CN100526983C - 形成防反射膜的组合物 - Google Patents

形成防反射膜的组合物 Download PDF

Info

Publication number
CN100526983C
CN100526983C CNB038042126A CN03804212A CN100526983C CN 100526983 C CN100526983 C CN 100526983C CN B038042126 A CNB038042126 A CN B038042126A CN 03804212 A CN03804212 A CN 03804212A CN 100526983 C CN100526983 C CN 100526983C
Authority
CN
China
Prior art keywords
antireflection film
composition
forming
polymer compound
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038042126A
Other languages
English (en)
Chinese (zh)
Other versions
CN1636166A (zh
Inventor
坂本力丸
水泽贤一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of CN1636166A publication Critical patent/CN1636166A/zh
Application granted granted Critical
Publication of CN100526983C publication Critical patent/CN100526983C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Paints Or Removers (AREA)
CNB038042126A 2002-02-19 2003-02-14 形成防反射膜的组合物 Expired - Fee Related CN100526983C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002041482 2002-02-19
JP41482/2002 2002-02-19
JP167343/2002 2002-06-07
JP2002167343 2002-06-07

Publications (2)

Publication Number Publication Date
CN1636166A CN1636166A (zh) 2005-07-06
CN100526983C true CN100526983C (zh) 2009-08-12

Family

ID=27759636

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038042126A Expired - Fee Related CN100526983C (zh) 2002-02-19 2003-02-14 形成防反射膜的组合物

Country Status (7)

Country Link
US (1) US7309560B2 (enExample)
EP (1) EP1484645A4 (enExample)
JP (1) JP4038688B2 (enExample)
KR (1) KR100949343B1 (enExample)
CN (1) CN100526983C (enExample)
TW (1) TW200303455A (enExample)
WO (1) WO2003071357A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002006902A2 (en) 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
JP2004101794A (ja) * 2002-09-09 2004-04-02 Toray Ind Inc 半導体装置用平坦化組成物
US20040112862A1 (en) * 2002-12-12 2004-06-17 Molecular Imprints, Inc. Planarization composition and method of patterning a substrate using the same
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
US20060108710A1 (en) * 2004-11-24 2006-05-25 Molecular Imprints, Inc. Method to reduce adhesion between a conformable region and a mold
US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7122482B2 (en) * 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7501229B2 (en) 2004-03-16 2009-03-10 Nissan Chemical Industries, Ltd. Anti-reflective coating containing sulfur atom
US7939131B2 (en) * 2004-08-16 2011-05-10 Molecular Imprints, Inc. Method to provide a layer with uniform etch characteristics
US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US7189640B2 (en) * 2004-12-02 2007-03-13 United Microelectronics Corp. Method of forming damascene structures
JP4595606B2 (ja) * 2005-03-17 2010-12-08 Ｊｓｒ株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7375172B2 (en) 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
JP5014822B2 (ja) * 2006-02-13 2012-08-29 Ｈｏｙａ株式会社 マスクブランク用レジスト下層膜形成組成物、マスクブランク及びマスク
US7563563B2 (en) * 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
US7651830B2 (en) * 2007-06-01 2010-01-26 3M Innovative Properties Company Patterned photoacid etching and articles therefrom
US20090101203A1 (en) * 2007-10-23 2009-04-23 Guardian Industries Corp. Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same
CN101946209B (zh) * 2008-02-18 2014-01-22 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
CN104749887A (zh) * 2009-04-21 2015-07-01 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
US8617641B2 (en) * 2009-11-12 2013-12-31 Guardian Industries Corp. Coated article comprising colloidal silica inclusive anti-reflective coating, and method of making the same
CN103415809B (zh) * 2011-03-15 2017-03-15 日产化学工业株式会社 形成抗蚀剂下层膜的组合物及使用该组合物的抗蚀剂图案的形成方法
CN107735729B (zh) 2015-07-02 2021-09-28 日产化学工业株式会社 包含具有长链烷基的环氧基加成体的抗蚀剂下层膜形成用组合物
JP7255487B2 (ja) * 2017-09-22 2023-04-11 日産化学株式会社 レジスト下層膜形成組成物
KR102400604B1 (ko) * 2019-04-23 2022-05-19 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
JPWO2021157551A1 (enExample) * 2020-02-06 2021-08-12
CN113621278B (zh) * 2021-08-30 2022-05-27 厦门恒坤新材料科技股份有限公司 一种与光刻胶配合使用的底部抗反射涂料组合物及光刻胶浮雕图像形成方法
CN116009355A (zh) * 2023-01-18 2023-04-25 上海英迈特材料科技有限公司 双色紫外吸收染料结构、双色光刻抗反射涂层及制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217792A (zh) * 1996-05-06 1999-05-26 美国3M公司 防反射膜及其制造方法
JP2000294504A (ja) * 1999-03-08 2000-10-20 Shipley Co Llc フォトレジストレリーフイメージの形成方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5576359A (en) * 1993-07-20 1996-11-19 Wako Pure Chemical Industries, Ltd. Deep ultraviolet absorbent composition
US5498748A (en) * 1993-07-20 1996-03-12 Wako Pure Chemical Industries, Ltd. Anthracene derivatives
US5597868A (en) * 1994-03-04 1997-01-28 Massachusetts Institute Of Technology Polymeric anti-reflective compounds
US5693691A (en) 1995-08-21 1997-12-02 Brewer Science, Inc. Thermosetting anti-reflective coatings compositions
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
TW406215B (en) * 1996-08-07 2000-09-21 Fuji Photo Film Co Ltd Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern
JP3851402B2 (ja) * 1997-02-28 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びそれを利用したレジストパターン形成方法
JP3632875B2 (ja) 1996-12-24 2005-03-23 富士写真フイルム株式会社 反射防止膜材料用組成物
JP3852868B2 (ja) * 1997-02-06 2006-12-06 富士写真フイルム株式会社 反射防止膜材料組成物及びそれを用いたレジストパターン形成方法
US5919599A (en) * 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
JPH11194499A (ja) * 1998-01-07 1999-07-21 Sony Corp 半導体装置の製造方法
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
US20020102483A1 (en) 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
KR100355604B1 (ko) * 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
US6416690B1 (en) * 2000-02-16 2002-07-09 Zms, Llc Precision composite lens
JP4654544B2 (ja) * 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
US6495305B1 (en) * 2000-10-04 2002-12-17 Tomoyuki Enomoto Halogenated anti-reflective coatings
JP2002198283A (ja) 2000-12-25 2002-07-12 Toshiba Corp レジストパターン形成方法
JP3509760B2 (ja) * 2001-02-08 2004-03-22 株式会社半導体先端テクノロジーズ 半導体装置の製造方法
JP4729803B2 (ja) 2001-03-29 2011-07-20 Ｊｓｒ株式会社 多層レジストプロセス用下層膜形成組成物
JP4614197B2 (ja) 2001-06-14 2011-01-19 独立行政法人産業技術総合研究所 金属酸化物短繊維の製造方法
JP2003086487A (ja) * 2001-09-11 2003-03-20 Toshiba Corp 反射防止膜の光学定数の決定方法、およびレジストパターン形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1217792A (zh) * 1996-05-06 1999-05-26 美国3M公司 防反射膜及其制造方法
JP2000294504A (ja) * 1999-03-08 2000-10-20 Shipley Co Llc フォトレジストレリーフイメージの形成方法

Also Published As

Publication number Publication date
EP1484645A1 (en) 2004-12-08
CN1636166A (zh) 2005-07-06
TW200303455A (en) 2003-09-01
JP4038688B2 (ja) 2008-01-30
WO2003071357A1 (en) 2003-08-28
KR20040091066A (ko) 2004-10-27
US20050118749A1 (en) 2005-06-02
US7309560B2 (en) 2007-12-18
KR100949343B1 (ko) 2010-03-26
EP1484645A4 (en) 2008-12-17
JPWO2003071357A1 (ja) 2005-06-16
TWI311238B (enExample) 2009-06-21

Similar Documents

Publication Publication Date Title
CN100526983C (zh) 形成防反射膜的组合物
JP4399364B2 (ja) トリアジン化合物を含む反射防止組成物
JP5447832B2 (ja) 電子線リソグラフィー用レジスト下層膜形成組成物
JP4895049B2 (ja) ナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
US20040110096A1 (en) Composition for forming antireflection film for lithography
JP3852593B2 (ja) 反射防止膜形成組成物
JPWO2004034148A1 (ja) リソグラフィー用反射防止膜形成組成物
JP5029832B2 (ja) ビニルナフタレン樹脂誘導体を含有するリソグラフィー用塗布型下層膜形成組成物
JP4250939B2 (ja) 反射防止膜形成組成物
JP4214380B2 (ja) エポキシ化合物誘導体を含む反射防止膜形成組成物
JP4243825B2 (ja) リソグラフィー用反射防止膜形成組成物
JP4051538B2 (ja) リソグラフィー用反射防止膜形成組成物
CN101268419A (zh) 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物
JP4164638B2 (ja) 反射防止膜形成組成物
CN100547487C (zh) 光刻用形成防反射膜的组合物
JP4207115B2 (ja) リン系有機基含有高分子を含む反射防止膜形成組成物
JP2002333717A (ja) リソグラフィー用反射防止膜形成組成物
JP2005321752A (ja) イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物
JP4438931B2 (ja) フォトレジストパターンの形成方法
CN103838086B (zh) 含有异氰脲酸化合物与苯甲酸化合物的反应生成物的形成防反射膜的组合物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090812

Termination date: 20170214

CF01 Termination of patent right due to non-payment of annual fee