JPS5627988A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5627988A
JPS5627988A JP10312679A JP10312679A JPS5627988A JP S5627988 A JPS5627988 A JP S5627988A JP 10312679 A JP10312679 A JP 10312679A JP 10312679 A JP10312679 A JP 10312679A JP S5627988 A JPS5627988 A JP S5627988A
Authority
JP
Japan
Prior art keywords
laser
crystal
submount
semiconductor laser
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10312679A
Other languages
Japanese (ja)
Inventor
Shigeyuki Akiba
Kazuo Sakai
Yuichi Matsushima
Takaya Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KDDI Corp
Original Assignee
Kokusai Denshin Denwa KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Denshin Denwa KK filed Critical Kokusai Denshin Denwa KK
Priority to JP10312679A priority Critical patent/JPS5627988A/en
Priority to GB8026391A priority patent/GB2062346A/en
Publication of JPS5627988A publication Critical patent/JPS5627988A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips

Abstract

PURPOSE: To reduce the distortion of the semiconductor laser device as much as possible at the time of mounting it by employing a crystal equal to a laser crystal as a submount.
CONSTITUTION: The laser 3 is mounted with a solder 2 on a submount 1, a lead wire 4 is attached thereto, and is mounted with a solder 6 on a heat sink 5. A crystal equal to the laser crystal is used as the submount 1 therein. In this case, since the thermal expansion factors of both are equal, even if hard solder such as tin is used, no distortion is induced at the laser.
COPYRIGHT: (C)1981,JPO&Japio
JP10312679A 1979-08-15 1979-08-15 Semiconductor laser device Pending JPS5627988A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP10312679A JPS5627988A (en) 1979-08-15 1979-08-15 Semiconductor laser device
GB8026391A GB2062346A (en) 1979-08-15 1980-08-13 Semiconductor Laser Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10312679A JPS5627988A (en) 1979-08-15 1979-08-15 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5627988A true JPS5627988A (en) 1981-03-18

Family

ID=14345867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10312679A Pending JPS5627988A (en) 1979-08-15 1979-08-15 Semiconductor laser device

Country Status (2)

Country Link
JP (1) JPS5627988A (en)
GB (1) GB2062346A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5638391A (en) * 1994-12-21 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and optical disc apparatus provided with the semiclonductor laser device
US6479325B2 (en) * 1999-12-07 2002-11-12 Sony Corporation Method of stacking semiconductor laser devices in a sub-mount and heatsink
US7247514B2 (en) 2003-04-11 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3137441A1 (en) * 1981-09-21 1983-03-31 Siemens AG, 1000 Berlin und 8000 München METHOD FOR FIXING OPTICAL AND ELECTROOPTIC COMPONENTS
US4797728A (en) * 1986-07-16 1989-01-10 General Electric Company Semiconductor device assembly and method of making same
GB8807729D0 (en) * 1988-03-31 1988-05-05 British Telecomm Device mounting
JPH0750813B2 (en) * 1988-05-23 1995-05-31 三菱電機株式会社 Submount for semiconductor laser device
JPH05343790A (en) * 1992-06-04 1993-12-24 Rohm Co Ltd Semiconductor laser equipment and manufacture thereof
DE19611046A1 (en) * 1996-03-20 1997-09-25 Siemens Ag Semiconductor device
US7170151B2 (en) * 2003-01-16 2007-01-30 Philips Lumileds Lighting Company, Llc Accurate alignment of an LED assembly

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5638391A (en) * 1994-12-21 1997-06-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device and optical disc apparatus provided with the semiclonductor laser device
US6479325B2 (en) * 1999-12-07 2002-11-12 Sony Corporation Method of stacking semiconductor laser devices in a sub-mount and heatsink
US6720581B2 (en) * 1999-12-07 2004-04-13 Sony Corporation Mounting plate for a laser chip in a semiconductor laser device
US7247514B2 (en) 2003-04-11 2007-07-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for producing the same

Also Published As

Publication number Publication date
GB2062346A (en) 1981-05-20

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