CN100550205C - 非易失性存储器系统和编程非易失性存储器的方法 - Google Patents
非易失性存储器系统和编程非易失性存储器的方法 Download PDFInfo
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- CN100550205C CN100550205C CNB2005800193889A CN200580019388A CN100550205C CN 100550205 C CN100550205 C CN 100550205C CN B2005800193889 A CNB2005800193889 A CN B2005800193889A CN 200580019388 A CN200580019388 A CN 200580019388A CN 100550205 C CN100550205 C CN 100550205C
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- programming
- bit line
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- memory device
- volatile memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (49)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/839,806 | 2004-05-05 | ||
US10/839,764 US7023733B2 (en) | 2004-05-05 | 2004-05-05 | Boosting to control programming of non-volatile memory |
US10/839,764 | 2004-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1973335A CN1973335A (zh) | 2007-05-30 |
CN100550205C true CN100550205C (zh) | 2009-10-14 |
Family
ID=35456586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800193889A Active CN100550205C (zh) | 2004-05-05 | 2005-04-20 | 非易失性存储器系统和编程非易失性存储器的方法 |
Country Status (2)
Country | Link |
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US (3) | US7023733B2 (zh) |
CN (1) | CN100550205C (zh) |
Families Citing this family (65)
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2004
- 2004-05-05 US US10/839,764 patent/US7023733B2/en active Active
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2005
- 2005-04-20 CN CNB2005800193889A patent/CN100550205C/zh active Active
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2006
- 2006-03-29 US US11/392,901 patent/US7301812B2/en not_active Expired - Lifetime
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2007
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US7301812B2 (en) | 2007-11-27 |
US7411827B2 (en) | 2008-08-12 |
US20060198192A1 (en) | 2006-09-07 |
CN1973335A (zh) | 2007-05-30 |
US20050248988A1 (en) | 2005-11-10 |
US20080068891A1 (en) | 2008-03-20 |
US7023733B2 (en) | 2006-04-04 |
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