JPS5780788A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPS5780788A JPS5780788A JP15744880A JP15744880A JPS5780788A JP S5780788 A JPS5780788 A JP S5780788A JP 15744880 A JP15744880 A JP 15744880A JP 15744880 A JP15744880 A JP 15744880A JP S5780788 A JPS5780788 A JP S5780788A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- stem
- diode
- metallic
- laser oscillation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To preferably radiate generated heat at the time of oscillating a laser by forming one or more P-N junctions at a silicon submount interposed between a laser diode and a metallic block stem, thereby interrupting a DC passage unnecessary for the laser oscillation. CONSTITUTION:A laser diode 10 is associated on a silicon submount 20 having good conductivity on a metallic stem 11, is bonded with adhesive of alloy solder having good thermal conductivity, and a laser oscillator is formed. A fine Au wire 15 to the external lead 17 of the stem 11 and a fine Au wire 16 to an external lead 18 insulated and supported to the stem 11 are formed at positive and negative metallic electrodes 6, 7 of the diode 10. A P-N junction 25 by more than one N type layers 23 and P type layers 24 is formed on the mount 20, and when bias is applied to between the leads 17, 18, a DC passage unnecessary for the laser oscillation is interrupted by the P-N junction 25, and the heat generated at the time of laser oscillation is preferably dissipated to alleviate the thermal strain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744880A JPS5780788A (en) | 1980-11-07 | 1980-11-07 | Laser device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15744880A JPS5780788A (en) | 1980-11-07 | 1980-11-07 | Laser device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5780788A true JPS5780788A (en) | 1982-05-20 |
Family
ID=15649873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15744880A Pending JPS5780788A (en) | 1980-11-07 | 1980-11-07 | Laser device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5780788A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10957893B2 (en) | 2016-07-21 | 2021-03-23 | Autonetworks Technologies, Ltd. | Terminal fitting and wiring module using same |
-
1980
- 1980-11-07 JP JP15744880A patent/JPS5780788A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10957893B2 (en) | 2016-07-21 | 2021-03-23 | Autonetworks Technologies, Ltd. | Terminal fitting and wiring module using same |
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