CN100470794C - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN100470794C CN100470794C CNB2006100718031A CN200610071803A CN100470794C CN 100470794 C CN100470794 C CN 100470794C CN B2006100718031 A CNB2006100718031 A CN B2006100718031A CN 200610071803 A CN200610071803 A CN 200610071803A CN 100470794 C CN100470794 C CN 100470794C
- Authority
- CN
- China
- Prior art keywords
- semiconductor device
- fin
- semiconductor element
- heat conduction
- conduction material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 124
- 230000003746 surface roughness Effects 0.000 claims abstract description 35
- 229910045601 alloy Inorganic materials 0.000 claims description 41
- 239000000956 alloy Substances 0.000 claims description 41
- 229910000679 solder Inorganic materials 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 33
- 239000004411 aluminium Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 6
- 238000005422 blasting Methods 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000005855 radiation Effects 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 description 27
- 238000010168 coupling process Methods 0.000 description 27
- 238000005859 coupling reaction Methods 0.000 description 27
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000009736 wetting Methods 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16251—Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12389—All metal or with adjacent metals having variation in thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005367211 | 2005-12-20 | ||
JP2005367211A JP4764159B2 (ja) | 2005-12-20 | 2005-12-20 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1988149A CN1988149A (zh) | 2007-06-27 |
CN100470794C true CN100470794C (zh) | 2009-03-18 |
Family
ID=38173182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100718031A Expired - Fee Related CN100470794C (zh) | 2005-12-20 | 2006-03-16 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7813133B2 (zh) |
JP (1) | JP4764159B2 (zh) |
KR (1) | KR100824518B1 (zh) |
CN (1) | CN100470794C (zh) |
TW (1) | TWI320596B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
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US7915081B2 (en) * | 2006-03-31 | 2011-03-29 | Intel Corporation | Flexible interconnect pattern on semiconductor package |
TW200830488A (en) * | 2007-01-10 | 2008-07-16 | Siliconware Precision Industries Co Ltd | Heat-dissipating semiconductor package |
US8362607B2 (en) * | 2009-06-03 | 2013-01-29 | Honeywell International Inc. | Integrated circuit package including a thermally and electrically conductive package lid |
JP5447175B2 (ja) | 2010-05-17 | 2014-03-19 | 富士通セミコンダクター株式会社 | 半導体装置 |
US8617926B2 (en) * | 2010-09-09 | 2013-12-31 | Advanced Micro Devices, Inc. | Semiconductor chip device with polymeric filler trench |
JP5573645B2 (ja) * | 2010-12-15 | 2014-08-20 | 富士通セミコンダクター株式会社 | 半導体装置及び半導体装置の製造方法 |
DE102011004171A1 (de) * | 2011-02-15 | 2012-08-16 | Brose Fahrzeugteile GmbH & Co. Kommanditgesellschaft, Würzburg | Temperierelement und Verfahren zur Befestigung eines Elektrobauteils an dem Temperierelement |
JP2013115083A (ja) * | 2011-11-25 | 2013-06-10 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP6036083B2 (ja) * | 2012-09-21 | 2016-11-30 | 株式会社ソシオネクスト | 半導体装置及びその製造方法並びに電子装置及びその製造方法 |
US9245804B2 (en) * | 2012-10-23 | 2016-01-26 | Nxp B.V. | Using a double-cut for mechanical protection of a wafer-level chip scale package (WLCSP) |
JP5708613B2 (ja) * | 2012-11-01 | 2015-04-30 | 株式会社豊田自動織機 | モジュール |
KR20140115668A (ko) | 2013-03-21 | 2014-10-01 | 삼성전자주식회사 | 방열판과 수동 소자를 갖는 반도체 패키지 |
US9799626B2 (en) * | 2014-09-15 | 2017-10-24 | Invensas Corporation | Semiconductor packages and other circuit modules with porous and non-porous stabilizing layers |
US9560737B2 (en) * | 2015-03-04 | 2017-01-31 | International Business Machines Corporation | Electronic package with heat transfer element(s) |
US10175064B2 (en) | 2015-09-25 | 2019-01-08 | International Business Machines Corporation | Circuit boards and electronic packages with embedded tamper-respondent sensor |
US9911012B2 (en) | 2015-09-25 | 2018-03-06 | International Business Machines Corporation | Overlapping, discrete tamper-respondent sensors |
US10022896B2 (en) * | 2015-11-23 | 2018-07-17 | The Boeing Company | Controlling the heating of a composite part |
US9916744B2 (en) | 2016-02-25 | 2018-03-13 | International Business Machines Corporation | Multi-layer stack with embedded tamper-detect protection |
US9881880B2 (en) | 2016-05-13 | 2018-01-30 | International Business Machines Corporation | Tamper-proof electronic packages with stressed glass component substrate(s) |
US10299372B2 (en) | 2016-09-26 | 2019-05-21 | International Business Machines Corporation | Vented tamper-respondent assemblies |
DE102016222631A1 (de) * | 2016-11-17 | 2018-05-17 | Zf Friedrichshafen Ag | Leiterplattenanordnung mit einem elektrischen Bauteil und einem Kühlkörper |
US10306753B1 (en) | 2018-02-22 | 2019-05-28 | International Business Machines Corporation | Enclosure-to-board interface with tamper-detect circuit(s) |
US11791237B2 (en) | 2018-06-27 | 2023-10-17 | Intel Corporation | Microelectronic assemblies including a thermal interface material |
US11682605B2 (en) * | 2019-05-28 | 2023-06-20 | Intel Corporation | Integrated circuit packages with asymmetric adhesion material regions |
KR20220018645A (ko) * | 2020-08-07 | 2022-02-15 | 삼성전기주식회사 | 전자 소자 모듈 |
Family Cites Families (38)
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IT1252704B (it) * | 1991-12-20 | 1995-06-26 | Sgs Thomson Microelectronics | Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazione |
US5396403A (en) * | 1993-07-06 | 1995-03-07 | Hewlett-Packard Company | Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate |
KR970010673B1 (ko) * | 1994-03-24 | 1997-06-30 | 아남산업 주식회사 | 반도체용 방열판 표면구조 |
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TW350194B (en) * | 1994-11-30 | 1999-01-11 | Mitsubishi Gas Chemical Co | Metal-foil-clad composite ceramic board and process for the production thereof the invention relates to the metal-foil-clad composite ceramic board and process for the production |
KR0142591B1 (ko) * | 1995-08-01 | 1998-07-01 | 정병천 | 합성수지재 볼을 이용한 수면상에서의 열에너지 보존율 및 폐수정화처리효과 극대화 방법 |
JPH09306954A (ja) * | 1996-05-20 | 1997-11-28 | Hitachi Ltd | 半導体装置及びその実装方法並びに実装構造体 |
JPH1060617A (ja) * | 1996-08-22 | 1998-03-03 | Suruzaa Meteko Japan Kk | 高速フレーム溶射方法 |
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JP3039488B2 (ja) | 1997-11-21 | 2000-05-08 | 日本電気株式会社 | 半導体装置 |
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JPH11307356A (ja) * | 1998-04-23 | 1999-11-05 | Tokin Corp | フープ端子及び変成器 |
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JP2000114413A (ja) * | 1998-09-29 | 2000-04-21 | Sony Corp | 半導体装置、その製造方法および部品の実装方法 |
US6876075B2 (en) * | 2000-03-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Aluminum-silicon carbide semiconductor substrate and method for producing the same |
US6292369B1 (en) * | 2000-08-07 | 2001-09-18 | International Business Machines Corporation | Methods for customizing lid for improved thermal performance of modules using flip chips |
US6407922B1 (en) * | 2000-09-29 | 2002-06-18 | Intel Corporation | Heat spreader, electronic package including the heat spreader, and methods of manufacturing the heat spreader |
JP2002217365A (ja) * | 2001-01-23 | 2002-08-02 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP3818102B2 (ja) * | 2001-08-31 | 2006-09-06 | 住友電気工業株式会社 | 放熱基板とその製造方法及び半導体装置 |
US6617683B2 (en) * | 2001-09-28 | 2003-09-09 | Intel Corporation | Thermal performance in flip chip/integral heat spreader packages using low modulus thermal interface material |
KR100447867B1 (ko) * | 2001-10-05 | 2004-09-08 | 삼성전자주식회사 | 반도체 패키지 |
JP3836010B2 (ja) | 2001-10-19 | 2006-10-18 | 三菱電機株式会社 | 半導体装置 |
KR100446290B1 (ko) * | 2001-11-03 | 2004-09-01 | 삼성전자주식회사 | 댐을 포함하는 반도체 패키지 및 그 제조방법 |
US6665187B1 (en) * | 2002-07-16 | 2003-12-16 | International Business Machines Corporation | Thermally enhanced lid for multichip modules |
US6936919B2 (en) * | 2002-08-21 | 2005-08-30 | Texas Instruments Incorporated | Heatsink-substrate-spacer structure for an integrated-circuit package |
JP3934565B2 (ja) * | 2003-02-21 | 2007-06-20 | 富士通株式会社 | 半導体装置 |
US7031162B2 (en) * | 2003-09-26 | 2006-04-18 | International Business Machines Corporation | Method and structure for cooling a dual chip module with one high power chip |
US7180745B2 (en) * | 2003-10-10 | 2007-02-20 | Delphi Technologies, Inc. | Flip chip heat sink package and method |
JP4086774B2 (ja) * | 2003-12-25 | 2008-05-14 | 三菱電機株式会社 | 半導体装置 |
US20060160373A1 (en) * | 2005-01-14 | 2006-07-20 | Cabot Corporation | Processes for planarizing substrates and encapsulating printable electronic features |
US7310233B2 (en) * | 2005-01-28 | 2007-12-18 | Tyco Electronics Power Systems | Apparatus and method for transferring heat from an electrical module |
-
2005
- 2005-12-20 JP JP2005367211A patent/JP4764159B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-23 US US11/359,996 patent/US7813133B2/en not_active Expired - Fee Related
- 2006-02-24 TW TW095106344A patent/TWI320596B/zh not_active IP Right Cessation
- 2006-03-13 KR KR1020060023270A patent/KR100824518B1/ko not_active IP Right Cessation
- 2006-03-16 CN CNB2006100718031A patent/CN100470794C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN1988149A (zh) | 2007-06-27 |
TWI320596B (en) | 2010-02-11 |
US20070139892A1 (en) | 2007-06-21 |
JP2007173416A (ja) | 2007-07-05 |
JP4764159B2 (ja) | 2011-08-31 |
TW200725870A (en) | 2007-07-01 |
KR20070065763A (ko) | 2007-06-25 |
US7813133B2 (en) | 2010-10-12 |
KR100824518B1 (ko) | 2008-04-22 |
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