CN1436398A - 功率放大器模块 - Google Patents
功率放大器模块 Download PDFInfo
- Publication number
- CN1436398A CN1436398A CN01810964A CN01810964A CN1436398A CN 1436398 A CN1436398 A CN 1436398A CN 01810964 A CN01810964 A CN 01810964A CN 01810964 A CN01810964 A CN 01810964A CN 1436398 A CN1436398 A CN 1436398A
- Authority
- CN
- China
- Prior art keywords
- mentioned
- current
- power amplifier
- amplifier module
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0261—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the polarisation voltage or current, e.g. gliding Class A
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—Dc amplifiers in which all stages are dc-coupled
- H03F3/343—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only
- H03F3/347—Dc amplifiers in which all stages are dc-coupled with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/444—Diode used as protection means in an amplifier, e.g. as a limiter or as a switch
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000268368A JP3904817B2 (ja) | 2000-08-31 | 2000-08-31 | 電力増幅器モジュール |
JP268368/2000 | 2000-08-31 | ||
JP268368/00 | 2000-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1436398A true CN1436398A (zh) | 2003-08-13 |
CN100536323C CN100536323C (zh) | 2009-09-02 |
Family
ID=18755155
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018109640A Expired - Fee Related CN100536323C (zh) | 2000-08-31 | 2001-08-20 | 功率放大器模块 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6816017B2 (zh) |
EP (1) | EP1315289B1 (zh) |
JP (1) | JP3904817B2 (zh) |
CN (1) | CN100536323C (zh) |
DE (1) | DE60136083D1 (zh) |
TW (1) | TWI236210B (zh) |
WO (1) | WO2002019519A1 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101414805B (zh) * | 2007-10-18 | 2011-05-18 | 瑞萨电子株式会社 | 内置可变增益放大器的半导体集成电路 |
CN102129266A (zh) * | 2009-10-02 | 2011-07-20 | 天工方案公司 | 产生参考电压的电路及方法 |
CN101373953B (zh) * | 2007-08-23 | 2011-08-10 | 三菱电机株式会社 | 功率放大器 |
CN101375494B (zh) * | 2006-01-26 | 2011-08-17 | D2音频有限公司 | 用于过流保护的系统和方法 |
CN102637055A (zh) * | 2011-02-11 | 2012-08-15 | 联发科技股份有限公司 | 通信系统 |
CN101335503B (zh) * | 2007-06-28 | 2012-09-19 | 冲电气工业株式会社 | 前置放大器和光接收装置 |
CN101911478B (zh) * | 2007-12-31 | 2013-08-14 | 英特赛尔美国股份有限公司 | 用于经改善的过电流削波的系统及方法 |
CN104579191A (zh) * | 2014-12-31 | 2015-04-29 | 苏州英诺迅科技股份有限公司 | 一种用于功放保护的驻波电压保护电路 |
CN105453420A (zh) * | 2013-07-31 | 2016-03-30 | 天工方案公司 | 功率放大器开环电流钳 |
CN103973241B (zh) * | 2014-04-03 | 2016-08-24 | 络达科技股份有限公司 | 可动态调整增益的功率放大电路 |
CN106370299A (zh) * | 2016-08-28 | 2017-02-01 | 桂林市晶准测控技术有限公司 | 一种功率放大装置 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621351B2 (en) * | 2001-08-23 | 2003-09-16 | Motorola, Inc. | RF amplifier and method therefor |
US6750722B2 (en) * | 2002-06-28 | 2004-06-15 | Freescale Semiconductor, Inc. | Bias control for HBT power amplifiers |
US6906592B2 (en) * | 2002-11-13 | 2005-06-14 | Qualcomm Inc | Continuously variable gain radio frequency driver amplifier having linear in decibel gain control characteristics |
AU2003282278A1 (en) * | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Power amplifier with bias control |
DE10305366A1 (de) * | 2003-02-10 | 2004-08-26 | Infineon Technologies Ag | Schaltungsanordnung und Verfahren zum beschleunigten Umschalten eines Verstärkers |
WO2004081688A1 (en) * | 2003-03-10 | 2004-09-23 | Koninklijke Philips Electronics N.V. | Current mirror |
US7590251B2 (en) * | 2003-03-21 | 2009-09-15 | D2Audio Corporation | Clip detection in PWM amplifier |
US7929718B1 (en) | 2003-05-12 | 2011-04-19 | D2Audio Corporation | Systems and methods for switching and mixing signals in a multi-channel amplifier |
JP2005064658A (ja) | 2003-08-08 | 2005-03-10 | Mitsubishi Electric Corp | 電力増幅器用過出力電圧保護回路 |
JP2005191791A (ja) * | 2003-12-25 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 電力増幅器の保護回路 |
JP2005210316A (ja) | 2004-01-21 | 2005-08-04 | Matsushita Electric Ind Co Ltd | 反射電力抑制回路 |
JP4979051B2 (ja) * | 2004-11-09 | 2012-07-18 | 株式会社村田製作所 | 高周波電力増幅用電子部品の使用方法 |
US7873335B2 (en) * | 2004-11-29 | 2011-01-18 | Nxp B.V. | Current limiting circuit for RF power amplifier |
JP4519659B2 (ja) * | 2005-01-06 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | バイアス回路 |
US7262657B2 (en) * | 2005-03-21 | 2007-08-28 | Skyworks Solutions, Inc. | Bias control for reducing amplifier power consumption and maintaining linearity |
US7304541B2 (en) * | 2005-06-15 | 2007-12-04 | Fairchild Semiconductor Corporation | Temperature compensated voltage regulator integrated with MMIC's |
JP2007043444A (ja) * | 2005-08-03 | 2007-02-15 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
EP1855379B1 (en) * | 2006-05-12 | 2011-02-09 | STMicroelectronics Srl | Output power control of an RF amplifier |
US7869775B2 (en) | 2006-10-30 | 2011-01-11 | Skyworks Solutions, Inc. | Circuit and method for biasing a gallium arsenide (GaAs) power amplifier |
US7576526B2 (en) * | 2008-01-16 | 2009-08-18 | Freescale Semiconductor, Inc | Overcurrent detection circuit |
US7760781B1 (en) | 2008-04-29 | 2010-07-20 | Gigoptix, Inc. | Current control mechanism for low voltage applications |
JP2011205394A (ja) * | 2010-03-25 | 2011-10-13 | Panasonic Corp | 半導体素子の駆動回路、および駆動回路を有する半導体装置 |
US8400218B2 (en) | 2010-11-15 | 2013-03-19 | Qualcomm, Incorporated | Current mode power amplifier providing harmonic distortion suppression |
JP5342033B2 (ja) * | 2012-03-13 | 2013-11-13 | 株式会社東芝 | デジタル振幅変調装置及びデジタル振幅変調装置の制御方法 |
JP5773092B2 (ja) | 2012-12-26 | 2015-09-02 | 株式会社村田製作所 | 高周波増幅回路 |
CN104158500B (zh) * | 2013-05-14 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 射频功率放大器 |
US11508834B2 (en) * | 2014-11-27 | 2022-11-22 | Murata Manufacturing Co., Ltd. | Compound semiconductor device |
CN105048977A (zh) * | 2015-07-30 | 2015-11-11 | 络达科技股份有限公司 | 具有动态偏压的放大器 |
US11043919B2 (en) | 2018-07-26 | 2021-06-22 | Samsung Electronics Co., Ltd. | Power amplifier |
JP2020184665A (ja) * | 2019-05-07 | 2020-11-12 | 株式会社村田製作所 | 送受信回路 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1809570A1 (de) * | 1967-11-21 | 1969-06-26 | Sony Corp | Transistorschutzschaltung |
GB1238950A (zh) * | 1968-09-27 | 1971-07-14 | ||
JPS5345109B2 (zh) * | 1972-09-26 | 1978-12-04 | ||
GB1467057A (en) * | 1973-05-24 | 1977-03-16 | Rca Corp | Amplifier with over-current protection |
JPS5168758A (en) * | 1974-12-11 | 1976-06-14 | Sony Corp | Zofukukairono hogokairo |
IT1049596B (it) * | 1975-09-18 | 1981-02-10 | Ates Componenti Elettron | Dispositivo di protezione per un elemento di potenza di un circuito integrato |
US4355341A (en) * | 1980-06-30 | 1982-10-19 | Rca Corporation | Power protection circuit for transistors |
JPS5765909A (en) * | 1980-10-13 | 1982-04-21 | Fujitsu Ltd | Line driver circuit having overcurrent protecting function |
US4321648A (en) * | 1981-02-25 | 1982-03-23 | Rca Corporation | Over-current protection circuits for power transistors |
NL8302902A (nl) * | 1983-08-18 | 1985-03-18 | Philips Nv | Transistorbeveiligingsschakeling. |
JPH0683042B2 (ja) * | 1986-03-31 | 1994-10-19 | 株式会社東芝 | 出力ドライバ回路 |
US4789842A (en) * | 1987-11-23 | 1988-12-06 | Jiri Naxera | Composite transistor device with over-current protection |
JPH0817293B2 (ja) | 1988-11-16 | 1996-02-21 | 三洋電機株式会社 | ドライバー回路 |
US5343141A (en) * | 1992-06-09 | 1994-08-30 | Cherry Semiconductor Corporation | Transistor overcurrent protection circuit |
US5422522A (en) * | 1992-08-20 | 1995-06-06 | Sgs-Thomson Microelectronics, Inc. | Device for biasing an RF device operating in quasi-linear modes with temperature compensation |
US5357089A (en) * | 1993-02-26 | 1994-10-18 | Harris Corporation | Circuit and method for extending the safe operating area of a BJT |
US5398004A (en) * | 1994-02-09 | 1995-03-14 | Trw Inc. | HBT direct-coupled low noise wideband microwave amplifier |
US5404114A (en) * | 1994-06-23 | 1995-04-04 | Rockwell International Corporation | Method and apparatus for providing transmitter protection |
EP0772273B1 (en) * | 1995-10-31 | 2001-08-29 | STMicroelectronics S.r.l. | Sensor of the instant power dissipated in a power transistor |
FI105611B (fi) * | 1998-03-13 | 2000-09-15 | Nokia Mobile Phones Ltd | Radiotajuusvahvistimet |
US6137366A (en) * | 1998-04-07 | 2000-10-24 | Maxim Integrated Products, Inc. | High VSWR mismatch output stage |
JP2000209038A (ja) * | 1998-11-12 | 2000-07-28 | Hitachi Ltd | 高周波電力増幅装置および無線通信機 |
US6329879B1 (en) * | 1998-11-12 | 2001-12-11 | Hitachi, Ltd. | High frequency power amplifier system and wireless communication system |
US6300837B1 (en) * | 2000-03-28 | 2001-10-09 | Philips Electronics North America Corporation | Dynamic bias boosting circuit for a power amplifier |
US7337217B2 (en) * | 2000-07-21 | 2008-02-26 | Samsung Electronics Co., Ltd. | Architecture for home network on world wide web |
-
2000
- 2000-08-31 JP JP2000268368A patent/JP3904817B2/ja not_active Expired - Fee Related
-
2001
- 2001-07-17 TW TW090117436A patent/TWI236210B/zh not_active IP Right Cessation
- 2001-08-20 US US09/931,877 patent/US6816017B2/en not_active Expired - Fee Related
- 2001-08-20 EP EP01956962A patent/EP1315289B1/en not_active Expired - Lifetime
- 2001-08-20 DE DE60136083T patent/DE60136083D1/de not_active Expired - Lifetime
- 2001-08-20 WO PCT/JP2001/007110 patent/WO2002019519A1/ja active Application Filing
- 2001-08-20 CN CNB018109640A patent/CN100536323C/zh not_active Expired - Fee Related
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102299690B (zh) * | 2006-01-26 | 2014-06-18 | 英特赛尔美国有限公司 | 用于过流保护的系统和方法 |
CN101375494B (zh) * | 2006-01-26 | 2011-08-17 | D2音频有限公司 | 用于过流保护的系统和方法 |
CN101335503B (zh) * | 2007-06-28 | 2012-09-19 | 冲电气工业株式会社 | 前置放大器和光接收装置 |
CN101373953B (zh) * | 2007-08-23 | 2011-08-10 | 三菱电机株式会社 | 功率放大器 |
CN101414805B (zh) * | 2007-10-18 | 2011-05-18 | 瑞萨电子株式会社 | 内置可变增益放大器的半导体集成电路 |
CN101911478B (zh) * | 2007-12-31 | 2013-08-14 | 英特赛尔美国股份有限公司 | 用于经改善的过电流削波的系统及方法 |
CN102129266A (zh) * | 2009-10-02 | 2011-07-20 | 天工方案公司 | 产生参考电压的电路及方法 |
CN102129266B (zh) * | 2009-10-02 | 2013-12-18 | 天工方案公司 | 产生参考电压的电路及方法 |
CN102637055A (zh) * | 2011-02-11 | 2012-08-15 | 联发科技股份有限公司 | 通信系统 |
CN102637055B (zh) * | 2011-02-11 | 2014-10-08 | 联发科技股份有限公司 | 通信系统 |
CN105453420A (zh) * | 2013-07-31 | 2016-03-30 | 天工方案公司 | 功率放大器开环电流钳 |
CN105453420B (zh) * | 2013-07-31 | 2018-08-14 | 天工方案公司 | 功率放大器开环电流钳 |
CN103973241B (zh) * | 2014-04-03 | 2016-08-24 | 络达科技股份有限公司 | 可动态调整增益的功率放大电路 |
CN104579191A (zh) * | 2014-12-31 | 2015-04-29 | 苏州英诺迅科技股份有限公司 | 一种用于功放保护的驻波电压保护电路 |
CN106370299A (zh) * | 2016-08-28 | 2017-02-01 | 桂林市晶准测控技术有限公司 | 一种功率放大装置 |
CN106370299B (zh) * | 2016-08-28 | 2018-01-23 | 钟传新 | 一种功率放大装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1315289A4 (en) | 2005-08-10 |
TWI236210B (en) | 2005-07-11 |
JP3904817B2 (ja) | 2007-04-11 |
US20020024390A1 (en) | 2002-02-28 |
EP1315289A1 (en) | 2003-05-28 |
US6816017B2 (en) | 2004-11-09 |
WO2002019519A1 (fr) | 2002-03-07 |
DE60136083D1 (de) | 2008-11-20 |
CN100536323C (zh) | 2009-09-02 |
EP1315289B1 (en) | 2008-10-08 |
JP2002076791A (ja) | 2002-03-15 |
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SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER OWNER: HITACHI, LTD. Effective date: 20121108 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121108 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Tokyo, Japan Patentee before: Hitachi Ltd. |
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Granted publication date: 20090902 Termination date: 20160820 |
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