CN100594602C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

Info

Publication number
CN100594602C
CN100594602C CN200510118643A CN200510118643A CN100594602C CN 100594602 C CN100594602 C CN 100594602C CN 200510118643 A CN200510118643 A CN 200510118643A CN 200510118643 A CN200510118643 A CN 200510118643A CN 100594602 C CN100594602 C CN 100594602C
Authority
CN
China
Prior art keywords
main surface
recess
semiconductor device
metal block
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN200510118643A
Other languages
English (en)
Chinese (zh)
Other versions
CN1790692A (zh
Inventor
筱原利彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1790692A publication Critical patent/CN1790692A/zh
Application granted granted Critical
Publication of CN100594602C publication Critical patent/CN100594602C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/481—Leadframes for devices being provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07636—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H10W72/07631—Techniques
    • H10W72/07637—Techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/865—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/871—Bond wires and strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/761—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors
    • H10W90/764—Package configurations characterised by the relative positions of pads or connectors relative to package parts of strap connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CN200510118643A 2004-11-01 2005-11-01 半导体装置及其制造方法 Expired - Lifetime CN100594602C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004317929 2004-11-01
JP2004317929A JP4338620B2 (ja) 2004-11-01 2004-11-01 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
CN1790692A CN1790692A (zh) 2006-06-21
CN100594602C true CN100594602C (zh) 2010-03-17

Family

ID=36260860

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200510118643A Expired - Lifetime CN100594602C (zh) 2004-11-01 2005-11-01 半导体装置及其制造方法

Country Status (4)

Country Link
US (1) US7642640B2 (enExample)
JP (1) JP4338620B2 (enExample)
CN (1) CN100594602C (enExample)
DE (1) DE102005050330B4 (enExample)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8198709B2 (en) * 2006-10-18 2012-06-12 Vishay General Semiconductor Llc Potted integrated circuit device with aluminum case
JP5050633B2 (ja) * 2007-05-02 2012-10-17 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板及びパワーモジュール
US7800208B2 (en) * 2007-10-26 2010-09-21 Infineon Technologies Ag Device with a plurality of semiconductor chips
JP4506848B2 (ja) * 2008-02-08 2010-07-21 株式会社デンソー 半導体モジュール
DE102008031231B4 (de) * 2008-07-02 2012-12-27 Siemens Aktiengesellschaft Herstellungsverfahren für planare elektronsche Leistungselektronik-Module für Hochtemperatur-Anwendungen und entsprechendes Leistungselektronik-Modul
JP5398269B2 (ja) * 2009-01-07 2014-01-29 三菱電機株式会社 パワーモジュール及びパワー半導体装置
JP5268660B2 (ja) * 2009-01-08 2013-08-21 三菱電機株式会社 パワーモジュール及びパワー半導体装置
JP5488645B2 (ja) * 2009-06-30 2014-05-14 株式会社デンソー 半導体装置およびその製造方法
JP5018909B2 (ja) * 2009-06-30 2012-09-05 株式会社デンソー 半導体装置
JP5306171B2 (ja) * 2009-12-25 2013-10-02 三菱電機株式会社 半導体装置
JP2011216564A (ja) * 2010-03-31 2011-10-27 Mitsubishi Electric Corp パワーモジュール及びその製造方法
JP2012069764A (ja) * 2010-09-24 2012-04-05 On Semiconductor Trading Ltd 回路装置およびその製造方法
US20120248594A1 (en) * 2011-03-28 2012-10-04 Ho Il Lee Junction box and manufacturing method thereof
US8804340B2 (en) * 2011-06-08 2014-08-12 International Rectifier Corporation Power semiconductor package with double-sided cooling
ITMI20111218A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza ad elevata velocita? di commutazione
US8723311B2 (en) 2011-06-30 2014-05-13 Stmicroelectronics S.R.L. Half-bridge electronic device with common heat sink on mounting surface
ITMI20111217A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema contenitore/dissipatore per componente elettronico
ITMI20111208A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore stabilizzato
ITMI20111214A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo di potenza a spessore ridotto
ITMI20111213A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico a semi-ponte con dissipatore di calore ausiliario comune
ITMI20111216A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Dispositivo elettronico di potenza ad elevata dissipazione di calore e stabilita?
ITMI20111219A1 (it) 2011-06-30 2012-12-31 St Microelectronics Srl Sistema con dissipatore di calore condiviso
JP2013021254A (ja) * 2011-07-14 2013-01-31 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
TWM422161U (en) * 2011-08-18 2012-02-01 Ks Terminals Inc Improved diode structure
JP5542765B2 (ja) * 2011-09-26 2014-07-09 日立オートモティブシステムズ株式会社 パワーモジュール
US10636735B2 (en) * 2011-10-14 2020-04-28 Cyntec Co., Ltd. Package structure and the method to fabricate thereof
JP5840933B2 (ja) * 2011-11-15 2016-01-06 トヨタ自動車株式会社 半導体装置
JP5484429B2 (ja) * 2011-11-18 2014-05-07 三菱電機株式会社 電力変換装置
CN103930986A (zh) * 2011-12-09 2014-07-16 富士电机株式会社 功率转换装置
CN104011853B (zh) * 2011-12-26 2016-11-09 三菱电机株式会社 电力用半导体装置及其制造方法
JP5661052B2 (ja) * 2012-01-18 2015-01-28 三菱電機株式会社 パワー半導体モジュールおよびその製造方法
JP5175989B1 (ja) * 2012-03-09 2013-04-03 福島双羽電機株式会社 平板形状の半導体装置
JP2014007209A (ja) * 2012-06-22 2014-01-16 Hitachi Automotive Systems Ltd 半導体装置及びその製造方法
JP5472498B2 (ja) * 2013-02-19 2014-04-16 三菱電機株式会社 パワーモジュールの製造方法
DE102013219245A1 (de) * 2013-09-25 2015-03-26 Siemens Aktiengesellschaft Leistungsmodul mit Einfassung
JP6218626B2 (ja) * 2014-01-31 2017-10-25 株式会社鶴見製作所 自動運転型片水路水中ポンプ
WO2015129418A1 (ja) * 2014-02-25 2015-09-03 日立オートモティブシステムズ株式会社 防水型電子機器及びその製造方法
CN105765716B (zh) * 2014-05-15 2018-06-22 富士电机株式会社 功率半导体模块和复合模块
JP6345265B2 (ja) * 2014-10-29 2018-06-20 日立オートモティブシステムズ株式会社 電子機器及び電子機器の製造方法
CN105161467B (zh) * 2015-08-14 2019-06-28 株洲南车时代电气股份有限公司 一种用于电动汽车的功率模块
JP6984171B2 (ja) * 2017-05-19 2021-12-17 株式会社アイシン 半導体装置
JP2019212809A (ja) * 2018-06-06 2019-12-12 トヨタ自動車株式会社 半導体装置
JP6971931B2 (ja) * 2018-07-27 2021-11-24 日立Astemo株式会社 パワー半導体装置
TWI727861B (zh) * 2020-07-23 2021-05-11 朋程科技股份有限公司 晶片封裝結構及其製造方法
US11404359B2 (en) * 2020-10-19 2022-08-02 Infineon Technologies Ag Leadframe package with isolation layer
JP7026861B1 (ja) * 2021-05-11 2022-02-28 三菱電機株式会社 半導体装置及び電力変換装置
JP2022179872A (ja) * 2021-05-24 2022-12-06 富士電機株式会社 半導体装置
JP2024077867A (ja) * 2022-11-29 2024-06-10 株式会社東芝 半導体装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3364400A (en) * 1964-10-22 1968-01-16 Texas Instruments Inc Microwave transistor package
US3820153A (en) * 1972-08-28 1974-06-25 Zyrotron Ind Inc Plurality of semiconductor elements mounted on common base
US4012768A (en) * 1975-02-03 1977-03-15 Motorola, Inc. Semiconductor package
US4639760A (en) * 1986-01-21 1987-01-27 Motorola, Inc. High power RF transistor assembly
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
US5315155A (en) * 1992-07-13 1994-05-24 Olin Corporation Electronic package with stress relief channel
DE4300516C2 (de) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Leistungshalbleitermodul
US5710695A (en) * 1995-11-07 1998-01-20 Vlsi Technology, Inc. Leadframe ball grid array package
JP2755252B2 (ja) * 1996-05-30 1998-05-20 日本電気株式会社 半導体装置用パッケージ及び半導体装置
JPH1098140A (ja) * 1996-09-24 1998-04-14 Hitachi Ltd マルチチップ型半導体装置
JP3347146B2 (ja) * 1996-10-10 2002-11-20 サムソン・エレクトロニクス・カンパニー・リミテッド パワーマイクロ波ハイブリッド集積回路
JPH11126858A (ja) * 1997-10-23 1999-05-11 Sanken Electric Co Ltd 薄型半導体装置
JP3525832B2 (ja) * 1999-11-24 2004-05-10 株式会社デンソー 半導体装置
US6693350B2 (en) 1999-11-24 2004-02-17 Denso Corporation Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure
US6703707B1 (en) * 1999-11-24 2004-03-09 Denso Corporation Semiconductor device having radiation structure
JP3826667B2 (ja) * 2000-04-19 2006-09-27 株式会社デンソー 両面冷却型半導体カ−ドモジュ−ル及びそれを用いた冷媒間接冷却型半導体装置
JP4218193B2 (ja) * 2000-08-24 2009-02-04 三菱電機株式会社 パワーモジュール
JP3923258B2 (ja) * 2001-01-17 2007-05-30 松下電器産業株式会社 電力制御系電子回路装置及びその製造方法
JP2002329804A (ja) * 2001-04-27 2002-11-15 Denso Corp 半導体装置
JP2003046036A (ja) 2001-08-01 2003-02-14 Denso Corp 半導体装置
JP3740116B2 (ja) 2002-11-11 2006-02-01 三菱電機株式会社 モールド樹脂封止型パワー半導体装置及びその製造方法
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
US7221042B2 (en) * 2004-11-24 2007-05-22 Agere Systems Inc Leadframe designs for integrated circuit plastic packages
DE102005016650B4 (de) * 2005-04-12 2009-11-19 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit stumpf gelöteten Anschluss- und Verbindungselementen

Also Published As

Publication number Publication date
US20060091512A1 (en) 2006-05-04
JP2006128555A (ja) 2006-05-18
JP4338620B2 (ja) 2009-10-07
US7642640B2 (en) 2010-01-05
CN1790692A (zh) 2006-06-21
DE102005050330A1 (de) 2006-06-08
DE102005050330B4 (de) 2015-03-12

Similar Documents

Publication Publication Date Title
JP4338620B2 (ja) 半導体装置及びその製造方法
JP5011115B2 (ja) マルチチップリードフレーム半導体パッケージ
US6566164B1 (en) Exposed copper strap in a semiconductor package
US20100193922A1 (en) Semiconductor chip package
US20080119065A1 (en) Circuit device
JP2003258166A (ja) 半導体装置
JP2005109100A (ja) 半導体装置およびその製造方法
WO2012111254A1 (ja) 半導体装置及びその製造方法
CN1783487B (zh) 电路装置及其制造方法
JP5009956B2 (ja) 半導体装置
US7705469B2 (en) Lead frame, semiconductor device using same and manufacturing method thereof
JP4899481B2 (ja) 外部に露出する放熱体を上部に有する樹脂封止型半導体装置の製法
CN110021565A (zh) 具有芯片载体的至少部分暴露的内侧壁的包封式无引线封装
US20050161782A1 (en) Hybrid integrated circuit device and manufacturing method of the same
CN109768023B (zh) 具有表面安装结构的扁平无引线封装体
CN201421841Y (zh) 引线框架和封装件
KR102345062B1 (ko) 반도체 패키지 및 그 제조 방법
CN116964732A (zh) 用于半导体功率模块的金属衬底结构和制造用于半导体功率模块的金属衬底结构的方法以及半导体功率模块
EP0999586A2 (en) Semiconductor device and method of producing same
JP4013780B2 (ja) 半導体装置の実装構造
EP4292129B1 (en) Semiconductor power module and method for manufacturing a semiconductor power module
JP4556732B2 (ja) 半導体装置及びその製造方法
JP4443503B2 (ja) 半導体装置及びその製造方法
CN121666900A (zh) 具有整体热耗散结构的半导体装置封装
JP4003656B2 (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20100317