CN101051641B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN101051641B
CN101051641B CN2007100922678A CN200710092267A CN101051641B CN 101051641 B CN101051641 B CN 101051641B CN 2007100922678 A CN2007100922678 A CN 2007100922678A CN 200710092267 A CN200710092267 A CN 200710092267A CN 101051641 B CN101051641 B CN 101051641B
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China
Prior art keywords
insulating film
gate electrode
semiconductor substrate
semiconductor region
sidewall
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CN2007100922678A
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Chinese (zh)
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CN101051641A (zh
Inventor
鸟羽功一
石井泰之
川岛祥之
町田悟
中川宗克
齐藤健太郎
松井俊一
桥本孝司
奥山幸祐
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Renesas Electronics Corp
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Renesas Electronics Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CN2007100922678A 2006-04-04 2007-04-03 半导体器件及其制造方法 Active CN101051641B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP103463/2006 2006-04-04
JP2006103463A JP5086558B2 (ja) 2006-04-04 2006-04-04 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN101051641A CN101051641A (zh) 2007-10-10
CN101051641B true CN101051641B (zh) 2012-05-23

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CN2007100922678A Active CN101051641B (zh) 2006-04-04 2007-04-03 半导体器件及其制造方法

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US (2) US7745288B2 (enExample)
JP (1) JP5086558B2 (enExample)
CN (1) CN101051641B (enExample)

Families Citing this family (16)

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TWI333691B (en) * 2006-05-23 2010-11-21 Ememory Technology Inc Nonvolatile memory with twin gate and method of operating the same
JP2010092929A (ja) 2008-10-03 2010-04-22 Toshiba Corp 不揮発性半導体記憶装置
JP5448082B2 (ja) * 2010-03-05 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置
US20120241710A1 (en) 2011-03-21 2012-09-27 Nanyang Technological University Fabrication of RRAM Cell Using CMOS Compatible Processes
US8698118B2 (en) * 2012-02-29 2014-04-15 Globalfoundries Singapore Pte Ltd Compact RRAM device and methods of making same
US9276041B2 (en) 2012-03-19 2016-03-01 Globalfoundries Singapore Pte Ltd Three dimensional RRAM device, and methods of making same
US8993407B2 (en) 2012-11-21 2015-03-31 Globalfoundries Singapore Pte. Ltd. Compact localized RRAM cell structure realized by spacer technology
US9466496B2 (en) * 2013-10-11 2016-10-11 Cypress Semiconductor Corporation Spacer formation with straight sidewall
US9660106B2 (en) * 2014-08-18 2017-05-23 United Microelectronics Corp. Flash memory and method of manufacturing the same
US10163979B2 (en) 2014-09-11 2018-12-25 Globalfoundries Singapore Pte. Ltd. Selector-resistive random access memory cell
JP6573792B2 (ja) 2015-07-10 2019-09-11 ルネサスエレクトロニクス株式会社 半導体装置
JP6556556B2 (ja) 2015-08-20 2019-08-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6629142B2 (ja) * 2016-06-03 2020-01-15 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2017220510A (ja) 2016-06-06 2017-12-14 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP1748853S (ja) * 2022-10-07 2023-07-19 分離膜装置の性能予測ソフトウェア作成用画像
CN117082865A (zh) * 2023-08-23 2023-11-17 华虹半导体(无锡)有限公司 一种分栅浮栅闪存器件及其制作方法

Citations (1)

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US6376320B1 (en) * 2000-11-15 2002-04-23 Advanced Micro Devices, Inc. Method for forming field effect transistor with silicides of different thickness and of different materials for the source/drain and the gate

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US5064776A (en) * 1990-10-03 1991-11-12 Micron Technology, Inc. Method of forming buried contact between polysilicon gate and diffusion area
US5672525A (en) * 1996-05-23 1997-09-30 Chartered Semiconductor Manufacturing Pte Ltd. Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity
US6541343B1 (en) * 1999-12-30 2003-04-01 Intel Corporation Methods of making field effect transistor structure with partially isolated source/drain junctions
US6287925B1 (en) * 2000-02-24 2001-09-11 Advanced Micro Devices, Inc. Formation of highly conductive junctions by rapid thermal anneal and laser thermal process
US6593198B2 (en) * 2000-09-18 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2002198523A (ja) * 2000-12-26 2002-07-12 Hitachi Ltd 半導体集積回路装置およびその製造方法
US20020123180A1 (en) * 2001-03-01 2002-09-05 Peter Rabkin Transistor and memory cell with ultra-short gate feature and method of fabricating the same
US6864547B2 (en) * 2001-06-15 2005-03-08 Agere Systems Inc. Semiconductor device having a ghost source/drain region and a method of manufacture therefor
JP4647175B2 (ja) * 2002-04-18 2011-03-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP2004079893A (ja) 2002-08-21 2004-03-11 Denso Corp 半導体装置及びその製造方法
JP2004235255A (ja) * 2003-01-28 2004-08-19 Nec Electronics Corp 半導体装置の製造方法及び半導体装置
JP2004266203A (ja) 2003-03-04 2004-09-24 Renesas Technology Corp 半導体装置及びその製造方法
JP4746835B2 (ja) * 2003-10-20 2011-08-10 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP4521597B2 (ja) * 2004-02-10 2010-08-11 ルネサスエレクトロニクス株式会社 半導体記憶装置およびその製造方法
JP4546117B2 (ja) * 2004-03-10 2010-09-15 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2006041354A (ja) * 2004-07-29 2006-02-09 Renesas Technology Corp 半導体装置及びその製造方法
JP2006049576A (ja) * 2004-08-04 2006-02-16 Denso Corp 半導体装置およびその製造方法
JP4773073B2 (ja) * 2004-08-11 2011-09-14 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP4546795B2 (ja) * 2004-09-15 2010-09-15 ルネサスエレクトロニクス株式会社 半導体装置
JP2006278854A (ja) * 2005-03-30 2006-10-12 Seiko Epson Corp 半導体装置の製造方法
JP4928825B2 (ja) * 2006-05-10 2012-05-09 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US6376320B1 (en) * 2000-11-15 2002-04-23 Advanced Micro Devices, Inc. Method for forming field effect transistor with silicides of different thickness and of different materials for the source/drain and the gate

Non-Patent Citations (3)

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Title
JP特开2002-198523A 2002.07.12
JP特开2004-266203A 2004.09.24
JP特开2004-79893A 2004.03.11

Also Published As

Publication number Publication date
US20100237404A1 (en) 2010-09-23
US20070228446A1 (en) 2007-10-04
JP2007281091A (ja) 2007-10-25
CN101051641A (zh) 2007-10-10
JP5086558B2 (ja) 2012-11-28
US8530958B2 (en) 2013-09-10
US7745288B2 (en) 2010-06-29

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