IT1252704B - Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazione - Google Patents
Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazioneInfo
- Publication number
- IT1252704B IT1252704B ITMI913441A ITMI913441A IT1252704B IT 1252704 B IT1252704 B IT 1252704B IT MI913441 A ITMI913441 A IT MI913441A IT MI913441 A ITMI913441 A IT MI913441A IT 1252704 B IT1252704 B IT 1252704B
- Authority
- IT
- Italy
- Prior art keywords
- plastic body
- dissipator
- metallic
- procedure
- manufacture
- Prior art date
Links
- 229920003023 plastic Polymers 0.000 title abstract 3
- 239000004033 plastic Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000002184 metal Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
E' descritta una struttura comprendente una lastrina metallica (12), una piastrina di materiale semiconduttore, o "chip", (13) fissata sulla lastrina (12), reofori terminali (11), fili di interconnessiorie (18) tra reofori (11) e aree metallizzate (17) del "chip" (13) e un corpo di materia plastica (10) che ingloba il tutto ad eccezione di una superficie della lastrina (12) e di parte del reofori (11). Per ottenere una migliore aderenza tra plastica e metallo, aree prefissate (30, 32, 33) della lastrina (12) e dei reofori (11) presentano una rugosità superiore a 1 (Ra=1 um).
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI913441A IT1252704B (it) | 1991-12-20 | 1991-12-20 | Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazione |
EP92118079A EP0548497A1 (en) | 1991-12-20 | 1992-10-22 | Plastic encapsulated semiconductor device incorporating a heat sink of metal having controlled roughness contact surfaces, and method of making the same |
JP4294882A JPH05243457A (ja) | 1991-12-20 | 1992-11-04 | 半導体素子構造および金属プレートの作製方法および電流伝達端子の作製方法 |
US07/995,747 US6002173A (en) | 1991-12-20 | 1992-12-21 | Semiconductor device package with metal-polymer joint of controlled roughness |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ITMI913441A IT1252704B (it) | 1991-12-20 | 1991-12-20 | Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazione |
Publications (3)
Publication Number | Publication Date |
---|---|
ITMI913441A0 ITMI913441A0 (it) | 1991-12-20 |
ITMI913441A1 ITMI913441A1 (it) | 1993-06-20 |
IT1252704B true IT1252704B (it) | 1995-06-26 |
Family
ID=11361403
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ITMI913441A IT1252704B (it) | 1991-12-20 | 1991-12-20 | Struttura di dispositivo a semiconduttore con dissipatore metallico e corpo in plastica avente superfici di contatto a rugosita' controllata e procedimento per la sua fabbricazione |
Country Status (4)
Country | Link |
---|---|
US (1) | US6002173A (it) |
EP (1) | EP0548497A1 (it) |
JP (1) | JPH05243457A (it) |
IT (1) | IT1252704B (it) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4430990C2 (de) * | 1994-08-31 | 2002-10-24 | Infineon Technologies Ag | Verfahren zur Reinigung der Rückseite eines Chips sowie der Oberfläche von nach außen freiliegenden Teilen der aus dem Chip und einem Träger bestehenden Anordnung |
SG114453A1 (en) * | 1994-12-16 | 2005-09-28 | Seiko Epson Corp | Semiconductor device with a heat sink and method of producing the heat sink |
DE69427865T2 (de) * | 1994-12-16 | 2002-04-11 | Seiko Epson Corp., Tokio/Tokyo | Halbleiteranordnung mit einer Wärmesenke und Herstellungsverfahren der Wärmesenke |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
US5793613A (en) * | 1995-12-29 | 1998-08-11 | Sgs-Thomson Microelectronics S.R.1. | Heat-dissipating and supporting structure for a plastic package with a fully insulated heat sink for an electronic device |
EP0782184A1 (en) * | 1995-12-29 | 1997-07-02 | STMicroelectronics S.r.l. | Heat dissipating and supporting structure for a package |
US5987740A (en) * | 1996-10-22 | 1999-11-23 | Vlt Corporation | Laser machining of molded assemblies |
US6001672A (en) * | 1997-02-25 | 1999-12-14 | Micron Technology, Inc. | Method for transfer molding encapsulation of a semiconductor die with attached heat sink |
JP4030200B2 (ja) * | 1998-09-17 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体パッケージおよびその製造方法 |
EP0999591A1 (en) * | 1998-11-05 | 2000-05-10 | Texas Instruments Incorporated | Semiconductor package |
CN1178232C (zh) | 1999-04-26 | 2004-12-01 | 松下电器产业株式会社 | 电子零件及无线终端装置 |
US6483706B2 (en) | 2000-12-22 | 2002-11-19 | Vlt Corporation | Heat dissipation for electronic components |
US7220615B2 (en) | 2001-06-11 | 2007-05-22 | Micron Technology, Inc. | Alternative method used to package multimedia card by transfer molding |
US6444501B1 (en) * | 2001-06-12 | 2002-09-03 | Micron Technology, Inc. | Two stage transfer molding method to encapsulate MMC module |
US6989122B1 (en) * | 2002-10-17 | 2006-01-24 | National Semiconductor Corporation | Techniques for manufacturing flash-free contacts on a semiconductor package |
DE102005016830A1 (de) * | 2004-04-14 | 2005-11-03 | Denso Corp., Kariya | Halbleitervorrichtung und Verfahren zu ihrer Herstellung |
TWI270187B (en) * | 2005-12-19 | 2007-01-01 | Polytronics Technology Corp | Thermal conductive apparatus and manufacturing method thereof |
JP4764159B2 (ja) * | 2005-12-20 | 2011-08-31 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP4921016B2 (ja) * | 2006-03-31 | 2012-04-18 | ルネサスエレクトロニクス株式会社 | リードカット装置および半導体装置の製造方法 |
US20080198565A1 (en) * | 2007-02-16 | 2008-08-21 | Tyco Electronics Corporation | Surface mount foot with coined edge surface |
JP2011044570A (ja) * | 2009-08-20 | 2011-03-03 | Renesas Electronics Corp | 放熱板、半導体装置、および放熱板の製造方法 |
DE102010039729A1 (de) * | 2010-08-25 | 2012-03-01 | Robert Bosch Gmbh | Elektrische Schaltung mit zu kühlender Schaltungskomponente, Kühlkörper und Verfahren zur abgedichteten Einbettung einer elektrischen Schaltung |
US8546904B2 (en) * | 2011-07-11 | 2013-10-01 | Transcend Information, Inc. | Integrated circuit with temperature increasing element and electronic system having the same |
US20160071777A1 (en) * | 2013-03-28 | 2016-03-10 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor package and semiconductor device |
JP2016021469A (ja) * | 2014-07-14 | 2016-02-04 | 日立金属株式会社 | 伝送モジュール及びそれに用いられる回路基板 |
US20230352360A1 (en) * | 2022-04-29 | 2023-11-02 | Macom Technology Solutions Holdings, Inc. | Diamond-metal composite high power device packages |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52124865A (en) * | 1976-04-13 | 1977-10-20 | Sharp Corp | Semiconductor device |
JPS5796559A (en) * | 1980-12-09 | 1982-06-15 | Nec Corp | Semiconductor device |
JPS58153355A (ja) * | 1982-03-08 | 1983-09-12 | Toshiba Corp | 樹脂封止型半導体装置 |
JPS60231349A (ja) * | 1984-05-01 | 1985-11-16 | Toshiba Corp | リ−ドフレ−ム |
JPS6139554A (ja) * | 1984-07-31 | 1986-02-25 | Toshiba Corp | 樹脂封止型半導体装置 |
JPS6161445A (ja) * | 1984-08-31 | 1986-03-29 | Nec Kansai Ltd | 放熱板付リ−ドフレ−ムの製造方法 |
JPS60242649A (ja) * | 1985-03-29 | 1985-12-02 | Hitachi Ltd | 樹脂封止型半導体装置 |
JPS6254947A (ja) * | 1985-09-04 | 1987-03-10 | Hitachi Cable Ltd | リ−ドフレ−ム用金属条材 |
JPS63186454A (ja) * | 1987-01-28 | 1988-08-02 | Mitsubishi Electric Corp | 半導体装置用放熱板装置 |
JPS6467949A (en) * | 1987-09-08 | 1989-03-14 | Mitsui High Tec | Lead frame and manufacture thereof |
JPH01171257A (ja) * | 1987-12-25 | 1989-07-06 | Hitachi Chem Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPH0218952A (ja) * | 1988-07-07 | 1990-01-23 | Hitachi Chem Co Ltd | 樹脂封止半導体装置 |
US5041902A (en) * | 1989-12-14 | 1991-08-20 | Motorola, Inc. | Molded electronic package with compression structures |
US5278429A (en) * | 1989-12-19 | 1994-01-11 | Fujitsu Limited | Semiconductor device having improved adhesive structure and method of producing same |
JPH03234046A (ja) * | 1990-02-09 | 1991-10-18 | Ibiden Co Ltd | 半導体装置を構成するためのスラッグ |
JPH03241767A (ja) * | 1990-02-20 | 1991-10-28 | Matsushita Electric Ind Co Ltd | リードフレームの製造方法 |
JPH0629358A (ja) * | 1992-07-09 | 1994-02-04 | Fujitsu Ltd | 集積回路検査装置 |
MX9603136A (es) * | 1995-08-30 | 1997-03-29 | Carrier Corp | Sistema de aire acondicionado con serpentin subenfriador y serie de dispositivos de expansion. |
-
1991
- 1991-12-20 IT ITMI913441A patent/IT1252704B/it active IP Right Grant
-
1992
- 1992-10-22 EP EP92118079A patent/EP0548497A1/en not_active Withdrawn
- 1992-11-04 JP JP4294882A patent/JPH05243457A/ja active Pending
- 1992-12-21 US US07/995,747 patent/US6002173A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
ITMI913441A1 (it) | 1993-06-20 |
US6002173A (en) | 1999-12-14 |
JPH05243457A (ja) | 1993-09-21 |
ITMI913441A0 (it) | 1991-12-20 |
EP0548497A1 (en) | 1993-06-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19961227 |