CN100568505C - 具有自对准硅化物和外基极的双极晶体管 - Google Patents

具有自对准硅化物和外基极的双极晶体管 Download PDF

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Publication number
CN100568505C
CN100568505C CNB2005800382842A CN200580038284A CN100568505C CN 100568505 C CN100568505 C CN 100568505C CN B2005800382842 A CNB2005800382842 A CN B2005800382842A CN 200580038284 A CN200580038284 A CN 200580038284A CN 100568505 C CN100568505 C CN 100568505C
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China
Prior art keywords
emitter
base stage
injection region
substrate
outer base
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005800382842A
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English (en)
Chinese (zh)
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CN101057328A (zh
Inventor
玛瓦恩·H.·卡特
弗朗索瓦·帕杰蒂
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International Business Machines Corp
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International Business Machines Corp
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Publication of CN101057328A publication Critical patent/CN101057328A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

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  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2005800382842A 2004-11-10 2005-11-10 具有自对准硅化物和外基极的双极晶体管 Expired - Fee Related CN100568505C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/904,437 US7288829B2 (en) 2004-11-10 2004-11-10 Bipolar transistor with self-aligned retrograde extrinsic base implant profile and self-aligned silicide
US10/904,437 2004-11-10

Publications (2)

Publication Number Publication Date
CN101057328A CN101057328A (zh) 2007-10-17
CN100568505C true CN100568505C (zh) 2009-12-09

Family

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Family Applications (1)

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CNB2005800382842A Expired - Fee Related CN100568505C (zh) 2004-11-10 2005-11-10 具有自对准硅化物和外基极的双极晶体管

Country Status (6)

Country Link
US (2) US7288829B2 (enExample)
EP (1) EP1815517A4 (enExample)
JP (1) JP5038900B2 (enExample)
CN (1) CN100568505C (enExample)
TW (1) TW200635030A (enExample)
WO (1) WO2006053257A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102097464B (zh) * 2009-12-15 2012-10-03 上海华虹Nec电子有限公司 高压双极晶体管
CN101866856A (zh) * 2010-05-12 2010-10-20 上海宏力半导体制造有限公司 Npn晶体管及其制作方法
CN101908485B (zh) * 2010-06-11 2016-03-02 上海华虹宏力半导体制造有限公司 利用三块掩模板制作垂直双极型晶体管的方法
CN101916724B (zh) * 2010-07-23 2015-04-15 上海华虹宏力半导体制造有限公司 一种晶体管的制作方法
EP2418681B1 (en) * 2010-08-10 2017-10-11 Nxp B.V. Heterojunction Bipolar Transistor and Manufacturing Method
CN102412274B (zh) * 2011-01-13 2014-02-26 上海华虹宏力半导体制造有限公司 锗硅hbt工艺中垂直寄生型pnp器件及制造方法
SE535380C2 (sv) * 2011-01-31 2012-07-17 Fairchild Semiconductor Bipolär transistor i kiselkarbid med övervuxen emitter
US8603883B2 (en) 2011-11-16 2013-12-10 International Business Machines Corporation Interface control in a bipolar junction transistor
US9059231B2 (en) 2013-06-13 2015-06-16 International Business Machines Corporation T-shaped compound semiconductor lateral bipolar transistor on semiconductor-on-insulator
JP6219224B2 (ja) * 2014-04-21 2017-10-25 ルネサスエレクトロニクス株式会社 半導体装置
US9722057B2 (en) * 2015-06-23 2017-08-01 Global Foundries Inc. Bipolar junction transistors with a buried dielectric region in the active device region
US11276682B1 (en) * 2020-09-01 2022-03-15 Newport Fab, Llc Nickel silicide in bipolar complementary-metal-oxide-semiconductor (BiCMOS) device and method of manufacturing
US20230352570A1 (en) * 2022-04-29 2023-11-02 Globalfoundries U.S. Inc. Bipolar junction transistor

Citations (4)

* Cited by examiner, † Cited by third party
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US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
US6403437B1 (en) * 1997-06-11 2002-06-11 Commissariat A L'energie Atomique Method for making hyperfrequency transistor
US6551891B1 (en) * 1999-09-23 2003-04-22 Stmicroelectronics S.A. Process for fabricating a self-aligned vertical bipolar transistor
CN1524290A (zh) * 2001-12-10 2004-08-25 ض� 自对准紧凑双极型结式晶体管布局及其制造方法

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US3997367A (en) * 1975-11-20 1976-12-14 Bell Telephone Laboratories, Incorporated Method for making transistors
JPS63182860A (ja) * 1987-01-26 1988-07-28 Toshiba Corp 半導体装置とその製造方法
US5006476A (en) * 1988-09-07 1991-04-09 North American Philips Corp., Signetics Division Transistor manufacturing process using three-step base doping
US5302535A (en) * 1991-09-20 1994-04-12 Nec Corporation Method of manufacturing high speed bipolar transistor
JP2582519B2 (ja) 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
US5320972A (en) * 1993-01-07 1994-06-14 Northern Telecom Limited Method of forming a bipolar transistor
JPH07245313A (ja) * 1994-03-03 1995-09-19 Fuji Electric Co Ltd バイポーラトランジスタの製造方法
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
US6093614A (en) 1998-03-04 2000-07-25 Siemens Aktiengesellschaft Memory cell structure and fabrication
US6784467B1 (en) * 2002-08-13 2004-08-31 Newport Fab, Llc Method for fabricating a self-aligned bipolar transistor and related structure
US6534372B1 (en) 2000-11-22 2003-03-18 Newport Fab, Llc Method for fabricating a self-aligned emitter in a bipolar transistor
US6531720B2 (en) 2001-04-19 2003-03-11 International Business Machines Corporation Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors
US20030082882A1 (en) * 2001-10-31 2003-05-01 Babcock Jeffrey A. Control of dopant diffusion from buried layers in bipolar integrated circuits
KR100486304B1 (ko) * 2003-02-07 2005-04-29 삼성전자주식회사 자기정렬을 이용한 바이씨모스 제조방법
US7268428B2 (en) 2005-07-19 2007-09-11 International Business Machines Corporation Thermal paste containment for semiconductor modules

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6403437B1 (en) * 1997-06-11 2002-06-11 Commissariat A L'energie Atomique Method for making hyperfrequency transistor
US6239477B1 (en) * 1998-10-07 2001-05-29 Texas Instruments Incorporated Self-aligned transistor contact for epitaxial layers
US6551891B1 (en) * 1999-09-23 2003-04-22 Stmicroelectronics S.A. Process for fabricating a self-aligned vertical bipolar transistor
CN1524290A (zh) * 2001-12-10 2004-08-25 ض� 自对准紧凑双极型结式晶体管布局及其制造方法

Also Published As

Publication number Publication date
JP2008520088A (ja) 2008-06-12
US20060097350A1 (en) 2006-05-11
JP5038900B2 (ja) 2012-10-03
US7288829B2 (en) 2007-10-30
US20070275535A1 (en) 2007-11-29
EP1815517A1 (en) 2007-08-08
CN101057328A (zh) 2007-10-17
EP1815517A4 (en) 2009-08-05
WO2006053257A1 (en) 2006-05-18
US7732292B2 (en) 2010-06-08
TW200635030A (en) 2006-10-01

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Granted publication date: 20091209

Termination date: 20181110