CN101083238A - 带有弹性导电凸块的微电子元件及其制造方法 - Google Patents
带有弹性导电凸块的微电子元件及其制造方法 Download PDFInfo
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Abstract
本发明提供了一种带有弹性导电凸块的微电子元件,包括半导体芯片和设置于该半导体芯片表面焊垫上的导电凸块,其特征在于所述导电凸块包括一导电层和一弹性导电层,所述导电层与所述半导体芯片表面焊垫电连接,所述弹性导电层与所述导电层冶金连接。同时提供了该微电子元件的制造方法,以及包含该微电子元件的封装结构和液晶显示装置。根据本发明的带有弹性导电凸块的微电子元件在封装过程中无需使用各向异性导电胶膜,所得封装结构与使用各向异性导电胶膜的封装结构相比,具有更低的连接电阻,同时避免短路发生。
Description
技术领域
本发明涉及微电子技术领域,具体提供了一种带有弹性导电凸块的微电子元件,包括该微电子元件的封装结构和液晶显示装置,以及该微电子元件的制造方法。
背景技术
在现有的微电子制造技术领域当中,以各向异性导电胶膜(AnisotropicConductive Film,ACF)为互联介质的倒装芯片(Flip Chip,FC)技术扮演着十分重要的角色。以目前常用的一种ACF为例,它由高分子聚合物和均匀分散在其中的导电颗粒组成,导电颗粒的直径大约为3~5微米,通常是一种表面包裹导电性金属材料的树脂颗粒。
在现有的倒装芯片技术当中,ACF被广泛使用的制造工艺主要包括:将驱动芯片直接封装在带电路的玻璃基板上的制造方法(COG,即chip on glass);将驱动芯片封装在柔性电路板(FPC)上的制造方法(COF,即chip on FPC);以及将驱动芯片封装于一般的印刷电路板上的制造方法(COB,即chip onboard)。其中,COG技术和COF技术是制造液晶显示装置的两个关键技术。
ACF在倒装芯片技术当中的应用描述如下。以带电路基板表示上述的制造方法中的玻璃基板、柔性电路板、印刷电路板或者其他电路板件,该带电路基板包含基板,通常其表面或内部形成有电路,以及形成在基板表面的连接端子(pad),该连接端子与基板上的电路电连接;另一方面,驱动芯片由内部集成有电路的半导体芯片和形成在该半导体芯片表面具有一定厚度的导电凸块(bump)组成。在封装过程中,将ACF置于驱动芯片和带电路基板之间,并使该驱动芯片上的导电凸块和基板上与之相对应的连接端子相互对准。然后对该驱动芯片和带电路基板进行加热及加压,ACF中的高分子聚合物受热后固化,将驱动芯片和带电路基板粘结固定在一起,与此同时,部分均匀分散在高分子聚合物当中的导电颗粒被捕捉在相对突出的导电凸块和连接端子之间,并在外力条件下受到挤压,这样,通过其表面包裹的导电性金属材料,被捕捉的导电颗粒便在导电凸块与连接端子之间建立了电连接。其中,导电颗粒的内核,树脂颗粒具有一定的弹性,因此在受到挤压时会发生一定的弹性变形,当导电凸块和连接端子之间的距离受到外部环境变化影响而发生变化时,这种弹性变形可以使导电凸块和连接端子之间通过导电颗粒始终保持可靠的电连接。由此可见,使用ACF进行倒装芯片互联,驱动芯片与带电路基板之间的机械固定和电气连接同时完成,而导电颗粒保证了互联的可靠性。
应用ACF进行倒装芯片互联时,由于驱动芯片和带电路基板之间的电路导通通过导电颗粒实现,因此导电凸块和连接端子之间的连接电阻主要取决于被捕捉于其之间的导电颗粒的数目。这样带来的一个问题是:导电凸块和连接端子之间的导电颗粒数目由于在封装过程中导电颗粒的四处逸散而变得太少,从而使其连接电阻增加,甚至造成断路。
另一方面,应用ACF进行的封装完成后,驱动芯片的导电凸块之间以及带电路基板的连接端子之间充满了固化后的聚合物,保持绝缘,但一些未被捕捉的导电颗粒也会散布于其间。这样带来的另一个问题是:太多的导电颗粒集中于相邻的导电凸块之间,形成侧向的电连接,即对相邻的导电凸块和相邻的连接端子造成短路。
随着微电子产品功能的日渐增加,封装密度逐步提高,芯片表面单位面积上的导电凸块的数量也成倍增长,这就造成导电凸块的表面积和相邻间距同时减小,上述两方面的问题将越来越容易发生。
发明内容
本发明的目的在于针对现有技术的不足,提供一种带有弹性导电凸块的微电子元件,该微电子元件在封装过程中无需使用各向异性导电胶膜,所得封装结构与使用各向异性导电胶膜的封装结构相比,具有更低的连接电阻,同时避免短路发生。同时提供该微电子元件的制造方法,以及包含该微电子元件的封装结构和液晶显示装置。
一方面,本发明提供了一种带有弹性导电凸块的微电子元件,包括半导体芯片和设置于该半导体芯片表面焊垫上的导电凸块,其特征在于所述导电凸块包括一导电层和一弹性导电层,所述导电层与所述半导体芯片表面焊垫电连接,所述弹性导电层与所述导电层冶金连接。
其中,所述导电层是金属层,由至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成。所述导电层的厚度不低于约5微米。
此外,所述弹性导电层由导电颗粒组成。所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。
另外,在上述带有弹性导电凸块的微电子元件中,所述半导体芯片的焊垫和所述导电凸块之间还可以包含一凸块底部金属层(under bump metallurgy,UBM)。
另一方面,本发明提供了一种带有弹性导电凸块的微电子元件,包括电路组件和设置于该电路组件上的导电凸快,其特征在于所述导电凸块包括一导电层和一弹性导电层,所述导电层与所述电路组件上的电路电连接,所述弹性导电层与所述导电层冶金连接。
其中,所述导电层是金属层,由至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成。所述导电层的厚度不低于约5微米。
此外,所述弹性导电层由导电颗粒组成。所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。
另一方面,本发明提供了一种包含上述任一项的带有弹性导电凸块的微电子元件的封装结构,其特征在于所述带有弹性导电凸块的微电子元件与带电路基板粘结,该微电子元件的弹性导电凸块与该带电路基板的连接端子相对放置并电连接。
其中,所述带有弹性导电凸块的微电子元件与带电路基板的粘结通过绝缘粘胶实现,该绝缘粘胶不包含任何导电性物质。
另一方面,本发明提供了一种包含上述任一项的带有弹性导电凸块的微电子元件的液晶显示装置,其特征在于所述带有弹性导电凸块的微电子元件与液晶显示面板组件粘结,该微电子元件的弹性导电凸块与该液晶显示面板组件的连接端子相对放置并电连接。
其中,所述带有弹性导电凸块的微电子元件与液晶显示面板组件的粘结通过绝缘粘胶实现,该绝缘粘胶不包含任何导电性物质。
另一方面,本发明提供了一种带有弹性导电凸块的微电子元件的制造方法,其特征在于包括以下步骤:(a)提供一表面具有焊垫的半导体芯片,沉积一导电层于该半导体芯片表面的焊垫上;(b)形成一弹性导电层于该导电层之上,该弹性导电层与该导电层冶金连接,得到所述带有弹性导电凸块的微电子元件。
其中,所述导电层的形成是通过电镀方法形成一金属层。所述导电层的形成分为下列两步:(1)沉积一第一种金属材料,该金属材料是至少一种选自Au、Cu、Ni、Al的金属或者这些金属的合金;(2)沉积一第二种金属材料,该金属材料是至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金,其中,该第二种金属材料的熔点低于该第一种金属材料的熔点。
此外,所述弹性导电层的形成是将导电颗粒冶金连接到该导电层。所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。所述弹性导电层与导电层的冶金连接是通过加热形成,或加热及加压形成。
另一方面,本发明提供了一种带有弹性导电凸块的微电子元件的制造方法,其特征在于包括以下步骤:(aa)提供一半导体芯片,该半导体芯片表面包括一焊垫,形成一凸块底部金属层于该半导体芯片表面的焊垫上;(bb)形成一非导电层于该凸块底部金属层及半导体芯片表面上,并图案化该非导电层,以形成至少一开口,该开口暴露该凸块底部金属层;(cc)在所述开口中形成一导电层;(dd)在所述导电层上形成一弹性导电层,该弹性导电层与该导电层冶金连接;(ee)去除所述非导电层,得到所述带有弹性导电凸块的微电子元件。
其中,所述导电层的形成是通过电镀方法形成一金属层。所述导电层的形成分为下列两步:(1)沉积一第一种金属材料,该金属材料是至少一种选自Au、Cu、Ni、Al的金属或者这些金属的合金;(2)沉积一第二种金属材料,该金属材料是至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金,其中,该第二种金属材料的熔点低于该第一种金属材料的熔点。
此外,所述弹性导电层的形成是将导电颗粒冶金连接到该导电层。所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。所述弹性导电层与导电层的冶金连接是通过加热形成,或加热及加压形成。
另一方面,本发明涉及的一种带有弹性导电凸块的微电子元件的制造方法也适用于电路组件,其特征在于包括以下步骤:(aaa)提供一电路组件,沉积一导电层于该电路组件表面上,并使该导电层与该电路组件上的电路电连接;(bbb)形成一弹性导电层于该导电层上,该弹性导电层和该导电层冶金连接,得到所述带有弹性导电凸块的微电子元件。
其中,所述导电层的沉积是与电路组件上的电路同时,用同样的方法和同样的材料形成。所述导电层的沉积是利用至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金形成所述的导电层。
此外,所述弹性导电层的形成是将导电颗粒冶金连接到该导电层。所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。所述弹性导电层与导电层的冶金连接是通过加热形成,或加热及加压形成。
本发明提供的带有弹性导电凸块的微电子元件在封装过程中无需使用各向异性导电胶膜,所得封装结构与使用各向异性导电胶膜的封装结构相比,一方面,由弹性导电层所提供的导电颗粒的数目比现有ACF封装过程中被捕捉的导电颗粒的数目更加稳定,避免了个别导电凸块和连接端子由于所捕捉导电颗粒过少而造成的连接电阻过高甚至断路。另一方面,相邻的导电凸块之间和连接端子之间没有散布的导电颗粒,短路的出现几率也会大大降低。随着目前微电子封装密度的逐步提高,上述两方面的优势将会更加明显。
附图说明
图1是根据本发明一实施例的带有弹性导电凸块的驱动芯片的结构示意图;
图2至图4是一种制造根据本发明一实施例的带有弹性导电凸块的驱动芯片的方法的示意图;
图5至图11是另一种制造根据本发明一实施例的带有弹性导电凸块的驱动芯片的方法的示意图;
图12是根据本发明一实施例的带有弹性导电凸块的驱动芯片的弹性导电层的另一种制造方法的剖面图;
图13是根据本发明一实施例的带有弹性导电凸块的驱动芯片在封装结构中应用的示意图;
图14是液晶显示装置组件的示意图,其中以COG和COF封装的形式安装了根据本发明实施例的带有弹性导电凸块的驱动芯片;
具体实施方式
以下将参照附图更充分地描述本发明,附图中示出了本发明的优选实施例。
所述实施例将参照作为微电子元件的液晶显示器驱动芯片(以下简称为驱动芯片)给出说明,其特性将通过示例的方式描述。
图1是根据本发明一实施例的带有弹性导电凸块的驱动芯片的结构示意图。
鉴于前面对于目前使用ACF进行倒装互联的封装结构所面临的问题的描述,本发明的一实施例提供了一种带有弹性导电凸块4的驱动芯片1,包括半导体芯片2和设置于该半导体芯片表面焊垫3上的弹性导电凸块4。其特征在于所述弹性导电凸块4包括一导电层5和一弹性导电层6,其中,所述导电层5与半导体芯片2表面焊垫3电连接,所述弹性导电层6与导电层5冶金连接。
在本发明的一实施例中,导电层5是金属层,外形与目前驱动芯片上的“直墙式”导电凸块类似,由至少一种选自Sn、Au、Cu、Pb、Bi、Ag、In、Al、Ni、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成,优选地,由Au和其表面的Au-Sn合金镀层组成。而弹性导电层6由导电颗粒7组成,导电颗粒7是金属颗粒或是表面涂覆金属的树脂颗粒,或者是两种颗粒的混合。通常情况下,金属颗粒和树脂颗粒都具有一定的弹性,但树脂颗粒的弹性变形能力优于金属颗粒,由于驱动芯片1将用于封装在液晶显示器面板上,基板为玻璃,质地较硬,不易变形,因此,需要弹性导电凸块4具有较大的弹性变形范围,满足封装结构的可靠性要求,优选地,导电颗粒7是表面涂覆金属的树脂颗粒。在本发明的一实施例中,导电颗粒7表面涂覆的金属材料由至少一种选自Sn、Au、Cu、Pb、Bi、Ag、In、Al、Ni、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成,从导电性能来看,优选Au,而表面为Au的导电颗粒7与导电层5表面的Au-Sn合金在其对应的组分的液相温度或以上时可以形成冶金连接。
由此可以看出,这种带有弹性导电凸块4的驱动芯片1具备了目前以ACF为互联介质的倒装芯片的一些工艺特点,它的封装过程与使用ACF的封装过程类似,但不再需要ACF,而可以利用类似于组成ACF的高分子聚合物通过加热固化,将需要封装起来的驱动芯片1和带电路基板相互粘结,同时,驱动芯片1的弹性导电凸块4和带电路基板的连接端子相对放置并相互挤压接触形成电连接,这样,驱动芯片1和带电路基板之间的机械固定和电气连接同时完成,而弹性导电层6中的导电颗粒7在挤压过程中发生弹性变形,替代原有ACF封装过程中被捕捉的导电颗粒的作用,保证了导电凸块4和连接端子之间电连接的可靠性。
这种带有弹性导电凸块4的驱动芯片1的封装结构与现有技术相比,一方面,由弹性导电层6所提供的导电颗粒7的数目比现有ACF封装过程中被捕捉的导电颗粒的数目更加稳定,同时又可以人为控制,因此,避免了个别导电凸块4和连接端子由于所捕捉导电颗粒过少而造成的连接电阻过高甚至断路。另一方面,由于相邻的导电凸块4之间和连接端子之间充满了固化的高分子聚合物,没有导电颗粒的散布,短路的出现几率也会大大降低。随着目前微电子封装密度的逐步提高,上述两方面的优势将会更加明显。
在本发明的一实施例中,上述导电层5的厚度不低于约5微米,这是为了避免在封装该驱动芯片1的过程中,空气中的灰尘颗粒造成良率的下降。这一点对液晶显示封装等方面的应用特别重要,因为如果导电凸块的高度太低,漂浮在空气中的直径为几微米的玻璃颗粒会对芯片造成机械损伤或导致互联的大电阻及不导通。
此外,参照图1所示的带有弹性导电凸块4的驱动芯片1,在本发明的一实施例中,上述驱动芯片1还包括一介于焊垫3和导电凸块4之间的一凸块底部金属层(未示出),该凸块底部金属层具有增强焊垫3和导电凸块4的连接强度,防止焊垫3和导电凸块4的相互扩散的作用,其具体实施方式将在后面的制造方法实施例中做详细描述。
图2至图4为剖面图,示出了一种制造根据本发明一实施例的带有弹性导电凸块的驱动芯片的方法。
图2示出一半导体芯片2,其内部形成有半导体集成电路(未示出),表面形成有用于制作导电凸块的焊垫3,该焊垫3与半导体芯片2中的集成电路电连接,用以输入和输出驱动和功能信号。
然后,在焊垫3表面沉积一导电层5,如图3所示,该导电层5的沉积是通过电镀方法形成一金属层,当然不限于电镀方法。在本发明的一实施例中,该沉积过程可分为两步,即先沉积一第一种金属材料5a,该第一种金属材料5a由至少一种选自Au、Cu、Ni、Al的金属或者这些金属的合金组成,优选的是Au;接下来沉积一第二种金属材料5b,该第二种金属材料5b由至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成,且熔点低于第一种金属材料5a,优选的是Sn或Au-Sn合金。在本发明的一实施例中,导电层5的厚度不低于约5微米,其中,第一种金属材料5a的优选厚度为5微米到20微米,第二种金属材料5b的优选厚度为0.5微米到2微米。
接下来,在导电层5表面形成弹性导电层6,如图4所示,由此得到根据本发明一实施例的带有弹性导电凸块4的驱动芯片1。该弹性导电层6的形成是将导电颗粒7冶金连接到该导电层5,在本发明一实施例中,导电颗粒7是金属颗粒或是表面涂覆金属的树脂颗粒,或者是两种颗粒的混合,为使弹性导电凸块4具有较大的弹性变形范围,满足封装结构的可靠性要求,导电颗粒7优选表面涂覆金属的树脂颗粒。导电颗粒7表面涂覆的金属材料根据本发明一实施例由至少一种选自Sn、Au、Cu、Pb、Bi、Ag、In、Al、Ni、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成。从导电性能来看,优选的是Au,与组成第二种金属材料5b的Sn或Au-Sn合金易形成共晶(eutectic)焊接。根据本发明的一实施例,导电层5与弹性导电层6的冶金连接是通过加热完成的,根据Au-Sn共晶相图,优选的加热温度为278℃到320℃。导电颗粒7的直径通常在1微米到20微米之间,优选的直径大小为3微米到5微米。当然,导电层5与弹性导电层6的冶金连接也可以通过加热及加压完成。
图5至图11为剖面图,示出了另一种制造根据本发明一实施例的带有弹性导电凸块的驱动芯片的方法。
图5示出一半导体芯片2,其内部形成有半导体集成电路(未示出),表面形成有用于制作导电凸块的焊垫3,该焊垫3与半导体芯片2中的集成电路电连接,用以输入和输出驱动和功能信号。焊垫3可由诸如金属的导电材料形成,优选地,焊垫3由Al或Cu形成。保护半导体芯片2并暴露焊垫3的钝化层8形成在半导体芯片2上,为实现焊垫3与外界的电接触,优选的是,钝化层8在焊垫3的上面部分上具有预定开口。钝化层8的开口可利用掩模通过光刻蚀刻工艺(photolithographic etching process)形成。
然后,如图6所示,在形成有钝化层8的半导体芯片2上形成凸块底部金属层9,并覆盖焊垫3暴露的部分。凸块底部金属层9可以加强Al或Cu焊垫3与导电凸块的连接强度。另外,凸块底部金属层9能在防止焊垫3与导电凸块互联之间的相互扩散中起作用。因此,优选的是,凸块底部金属层9与焊垫3和钝化层8具有良好附着,从而最小化作用到半导体芯片2上的应力并用作扩散阻挡层。此外,凸块底部金属层9与焊垫3之间的低电阻是优选的。因此,在本发明的一实施例中,凸块底部金属层9使用Ti、Cr、、W、Ni、Au、Cu、TiW、NiV、Pd、Cr/Cu、TiW/Cu、TiW/Au、NiV/Cu中至少一种形成,优选通过溅射或蒸镀完成。然而,本发明不限于此,凸块底部金属层9可通过各种制造工艺由各种材料制成。
然后,如图7所示,非导电层10形成在凸块底部金属层9上。任何具有下述功能的绝缘材料可用作非导电层10。即,在后续用于形成弹性导电凸块的电镀工艺(参见图9)中,通过阻挡电流流至凸块底部金属层9,该绝缘材料防止在除了凸块底部金属层9的将形成弹性导电凸块的部分区域之外的凸块底部金属层9的其余区域上被电镀。考虑到非导电层10与凸块底部金属层9之间的附着及构图非导电层10的方便性,优选的是,光致抗蚀剂被用作非导电层10。非导电层10可利用化学镀、溅射、蒸镀、旋涂、辊涂(roll-coating)、狭缝或狭槽模(slit-or slot-die)、或类似的方法形成。正或负光致抗蚀剂可用作非导电层10。在沉积光致抗蚀剂之后,光致抗蚀剂通过软烘烤工艺在热炉(hot plate)中固化,从而去除溶剂。利用曝光源和其上形成有图案的掩模,在固化了的光致抗蚀剂上选择性地进行曝光工艺。然后,通过硬烘烤工艺,该光致抗蚀剂在热炉中被热固化,从而区别光照射的区域与光未照射的区域。
参照图8,当在凸块底部金属层9上形成非导电层10后,非导电层10通过光刻蚀刻工艺构图。结果,形成非导电层图案10a,同时限定了形成弹性导电凸块(参照图10的附图标记4)的区域。如图8所示,优选的是,弹性导电凸块区域在焊垫3之上。
参照图9和10,弹性导电凸块4形成在非导电层图案10a暴露的凸块底部金属层9区域上。首先,如图9所示,导电层5的形成是通过电镀方法在凸块底部金属层9通过非导电层图案10a暴露的区域上形成一金属层,当然不限于电镀方法。这里,根据本发明一实施例,导电层5的形成过程又可分为两步,即先沉积一第一种金属材料5a,该第一种金属材料5a由至少一种选自Au、Cu、Ni、Al的金属或者这些金属的合金组成,优选的是Au;接下来沉积一第二种金属材料5b,该第二种金属材料5b由至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成,且熔点低于第一种金属材料5a,优选的是Sn或Au-Sn合金。在本发明的一实施例中,导电层5的厚度不低于约5微米,其中,第一种金属材料5a的优选厚度为5微米到20微米,第二种金属材料5b的优选厚度为0.5微米到2微米。
随后,如图10所示,在导电层5表面形成弹性导电层6。该弹性导电层6的形成是将导电颗粒7冶金连接到该导电层5,在本发明一实施例中,导电颗粒7是金属颗粒或是表面涂覆金属的树脂颗粒,或者是两种颗粒的混合,为使弹性导电凸块4具有较大的弹性变形范围,满足封装结构的可靠性要求,优选地,导电颗粒7是表面涂覆金属的树脂颗粒。导电颗粒7表面涂覆的金属材料根据本发明一实施例由至少一种选自Sn、Au、Cu、Pb、Bi、Ag、In、Al、Ni、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成。从导电性能来看,优选Au,与组成第二种金属材料5b的Sn或Au-Sn合金易形成共晶(eutectic)焊接。根据本发明的一实施例,导电层5与弹性导电层6的冶金连接是通过加热完成的,根据Au-Sn共晶相图,优选的加热温度为278℃到320℃。导电颗粒7的直径通常在1微米到20微米之间,优选的直径大小为3微米到5微米。当然,导电层5与弹性导电层6的冶金连接也可以通过加热及加压完成。
然后,如图11所示,非导电层图案10a通过灰化和剥离工艺去除。凸块底部金属层9根据弹性导电凸块4的形状被蚀刻,由此得到根据本发明一实施例的带有弹性导电凸块4的驱动芯片1。
其后,半导体芯片2被切割,从而驱动芯片1被分割成若干单独的驱动芯片。所获得的单独的驱动芯片利用诸如COG或COF等方法进行封装,无需再使用ACF作为互联介质。
图12是根据本发明一实施例的带有弹性导电凸块的驱动芯片的弹性导电层的另一种制造方法的剖面图。首先,将导电颗粒7均匀设置在一平整基板11的表面上,基板11需要较硬的质地和较高的耐热温度,优选玻璃基板或陶瓷基板。将焊垫3上已形成有导电层5的半导体芯片2倒扣设置在导电颗粒7上,在加热的同时对半导体芯片2和基板11加压,从而加速导电层5和导电颗粒7之间冶金连接的形成。其中,压力的范围应根据导电颗粒7的种类和个数来确定,受压的导电颗粒7较多,压力可以选择较大,反之,则要减小施加的压力。对于金属颗粒,所施加的压力应使大部分导电颗粒7不发生较大的塑性变形,而对于表面涂覆金属的树脂颗粒,所施加的压力应小于导电颗粒7在表面金属层不被破坏的条件下所能承受压力的上限。本实施例中的半导体芯片2可以是未切割的晶圆,也可以是切割后的单个芯片,优选的是单个芯片。
尽管在上述实施例中给出了对液晶显示器驱动芯片例子的描述,但是显然,根据本发明实施例的弹性导电凸块的结构可应用于各种芯片。例如,根据本发明的弹性导电凸块的结构可以有益的应用于与平板显示器、RFID、电子标签等产品的制造相关的芯片上。通常,在目前的微电子领域当中,需要通过ACF或者非导电胶膜(Non-Conductive Film,NCF)进行互联的各种芯片,通过根据本发明实施例的弹性导电凸块的结构均可得到互联性能的改善。
根据本发明的带有弹性导电凸块的微电子元件除在芯片领域的应用之外,还可以应用于多种其他电路组件当中,如印刷电路板(PCB)、柔性电路板(FPC)、表面贴装元件(SMT Components)、微机电系统元件(MEMS Components)等。设置于这些电路组件上的弹性导电凸块包括一导电层和一弹性导电层,其中导电层与该电路组件上的电路电连接,弹性导电层与导电层冶金连接。在本发明的一实施例中,所述导电层是金属层,由至少一种选自Sn、Au、Cu、Pb、Bi、Ag、In、Al、Ni、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成,优选Cu及Cu的表面镀层,其中,所述表面镀层由Au、Ni/Au、Sn、Sn/Au或Sn/Ag/Cu中的至少一种组成。在本发明的一实施例中,所述导电层是电路组件上用于与外界互连的焊盘的一部分,或在焊盘表面施加一镀层,与该电路组件上的电路的材料和厚度基本一致。
上述形成在电路组件上的弹性导电凸块的制造过程与前面描述的驱动芯片的弹性导电凸块的制造过程示例相似,但导电层的形成过程和方法会根据电路组件的不同而变化,以应用在液晶显示装置当中的柔性电路板为例,在现有技术领域里,柔性电路板需要通过ACF与液晶显示面板组件相连。根据本发明一实施例的带有弹性导电凸块的柔性电路板可以直接粘结在液晶显示面板组件上。该柔性电路板上弹性导电凸块的导电层的形成根据本发明一实施例与柔性电路板表面的电路同时,用同样的方法和同样的材料形成,优选通过电镀或压延完成。
图1至12描述的根据本发明各种实施例的带有弹性导电凸块的驱动芯片可以根据各种安装方法安装在各种结构上。例如,通过COG的方法将驱动芯片直接封装在带电路的玻璃基板上;通过COF的方法将驱动芯片封装在柔性电路板上;以及通过COB的方法将驱动芯片封装于一般的印刷电路板上。在这些方法中,驱动芯片与各种基板之间只需要普通的绝缘粘胶作为互联介质,起到支撑,粘结和保护的作用。
图13是根据本发明一实施例的带有弹性导电凸块的驱动芯片在封装结构中应用的示意图。驱动芯片1与带电路基板12通过绝缘粘胶14粘结起来,其中驱动芯片1上的弹性导电凸块4与带电路基板12上的连接端子13相对放置并电连接。在封装过程中,需要将绝缘粘胶14设置在驱动芯片1和带电路基板12之间,并使弹性导电凸块4和与之相对应的连接端子13相对。在本发明一实施例中,绝缘粘胶14具有热固性,封装过程通过对驱动芯片1和带电路基板12加热及加压完成。在本发明一实施例中,绝缘粘胶14具有光固性,此时,带电路基板12优选透明基板。封装过程通过对驱动芯片1和带电路基板12加压,以及透过带电路基板12进行光照完成。在本发明一实施例中,绝缘粘胶14具有压固性,封装过程通过对驱动芯片1和带电路基板12加压即可完成。在本发明一实施例中,绝缘粘胶14可以采用带状粘胶,优选非导电胶膜(Non-ConductiveFilm,NCF),封装过程中,首先将NCF贴敷在带电路基板12上,然后对驱动芯片1和带电路基板12进行加热及加压。在本发明一实施例中,绝缘粘胶14可以采用膏状粘胶,优选非导电胶(膏)(Non-Conductive Paste,NCP),封装过程中,首先将NCP喷涂在带电路基板12上,然后对驱动芯片1和带电路基板12进行加热及加压。虽然本实施例中描述了根据本发明的带有弹性导电凸块的驱动芯片在封装结构中应用,但本发明不限于此。显然,根据本发明的带有弹性导电凸块的各种电路组件的封装同样可以使用上述的封装结构。
图14为液晶显示装置组件的示意图,其中以COG和COF封装的形式安装了根据本发明实施例的带有弹性导电凸块的驱动芯片。本发明的液晶显示面板15包括下基板16和上基板17,下基板16的伸出部分有铟锡氧化物(ITO)形成的透明电极18,用于连接外部驱动电路和显示面板各像素的连接电路。其中,根据本发明一实施例的带有弹性导电凸块4的驱动芯片1利用COG方法通过绝缘粘胶14直接封装在液晶显示面板15的下基板16上,弹性导电凸块4与ITO透明电极18相对放置并电连接在一起。另外,下基板16上还安装有柔性电路板元件19,其包括柔性膜20和形成在柔性膜20上的连接端子21。根据本发明一实施例的带有弹性导电凸块4的驱动芯片1利用COF方法通过绝缘粘胶14封装在柔性电路板元件19上,弹性导电凸块4与连接端子21相对放置并电连接在一起。在本发明一实施例中,绝缘粘胶14具有热固性,优选固化温度低于目前ACF中高分子聚合物的固化温度的绝缘粘胶,这样有助于提高生产效率,同时还能降低液晶显示装置在制造过程中由于不同材料的热膨胀系数不同而造成的翘曲,提高可靠性。在本发明一实施例中,绝缘粘胶14具有光固性,由于下基板16和柔性电路板元件19本身透明,透过光照使绝缘粘胶14固化,可以避免由于加热而造成的液晶显示装置中的翘曲,在本发明一实施例中,绝缘粘胶14具有压固性,封装过程通过对驱动芯片1和下基板16,或驱动芯片1和柔性电路板元件19加压即可完成。在本发明一实施例中,绝缘粘胶14可以采用带状粘胶,优选NCF,封装过程中,首先将NCF贴敷在下基板16或柔性电路板元件19上,然后对驱动芯片1和下基板16,或驱动芯片1和柔性电路板元件19进行加热及加压。在本发明一实施例中,绝缘粘胶14可以采用膏状粘胶,优选NCP,封装过程中,首先将NCP喷涂在下基板16或柔性电路板元件19上,然后对驱动芯片1和下基板16,或驱动芯片1和柔性电路板元件19进行加热及加压。虽然本实施例中描述了其中以COG和COF封装的形式安装驱动芯片1的液晶显示面板15,但本发明不限于此。显然,如图14所示,柔性电路板元件19与液晶显示面板15的连接,可以替换为根据本发明的带有弹性导电凸块的柔性电路板通过上述的方法与液晶显示面板15的连接。
总之,本领域技术人员理解,在不偏离本发明的原理的情况下,可以对优选实施例进行多种变化和修改,因此,所公开的本发明的优选实施例只在一般的和描述的意义上得以使用,而不用于限制的目的。
如上所述,根据本发明的带有弹性导电凸块的微电子元件在封装过程中无需使用各向异性导电胶膜,所得封装结构与使用各向异性导电胶膜的封装结构相比,具有更低的连接电阻,同时避免短路发生。
Claims (19)
1、一种带有弹性导电凸块的微电子元件,包括半导体芯片和设置于该半导体芯片表面焊垫上的导电凸块,其特征在于所述导电凸块包括一导电层和一弹性导电层,所述导电层与所述半导体芯片表面焊垫电连接,所述弹性导电层与所述导电层冶金连接。
2、一种带有弹性导电凸块的微电子元件,包括电路组件和设置于该电路组件上的导电凸快,其特征在于所述导电凸块包括一导电层和一弹性导电层,所述导电层与所述电路组件上的电路电连接,所述弹性导电层与所述导电层冶金连接。
3、根据权利要求1或2的带有弹性导电凸块的微电子元件,其特征在于所述导电层是金属层,由至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金组成。
4、根据权利要求1或2的带有弹性导电凸块的微电子元件,其特征在于所述导电层的厚度不低于5微米。
5、根据权利要求1或2的带有弹性导电凸块的微电子元件,其特征在于所述弹性导电层由导电颗粒组成。
6、根据权利要求5的带有弹性导电凸块的微电子元件,其特征在于所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。
7、根据权利要求1的带有弹性导电凸块的微电子元件,其特征在于所述半导体芯片的焊垫和所述导电凸块之间有凸块底部金属层。
8、一种包含权利要求1至7中任一项的带有弹性导电凸块的微电子元件的封装结构,其特征在于所述带有弹性导电凸块的微电子元件与带电路基板粘结,微电子元件的弹性导电凸块与带电路基板的连接端子相对放置并电连接。
9、一种包含权利要求1至7中任一项的带有弹性导电凸块的微电子元件的液晶显示装置,其特征在于所述带有弹性导电凸块的微电子元件与液晶显示面板组件粘结,微电子元件的弹性导电凸块与液晶显示面板组件的连接端子相对放置并电连接。
10、一种带有弹性导电凸块的微电子元件的制造方法,其特征在于包括以下步骤:
(a)提供一表面具有焊垫的半导体芯片,沉积一导电层于该半导体芯片表面的焊垫上;
(b)形成一弹性导电层于该导电层之上,该弹性导电层与该导电层冶金连接,得到所述带有弹性导电凸块的微电子元件。
11、一种带有弹性导电凸块的微电子元件的制造方法,其特征在于包括以下步骤:
(aa)提供一半导体芯片,该半导体芯片表面包括一焊垫,形成一凸块底部金属层于该半导体芯片表面的焊垫上;
(bb)形成一非导电层于该凸块底部金属层及半导体芯片表面上,并图案化该非导电层,以形成至少一开口,该开口暴露该凸块底部金属层;
(cc)在所述开口中形成一导电层;
(dd)在所述导电层上形成一弹性导电层,该弹性导电层与该导电层冶金连接;
(ee)去除所述非导电层,得到所述带有弹性导电凸块的微电子元件。
12、一种带有弹性导电凸块的微电子元件的制造方法,其特征在于包括以下步骤:
(aaa)提供一电路组件,沉积一导电层于该电路组件表面上,并使该导电层与该电路组件上的电路电连接;
(bbb)形成一弹性导电层于该导电层上,该弹性导电层和该导电层冶金连接,得到所述带有弹性导电凸块的微电子元件。
13、根据权利要求10或11的制造方法,其特征在于所述导电层的形成是通过电镀方法形成一金属层。
14、根据权利要求10或11的制造方法,其特征在于所述导电层的形成分为下列两步:
(1)沉积一第一种金属材料,该金属材料是至少一种选自Au、Cu、Ni、Al的金属或者这些金属的合金;
(2)沉积一第二种金属材料,该金属材料是至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金,其中,该第二种金属材料的熔点低于该第一种金属材料的熔点。
15、根据权利要求12的制造方法,其特征在于所述导电层的沉积是与电路组件上的电路同时,用同样的方法和同样的材料形成。
16、根据权利要求12的制造方法,其特征在于所述导电层的沉积是利用至少一种选自Au、Cu、Al、Ni、Sn、Pb、Bi、Ag、In、Sb、Cd、Zn、Ga的金属或者这些金属的合金形成所述的导电层。
17、根据权利要求10、11或12的制造方法,其特征在于所述弹性导电层的形成是将导电颗粒冶金连接到该导电层。
18、根据权利要求10、11或12的制造方法,其特征在于所述弹性导电层与导电层的冶金连接是通过加热形成,或加热及加压形成。
19、根据权利要求17的制造方法,其特征在于所述导电颗粒是金属颗粒或是表面涂覆金属的树脂颗粒。
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KR101309319B1 (ko) | 2006-11-22 | 2013-09-13 | 삼성디스플레이 주식회사 | 액정표시장치 구동회로 및 그의 제조방법과 액정표시장치구동회로가 실장 된 액정표시장치 |
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KR100574215B1 (ko) * | 1997-04-17 | 2006-04-27 | 세키스이가가쿠 고교가부시키가이샤 | 도전성 미립자 |
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CN100511661C (zh) * | 2007-02-01 | 2009-07-08 | 上海交通大学 | 带有弹性导电凸块的微电子元件及其制造方法和应用 |
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