DE3583053D1 - Halbleiterbauelemente. - Google Patents
Halbleiterbauelemente.Info
- Publication number
- DE3583053D1 DE3583053D1 DE8585301599T DE3583053T DE3583053D1 DE 3583053 D1 DE3583053 D1 DE 3583053D1 DE 8585301599 T DE8585301599 T DE 8585301599T DE 3583053 T DE3583053 T DE 3583053T DE 3583053 D1 DE3583053 D1 DE 3583053D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor portion
- elevated
- channel
- ridge
- semiconductor components
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB848406432A GB8406432D0 (en) | 1984-03-12 | 1984-03-12 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3583053D1 true DE3583053D1 (de) | 1991-07-11 |
Family
ID=10557944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8585301599T Expired - Lifetime DE3583053D1 (de) | 1984-03-12 | 1985-03-07 | Halbleiterbauelemente. |
Country Status (7)
Country | Link |
---|---|
US (2) | US4728628A (de) |
EP (1) | EP0156566B2 (de) |
JP (3) | JPH0710016B2 (de) |
AT (1) | ATE64244T1 (de) |
CA (1) | CA1228936A (de) |
DE (1) | DE3583053D1 (de) |
GB (1) | GB8406432D0 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2175442B (en) * | 1985-05-15 | 1989-05-24 | Stc Plc | Laser manufacture |
JPS62257783A (ja) * | 1986-04-30 | 1987-11-10 | Sharp Corp | 半導体レ−ザ素子 |
JPH02188729A (ja) * | 1989-01-17 | 1990-07-24 | Sharp Corp | 光学素子の回析格子製造方法 |
GB2228617A (en) * | 1989-02-27 | 1990-08-29 | Philips Electronic Associated | A method of manufacturing a semiconductor device having a mesa structure |
GB8907304D0 (en) * | 1989-03-31 | 1989-05-17 | British Telecomm | Distributed feedback lasers |
US5069561A (en) * | 1990-07-24 | 1991-12-03 | Gte Laboratories Incorporated | Monolithically integrated ridge waveguide semiconductor optical preamplifier |
JPH04162689A (ja) * | 1990-10-26 | 1992-06-08 | Mitsubishi Electric Corp | 半導体発光装置の製造方法 |
JP2754957B2 (ja) * | 1991-07-10 | 1998-05-20 | 日本電気株式会社 | 半導体光制御素子およびその製造方法 |
US5317588A (en) * | 1992-11-05 | 1994-05-31 | Eastman Kodak Company | Ridge waveguide distributed-feedback laser diode with a depressed-index cladding layer |
US5307357A (en) * | 1992-11-05 | 1994-04-26 | International Business Machines Corporation | Protection means for ridge waveguide laser structures using thick organic films |
US5311539A (en) * | 1992-11-25 | 1994-05-10 | International Business Machines Corporation | Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation |
US5305340A (en) * | 1992-12-16 | 1994-04-19 | International Business Machines Corporation | Waveguide ridge laser device with improved mounting and ridge protection |
US5434943A (en) * | 1993-11-03 | 1995-07-18 | At&T Corp. | Nanosecond fast electrically tunable Fabry-Perot filter |
DE19502684A1 (de) * | 1995-01-28 | 1996-08-01 | Sel Alcatel Ag | Verfahren zur Herstellung von Mehrsegment-Rippenwellenleitern |
JP3728332B2 (ja) * | 1995-04-24 | 2005-12-21 | シャープ株式会社 | 化合物半導体発光素子 |
JP3977920B2 (ja) * | 1998-05-13 | 2007-09-19 | 富士通株式会社 | 半導体装置の製造方法 |
JP3434706B2 (ja) | 1998-05-21 | 2003-08-11 | 富士写真フイルム株式会社 | 半導体レーザおよびその製造方法 |
US6365968B1 (en) | 1998-08-07 | 2002-04-02 | Corning Lasertron, Inc. | Polyimide/silicon oxide bi-layer for bond pad parasitic capacitance control in semiconductor electro-optical device |
DE29815522U1 (de) * | 1998-08-31 | 1998-12-03 | Forchel Alfred Prof Dr | Halbleiterlaser mit Gitterstruktur |
US6647046B1 (en) * | 1999-11-23 | 2003-11-11 | Corning Lasertron, Inc. | Mode-selective facet layer for pump laser |
CN1411622A (zh) * | 1999-12-20 | 2003-04-16 | 康宁激光子股份有限公司 | 宽脊泵激光器 |
US6375364B1 (en) | 2000-01-06 | 2002-04-23 | Corning Lasertron, Inc. | Back facet flared ridge for pump laser |
TW443019B (en) * | 2000-02-18 | 2001-06-23 | Ind Tech Res Inst | Self-aligned manufacturing method and the structure of ridge-waveguide semiconductor laser |
JP4008180B2 (ja) * | 2000-03-29 | 2007-11-14 | パイオニア株式会社 | 分布帰還リッジ型半導体レーザ |
EP1283571B1 (de) * | 2001-08-06 | 2015-01-14 | nanoplus GmbH Nanosystems and Technologies | Laser mit schwach gekoppeltem Gitterbereich |
ATE361565T1 (de) * | 2002-03-08 | 2007-05-15 | Nanoplus Gmbh Nanosystems And | Ein halbleiterlaserarray mit seitlicher gratingstruktur |
US7082249B2 (en) * | 2004-03-26 | 2006-07-25 | Sarnoff Corporation | Low optical overlap mode (LOOM) waveguiding system and method of making same |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4178604A (en) * | 1973-10-05 | 1979-12-11 | Hitachi, Ltd. | Semiconductor laser device |
DE2422287A1 (de) * | 1974-05-08 | 1975-11-13 | Siemens Ag | Halbleiter-laserdiode fuer dauerbetrieb |
JPS5180187A (ja) * | 1975-01-09 | 1976-07-13 | Kogyo Gijutsuin | Handotaisochi |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
JPS6027180B2 (ja) * | 1975-09-16 | 1985-06-27 | 株式会社日立製作所 | 半導体装置の製造方法 |
JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
US4053349A (en) * | 1976-02-02 | 1977-10-11 | Intel Corporation | Method for forming a narrow gap |
JPS52116185A (en) * | 1976-03-26 | 1977-09-29 | Hitachi Ltd | Mesa-type semiconductor laser |
US4061530A (en) * | 1976-07-19 | 1977-12-06 | Fairchild Camera And Instrument Corporation | Process for producing successive stages of a charge coupled device |
US4269635A (en) * | 1977-12-28 | 1981-05-26 | Bell Telephone Laboratories, Incorporated | Strip buried heterostructure laser |
US4236122A (en) * | 1978-04-26 | 1980-11-25 | Bell Telephone Laboratories, Incorporated | Mesa devices fabricated on channeled substrates |
US4230997A (en) * | 1979-01-29 | 1980-10-28 | Bell Telephone Laboratories, Incorporated | Buried double heterostructure laser device |
NL7903197A (nl) * | 1979-04-24 | 1980-10-28 | Philips Nv | Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze |
JPS55153389A (en) * | 1979-05-18 | 1980-11-29 | Nec Corp | Semiconductor laser device |
JPS5811512B2 (ja) * | 1979-07-25 | 1983-03-03 | 超エル・エス・アイ技術研究組合 | パタ−ン形成方法 |
US4366568A (en) * | 1979-12-20 | 1982-12-28 | Matsushita Electric Industrial Co. Ltd. | Semiconductor laser |
US4377865A (en) * | 1979-12-20 | 1983-03-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
US4354898A (en) * | 1981-06-24 | 1982-10-19 | Bell Telephone Laboratories, Incorporated | Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures |
US4400813A (en) * | 1981-07-20 | 1983-08-23 | Bell Telephone Laboratories, Incorporated | Crenelated-ridge waveguide laser |
JPS5864044A (ja) * | 1981-10-14 | 1983-04-16 | Toshiba Corp | 半導体装置の製造方法 |
JPS5878487A (ja) * | 1981-10-29 | 1983-05-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レ−ザ |
JPS5878488A (ja) * | 1981-11-05 | 1983-05-12 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分布帰還形半導体レーザの駆動方法 |
US4390393A (en) * | 1981-11-12 | 1983-06-28 | General Electric Company | Method of forming an isolation trench in a semiconductor substrate |
US4468850A (en) * | 1982-03-29 | 1984-09-04 | Massachusetts Institute Of Technology | GaInAsP/InP Double-heterostructure lasers |
US4573163A (en) * | 1982-09-13 | 1986-02-25 | At&T Bell Laboratories | Longitudinal mode stabilized laser |
US4545114A (en) * | 1982-09-30 | 1985-10-08 | Fujitsu Limited | Method of producing semiconductor device |
CA1204525A (en) * | 1982-11-29 | 1986-05-13 | Tetsu Fukano | Method for forming an isolation region for electrically isolating elements |
-
1984
- 1984-03-12 GB GB848406432A patent/GB8406432D0/en active Pending
-
1985
- 1985-03-07 EP EP85301599A patent/EP0156566B2/de not_active Expired - Lifetime
- 1985-03-07 US US06/709,196 patent/US4728628A/en not_active Expired - Lifetime
- 1985-03-07 CA CA000475924A patent/CA1228936A/en not_active Expired
- 1985-03-07 AT AT85301599T patent/ATE64244T1/de not_active IP Right Cessation
- 1985-03-07 DE DE8585301599T patent/DE3583053D1/de not_active Expired - Lifetime
- 1985-03-12 JP JP60049175A patent/JPH0710016B2/ja not_active Expired - Lifetime
-
1986
- 1986-11-04 US US06/926,720 patent/US4805184A/en not_active Expired - Lifetime
-
1992
- 1992-03-12 JP JP9003392A patent/JPH07112098B2/ja not_active Expired - Lifetime
-
1997
- 1997-10-22 JP JP9309250A patent/JPH10145008A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0156566B1 (de) | 1991-06-05 |
ATE64244T1 (de) | 1991-06-15 |
US4728628A (en) | 1988-03-01 |
GB8406432D0 (en) | 1984-04-18 |
JPH05304337A (ja) | 1993-11-16 |
CA1228936A (en) | 1987-11-03 |
US4805184A (en) | 1989-02-14 |
JPH07112098B2 (ja) | 1995-11-29 |
EP0156566B2 (de) | 1995-05-24 |
JPS61179588A (ja) | 1986-08-12 |
JPH0710016B2 (ja) | 1995-02-01 |
JPH10145008A (ja) | 1998-05-29 |
EP0156566A1 (de) | 1985-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8363 | Opposition against the patent | ||
8366 | Restricted maintained after opposition proceedings |