JPS55153389A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS55153389A
JPS55153389A JP6200679A JP6200679A JPS55153389A JP S55153389 A JPS55153389 A JP S55153389A JP 6200679 A JP6200679 A JP 6200679A JP 6200679 A JP6200679 A JP 6200679A JP S55153389 A JPS55153389 A JP S55153389A
Authority
JP
Japan
Prior art keywords
high temperature
metal layers
semiconductor laser
laser
highly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6200679A
Other languages
Japanese (ja)
Inventor
Masato Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6200679A priority Critical patent/JPS55153389A/en
Publication of JPS55153389A publication Critical patent/JPS55153389A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0236—Fixing laser chips on mounts using an adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Abstract

PURPOSE:To obtain a highly reliable device capable of withstanding high temperature by the heat welding technique that metals joint together under the mechanical pressure at a high temperature. CONSTITUTION:AlGaAs undergoes the multi-layer epitaxial growth to form a semiconductor laser 1 with a double heterostructure. To dissipate the heat on an active layer 5 as a thermal surface, the laser is bonded on a diamond heat sink 2 with p side downward. The highly adhesive first metal layers 3, 3' and 3'' including Ti, Zr, Hf, Cr, Mo and W is fomed at the thickness of about 0.01-0.1mum and highly conductive and malleable second metal layers 4, 4' and 4'' including Au, Ag, Cu and Al is evaporated under vacuum on the first metal layers at the thickness of about 1-5mum. Then, the pressure is applied on the laser above the specified level to joint the components by the heat welding while it is maintained above the specified temperature. Thus, a highly reliable semiconductor laser device withstanding high temperature can be produced.
JP6200679A 1979-05-18 1979-05-18 Semiconductor laser device Pending JPS55153389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6200679A JPS55153389A (en) 1979-05-18 1979-05-18 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6200679A JPS55153389A (en) 1979-05-18 1979-05-18 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS55153389A true JPS55153389A (en) 1980-11-29

Family

ID=13187628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6200679A Pending JPS55153389A (en) 1979-05-18 1979-05-18 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS55153389A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728628A (en) * 1984-03-12 1988-03-01 British Telecommunications Public Limited Company Method of making ridge waveguide lasers
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
EP0766354A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Laser diode construction element with heat sink
WO2000063967A1 (en) * 1999-04-20 2000-10-26 Toyo Kohan Co., Ltd. Heat sink base, heat sink, and method of manufacturing heat sink
GB2525290A (en) * 2014-02-26 2015-10-21 Element Six N V Mounted diamond components and methods of fabricating the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4728628A (en) * 1984-03-12 1988-03-01 British Telecommunications Public Limited Company Method of making ridge waveguide lasers
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
EP0766354A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Laser diode construction element with heat sink
US5812570A (en) * 1995-09-29 1998-09-22 Siemens Aktiengesellschaft Laser diode component with heat sink and method of producing a plurality of laser diode components
WO2000063967A1 (en) * 1999-04-20 2000-10-26 Toyo Kohan Co., Ltd. Heat sink base, heat sink, and method of manufacturing heat sink
GB2525290A (en) * 2014-02-26 2015-10-21 Element Six N V Mounted diamond components and methods of fabricating the same

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