electrode 173 and the drain electrode 175 may be performed by dissolving the monomer having an anchor group in a solvent to provide a solution, coating the solution by a solution process, e.g., dip coating, or spin coating, and drying the same.
- the anchor group may be self-aligned on the surface of the source electrode 173 and the drain electrode 175 .
- the other end of the monomer may be substituted with the ionic functional group.
- the monomer having an anchor group on the source electrode 173 and the drain electrode 175 may be formed by, for example, providing a monomer having an anchor group at one end by chemical vapor deposition (CVD) and substituting the other end of the monomer with the ionic functional group.
- CVD chemical vapor deposition
- an organic semiconductor 154 may be formed on the self-assembled monolayers 163 and 165 .
- the organic semiconductor 154 may be formed by a dry process, e.g., chemical vapor deposition (CVD), or a solution process, e.g., spin coating, or inkjet printing.
- a gate insulating layer 140 may be formed on the organic semiconductor 154 .
- the gate insulating layer 140 may be formed by a solution process, e.g., spin coating.
- a conductive layer may be formed on the gate insulating layer 140 by, for example, sputtering, and undergoes photolithography to provide a gate electrode 124 .
- the organic thin film transistor according to example embodiments may be applied to all organic semiconductor devices that include an organic semiconductor and an electrode, for example, an organic solar cell, and/or an organic sensor.
- Molybdenum (Mo) layer is deposited on a glass substrate by sputtering and patterned to form a gate electrode.
- a silicon oxide film may be formed on the gate electrode by chemical vapor deposition (CVD) with a 300 nm thickness to form a gate insulator.
- the substrate is dipped in the solution for 30 min, and then washed using methyl alcohol to form a self-assembled monolayer on the source and the drain electrodes.
- An organic semiconductor solution including a thiophene-thiazole based copolymer is dropped on the self-assembled monolayer by an inkjet printing method and dried to form an organic semiconductor.
- An organic thin film transistor is manufactured by the same method as the Example, except that the self-assembled monolayer is not formed.
- FIG. 12 is a graph showing current characteristics according to gate voltage of the organic thin film transistor of the Example
- FIG. 13 is a graph showing current characteristics according to gate voltage of the organic thin film transistor of the Comparative Example.
- the organic thin film transistor according to the Example has improved current characteristics compared with the organic thin film transistor according to Comparative Example.
- the organic thin film transistor according to the Example has higher charge mobility than that of the organic thin film transistor according to the Comparative Example.
- FIG. 14 is a graph showing current characteristics according to gate voltage and drain voltage of the organic thin film transistor of the Example
- FIG. 15 is a graph showing current characteristics according to gate voltage of the organic thin film transistor of the Comparative Example.
- FIG. 16 is a graph showing resistances according to channel lengths of the organic thin film transistor of the Example
- FIG. 17 is a graph showing resistances according to channel lengths of the organic thin film transistor of the Comparative Example.
- the organic thin film transistor according to the Example has lower contact resistance than the organic thin film transistor according to the Comparative Example.
- R T is a total resistance
- R c is a contact resistance
- L is a channel length
- r ch is a channel resistance
- the organic thin film transistor according to the Example has a contact resistance (R c ) of about 0.395 M ⁇ (395 k ⁇ )
- the organic thin film transistor according to the Comparative Example has a contact resistance (R c ) of about 0.620 M ⁇ (620 k ⁇ ). From the results, the organic thin film transistor according to the Example has a lower contact resistance than the organic thin film transistor according to the Comparative Example.
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
AC-L-X1 +X2 − [Chemical Formula 1]
AC-L-X3 −X4 + [Chemical Formula 2]
AC-L-X1 +X2 − [Chemical Formula 1]
AC-L-X3 −X4 + [Chemical Formula 2]
AC-L-X1 +X2 − [Chemical Formula 1]
AC-L-X3 −X4 + [Chemical Formula 2]
TABLE 1 | |||
Charge Mobility(cm2/Vs) | |||
Example | 0.14 | ||
Comparative Example | 0.11 | ||
R T=2R C +Lr ch [Equation]
Claims (12)
AC-L-X1
AC-L-X3
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