CN100536323C - 功率放大器模块 - Google Patents

功率放大器模块 Download PDF

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Publication number
CN100536323C
CN100536323C CNB018109640A CN01810964A CN100536323C CN 100536323 C CN100536323 C CN 100536323C CN B018109640 A CNB018109640 A CN B018109640A CN 01810964 A CN01810964 A CN 01810964A CN 100536323 C CN100536323 C CN 100536323C
Authority
CN
China
Prior art keywords
current
transistor
circuit
voltage
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB018109640A
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English (en)
Chinese (zh)
Other versions
CN1436398A (zh
Inventor
山下喜市
田上知纪
太部功
关根健治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1436398A publication Critical patent/CN1436398A/zh
Application granted granted Critical
Publication of CN100536323C publication Critical patent/CN100536323C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
CNB018109640A 2000-08-31 2001-08-20 功率放大器模块 Expired - Fee Related CN100536323C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP268368/00 2000-08-31
JP268368/2000 2000-08-31
JP2000268368A JP3904817B2 (ja) 2000-08-31 2000-08-31 電力増幅器モジュール

Publications (2)

Publication Number Publication Date
CN1436398A CN1436398A (zh) 2003-08-13
CN100536323C true CN100536323C (zh) 2009-09-02

Family

ID=18755155

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB018109640A Expired - Fee Related CN100536323C (zh) 2000-08-31 2001-08-20 功率放大器模块

Country Status (7)

Country Link
US (1) US6816017B2 (enExample)
EP (1) EP1315289B1 (enExample)
JP (1) JP3904817B2 (enExample)
CN (1) CN100536323C (enExample)
DE (1) DE60136083D1 (enExample)
TW (1) TWI236210B (enExample)
WO (1) WO2002019519A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN104158500A (zh) * 2013-05-14 2014-11-19 上海华虹宏力半导体制造有限公司 射频功率放大器

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US7929718B1 (en) 2003-05-12 2011-04-19 D2Audio Corporation Systems and methods for switching and mixing signals in a multi-channel amplifier
JP2005064658A (ja) 2003-08-08 2005-03-10 Mitsubishi Electric Corp 電力増幅器用過出力電圧保護回路
JP2005191791A (ja) * 2003-12-25 2005-07-14 Matsushita Electric Ind Co Ltd 電力増幅器の保護回路
JP2005210316A (ja) 2004-01-21 2005-08-04 Matsushita Electric Ind Co Ltd 反射電力抑制回路
JP4979051B2 (ja) * 2004-11-09 2012-07-18 株式会社村田製作所 高周波電力増幅用電子部品の使用方法
ATE522024T1 (de) * 2004-11-29 2011-09-15 Nxp Bv Strombegrenzungsschaltung für rf- leistungsverstärker
JP4519659B2 (ja) * 2005-01-06 2010-08-04 ルネサスエレクトロニクス株式会社 バイアス回路
US7262657B2 (en) * 2005-03-21 2007-08-28 Skyworks Solutions, Inc. Bias control for reducing amplifier power consumption and maintaining linearity
US7304541B2 (en) * 2005-06-15 2007-12-04 Fairchild Semiconductor Corporation Temperature compensated voltage regulator integrated with MMIC's
JP2007043444A (ja) * 2005-08-03 2007-02-15 Matsushita Electric Ind Co Ltd 半導体集積回路
US7286010B2 (en) * 2006-01-26 2007-10-23 D2Audio Corporation Systems and methods for over-current protection
EP1855379B1 (en) * 2006-05-12 2011-02-09 STMicroelectronics Srl Output power control of an RF amplifier
US7869775B2 (en) 2006-10-30 2011-01-11 Skyworks Solutions, Inc. Circuit and method for biasing a gallium arsenide (GaAs) power amplifier
JP5138990B2 (ja) * 2007-06-28 2013-02-06 ラピスセミコンダクタ株式会社 前置増幅器および光受信装置
JP4946728B2 (ja) * 2007-08-23 2012-06-06 三菱電機株式会社 電力増幅器
JP2009100337A (ja) * 2007-10-18 2009-05-07 Renesas Technology Corp 可変利得増幅器を内蔵する半導体集積回路
KR20100098654A (ko) 2007-12-31 2010-09-08 인터실 아메리카스 인코포레이티드 개선된 과전류 클리핑 시스템 및 방법
US7576526B2 (en) * 2008-01-16 2009-08-18 Freescale Semiconductor, Inc Overcurrent detection circuit
US7760781B1 (en) * 2008-04-29 2010-07-20 Gigoptix, Inc. Current control mechanism for low voltage applications
US8350418B2 (en) * 2009-10-02 2013-01-08 Skyworks Solutions, Inc. Circuit and method for generating a reference voltage
JP2011205394A (ja) * 2010-03-25 2011-10-13 Panasonic Corp 半導体素子の駆動回路、および駆動回路を有する半導体装置
US8400218B2 (en) 2010-11-15 2013-03-19 Qualcomm, Incorporated Current mode power amplifier providing harmonic distortion suppression
US20120210151A1 (en) * 2011-02-11 2012-08-16 Mediatek Inc. Communication systems
JP5342033B2 (ja) * 2012-03-13 2013-11-13 株式会社東芝 デジタル振幅変調装置及びデジタル振幅変調装置の制御方法
WO2014103495A1 (ja) 2012-12-26 2014-07-03 株式会社村田製作所 高周波増幅回路
US9698853B2 (en) * 2013-07-31 2017-07-04 Skyworks Solutions, Inc. Power amplifier open loop current clamp
CN103973241B (zh) * 2014-04-03 2016-08-24 络达科技股份有限公司 可动态调整增益的功率放大电路
US11508834B2 (en) * 2014-11-27 2022-11-22 Murata Manufacturing Co., Ltd. Compound semiconductor device
CN104579191A (zh) * 2014-12-31 2015-04-29 苏州英诺迅科技股份有限公司 一种用于功放保护的驻波电压保护电路
CN105048977A (zh) * 2015-07-30 2015-11-11 络达科技股份有限公司 具有动态偏压的放大器
CN106370299B (zh) * 2016-08-28 2018-01-23 钟传新 一种功率放大装置
US11043919B2 (en) 2018-07-26 2021-06-22 Samsung Electronics Co., Ltd. Power amplifier
JP2020184665A (ja) 2019-05-07 2020-11-12 株式会社村田製作所 送受信回路

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US3967207A (en) * 1973-05-24 1976-06-29 Rca Corporation Amplifier with over-current protection
CN1256824C (zh) * 2000-07-21 2006-05-17 三星电子株式会社 利用秘密－公开因特网协议地址/通用资源定位地址映射的环球网上家用网络的结构

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US5398004A (en) * 1994-02-09 1995-03-14 Trw Inc. HBT direct-coupled low noise wideband microwave amplifier
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US3967207A (en) * 1973-05-24 1976-06-29 Rca Corporation Amplifier with over-current protection
CN1256824C (zh) * 2000-07-21 2006-05-17 三星电子株式会社 利用秘密－公开因特网协议地址/通用资源定位地址映射的环球网上家用网络的结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104158500A (zh) * 2013-05-14 2014-11-19 上海华虹宏力半导体制造有限公司 射频功率放大器
CN104158500B (zh) * 2013-05-14 2017-03-29 上海华虹宏力半导体制造有限公司 射频功率放大器

Also Published As

Publication number Publication date
WO2002019519A1 (en) 2002-03-07
JP2002076791A (ja) 2002-03-15
TWI236210B (en) 2005-07-11
EP1315289A1 (en) 2003-05-28
US20020024390A1 (en) 2002-02-28
EP1315289B1 (en) 2008-10-08
DE60136083D1 (de) 2008-11-20
CN1436398A (zh) 2003-08-13
US6816017B2 (en) 2004-11-09
EP1315289A4 (en) 2005-08-10
JP3904817B2 (ja) 2007-04-11

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: RENESAS ELECTRONICS CORPORATION

Free format text: FORMER OWNER: HITACHI, LTD.

Effective date: 20121108

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121108

Address after: Kanagawa, Japan

Patentee after: Renesas Electronics Corporation

Address before: Tokyo, Japan

Patentee before: Hitachi Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090902

Termination date: 20160820