CN100501865C - 磁存储器 - Google Patents
磁存储器 Download PDFInfo
- Publication number
- CN100501865C CN100501865C CNB021516537A CN02151653A CN100501865C CN 100501865 C CN100501865 C CN 100501865C CN B021516537 A CNB021516537 A CN B021516537A CN 02151653 A CN02151653 A CN 02151653A CN 100501865 C CN100501865 C CN 100501865C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- magneto
- distribution
- resistance effect
- effect element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
- Mram Or Spin Memory Techniques (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP401342/2001 | 2001-12-28 | ||
JP2001401342 | 2001-12-28 | ||
JP286653/2002 | 2002-09-30 | ||
JP2002286653A JP4040414B2 (ja) | 2001-12-28 | 2002-09-30 | 磁気メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1452175A CN1452175A (zh) | 2003-10-29 |
CN100501865C true CN100501865C (zh) | 2009-06-17 |
Family
ID=27667392
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB021516537A Expired - Fee Related CN100501865C (zh) | 2001-12-28 | 2002-12-27 | 磁存储器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6781872B2 (ja) |
JP (1) | JP4040414B2 (ja) |
KR (1) | KR100533301B1 (ja) |
CN (1) | CN100501865C (ja) |
TW (1) | TW588353B (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003151262A (ja) * | 2001-11-15 | 2003-05-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
JP2004128015A (ja) * | 2002-09-30 | 2004-04-22 | Sony Corp | 磁気抵抗効果素子および磁気メモリ装置 |
JP2004259978A (ja) * | 2003-02-26 | 2004-09-16 | Toshiba Corp | 磁気記憶装置 |
JP2005150156A (ja) * | 2003-11-11 | 2005-06-09 | Toshiba Corp | 磁気記憶装置 |
US7242045B2 (en) * | 2004-02-19 | 2007-07-10 | Grandis, Inc. | Spin transfer magnetic element having low saturation magnetization free layers |
JP2005260175A (ja) * | 2004-03-15 | 2005-09-22 | Sony Corp | 磁気メモリ及びその記録方法 |
JP2005260174A (ja) * | 2004-03-15 | 2005-09-22 | Sony Corp | 磁気メモリ及びその記録方法 |
KR100612854B1 (ko) * | 2004-07-31 | 2006-08-21 | 삼성전자주식회사 | 스핀차지를 이용한 자성막 구조체와 그 제조 방법과 그를구비하는 반도체 장치 및 이 장치의 동작방법 |
JP4575181B2 (ja) * | 2005-01-28 | 2010-11-04 | 株式会社東芝 | スピン注入磁気ランダムアクセスメモリ |
JP2006269885A (ja) * | 2005-03-25 | 2006-10-05 | Sony Corp | スピン注入型磁気抵抗効果素子 |
JP4557841B2 (ja) * | 2005-08-30 | 2010-10-06 | 株式会社東芝 | 磁気ランダムアクセスメモリ、磁気ランダムアクセスメモリのデータ書き込み方法、および、磁気ランダムアクセスメモリの製造方法 |
JP2007281247A (ja) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | スピンメモリ |
US7349243B2 (en) * | 2006-04-20 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3-parameter switching technique for use in MRAM memory arrays |
US8120949B2 (en) * | 2006-04-27 | 2012-02-21 | Avalanche Technology, Inc. | Low-cost non-volatile flash-RAM memory |
JP4800123B2 (ja) * | 2006-06-27 | 2011-10-26 | シャープ株式会社 | 磁気半導体メモリ装置、およびこれを備える電子機器、並びに、その情報書込み読出し方法 |
US7982275B2 (en) * | 2007-08-22 | 2011-07-19 | Grandis Inc. | Magnetic element having low saturation magnetization |
TWI446604B (zh) * | 2008-01-29 | 2014-07-21 | Ulvac Inc | 磁性元件之製造方法 |
JPWO2009110119A1 (ja) * | 2008-03-06 | 2011-07-14 | 富士電機ホールディングス株式会社 | 強磁性トンネル接合素子および強磁性トンネル接合素子の駆動方法 |
KR20170012798A (ko) * | 2015-07-24 | 2017-02-03 | 에스케이하이닉스 주식회사 | 전자 장치 및 그 제조 방법 |
WO2019005647A1 (en) | 2017-06-27 | 2019-01-03 | Western Digital Technologies, Inc. | INTEGRATED DISCONNECTED CIRCUITS IN DATA STORAGE DEVICES |
US10411184B1 (en) | 2018-03-02 | 2019-09-10 | Samsung Electronics Co., Ltd. | Vertical spin orbit torque devices |
JP2021044444A (ja) * | 2019-09-12 | 2021-03-18 | キオクシア株式会社 | 磁気記憶装置 |
CN111771282B (zh) * | 2020-05-22 | 2021-08-03 | 长江存储科技有限责任公司 | 存储器件及其形成方法 |
KR20220098536A (ko) * | 2021-01-04 | 2022-07-12 | 삼성전자주식회사 | 자기 메모리 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW411471B (en) | 1997-09-17 | 2000-11-11 | Siemens Ag | Memory-cell device |
DE19744095A1 (de) | 1997-10-06 | 1999-04-15 | Siemens Ag | Speicherzellenanordnung |
KR100451096B1 (ko) * | 2000-09-19 | 2004-10-02 | 엔이씨 일렉트로닉스 가부시키가이샤 | 자기메모리셀어레이를 갖는 비휘발성 반도체메모리장치 |
US6700813B2 (en) * | 2001-04-03 | 2004-03-02 | Canon Kabushiki Kaisha | Magnetic memory and driving method therefor |
-
2002
- 2002-09-30 JP JP2002286653A patent/JP4040414B2/ja not_active Expired - Fee Related
- 2002-12-18 TW TW091136540A patent/TW588353B/zh active
- 2002-12-27 CN CNB021516537A patent/CN100501865C/zh not_active Expired - Fee Related
- 2002-12-27 KR KR10-2002-0085195A patent/KR100533301B1/ko not_active IP Right Cessation
- 2002-12-30 US US10/330,115 patent/US6781872B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5734605A (en) * | 1996-09-10 | 1998-03-31 | Motorola, Inc. | Multi-layer magnetic tunneling junction memory cells |
Also Published As
Publication number | Publication date |
---|---|
KR100533301B1 (ko) | 2005-12-05 |
KR20030057468A (ko) | 2003-07-04 |
US20030147289A1 (en) | 2003-08-07 |
TW588353B (en) | 2004-05-21 |
CN1452175A (zh) | 2003-10-29 |
JP4040414B2 (ja) | 2008-01-30 |
US6781872B2 (en) | 2004-08-24 |
TW200303020A (en) | 2003-08-16 |
JP2003258208A (ja) | 2003-09-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090617 Termination date: 20121227 |