JP4038688B2 - 反射防止膜形成組成物 - Google Patents

反射防止膜形成組成物 Download PDF

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Publication number
JP4038688B2
JP4038688B2 JP2003570188A JP2003570188A JP4038688B2 JP 4038688 B2 JP4038688 B2 JP 4038688B2 JP 2003570188 A JP2003570188 A JP 2003570188A JP 2003570188 A JP2003570188 A JP 2003570188A JP 4038688 B2 JP4038688 B2 JP 4038688B2
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JP
Japan
Prior art keywords
antireflection film
forming
mass
composition
polymer compound
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2003570188A
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English (en)
Japanese (ja)
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JPWO2003071357A1 (ja
Inventor
力丸 坂本
水沢　　賢一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
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Nissan Chemical Corp
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Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Publication of JPWO2003071357A1 publication Critical patent/JPWO2003071357A1/ja
Application granted granted Critical
Publication of JP4038688B2 publication Critical patent/JP4038688B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Paints Or Removers (AREA)
JP2003570188A 2002-02-19 2003-02-14 反射防止膜形成組成物 Expired - Lifetime JP4038688B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002041482 2002-02-19
JP2002041482 2002-02-19
JP2002167343 2002-06-07
JP2002167343 2002-06-07
PCT/JP2003/001542 WO2003071357A1 (en) 2002-02-19 2003-02-14 Composition for forming anti-reflection coating

Publications (2)

Publication Number Publication Date
JPWO2003071357A1 JPWO2003071357A1 (ja) 2005-06-16
JP4038688B2 true JP4038688B2 (ja) 2008-01-30

Family

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Family Applications (1)

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JP2003570188A Expired - Lifetime JP4038688B2 (ja) 2002-02-19 2003-02-14 反射防止膜形成組成物

Country Status (7)

Country Link
US (1) US7309560B2 (enExample)
EP (1) EP1484645A4 (enExample)
JP (1) JP4038688B2 (enExample)
KR (1) KR100949343B1 (enExample)
CN (1) CN100526983C (enExample)
TW (1) TW200303455A (enExample)
WO (1) WO2003071357A1 (enExample)

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US7307118B2 (en) * 2004-11-24 2007-12-11 Molecular Imprints, Inc. Composition to reduce adhesion between a conformable region and a mold
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US7122482B2 (en) * 2003-10-27 2006-10-17 Molecular Imprints, Inc. Methods for fabricating patterned features utilizing imprint lithography
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7501229B2 (en) 2004-03-16 2009-03-10 Nissan Chemical Industries, Ltd. Anti-reflective coating containing sulfur atom
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US20060081557A1 (en) * 2004-10-18 2006-04-20 Molecular Imprints, Inc. Low-k dielectric functional imprinting materials
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JP4595606B2 (ja) * 2005-03-17 2010-12-08 Ｊｓｒ株式会社 反射防止膜形成用組成物、積層体およびレジストパターンの形成方法
JP4575220B2 (ja) * 2005-04-14 2010-11-04 信越化学工業株式会社 レジスト下層膜材料およびパターン形成方法
US7375172B2 (en) 2005-07-06 2008-05-20 International Business Machines Corporation Underlayer compositions containing heterocyclic aromatic structures
US7759407B2 (en) 2005-07-22 2010-07-20 Molecular Imprints, Inc. Composition for adhering materials together
US8557351B2 (en) * 2005-07-22 2013-10-15 Molecular Imprints, Inc. Method for adhering materials together
US8808808B2 (en) 2005-07-22 2014-08-19 Molecular Imprints, Inc. Method for imprint lithography utilizing an adhesion primer layer
US7736822B2 (en) * 2006-02-13 2010-06-15 Hoya Corporation Resist underlayer coating forming composition for mask blank, mask blank and mask
JP5014822B2 (ja) * 2006-02-13 2012-08-29 Ｈｏｙａ株式会社 マスクブランク用レジスト下層膜形成組成物、マスクブランク及びマスク
US7563563B2 (en) * 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
WO2008105266A1 (ja) * 2007-02-27 2008-09-04 Nissan Chemical Industries, Ltd. 電子線リソグラフィー用レジスト下層膜形成組成物
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US20090101203A1 (en) * 2007-10-23 2009-04-23 Guardian Industries Corp. Method of making an antireflective silica coating, resulting product, and photovoltaic device comprising same
CN101946209B (zh) * 2008-02-18 2014-01-22 日产化学工业株式会社 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物
CN104749887A (zh) * 2009-04-21 2015-07-01 日产化学工业株式会社 Euv光刻用抗蚀剂下层膜形成用组合物
US8617641B2 (en) * 2009-11-12 2013-12-31 Guardian Industries Corp. Coated article comprising colloidal silica inclusive anti-reflective coating, and method of making the same
CN103415809B (zh) * 2011-03-15 2017-03-15 日产化学工业株式会社 形成抗蚀剂下层膜的组合物及使用该组合物的抗蚀剂图案的形成方法
CN107735729B (zh) 2015-07-02 2021-09-28 日产化学工业株式会社 包含具有长链烷基的环氧基加成体的抗蚀剂下层膜形成用组合物
JP7255487B2 (ja) * 2017-09-22 2023-04-11 日産化学株式会社 レジスト下層膜形成組成物
KR102400604B1 (ko) * 2019-04-23 2022-05-19 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
TWI837443B (zh) * 2019-12-31 2024-04-01 南韓商羅門哈斯電子材料韓國公司 塗料組成物、經塗覆的基底及形成電子裝置的方法
JPWO2021157551A1 (enExample) * 2020-02-06 2021-08-12
CN113621278B (zh) * 2021-08-30 2022-05-27 厦门恒坤新材料科技股份有限公司 一种与光刻胶配合使用的底部抗反射涂料组合物及光刻胶浮雕图像形成方法
CN116009355A (zh) * 2023-01-18 2023-04-25 上海英迈特材料科技有限公司 双色紫外吸收染料结构、双色光刻抗反射涂层及制备方法

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Also Published As

Publication number Publication date
EP1484645A1 (en) 2004-12-08
CN1636166A (zh) 2005-07-06
TW200303455A (en) 2003-09-01
CN100526983C (zh) 2009-08-12
WO2003071357A1 (en) 2003-08-28
KR20040091066A (ko) 2004-10-27
US20050118749A1 (en) 2005-06-02
US7309560B2 (en) 2007-12-18
KR100949343B1 (ko) 2010-03-26
EP1484645A4 (en) 2008-12-17
JPWO2003071357A1 (ja) 2005-06-16
TWI311238B (enExample) 2009-06-21

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