JPS6467964A - Multilayer electrode structure - Google Patents

Multilayer electrode structure

Info

Publication number
JPS6467964A
JPS6467964A JP22503887A JP22503887A JPS6467964A JP S6467964 A JPS6467964 A JP S6467964A JP 22503887 A JP22503887 A JP 22503887A JP 22503887 A JP22503887 A JP 22503887A JP S6467964 A JPS6467964 A JP S6467964A
Authority
JP
Japan
Prior art keywords
layer
multilayer electrode
heat resistance
barrier metal
sufficient heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22503887A
Other languages
Japanese (ja)
Inventor
Shinichi Sakamoto
Takuji Sonoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP22503887A priority Critical patent/JPS6467964A/en
Priority to FR8811735A priority patent/FR2620270B1/en
Publication of JPS6467964A publication Critical patent/JPS6467964A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wire Bonding (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a multilayer electrode having a sufficient heat resistance and a strong bonding strength by laminating a high melting point barrier metal layer formed of one of Mo and W on a first Ti layer. CONSTITUTION:A high-melting-point barrier metal layer 4 is formed of one of Mo and W, and an another Ti layer 8 is newly provided between the layer 4 and an electrode layer 5. Since the layer 4 prevents the Ga of an N-type GaAs layer 2 from diffusing outside, sufficient heat resistance is obtained. The layer 4 is bonded through a second Ti layer 8 to the layer 5, its bonding strength is larger than the case that the layer 4 is directly bonded to the layer 5, and malfunctions, such as an exfoliation at the time of wire bonding can be reduced.
JP22503887A 1987-09-08 1987-09-08 Multilayer electrode structure Pending JPS6467964A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP22503887A JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure
FR8811735A FR2620270B1 (en) 1987-09-08 1988-09-08 MULTI-LAYER ELECTRODE STRUCTURE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22503887A JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure

Publications (1)

Publication Number Publication Date
JPS6467964A true JPS6467964A (en) 1989-03-14

Family

ID=16823077

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22503887A Pending JPS6467964A (en) 1987-09-08 1987-09-08 Multilayer electrode structure

Country Status (2)

Country Link
JP (1) JPS6467964A (en)
FR (1) FR2620270B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522325A (en) * 2011-11-15 2012-06-27 北京时代民芯科技有限公司 Production method for submicron multilayer metallic electrode

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0460531A1 (en) * 1990-06-07 1991-12-11 Siemens Aktiengesellschaft Contact metallisation on semiconductor material
AU5370198A (en) * 1996-12-06 1998-06-29 Raytheon Ti Systems, Inc. Gate electrode for gaas fet
FR2914500B1 (en) * 2007-03-30 2009-11-20 Picogiga Internat IMPROVED OHMICALLY CONTACT ELECTRONIC DEVICE

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0045644B1 (en) * 1980-08-04 1987-03-18 Santa Barbara Research Center Metallic contacts to compound semiconductor devices
JPS57177565A (en) * 1981-04-24 1982-11-01 Nec Corp Multi-layer electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102522325A (en) * 2011-11-15 2012-06-27 北京时代民芯科技有限公司 Production method for submicron multilayer metallic electrode

Also Published As

Publication number Publication date
FR2620270A1 (en) 1989-03-10
FR2620270B1 (en) 1992-02-28

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