CN101097917B - 静电放电保护电路和终端电阻电路 - Google Patents
静电放电保护电路和终端电阻电路 Download PDFInfo
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- CN101097917B CN101097917B CN2007101275092A CN200710127509A CN101097917B CN 101097917 B CN101097917 B CN 101097917B CN 2007101275092 A CN2007101275092 A CN 2007101275092A CN 200710127509 A CN200710127509 A CN 200710127509A CN 101097917 B CN101097917 B CN 101097917B
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- 230000005540 biological transmission Effects 0.000 claims abstract description 169
- 238000009792 diffusion process Methods 0.000 claims description 63
- 230000003068 static effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000007704 transition Effects 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 3
- 239000003990 capacitor Substances 0.000 description 40
- 238000010586 diagram Methods 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 14
- 230000005012 migration Effects 0.000 description 12
- 238000013508 migration Methods 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 11
- 230000014509 gene expression Effects 0.000 description 8
- 230000009466 transformation Effects 0.000 description 8
- 230000003111 delayed effect Effects 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000008054 signal transmission Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006177842A JP5053579B2 (ja) | 2006-06-28 | 2006-06-28 | 静電気放電保護回路 |
JP2006-177842 | 2006-06-28 | ||
JP2006177842 | 2006-06-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101097917A CN101097917A (zh) | 2008-01-02 |
CN101097917B true CN101097917B (zh) | 2011-01-19 |
Family
ID=39011579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101275092A Active CN101097917B (zh) | 2006-06-28 | 2007-06-28 | 静电放电保护电路和终端电阻电路 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7791852B2 (zh) |
JP (1) | JP5053579B2 (zh) |
KR (1) | KR100892328B1 (zh) |
CN (1) | CN101097917B (zh) |
TW (1) | TWI355730B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019345B4 (de) * | 2004-04-21 | 2007-02-08 | Austriamicrosystems Ag | Ausgangsstufenanordnung |
JP4536788B2 (ja) * | 2008-04-02 | 2010-09-01 | 株式会社デンソー | 半導体装置 |
JP5578805B2 (ja) * | 2008-05-19 | 2014-08-27 | キヤノン株式会社 | 半導体集積回路の保護回路及びその駆動方法 |
US8300378B2 (en) * | 2008-09-19 | 2012-10-30 | Advanced Fusion Systems, Llc | Method and apparatus for protecting power systems from extraordinary electromagnetic pulses |
US8248740B2 (en) * | 2008-09-19 | 2012-08-21 | Advanced Fusion Systems, Llc | High speed current shunt |
EP2590200B1 (en) * | 2008-09-19 | 2015-08-19 | Advanced Fusion Systems LLC | High speed current shunt |
JP5547441B2 (ja) * | 2009-08-10 | 2014-07-16 | 旭化成エレクトロニクス株式会社 | 保護回路 |
US8400743B2 (en) * | 2010-06-30 | 2013-03-19 | Advanced Micro Devices, Inc. | Electrostatic discharge circuit |
CN102832899B (zh) * | 2011-06-15 | 2015-01-14 | 台达电子工业股份有限公司 | 智能终端电阻装置 |
US8520348B2 (en) * | 2011-12-22 | 2013-08-27 | Lsi Corporation | High-swing differential driver using low-voltage transistors |
US8928365B2 (en) | 2012-10-23 | 2015-01-06 | Qualcomm Incorporated | Methods and devices for matching transmission line characteristics using stacked metal oxide semiconductor (MOS) transistors |
CN103035624B (zh) * | 2012-12-14 | 2016-08-03 | 广东风华芯电科技股份有限公司 | 静电防护装置及其芯片 |
US9401324B2 (en) | 2013-07-05 | 2016-07-26 | Kabushiki Kaisha Toshiba | Semiconductor device having an on die termination circuit |
US9660643B2 (en) | 2015-05-28 | 2017-05-23 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method and apparatus to improve power device reliability |
JP6042962B2 (ja) * | 2015-11-27 | 2016-12-14 | ルネサスエレクトロニクス株式会社 | 差動出力回路および半導体装置 |
MX2018007707A (es) * | 2015-12-22 | 2018-11-09 | Thermatool Corp | Sistema de suministro de energia de alta frecuencia con salida muy regulada para calentar una pieza de trabajo. |
US10298010B2 (en) * | 2016-03-31 | 2019-05-21 | Qualcomm Incorporated | Electrostatic discharge (ESD) isolated input/output (I/O) circuits |
JP2017212870A (ja) * | 2016-05-20 | 2017-11-30 | 株式会社デンソー | スイッチング素子の駆動制御装置 |
CA3043569A1 (en) * | 2016-11-11 | 2018-05-17 | Bombardier Inc. | Signal return network for composite aircraft |
JP6476260B2 (ja) * | 2017-10-17 | 2019-02-27 | ルネサスエレクトロニクス株式会社 | 差動出力回路 |
TWI670617B (zh) * | 2018-10-31 | 2019-09-01 | 財團法人工業技術研究院 | 模擬系統與方法 |
CN111031661B (zh) * | 2019-12-30 | 2020-12-25 | 业成光电(无锡)有限公司 | 柔性电路板、可穿戴装置及电子设备 |
CN111542165B (zh) * | 2020-06-29 | 2023-09-05 | 西安易朴通讯技术有限公司 | 静电防护系统、方法、电子设备及存储介质 |
US11911670B2 (en) | 2022-05-13 | 2024-02-27 | Karsten Manufacturing Corporation | Compact putter head |
USD1028149S1 (en) | 2022-06-24 | 2024-05-21 | Karsten Manufacturing Corporation | Golf club head |
USD1033579S1 (en) | 2022-09-09 | 2024-07-02 | Karsten Manufacturing Corporation | Golf club head |
CN117291139B (zh) * | 2023-11-27 | 2024-07-30 | 成都锐成芯微科技股份有限公司 | 版图布局优化的dcdc稳压器 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1278372A (zh) * | 1997-11-17 | 2000-12-27 | 艾利森电话股份有限公司 | 单片高频压控振荡器微调电路 |
US6262591B1 (en) * | 2000-05-30 | 2001-07-17 | International Business Machines Corporation | SOI small signal terminated receiver |
US6362497B1 (en) * | 1999-01-08 | 2002-03-26 | Rohm Co., Ltd. | Semiconductor integrated circuit having ESD/EOS protection |
CN1354516A (zh) * | 2000-11-16 | 2002-06-19 | 世界先进积体电路股份有限公司 | 静电放电防护元件及相关的电路 |
US6690066B1 (en) * | 2002-10-18 | 2004-02-10 | Texas Instruments Incorporated | Minimization and linearization of ESD parasitic capacitance in integrated circuits |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3803204B2 (ja) * | 1998-12-08 | 2006-08-02 | 寛治 大塚 | 電子装置 |
JP3423267B2 (ja) * | 2000-01-27 | 2003-07-07 | 寛治 大塚 | ドライバ回路、レシーバ回路、および信号伝送バスシステム |
JP4360733B2 (ja) | 2000-03-07 | 2009-11-11 | シャープ株式会社 | 配線構造 |
JP2001327069A (ja) * | 2000-05-18 | 2001-11-22 | Nec Saitama Ltd | サージ保護装置及びサージ保護方法、伝送装置 |
JP2002141421A (ja) * | 2000-10-31 | 2002-05-17 | Toshiba Corp | 半導体集積回路装置 |
JP3703725B2 (ja) * | 2001-03-01 | 2005-10-05 | 寛治 大塚 | バス終端方法、終端抵抗器、配線基板およびその製造方法 |
JP2002261843A (ja) * | 2001-03-02 | 2002-09-13 | Ricoh Co Ltd | 差動信号伝送回路 |
JP2003197754A (ja) * | 2001-12-26 | 2003-07-11 | Mitsubishi Electric Corp | 高周波半導体装置 |
JP2004071991A (ja) * | 2002-08-08 | 2004-03-04 | Fujitsu Ltd | 半導体集積回路装置 |
JP2004146403A (ja) | 2002-10-21 | 2004-05-20 | Advantest Corp | 伝送回路、cmos半導体デバイス、及び設計方法 |
JP4719412B2 (ja) * | 2002-11-15 | 2011-07-06 | パナソニック株式会社 | 半導体差動回路、それを用いた発振装置、増幅装置、スイッチ装置、ミキサ装置、回路装置、半導体差動回路の配置方法 |
JP4192009B2 (ja) * | 2003-02-24 | 2008-12-03 | 寛治 大塚 | 電子回路装置 |
US6815980B2 (en) * | 2003-02-27 | 2004-11-09 | International Business Machines Corporation | Termination circuit for a differential transmission line |
JP4421849B2 (ja) * | 2003-07-22 | 2010-02-24 | 株式会社デンソー | 入力保護回路 |
JP2005051496A (ja) * | 2003-07-28 | 2005-02-24 | Kanji Otsuka | 信号伝送システム及び信号伝送線路 |
JP4201665B2 (ja) | 2003-08-06 | 2008-12-24 | 株式会社ルネサステクノロジ | 信号伝送装置 |
JP2006147961A (ja) | 2004-11-22 | 2006-06-08 | Elpida Memory Inc | 半導体集積回路 |
US7368938B2 (en) * | 2006-06-15 | 2008-05-06 | Integrated Device Technology, Inc. | Input termination circuitry with high impedance at power off |
-
2006
- 2006-06-28 JP JP2006177842A patent/JP5053579B2/ja active Active
-
2007
- 2007-06-27 TW TW096123257A patent/TWI355730B/zh active
- 2007-06-28 US US11/819,579 patent/US7791852B2/en active Active
- 2007-06-28 CN CN2007101275092A patent/CN101097917B/zh active Active
- 2007-06-28 KR KR1020070064710A patent/KR100892328B1/ko not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1278372A (zh) * | 1997-11-17 | 2000-12-27 | 艾利森电话股份有限公司 | 单片高频压控振荡器微调电路 |
US6362497B1 (en) * | 1999-01-08 | 2002-03-26 | Rohm Co., Ltd. | Semiconductor integrated circuit having ESD/EOS protection |
US6262591B1 (en) * | 2000-05-30 | 2001-07-17 | International Business Machines Corporation | SOI small signal terminated receiver |
CN1354516A (zh) * | 2000-11-16 | 2002-06-19 | 世界先进积体电路股份有限公司 | 静电放电防护元件及相关的电路 |
US6690066B1 (en) * | 2002-10-18 | 2004-02-10 | Texas Instruments Incorporated | Minimization and linearization of ESD parasitic capacitance in integrated circuits |
Also Published As
Publication number | Publication date |
---|---|
US7791852B2 (en) | 2010-09-07 |
JP2008010542A (ja) | 2008-01-17 |
KR20080002655A (ko) | 2008-01-04 |
TWI355730B (en) | 2012-01-01 |
CN101097917A (zh) | 2008-01-02 |
TW200812050A (en) | 2008-03-01 |
JP5053579B2 (ja) | 2012-10-17 |
US20080042686A1 (en) | 2008-02-21 |
KR100892328B1 (ko) | 2009-04-08 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090313 Address after: Tokyo, Japan Applicant after: Otsuka Hiroji Co-applicant after: Usami Tamotsu Co-applicant after: Qiu Shanfeng Co-applicant after: Ito Tsuneo Co-applicant after: Yuko Tamba Co-applicant after: Fujitsu Microelectronics Ltd. Address before: Tokyo, Japan Applicant before: Otsuka Hiroji Co-applicant before: Usami Tamotsu Co-applicant before: Qiu Shanfeng Co-applicant before: Ito Tsuneo Co-applicant before: Yuko Tamba Co-applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Otsuka Kanji Patentee after: Usami Tamotsu Patentee after: Qiu Shanfeng Patentee after: Ito Tsuneo Patentee after: Yuko Tamba Patentee after: FUJITSU MICROELECTRONICS Ltd. Patentee after: KYOCERA Corp. Patentee after: Toshiba Corp. Patentee after: Fuji film business innovation Co.,Ltd. Address before: Tokyo, Japan Patentee before: Otsuka Kanji Patentee before: Usami Tamotsu Patentee before: Qiu Shanfeng Patentee before: Ito Tsuneo Patentee before: Yuko Tamba Patentee before: FUJITSU MICROELECTRONICS Ltd. Patentee before: KYOCERA Corp. Patentee before: Toshiba Corp. Patentee before: Fuji Xerox Co.,Ltd. |