KR100949343B1 - 반사방지막 형성 조성물 - Google Patents

반사방지막 형성 조성물 Download PDF

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Publication number
KR100949343B1
KR100949343B1 KR1020047012936A KR20047012936A KR100949343B1 KR 100949343 B1 KR100949343 B1 KR 100949343B1 KR 1020047012936 A KR1020047012936 A KR 1020047012936A KR 20047012936 A KR20047012936 A KR 20047012936A KR 100949343 B1 KR100949343 B1 KR 100949343B1
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KR
South Korea
Prior art keywords
antireflection film
forming composition
mass
polymer compound
crosslinking
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Expired - Lifetime
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KR1020047012936A
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English (en)
Korean (ko)
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KR20040091066A (ko
Inventor
사카모토리키마루
미즈사와켄이치
Original Assignee
닛산 가가쿠 고교 가부시키 가이샤
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Publication of KR20040091066A publication Critical patent/KR20040091066A/ko
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Publication of KR100949343B1 publication Critical patent/KR100949343B1/ko
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Paints Or Removers (AREA)
KR1020047012936A 2002-02-19 2003-02-14 반사방지막 형성 조성물 Expired - Lifetime KR100949343B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002041482 2002-02-19
JPJP-P-2002-00041482 2002-02-19
JPJP-P-2002-00167343 2002-06-07
JP2002167343 2002-06-07
PCT/JP2003/001542 WO2003071357A1 (en) 2002-02-19 2003-02-14 Composition for forming anti-reflection coating

Publications (2)

Publication Number Publication Date
KR20040091066A KR20040091066A (ko) 2004-10-27
KR100949343B1 true KR100949343B1 (ko) 2010-03-26

Family

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Family Applications (1)

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KR1020047012936A Expired - Lifetime KR100949343B1 (ko) 2002-02-19 2003-02-14 반사방지막 형성 조성물

Country Status (7)

Country Link
US (1) US7309560B2 (enExample)
EP (1) EP1484645A4 (enExample)
JP (1) JP4038688B2 (enExample)
KR (1) KR100949343B1 (enExample)
CN (1) CN100526983C (enExample)
TW (1) TW200303455A (enExample)
WO (1) WO2003071357A1 (enExample)

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US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
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US7122482B2 (en) * 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
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US20060062922A1 (en) 2004-09-23 2006-03-23 Molecular Imprints, Inc. Polymerization technique to attenuate oxygen inhibition of solidification of liquids and composition therefor
US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
US7189640B2 (en) * 2004-12-02 2007-03-13 United Microelectronics Corp. Method of forming damascene structures
JP4595606B2 (ja) * 2005-03-17 2010-12-08 Jsr株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7375172B2 (en) 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
JP5014822B2 (ja) * 2006-02-13 2012-08-29 Hoya株式会社 マスクブランク用レジスト下層膜形成組成物、マスクブランク及びマスク
US7563563B2 (en) * 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
US7651830B2 (en) * 2007-06-01 2010-01-26 3M Innovative Properties Company Patterned photoacid etching and articles therefrom
US20090101203A1 (en) * 2007-10-23 2009-04-23 Guardian Industries Corp. Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same
CN101946209B (zh) * 2008-02-18 2014-01-22 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
CN104749887A (zh) * 2009-04-21 2015-07-01 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
US8617641B2 (en) * 2009-11-12 2013-12-31 Guardian Industries Corp. Coated article comprising colloidal silica inclusive anti-reflective coating, and method of making the same
CN103415809B (zh) * 2011-03-15 2017-03-15 日产化学工业株式会社 形成抗蚀剂下层膜的组合物及使用该组合物的抗蚀剂图案的形成方法
CN107735729B (zh) 2015-07-02 2021-09-28 日产化学工业株式会社 包含具有长链烷基的环氧基加成体的抗蚀剂下层膜形成用组合物
JP7255487B2 (ja) * 2017-09-22 2023-04-11 日産化学株式会社 レジスト下層膜形成組成物
KR102400604B1 (ko) * 2019-04-23 2022-05-19 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
JPWO2021157551A1 (enExample) * 2020-02-06 2021-08-12
CN113621278B (zh) * 2021-08-30 2022-05-27 厦门恒坤新材料科技股份有限公司 一种与光刻胶配合使用的底部抗反射涂料组合物及光刻胶浮雕图像形成方法
CN116009355A (zh) * 2023-01-18 2023-04-25 上海英迈特材料科技有限公司 双色紫外吸收染料结构、双色光刻抗反射涂层及制备方法

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JPH10221855A (ja) * 1997-02-06 1998-08-21 Fuji Photo Film Co Ltd 反射防止膜材料組成物及びそれを用いたレジストパターン形成方法
JPH10239837A (ja) * 1997-02-28 1998-09-11 Fuji Photo Film Co Ltd 反射防止膜材料組成物及びそれを利用したレジストパターン形成方法
JP2002296789A (ja) 2001-03-29 2002-10-09 Jsr Corp 多層レジストプロセス用下層膜形成組成物
JP2003064534A (ja) 2001-06-14 2003-03-05 National Institute Of Advanced Industrial & Technology 金属酸化物短繊維の製造方法

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JP2003064534A (ja) 2001-06-14 2003-03-05 National Institute Of Advanced Industrial & Technology 金属酸化物短繊維の製造方法

Also Published As

Publication number Publication date
EP1484645A1 (en) 2004-12-08
CN1636166A (zh) 2005-07-06
TW200303455A (en) 2003-09-01
CN100526983C (zh) 2009-08-12
JP4038688B2 (ja) 2008-01-30
WO2003071357A1 (en) 2003-08-28
KR20040091066A (ko) 2004-10-27
US20050118749A1 (en) 2005-06-02
US7309560B2 (en) 2007-12-18
EP1484645A4 (en) 2008-12-17
JPWO2003071357A1 (ja) 2005-06-16
TWI311238B (enExample) 2009-06-21

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