CN100552080C - Co-Cr-Pt-B类合金溅射靶 - Google Patents
Co-Cr-Pt-B类合金溅射靶 Download PDFInfo
- Publication number
- CN100552080C CN100552080C CNB2005800098032A CN200580009803A CN100552080C CN 100552080 C CN100552080 C CN 100552080C CN B2005800098032 A CNB2005800098032 A CN B2005800098032A CN 200580009803 A CN200580009803 A CN 200580009803A CN 100552080 C CN100552080 C CN 100552080C
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- CN
- China
- Prior art keywords
- class alloy
- sputtering targets
- alloy sputtering
- concentrated phase
- rolling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C11/00—Alloys based on lead
- C22C11/04—Alloys based on lead with copper as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/06—Alloys based on chromium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
Abstract
Description
轧制率(%) | 加热处理或退火(℃) | 抗磁力(Hc)Oe | 抗磁力的面内偏差 | 岛状组织(μm) | 组织照片 | |
比较例1 | 0 | 1100 | 3300 | 150 | 铸造枝晶组织 | 图1 |
实施例1 | 17 | 1100 | 3293 | 63 | 50~100 | - |
实施例2 | 20 | 1100 | 3287 | 65 | 50~100 | - |
实施例3 | 25 | 1100 | 3290 | 68 | 50~100 | - |
实施例4 | 30 | 1100 | 3285 | 62 | 50~100 | 图2 |
实施例5 | 35 | 1100 | 3282 | 58 | 50~100 | - |
比较例2 | 70 | 1100 | 3130 | 55 | 300~500 | 图3 |
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004092645 | 2004-03-26 | ||
JP092645/2004 | 2004-03-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101061251A CN101061251A (zh) | 2007-10-24 |
CN100552080C true CN100552080C (zh) | 2009-10-21 |
Family
ID=35056228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800098032A Active CN100552080C (zh) | 2004-03-26 | 2005-02-15 | Co-Cr-Pt-B类合金溅射靶 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7927434B2 (zh) |
JP (1) | JP3964453B2 (zh) |
KR (1) | KR20060127267A (zh) |
CN (1) | CN100552080C (zh) |
MY (1) | MY140989A (zh) |
TW (1) | TW200532035A (zh) |
WO (1) | WO2005093124A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104975264A (zh) * | 2010-07-29 | 2015-10-14 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030012985A1 (en) | 1998-08-03 | 2003-01-16 | Mcalister Roy E. | Pressure energy conversion systems |
WO2005083148A1 (ja) * | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | 表面欠陥の少ないスパッタリングターゲット及びその表面加工方法 |
WO2006016473A1 (ja) * | 2004-08-10 | 2006-02-16 | Nippon Mining & Metals Co., Ltd. | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
JP4727664B2 (ja) * | 2005-06-15 | 2011-07-20 | Jx日鉱日石金属株式会社 | スパッタリングターゲット用酸化クロム粉末及びスパッタリングターゲット |
EP1923480A3 (en) * | 2005-07-22 | 2008-06-18 | Heraeus, Inc. | Enhanced sputter target manufacturing method |
JP2009013434A (ja) * | 2007-06-29 | 2009-01-22 | China Steel Corp | スパッタリング用ターゲット材の製造方法 |
CN101981224B (zh) | 2008-03-28 | 2012-08-22 | Jx日矿日石金属株式会社 | 非磁性材料粒子分散型强磁性材料溅射靶 |
JP5301531B2 (ja) * | 2008-04-03 | 2013-09-25 | Jx日鉱日石金属株式会社 | パーティクルの発生の少ないスパッタリングターゲット |
CN102224276B (zh) * | 2009-03-03 | 2014-02-19 | 吉坤日矿日石金属株式会社 | 溅射靶及其制造方法 |
SG172790A1 (en) | 2009-03-27 | 2011-08-29 | Jx Nippon Mining & Metals Corp | Ferromagnetic-material sputtering target of nonmagnetic-material particle dispersion type |
CN102482764B (zh) | 2009-08-06 | 2014-06-18 | 吉坤日矿日石金属株式会社 | 无机物粒子分散型溅射靶 |
WO2011070860A1 (ja) * | 2009-12-11 | 2011-06-16 | Jx日鉱日石金属株式会社 | 磁性材スパッタリングターゲット |
MY149437A (en) | 2010-01-21 | 2013-08-30 | Jx Nippon Mining & Metals Corp | Ferromagnetic material sputtering target |
JP4673453B1 (ja) * | 2010-01-21 | 2011-04-20 | Jx日鉱日石金属株式会社 | 強磁性材スパッタリングターゲット |
CN102482765B (zh) | 2010-07-20 | 2014-03-26 | 吉坤日矿日石金属株式会社 | 粉粒产生少的强磁性材料溅射靶 |
SG185768A1 (en) | 2010-07-20 | 2013-01-30 | Jx Nippon Mining & Metals Corp | Sputtering target of ferromagnetic material with low generation of particles |
CN103081009B (zh) | 2010-08-31 | 2016-05-18 | 吉坤日矿日石金属株式会社 | Fe-Pt型强磁性材料溅射靶 |
CN103080368B (zh) * | 2010-12-09 | 2014-08-27 | 吉坤日矿日石金属株式会社 | 强磁性材料溅射靶 |
CN103262166B (zh) | 2010-12-21 | 2016-10-26 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
CN105239042B (zh) * | 2011-06-30 | 2019-07-05 | 吉坤日矿日石金属株式会社 | Co-Cr-Pt-B型合金溅射靶及其制造方法 |
CN104081458B (zh) | 2012-01-18 | 2017-05-03 | 吉坤日矿日石金属株式会社 | Co‑Cr‑Pt 系溅射靶及其制造方法 |
CN104126026B (zh) | 2012-02-23 | 2016-03-23 | 吉坤日矿日石金属株式会社 | 含有铬氧化物的强磁性材料溅射靶 |
SG11201405348QA (en) * | 2012-03-09 | 2014-11-27 | Jx Nippon Mining & Metals Corp | Sputtering target for magnetic recording medium, and process for producing same |
JP5592022B2 (ja) | 2012-06-18 | 2014-09-17 | Jx日鉱日石金属株式会社 | 磁気記録膜用スパッタリングターゲット |
US9377105B2 (en) | 2013-03-12 | 2016-06-28 | Mcalister Technologies, Llc | Insert kits for multi-stage compressors and associated systems, processes and methods |
US8838367B1 (en) | 2013-03-12 | 2014-09-16 | Mcalister Technologies, Llc | Rotational sensor and controller |
WO2014144581A1 (en) | 2013-03-15 | 2014-09-18 | Mcalister Technologies, Llc | Internal combustion engine and associated systems and methods |
US9255560B2 (en) | 2013-03-15 | 2016-02-09 | Mcalister Technologies, Llc | Regenerative intensifier and associated systems and methods |
EP3015566B1 (en) | 2013-11-28 | 2021-09-15 | JX Nippon Mining & Metals Corporation | Magnetic material sputtering target and method for producing same |
CN104032274B (zh) * | 2014-06-12 | 2016-07-20 | 贵研铂业股份有限公司 | 一种CoCrPt系合金溅射靶材和薄膜及其制备方法 |
KR102152586B1 (ko) | 2015-03-04 | 2020-09-07 | 제이엑스금속주식회사 | 자성재 스퍼터링 타깃 및 그 제조 방법 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US4803577A (en) | 1985-06-12 | 1989-02-07 | Tdk Corporation | Vertical magnetic recording system using rigid disk |
JPS6314864A (ja) | 1986-07-08 | 1988-01-22 | Ulvac Corp | Co基合金スパツタタ−ゲツトおよびその製造法 |
EP0435159B1 (en) | 1989-12-27 | 1994-03-09 | Mitsubishi Kasei Corporation | Longitudinal magnetic recording medium |
JP2806228B2 (ja) * | 1993-10-25 | 1998-09-30 | 株式会社神戸製鋼所 | 難加工性Co合金の低透磁率化方法 |
JP2000096220A (ja) | 1998-09-21 | 2000-04-04 | Hitachi Metals Ltd | CoCr系スパッタリングターゲットおよびその製造方法 |
JP2001026860A (ja) * | 1999-07-14 | 2001-01-30 | Hitachi Metals Ltd | Co−Pt−B系ターゲットおよびその製造方法 |
US6599377B2 (en) | 1999-10-01 | 2003-07-29 | Heraeus, Inc. | Wrought processing of brittle target alloy for sputtering applications |
JP2002069623A (ja) * | 2000-08-30 | 2002-03-08 | Hitachi Metals Ltd | Co−Cr−Pt−B系ターゲットおよび磁気記録媒体 |
JP2002069625A (ja) * | 2000-09-01 | 2002-03-08 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲットの製造方法 |
JP2002208125A (ja) | 2001-01-05 | 2002-07-26 | Hitachi Metals Ltd | Co−Cr−Pt系ターゲット材および磁気記録媒体 |
WO2005083148A1 (ja) * | 2004-03-01 | 2005-09-09 | Nippon Mining & Metals Co., Ltd. | 表面欠陥の少ないスパッタリングターゲット及びその表面加工方法 |
WO2006016473A1 (ja) | 2004-08-10 | 2006-02-16 | Nippon Mining & Metals Co., Ltd. | フレキシブル銅基板用バリア膜及びバリア膜形成用スパッタリングターゲット |
-
2005
- 2005-02-15 WO PCT/JP2005/002221 patent/WO2005093124A1/ja active Application Filing
- 2005-02-15 JP JP2006511399A patent/JP3964453B2/ja not_active Expired - Fee Related
- 2005-02-15 US US10/598,997 patent/US7927434B2/en active Active
- 2005-02-15 KR KR1020067022024A patent/KR20060127267A/ko active Search and Examination
- 2005-02-15 CN CNB2005800098032A patent/CN100552080C/zh active Active
- 2005-02-21 TW TW094105013A patent/TW200532035A/zh unknown
- 2005-03-17 MY MYPI20051142A patent/MY140989A/en unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104975264A (zh) * | 2010-07-29 | 2015-10-14 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
CN104975264B (zh) * | 2010-07-29 | 2020-07-28 | 吉坤日矿日石金属株式会社 | 磁记录膜用溅射靶及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070187236A1 (en) | 2007-08-16 |
JP3964453B2 (ja) | 2007-08-22 |
US7927434B2 (en) | 2011-04-19 |
WO2005093124A1 (ja) | 2005-10-06 |
MY140989A (en) | 2010-02-12 |
JPWO2005093124A1 (ja) | 2008-02-14 |
KR20060127267A (ko) | 2006-12-11 |
CN101061251A (zh) | 2007-10-24 |
TW200532035A (en) | 2005-10-01 |
TWI299063B (zh) | 2008-07-21 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: JX NIPPON MINING + METALS CORPORATION Free format text: FORMER NAME: NIPPON MINING + METALS CO., LTD. |
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CP03 | Change of name, title or address |
Address after: Tokyo, Japan Patentee after: JX Nippon Mining & Metals Corporation Address before: Tokyo, Japan, Japan Patentee before: Nippon Mining & Metals Co., Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: JX NIPPON MINING & METALS CORPORATION Address before: Tokyo, Japan Patentee before: JX Nippon Mining & Metals Corporation |