JPS5790992A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5790992A
JPS5790992A JP16888180A JP16888180A JPS5790992A JP S5790992 A JPS5790992 A JP S5790992A JP 16888180 A JP16888180 A JP 16888180A JP 16888180 A JP16888180 A JP 16888180A JP S5790992 A JPS5790992 A JP S5790992A
Authority
JP
Japan
Prior art keywords
plate
soldered
hole
lead wire
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16888180A
Other languages
Japanese (ja)
Inventor
Shigeyuki Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16888180A priority Critical patent/JPS5790992A/en
Publication of JPS5790992A publication Critical patent/JPS5790992A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/0222—Gas-filled housings

Abstract

PURPOSE:To improve heat radiation efficiency in semiconductor laser device and also achieve its miniaturization by a method wherein a heat sink of the laser chip is directly fixed to a fitting plate and secured with a lead wire passed through a hole of an insulating supporter on the fitting plate. CONSTITUTION:A heat sink 2 is soldered to a projected section 10c of a fitting metal plate 10. A hole 11b of a solderable alumina ceramic plate 11 is fitted on the seat 10c and soldered to the plate 10. A lead wire 4 is passed through the hole 11a and hermetically adhered. A laser chip 3 is secured to the upper side of the heat sink 2 which is connected with the lead wire 4 by connecting wire 6, and a cover 8 is hermetically soldered to the fitting plate 10. With this structure, a heat radiation efficiency of the chip is improved, providing larger capacity, longer life as well as miniaturization of the device.
JP16888180A 1980-11-27 1980-11-27 Semiconductor laser device Pending JPS5790992A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16888180A JPS5790992A (en) 1980-11-27 1980-11-27 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16888180A JPS5790992A (en) 1980-11-27 1980-11-27 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5790992A true JPS5790992A (en) 1982-06-05

Family

ID=15876286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16888180A Pending JPS5790992A (en) 1980-11-27 1980-11-27 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5790992A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244041A (en) * 2017-07-10 2019-01-18 日本特殊陶业株式会社 Light-emitting component package for mounting
JP2019016722A (en) * 2017-07-10 2019-01-31 日本特殊陶業株式会社 Package for loading light-emitting device
JP2019016783A (en) * 2017-07-10 2019-01-31 日本特殊陶業株式会社 Package for mounting light-emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109244041A (en) * 2017-07-10 2019-01-18 日本特殊陶业株式会社 Light-emitting component package for mounting
JP2019016722A (en) * 2017-07-10 2019-01-31 日本特殊陶業株式会社 Package for loading light-emitting device
JP2019016783A (en) * 2017-07-10 2019-01-31 日本特殊陶業株式会社 Package for mounting light-emitting device

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