CN101061257B - 能够在低温度下使液体原料气化的液体原料的气化方法与采用了该方法的气化器 - Google Patents

能够在低温度下使液体原料气化的液体原料的气化方法与采用了该方法的气化器 Download PDF

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CN101061257B
CN101061257B CN2006800012464A CN200680001246A CN101061257B CN 101061257 B CN101061257 B CN 101061257B CN 2006800012464 A CN2006800012464 A CN 2006800012464A CN 200680001246 A CN200680001246 A CN 200680001246A CN 101061257 B CN101061257 B CN 101061257B
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aforementioned
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vaporizer
liquid
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CN101061257A (zh
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小野弘文
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Lintec Corp
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Lintec Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S261/00—Gas and liquid contact apparatus
    • Y10S261/65—Vaporizers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0391—Affecting flow by the addition of material or energy

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
CN2006800012464A 2005-09-09 2006-09-06 能够在低温度下使液体原料气化的液体原料的气化方法与采用了该方法的气化器 Active CN101061257B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2005262911 2005-09-09
JP262911/2005 2005-09-09
JP300521/2005 2005-10-14
JP2005300521A JP4601535B2 (ja) 2005-09-09 2005-10-14 低温度で液体原料を気化させることのできる気化器
PCT/JP2006/317625 WO2007029726A1 (ja) 2005-09-09 2006-09-06 低温度で液体原料を気化させることのできる液体原料の気化方法および該方法を用いた気化器

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CN101061257A CN101061257A (zh) 2007-10-24
CN101061257B true CN101061257B (zh) 2010-06-23

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US (2) US7975993B2 (cg-RX-API-DMAC10.html)
EP (1) EP1923485B1 (cg-RX-API-DMAC10.html)
JP (1) JP4601535B2 (cg-RX-API-DMAC10.html)
KR (1) KR101343784B1 (cg-RX-API-DMAC10.html)
CN (1) CN101061257B (cg-RX-API-DMAC10.html)
TW (1) TW200714740A (cg-RX-API-DMAC10.html)
WO (1) WO2007029726A1 (cg-RX-API-DMAC10.html)

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JP4601535B2 (ja) * 2005-09-09 2010-12-22 株式会社リンテック 低温度で液体原料を気化させることのできる気化器
US20090047417A1 (en) * 2007-03-30 2009-02-19 Barnes Michael S Method and system for vapor phase application of lubricant in disk media manufacturing process
CN101903561B (zh) * 2007-12-19 2012-08-22 株式会社堀场Stec 液体材料气化装置
JP2009188266A (ja) * 2008-02-07 2009-08-20 Tokyo Electron Ltd 液体原料気化器及びそれを用いた成膜装置
JP5265583B2 (ja) * 2008-02-14 2013-08-14 株式会社アルバック 蒸着装置
US20090293807A1 (en) * 2008-05-30 2009-12-03 Msp Corporation Apparatus for filtration and gas-vapor mixing in thin film deposition
US8132793B2 (en) * 2008-09-12 2012-03-13 Msp Corporation Method and apparatus for liquid precursor atomization
JP2010087169A (ja) * 2008-09-30 2010-04-15 Tokyo Electron Ltd 気化器およびそれを用いた成膜装置
CN102239275B (zh) * 2009-02-24 2013-10-30 株式会社爱发科 有机化合物蒸汽发生装置及有机薄膜制造装置
US8337627B2 (en) * 2009-10-01 2012-12-25 International Business Machines Corporation Cleaning exhaust screens in a manufacturing process
DE102009049839B4 (de) * 2009-10-16 2012-12-06 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen sowie Verfahren zu dessen Betreiben
CN102039096B (zh) * 2009-10-16 2012-10-24 北京均方谱元科技有限公司 常压室温可挥发性液体动态配气系统及其配气方法
DE112011100462T5 (de) * 2010-02-05 2012-11-22 Msp Corp. Feintröpfchen-Zerstäuber für die Flüssigprekursor-Verdampfung
KR101287113B1 (ko) * 2010-06-30 2013-07-17 삼성디스플레이 주식회사 증착 장치용 캐니스터 및 이를 이용한 증착 장치
KR101339600B1 (ko) * 2011-08-18 2014-01-29 포아텍 주식회사 기화기
TWI570253B (zh) * 2011-10-21 2017-02-11 歐瑞康先進科技股份有限公司 直接液體沉積
KR101388225B1 (ko) * 2011-12-02 2014-04-23 주식회사 케이씨텍 증착장치의 기화기
US9598766B2 (en) * 2012-05-27 2017-03-21 Air Products And Chemicals, Inc. Vessel with filter
CN104520975B (zh) * 2012-07-30 2018-07-31 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
JP6078335B2 (ja) * 2012-12-27 2017-02-08 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、気化システム、気化器およびプログラム
US9523151B2 (en) * 2014-02-21 2016-12-20 Tokyo Electron Limited Vaporizer unit with open cell core and method of operating
KR101413302B1 (ko) * 2014-03-18 2014-06-27 주식회사 디에스케이 선박용 일체형 유수분리기
US10287679B2 (en) 2015-05-11 2019-05-14 Msp Corporation Apparatus and method for vapor generation and film deposition
US9797593B2 (en) * 2015-05-11 2017-10-24 Msp Corporation Apparatus and method for vapor generation and film deposition
KR101753758B1 (ko) 2015-05-11 2017-07-06 주성엔지니어링(주) 기화기 및 이를 포함하는 기판 처리장치
JP6450469B2 (ja) * 2015-11-10 2019-01-09 東京エレクトロン株式会社 気化器、成膜装置及び温度制御方法
JP6637520B2 (ja) * 2015-11-30 2020-01-29 株式会社アルバック 蒸気放出装置及び成膜装置
CN108369911B (zh) * 2015-12-18 2022-06-17 株式会社国际电气 贮留装置、气化器、基板处理装置以及半导体装置的制造方法
JP6322746B1 (ja) 2017-03-30 2018-05-09 オリジン電気株式会社 ワーク処理装置及び処理済ワークの製造方法
WO2019155851A1 (ja) * 2018-02-12 2019-08-15 株式会社ノリタケカンパニーリミテド 液体霧化装置
JP6694093B2 (ja) * 2018-07-24 2020-05-13 株式会社リンテック 気化器
WO2020021796A1 (ja) 2018-07-24 2020-01-30 株式会社リンテック 気化器
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CN115613005A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 雾化装置与薄膜沉积系统

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US20090065066A1 (en) 2009-03-12
JP2007100207A (ja) 2007-04-19
KR101343784B1 (ko) 2013-12-20
TW200714740A (en) 2007-04-16
JP4601535B2 (ja) 2010-12-22
EP1923485A1 (en) 2008-05-21
EP1923485A4 (en) 2009-07-15
US20110197816A1 (en) 2011-08-18
WO2007029726A1 (ja) 2007-03-15
CN101061257A (zh) 2007-10-24
KR20080042032A (ko) 2008-05-14
EP1923485B1 (en) 2015-10-28
TWI406965B (cg-RX-API-DMAC10.html) 2013-09-01
US7975993B2 (en) 2011-07-12
US8162298B2 (en) 2012-04-24

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