CN100501865C - 磁存储器 - Google Patents

磁存储器 Download PDF

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Publication number
CN100501865C
CN100501865C CNB021516537A CN02151653A CN100501865C CN 100501865 C CN100501865 C CN 100501865C CN B021516537 A CNB021516537 A CN B021516537A CN 02151653 A CN02151653 A CN 02151653A CN 100501865 C CN100501865 C CN 100501865C
Authority
CN
China
Prior art keywords
mentioned
magneto
distribution
resistance effect
effect element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021516537A
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English (en)
Chinese (zh)
Other versions
CN1452175A (zh
Inventor
齐藤好昭
與田博明
浅尾吉昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of CN1452175A publication Critical patent/CN1452175A/zh
Application granted granted Critical
Publication of CN100501865C publication Critical patent/CN100501865C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CNB021516537A 2001-12-28 2002-12-27 磁存储器 Expired - Fee Related CN100501865C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP401342/2001 2001-12-28
JP2001401342 2001-12-28
JP286653/2002 2002-09-30
JP2002286653A JP4040414B2 (ja) 2001-12-28 2002-09-30 磁気メモリ

Publications (2)

Publication Number Publication Date
CN1452175A CN1452175A (zh) 2003-10-29
CN100501865C true CN100501865C (zh) 2009-06-17

Family

ID=27667392

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021516537A Expired - Fee Related CN100501865C (zh) 2001-12-28 2002-12-27 磁存储器

Country Status (5)

Country Link
US (1) US6781872B2 (ja)
JP (1) JP4040414B2 (ja)
KR (1) KR100533301B1 (ja)
CN (1) CN100501865C (ja)
TW (1) TW588353B (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151262A (ja) * 2001-11-15 2003-05-23 Toshiba Corp 磁気ランダムアクセスメモリ
JP2004128015A (ja) * 2002-09-30 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
JP2004259978A (ja) * 2003-02-26 2004-09-16 Toshiba Corp 磁気記憶装置
JP2005150156A (ja) * 2003-11-11 2005-06-09 Toshiba Corp 磁気記憶装置
US7242045B2 (en) * 2004-02-19 2007-07-10 Grandis, Inc. Spin transfer magnetic element having low saturation magnetization free layers
JP2005260175A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
JP2005260174A (ja) * 2004-03-15 2005-09-22 Sony Corp 磁気メモリ及びその記録方法
KR100612854B1 (ko) * 2004-07-31 2006-08-21 삼성전자주식회사 스핀차지를 이용한 자성막 구조체와 그 제조 방법과 그를구비하는 반도체 장치 및 이 장치의 동작방법
JP4575181B2 (ja) * 2005-01-28 2010-11-04 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
JP2006269885A (ja) * 2005-03-25 2006-10-05 Sony Corp スピン注入型磁気抵抗効果素子
JP4557841B2 (ja) * 2005-08-30 2010-10-06 株式会社東芝 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリのデータ書き込み方法、および、磁気ランダムアクセスメモリの製造方法
JP2007281247A (ja) * 2006-04-07 2007-10-25 Toshiba Corp スピンメモリ
US7349243B2 (en) * 2006-04-20 2008-03-25 Taiwan Semiconductor Manufacturing Company, Ltd. 3-parameter switching technique for use in MRAM memory arrays
US8120949B2 (en) * 2006-04-27 2012-02-21 Avalanche Technology, Inc. Low-cost non-volatile flash-RAM memory
JP4800123B2 (ja) * 2006-06-27 2011-10-26 シャープ株式会社 磁気半導体メモリ装置、およびこれを備える電子機器、並びに、その情報書込み読出し方法
US7982275B2 (en) * 2007-08-22 2011-07-19 Grandis Inc. Magnetic element having low saturation magnetization
TWI446604B (zh) * 2008-01-29 2014-07-21 Ulvac Inc 磁性元件之製造方法
JPWO2009110119A1 (ja) * 2008-03-06 2011-07-14 富士電機ホールディングス株式会社 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法
KR20170012798A (ko) * 2015-07-24 2017-02-03 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
WO2019005647A1 (en) 2017-06-27 2019-01-03 Western Digital Technologies, Inc. INTEGRATED DISCONNECTED CIRCUITS IN DATA STORAGE DEVICES
US10411184B1 (en) 2018-03-02 2019-09-10 Samsung Electronics Co., Ltd. Vertical spin orbit torque devices
JP2021044444A (ja) * 2019-09-12 2021-03-18 キオクシア株式会社 磁気記憶装置
CN111771282B (zh) * 2020-05-22 2021-08-03 长江存储科技有限责任公司 存储器件及其形成方法
KR20220098536A (ko) * 2021-01-04 2022-07-12 삼성전자주식회사 자기 메모리 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW411471B (en) 1997-09-17 2000-11-11 Siemens Ag Memory-cell device
DE19744095A1 (de) 1997-10-06 1999-04-15 Siemens Ag Speicherzellenanordnung
KR100451096B1 (ko) * 2000-09-19 2004-10-02 엔이씨 일렉트로닉스 가부시키가이샤 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치
US6700813B2 (en) * 2001-04-03 2004-03-02 Canon Kabushiki Kaisha Magnetic memory and driving method therefor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5640343A (en) * 1996-03-18 1997-06-17 International Business Machines Corporation Magnetic memory array using magnetic tunnel junction devices in the memory cells
US5734605A (en) * 1996-09-10 1998-03-31 Motorola, Inc. Multi-layer magnetic tunneling junction memory cells

Also Published As

Publication number Publication date
KR100533301B1 (ko) 2005-12-05
KR20030057468A (ko) 2003-07-04
US20030147289A1 (en) 2003-08-07
TW588353B (en) 2004-05-21
CN1452175A (zh) 2003-10-29
JP4040414B2 (ja) 2008-01-30
US6781872B2 (en) 2004-08-24
TW200303020A (en) 2003-08-16
JP2003258208A (ja) 2003-09-12

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C06 Publication
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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090617

Termination date: 20121227