JPS59213189A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS59213189A JPS59213189A JP58085739A JP8573983A JPS59213189A JP S59213189 A JPS59213189 A JP S59213189A JP 58085739 A JP58085739 A JP 58085739A JP 8573983 A JP8573983 A JP 8573983A JP S59213189 A JPS59213189 A JP S59213189A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- glass
- glass plate
- film
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 34
- 239000011521 glass Substances 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 abstract description 28
- 238000004519 manufacturing process Methods 0.000 abstract description 23
- 230000008018 melting Effects 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 17
- 238000007747 plating Methods 0.000 abstract description 8
- 238000009736 wetting Methods 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000005357 flat glass Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910017060 Fe Cr Inorganic materials 0.000 description 1
- 229910002544 Fe-Cr Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- UPHIPHFJVNKLMR-UHFFFAOYSA-N chromium iron Chemical compound [Cr].[Fe] UPHIPHFJVNKLMR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔技術分野〕
本発明は半導体装置、特に光を発する発光装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a semiconductor device, and particularly to a light emitting device that emits light.
半導体装置の一つとして、オーディオディス久ビデオデ
ィスク、光通信等の発光源となる半導体レーザ装置が、
たとえば１９８１年９月１４日付発行の日経エレクトロ
ニクス誌１３８〜１５１％にも記載されているように開
発市販されている。One type of semiconductor device is a semiconductor laser device, which serves as a light emitting source for audio discs, video discs, optical communications, etc.
For example, it has been developed and commercially available as described in Nikkei Electronics Magazine 138-151% published September 14, 1981.
この半導体レーザ装置は半導体レーザ素子の共振器端面
の劣化防止、レーザ光をモニタする受光素子のアルミニ
ウムからなる配線層の酸化防止等のタメニ、パッケージ
の内部は不活性雰囲気ガス（Ｎｔ ガス）Ｋよって置換
されるとともに、パッケージはハーメチック・シール構
造となっている。This semiconductor laser device has several benefits such as preventing deterioration of the resonator end face of the semiconductor laser element and preventing oxidation of the wiring layer made of aluminum of the light receiving element that monitors the laser beam. In addition to being replaced, the package has a hermetic seal structure.
また、パッケージの窓部分には透明な平面ガラス板が低
融点ガラスによって取り付けられている。Additionally, a transparent flat glass plate is attached to the window portion of the package using low melting point glass.
しかし、このような構造の半導体レーザ装置では下記の
ようないくつかの問題点が生じることが本発明者によっ
てあきらかとされた。However, the inventors have found that a semiconductor laser device having such a structure has several problems as described below.
（１）ガラス板はＦｅ系合金（たとえば、ｐｅ−Ｎｉ−
ＣＯ合金）からなるパッケージ部品であるキャップの窓
部分に低融点ガラスによって接合されているが、キャッ
プと低融点ガラスとの接着強度は弱く、比較的軽微な衝
撃によってもその接着部分が破壊され、パッケージの気
密性維持が困難となり易い。(1) The glass plate is made of Fe-based alloy (for example, pe-Ni-
The window part of the cap, which is a package component made of CO alloy), is bonded to the window part of the cap using low melting point glass, but the adhesive strength between the cap and the low melting point glass is weak, and even a relatively slight impact can destroy the bonded part. It tends to be difficult to maintain the airtightness of the package.
（２）従来のこの種半導体レーザ装置はキャップの外表
面の酸化防止のために、ガラス板接着後ＶｃＡｕあるい
はＮｉ等をめっきしている。このめっき処理にあっては
、その前工程として、ガラス板を接着したキャンプの脱
脂、酸洗い処理が行なわれる。(2) In conventional semiconductor laser devices of this type, the outer surface of the cap is plated with VcAu or Ni after bonding to the glass plate to prevent oxidation. In this plating process, as a pre-process, the camp to which the glass plate is bonded is degreased and pickled.
そして、この処理時の処理液がキャップと低融点ガラス
との接着部分に作用して、接着部分を劣化させ、ハーメ
チック・シール効果を低下させてしまうことも判明した
。It has also been found that the processing liquid during this treatment acts on the bonded portion between the cap and the low-melting point glass, deteriorating the bonded portion and reducing the hermetic sealing effect.
（３）従来の半導体レーザ装置は、その製造時、低融点
ガラスとキャンプとの接着性を向上させるために、接着
工程前にキャップを加熱処理してキャップの表面の酸化
を図り、この酸化物と低融点ガラスとの接着性が良いこ
とを利用して良好な接着性を得ようとしている。しかし
、キャップ表面の酸化物は厚すぎると酸化物とギャップ
素地との界面で剥離が生じたりして気密接着が損なわれ
、酸化物が薄すぎると低融点ガラスとキャップとの間の
良好な接着性が得られず、適正な厚さの酸化物を得るこ
とが難しい。(3) When manufacturing a conventional semiconductor laser device, in order to improve the adhesion between the low-melting point glass and the camp, the cap is heat-treated to oxidize the surface of the cap before the adhesion process, and this oxide is We are trying to obtain good adhesion by taking advantage of the good adhesion between glass and low-melting point glass. However, if the oxide on the cap surface is too thick, peeling may occur at the interface between the oxide and the gap substrate, impairing the airtight adhesion, while if the oxide is too thin, good adhesion between the low melting point glass and the cap will be impaired. It is difficult to obtain an oxide with an appropriate thickness.
本発明の目的は低融点ガラスを用いてガラス板を金属キ
ャップに接着する構造において、気密接着が可能な構造
を提供することにより、半導体装置の耐湿性向上、寿命
向上を図ることにある。An object of the present invention is to provide a structure in which a glass plate is bonded to a metal cap using low-melting point glass, which allows airtight adhesion, thereby improving the moisture resistance and lifespan of a semiconductor device.
本発明の前記ならびにそのはかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and further objects and novel features of the present invention are:
It will become clear from the description of this specification and the accompanying drawings.
本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.
すなわち、本発明は鉄系合金で形成されたキャップの窓
部分に低融点ガラスによって透明な平面ガラス板を気密
接着するに先立って、キャップの平面ガラス板取付面に
あらかじめアルミニウム層からなる低融点ガラスとの接
着性の良好な物質な被着させておくことＫより、低融点
ガラスとキャップどの気密接着性を向上させ、機械強度
の高いパッケージ構造を提供し、耐湿性に優れ、寿命の
長い半導体装置の提供を達成するものである。That is, in the present invention, prior to airtightly bonding a transparent flat glass plate with low melting point glass to the window portion of the cap made of an iron-based alloy, a low melting point glass made of an aluminum layer is preliminarily attached to the flat glass plate mounting surface of the cap. By applying a substance with good adhesion to the cap, it improves the airtight adhesion between the low melting point glass and the cap, provides a package structure with high mechanical strength, has excellent moisture resistance, and has a long lifespan for semiconductors. This is accomplished by providing a device.
〔実施例１〕
第１図（ａｌ〜（ｃｌは本発明を半導体レーザ装置の製
造に適用した例を示す斜視図および断面図である。[Example 1] FIG. 1 (al to (cl) are a perspective view and a sectional view showing an example in which the present invention is applied to manufacturing a semiconductor laser device.
同図ｆａｌに示すように、−面に低融点ガラスと強固に
接着する物質、たとえばアルミニウム（ＡＩ３）を被着
したキャップ製造素材ｌを用意する。キャップ製造素材
ｌは鉄（Ｆｅ）系合金、たとえば、Ｆｅ−Ｎｉ −Ｃｒ
、 Ｆｅ −Ｎｊ −Ｃｏ 、 Ｆｅ −Ｎｉ 。As shown in FIG. fal, a cap manufacturing material 1 is prepared, the negative side of which is coated with a substance that firmly adheres to low-melting glass, such as aluminum (AI3). The cap manufacturing material l is an iron (Fe) alloy, for example, Fe-Ni-Cr.
, Fe-Nj-Co, Fe-Ni.
＼
Ｆｅ−Ｃｒ （ここでＮｉはニッケル、Ｃｒはクロム
、Ｃｏはコバルト）からなり、１ｍｓ以下の薄い平板と
なっている。また、Ａ４膜２はクラッド法、蒸着法、め
っき法等によって形成され、０．０１μｍ〜数ｌＯμｍ
Ａの厚さとなっている。It is made of Fe-Cr (where Ni is nickel, Cr is chromium, and Co is cobalt) and is a thin flat plate with a width of 1 ms or less. The A4 film 2 is formed by a cladding method, vapor deposition method, plating method, etc., and has a thickness of 0.01 μm to several 10 μm.
It has a thickness of A.
つぎに、このようなキャップ製造素材１をブレスによっ
て打ち抜くとともに絞り、同図（ｂ）に示すような鍔部
３を有する帽子型のキャップ４を形成する。また、キャ
ップ４の中央部は打ち抜かれて円形状の窓５が設ゆられ
ている。この際、Ａβ膜２が内壁を形成するように打ち
抜く。Next, such a cap manufacturing material 1 is punched out and squeezed using a press to form a cap-shaped cap 4 having a flange 3 as shown in FIG. 3(b). Further, the center portion of the cap 4 is punched out to form a circular window 5. At this time, the Aβ film 2 is punched out so as to form an inner wall.
つぎ忙、キ。ヤップ４の窓５の内側に低融点ガラス６を
介して透明なガラス板７を接着する。ガラス板７は後述
するレーザ光が歪むことなく透過するように平行度、平
坦度の良好なものが使われる。Busy next time, ki. A transparent glass plate 7 is adhered to the inside of the window 5 of the window 4 via a low melting point glass 6. The glass plate 7 used has good parallelism and flatness so that laser light, which will be described later, can pass therethrough without being distorted.
低融点ガラスはキャップ４の窓内周面あるいはガラス板
周面にあらかじめ付着形成しておくか、またはリング状
に形成した接続体をガラス板７とキャップ４との間に介
在させ、この状態で加熱（４００〜５ｏｏｔ；）して低
融点ガラスの再溶融によりガラス板７をキャップ４に接
着する。The low melting point glass may be pre-adhered to the inner circumferential surface of the window of the cap 4 or the circumferential surface of the glass plate, or a connecting body formed in a ring shape may be interposed between the glass plate 7 and the cap 4, and the glass may be placed in this state. The glass plate 7 is bonded to the cap 4 by heating (400 to 5 feet;) to remelt the low melting point glass.
つぎに、このようにガラス板７を取り付けたキャップ４
を窒素雰囲気下で行なわれるリングウェルドによってス
テム８に固定し、同図（ｃｌに示すような半導体レーザ
装置９を製造する。ステム８は熱伝導性の良好な金属、
たとえばＣｕ （銅）がらなり、キャップ４によって被
われるパッケージ側面には熱伝導性の良好な金属、たと
えばＣｕからなるヒートブロック１０が固定されている
。また、このヒートブロックｌＯの上端−側面にはサブ
マウント１１を介して半導体レーザ素子（チップ）１２
が固定されている。前記サブマウントｌｌはチップ１２
とヒートブロック１０とによって生じる熱ストレスの吸
収板として作用する。レーザ光１３はチップ１２の上端
および下端の共振器端面から発振される。また、チップ
１２の下端から発振するレーザ光１３をモニタする受光
素子１４がステム８上に固定されている。また、ステム
８には所望本数のり−ド１５が絶縁的あるいは導電的に
取り付けられ、それぞれワイヤ等を介して半導体Ｖ−ザ
素子１２および受光素子１４の電極と電気的に接続され
ている。Next, the cap 4 with the glass plate 7 attached in this way
is fixed to the stem 8 by ring welding performed under a nitrogen atmosphere, and a semiconductor laser device 9 as shown in the same figure (cl) is manufactured.The stem 8 is made of a metal with good thermal conductivity,
A heat block 10 made of a metal with good thermal conductivity, such as Cu, is fixed to the side surface of the package covered by the cap 4, for example. Further, a semiconductor laser element (chip) 12 is connected via a submount 11 to the upper end and side surface of this heat block IO.
is fixed. The submount ll is the chip 12
and the heat block 10. Laser light 13 is oscillated from the resonator end faces at the upper and lower ends of chip 12. Further, a light receiving element 14 that monitors the laser beam 13 oscillated from the lower end of the chip 12 is fixed on the stem 8. Further, a desired number of boards 15 are insulatively or conductively attached to the stem 8, and are electrically connected to the electrodes of the semiconductor V-za element 12 and the light receiving element 14 via wires or the like.
なお、キャップ４をステム８に溶接する際、ＡＢ膜２は
抵抗が小さく、充分な発熱が生じない場合には、キャッ
プ４の鍔部３の下面にプロジェクションを設けておいて
、確実な溶接ができるようにする方法を採用してもよい
。Note that when welding the cap 4 to the stem 8, if the AB film 2 has low resistance and does not generate sufficient heat, a projection may be provided on the lower surface of the flange 3 of the cap 4 to ensure reliable welding. You may adopt a method that makes it possible.
このような製造方法によれば、ガラス板７とキャップ４
とは気密的に接着され、かつその接着強度も高いものと
なる。すなわち、キャップ４に被着されたＡｇ膜２はク
ラッド法、蒸着法、めっき法によって被着されるため、
接着強度は高い。また、ガラス板７と低融点ガラス６と
は両者がガラスであることから濡れ性もよく、その接着
強度も太キい。また、Ａ４膜２はＡＩで形成されている
が、Ａｉは本来酸化し易く、大気中に放置されるだけで
その表面は酸化されＡＩ３ ｔ Ｏ＊という酸化膜が形
成される。この酸化膜はＡ［母材とは強固に接合してい
るとともに、ガラスとの濡れ性もよく接着性も高い。こ
のようなことから、ガラス板７とキャップ４とは強固か
つ気密的に接着される。また、キャップ４はステム８に
溶接によって接着されることから、気密的にかつ強固に
接着される。According to such a manufacturing method, the glass plate 7 and the cap 4
It is airtightly bonded to the substrate and has high adhesive strength. That is, since the Ag film 2 deposited on the cap 4 is deposited by a cladding method, a vapor deposition method, or a plating method,
Adhesive strength is high. Furthermore, since the glass plate 7 and the low melting point glass 6 are both glass, they have good wettability and have a high adhesive strength. Further, the A4 film 2 is formed of AI, which is inherently easy to oxidize, and just by being left in the atmosphere, its surface is oxidized and an oxide film called AI3 t O* is formed. This oxide film is strongly bonded to the A[base material and has good wettability with glass and high adhesion. For this reason, the glass plate 7 and the cap 4 are firmly and airtightly bonded. Further, since the cap 4 is bonded to the stem 8 by welding, it is bonded airtightly and firmly.
したがって、ガラス板７とキャップ４とが前記のように
気密的にかつ強固に接着されることもあって、チップ等
は気密的に封止（パッケージ）され、かつ各接着部の機
械的強度も高くなる。この結果、比較的軽微な衝撃等で
は最も機械的強度が低いと推定できる低融点ガラス６と
キャップ４との接着部分は破損せず、半導体レーザ装置
の耐湿性が向上する。また、耐湿性の向上によって、半
導体レーザ素子、受光素子の劣化も起きにくくなり、半
導体レーザ装置の信頼性の向上、長寿命化が図れる。Therefore, since the glass plate 7 and the cap 4 are bonded airtightly and firmly as described above, the chips etc. are hermetically sealed (packaged) and the mechanical strength of each bonded portion is also maintained. It gets expensive. As a result, the adhesive portion between the low melting point glass 6 and the cap 4, which is estimated to have the lowest mechanical strength, is not damaged by a relatively slight impact, and the moisture resistance of the semiconductor laser device is improved. Further, due to improved moisture resistance, deterioration of the semiconductor laser element and the light receiving element is less likely to occur, and reliability and longevity of the semiconductor laser device can be improved.
また、キャップ４と低融点ガラス６との密着性向上の結
果、キャップ４０表面にＡｕ （金）あるいはＮｉ等を
めっきする場合であっても、前処理の酸洗い時の処理液
に対して強くなり、キャップ４と低融点ガラス６との機
械的強度低下は起き難くなる。このため、めっき処理に
起因する気密性低下は生じ難くなる。In addition, as a result of improved adhesion between the cap 4 and the low melting point glass 6, even when the surface of the cap 40 is plated with Au (gold), Ni, etc., it is resistant to the processing solution during pickling in pre-treatment. Therefore, mechanical strength reduction between the cap 4 and the low melting point glass 6 is less likely to occur. Therefore, deterioration in airtightness due to plating treatment is less likely to occur.
また、このような半導体レーザ装置はその製造時、低融
点ガラスに対する接着性向上処理としてのキャップの酸
化処理が不要となるため、工程数低減圧よる生産コスト
の軽減化が図れる。Further, when manufacturing such a semiconductor laser device, oxidation treatment of the cap as a treatment for improving adhesion to low-melting point glass is not necessary, so production costs can be reduced by reducing the number of steps and pressure.
〔実施例２〕
第２図は本発明の他の実施例による半導体レーザ装置を
示す断面図である。この実施例ではキャップ４は表裏面
にＡβ膜２を設けたキャップ製造素材から製造する。こ
の半導体レーザ装置は前記実施例と同様な効果を奏する
が、キャップ４の外面にもＡ［膜２が設けられているこ
とから、このＡＩ膜２をキャップ４の酸化防止保護膜と
して利用すること九より、従来性なっていためっき処理
を廃止することができるという新な効果を得ることがで
きる。[Embodiment 2] FIG. 2 is a sectional view showing a semiconductor laser device according to another embodiment of the present invention. In this embodiment, the cap 4 is manufactured from a cap manufacturing material provided with the Aβ film 2 on the front and back surfaces. This semiconductor laser device has the same effect as the above embodiment, but since the A film 2 is also provided on the outer surface of the cap 4, this AI film 2 can be used as an oxidation-preventing protective film for the cap 4. 9, a new effect can be obtained in that the conventional plating process can be abolished.
〔実施例３〕
第３図は本発明の他の実施例による半導体レーザ装置を
示す断面図である。この実施例ではキャップ４の外面に
のみＡ７膜２を設けた例を示す。[Embodiment 3] FIG. 3 is a sectional view showing a semiconductor laser device according to another embodiment of the present invention. This embodiment shows an example in which the A7 film 2 is provided only on the outer surface of the cap 4.
したがって、ガラス板７はキャップ４の外側に低融点ガ
ラス６を用いて接着した構造となる。この半導体レーザ
装置は前記実施例１と同様にキャップ４とガラス板７と
の接合強度向上に伴ない耐湿性向上、長寿命化、高信頼
度化が図れる。また、製造にあっては、キャップの酸化
処理工程、キャップのめつき処理工程を廃止できること
がら生産コストの低減が図れる。Therefore, the glass plate 7 has a structure in which the glass plate 7 is bonded to the outside of the cap 4 using the low melting point glass 6. Similar to the first embodiment, this semiconductor laser device can achieve improved moisture resistance, longer life, and higher reliability due to improved bonding strength between the cap 4 and the glass plate 7. Further, in manufacturing, the oxidation treatment process of the cap and the plating treatment process of the cap can be eliminated, so that production costs can be reduced.
また、キャップ４とステム８との溶接にあっては、Ｆｅ
とＦｅ系合金が溶接されるため、ＡＰとＦｅとの接触に
よるものよりも接触抵抗が太きい。In addition, when welding the cap 4 and the stem 8, Fe
Since the AP and the Fe-based alloy are welded together, the contact resistance is greater than that due to the contact between AP and Fe.
したがって、キャップ４の鍔部３にグロジェクションを
設けなくとも良好な溶接（気密的溶接）ができる効果が
ある。Therefore, there is an effect that good welding (airtight welding) can be performed without providing a glojection on the flange portion 3 of the cap 4.
（１）本発明は金属キャップとガラス板とを低融点ガラ
スによって接着するに際して、金属キャップと低融点ガ
ラスとの濡れ性向上、接着強度向上用の物質を両者間に
介在させることによって、気密接着化および高接着強度
化が可能となり、パッケージングの信頼度が向上した。(1) When bonding a metal cap and a glass plate with low melting point glass, the present invention provides an airtight bond by interposing a substance between the metal cap and the low melting point glass to improve their wettability and bond strength. It has become possible to increase the adhesive strength and improve the reliability of packaging.
この結果、光モニター用のフォトダイオードの耐圧劣化
、レーザ素子のパッジページＷノ破壊、窓ガラスへの水
滴付着、Ａβ腐食等が防止でき半導体装置の気密性。As a result, it is possible to prevent deterioration of the withstand voltage of the photodiode for optical monitoring, damage to the laser element's pad page W, adhesion of water droplets to the window glass, Aβ corrosion, etc., and improve the airtightness of the semiconductor device.
耐湿性向上、長寿命化が可能となる。It enables improved moisture resistance and longer life.
（２）本発明はキャップの外面に低融点ガラスとの接着
強度向上用の被膜を形成した場合、物質によってはキャ
ップの酸化防止膜として作用することから、従来性なっ
ていためつき処理を廃止でき、生産コストの低減化が図
れる。(2) In the present invention, when a film is formed on the outer surface of the cap to improve the adhesive strength with low-melting glass, some substances act as an oxidation-preventing film on the cap, so the conventional aging process can be eliminated. , production costs can be reduced.
（３） 本発明はキャップをＡＰ膜等を被着したクラ
ツド材等から製造することにより、キャップと低融点ガ
ラスとの接着促進処理である酸化処理を廃止できるため
、生産コストの低減化が図れる。(3) By manufacturing the cap from a clad material coated with an AP film or the like, the present invention can eliminate the oxidation treatment that promotes adhesion between the cap and the low-melting glass, reducing production costs. .
（４）上記（１）〜（３）により、耐湿性向上、生産コ
スト低減化の作用で、高い品質の製品を安価に提供でき
るとも・う相乗効果が得られる。(4) Due to the above (1) to (3), a synergistic effect can be obtained in that high quality products can be provided at low cost by improving moisture resistance and reducing production costs.
以上本発明者によってなされた発明を実施例にもとづき
具体的に説明１〜だが、本発明は上記実施例に限定され
るものではなく、その要旨を逸脱しない範囲で種々変更
可能であることはいうまでもない。たとえば、キャップ
の表裏面に／Ｌｇ膜等を設ける方法としては、Ｆｅ系合
金板を打ち抜き絞ってキャップを製造した後、これらキ
ャップヶディップ方式のめつき処理によってＡｌ１膜を
形成するようにしても、低コストでに、Ｑ膜付きキャッ
プを製造することができろ。The invention made by the present inventor has been specifically explained above based on Examples 1 to 1. However, it should be noted that the present invention is not limited to the above-mentioned Examples and can be modified in various ways without departing from the gist thereof. Not even. For example, as a method of providing a /Lg film etc. on the front and back surfaces of the cap, after manufacturing the cap by punching and squeezing an Fe-based alloy plate, an Al1 film can be formed by plating using the cap dip method. , it would be possible to manufacture caps with Q membranes at low cost.
以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野である半導体レーザ装置の
製造技術に適用した場合について説明したが、それに限
定されるものではなく、たとえば、発光ダイオード装置
製造技術、あるいは発光ダイオード、レーザダイオード
、受光素子を＃１−７／、込んだ半導体装置製造技術に
適用できる。本発明は少なくとも光の授受を必要とする
条件の半導体装置（電子装置）には適用できる。The above explanation has mainly been about the case where the invention made by the present inventor is applied to the manufacturing technology of semiconductor laser devices, which is the background field of application, but the invention is not limited thereto. The present invention can be applied to manufacturing technology or semiconductor device manufacturing technology incorporating light emitting diodes, laser diodes, and light receiving elements. The present invention is applicable to at least semiconductor devices (electronic devices) that require the transmission and reception of light.
第１図［ａｌ〜ｆｃｌは本発明の一実施例による半導体
レーザ装置の製造例を示す斜視図および断面図、第２図
は同じ（他の実施例による半導体レーザ装置の断面図、
第３図は同じく他の実施例による半導体レーザ装置の断
面図である。
１・・・キャップ製造素材、２・・・ＡＰ膜、３・・・
鍔部、４・・・キャップ、５・・・窓、６・・・低融点
ガラス、７・・・ガラス板、８・・・ステム、９・・・
半導体レーザ装置、１０・・・ヒートブロック、１１・
・・サブマウント、１２・・・半導体レーザ素子（チッ
プ）、１３・・・レーザ光、１４・・・受光素子、１５
・・・リード。
代理人 弁理士 高 橋 明 夫 。
シーＩ″
第 １ 図
第 ２ 図
第 ３ 図FIG. 1 [al to fcl are a perspective view and a cross-sectional view showing an example of manufacturing a semiconductor laser device according to an embodiment of the present invention, FIG. 2 is the same (a cross-sectional view of a semiconductor laser device according to another embodiment, and FIG. 1 is a cross-sectional view of a semiconductor laser device according to another embodiment. 1... Cap manufacturing material, 2... AP film, 3...
Flange, 4... Cap, 5... Window, 6... Low melting point glass, 7... Glass plate, 8... Stem, 9...
Semiconductor laser device, 10... Heat block, 11.
... Submount, 12... Semiconductor laser element (chip), 13... Laser light, 14... Light receiving element, 15
...Lead. Agent: Patent attorney Akio Takahashi. Sea I'' Figure 1 Figure 2 Figure 3
Claims (1)
ラス材と、アルミニウム膜とを介して、ガラス板が接着
されていることを特徴とする半導体装置。 ２、発光素子と該発光素子を封止する封止体とを有し前
記封止体の一部に開口部が設けられ、前記間［１部の全
面を覆うように、前記発光素子から出射される光を透過
する物質からなる部材が取りつけられている発光装置で
あって、前記部材は、ガラス拐とアルミニウム膜とを介
して前記封止体に固定されていることを特徴とする発光
装置。[Scope of Claim] A semiconductor device, characterized in that a glass plate is adhered to a part of a package component constituting the semiconductor device via a glass material and an aluminum film. 2. It has a light emitting element and a sealing body that seals the light emitting element, and an opening is provided in a part of the sealing body, and the light emitted from the light emitting element is formed so as to cover the entire surface of the part [1]. 1. A light-emitting device to which a member made of a substance that transmits light is attached, the member being fixed to the sealing body via a glass plate and an aluminum film. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58085739A JPS59213189A (en) | 1983-05-18 | 1983-05-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58085739A JPS59213189A (en) | 1983-05-18 | 1983-05-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59213189A true JPS59213189A (en) | 1984-12-03 |
Family
ID=13867206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58085739A Pending JPS59213189A (en) | 1983-05-18 | 1983-05-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59213189A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202565A (en) * | 1986-02-28 | 1987-09-07 | Shinko Electric Ind Co Ltd | Window cap and manufacture of the same |
| JPS6429838U (en) * | 1987-08-13 | 1989-02-22 | ||
| JPH0287580A (en) * | 1988-09-24 | 1990-03-28 | Nec Kansai Ltd | Cap for infrared sensor and manufacture thereof |
| CN105870308A (en) * | 2016-04-30 | 2016-08-17 | 浙江单色电子科技有限公司 | Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof |
| JPWO2016111038A1 (en) * | 2015-01-08 | 2017-09-07 | 株式会社村田製作所 | Piezoelectric vibration component and manufacturing method thereof |
-
1983
- 1983-05-18 JP JP58085739A patent/JPS59213189A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62202565A (en) * | 1986-02-28 | 1987-09-07 | Shinko Electric Ind Co Ltd | Window cap and manufacture of the same |
| JPS6429838U (en) * | 1987-08-13 | 1989-02-22 | ||
| JPH0287580A (en) * | 1988-09-24 | 1990-03-28 | Nec Kansai Ltd | Cap for infrared sensor and manufacture thereof |
| JPWO2016111038A1 (en) * | 2015-01-08 | 2017-09-07 | 株式会社村田製作所 | Piezoelectric vibration component and manufacturing method thereof |
| CN105870308A (en) * | 2016-04-30 | 2016-08-17 | 浙江单色电子科技有限公司 | Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof |
| CN105870308B (en) * | 2016-04-30 | 2019-11-05 | 浙江单色电子科技有限公司 | A kind of direct insertion purple LED of inorganic encapsulated and its manufacturing method |
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