TWI270187B - Thermal conductive apparatus and manufacturing method thereof - Google Patents

Thermal conductive apparatus and manufacturing method thereof Download PDF

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Publication number
TWI270187B
TWI270187B TW094144993A TW94144993A TWI270187B TW I270187 B TWI270187 B TW I270187B TW 094144993 A TW094144993 A TW 094144993A TW 94144993 A TW94144993 A TW 94144993A TW I270187 B TWI270187 B TW I270187B
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Taiwan
Prior art keywords
heat sink
heat
layer
conductive polymer
electrode
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TW094144993A
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Chinese (zh)
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TW200725838A (en
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Shau-Chew Wang
Jyh-Ming Yu
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Polytronics Technology Corp
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Priority to TW094144993A priority Critical patent/TWI270187B/en
Priority to US11/638,208 priority patent/US20070137835A1/en
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Publication of TWI270187B publication Critical patent/TWI270187B/en
Publication of TW200725838A publication Critical patent/TW200725838A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/642Heat extraction or cooling elements characterized by the shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28DHEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0028Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for cooling heat generating elements, e.g. for cooling electronic components or electric devices
    • F28D2021/0029Heat sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28HEAT EXCHANGE IN GENERAL
    • F28FDETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/18Arrangements for modifying heat-transfer, e.g. increasing, decreasing by applying coatings, e.g. radiation-absorbing, radiation-reflecting; by surface treatment, e.g. polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385Shape, e.g. interlocking features
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

The present invention discloses a thermal conductive apparatus, comprising a first electrode foil, a second electrode foil, a heat dissipation strip and a thermal conductive polymer dielectric layer. The thermal conductive polymer dielectric layer is stacked and disposed among the two electrode foils and the heat dissipation strip with a high thermal conductivity (greater than 1 W/mK). The interface among the thermal conductive polymer dielectric layer and the first and second electrode foils and the heat dissipation strip comprises at least a micro rough surface, which is formed by a plurality of nodules by means of electro-deposition. The first and second electrode foils are electrically spaced from each other and serve to connect to a heat radiating device and electrically connect to a power source.

Description

'1270187 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種散熱裝置及盆製 _ ^ 八表作方法,更具體而 曰’係關於一具有瘤狀突出物之與 灸铽粗糙面介面之散熱裝置 及其製作方法。 【先前技術】'1270187 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a heat dissipating device and a potting method, and more particularly to a rough surface of a moxibustion with a tumor-like protrusion Interface heat sink and its manufacturing method. [Prior Art]

3參照圖1,因金屬之導熱係數高,習知之散熱裳置1〇主要 疋利用-金屬散熱片14來散熱。但因金屬不單單只是導熱 也會導電,因此散熱裝置1G若具有導電之正極(第—電極⑴ 11 屬散熱片I4之間設一介電層13(dielectric layer)以防止短 路,此介電層13通常可用任何含介電性質之材料,例如·· 石央、氧化梦、電木或絕緣塑膠等。 惟,該介電層13使用上經常出現無法快速散熱以致發熱 元件(如發光二極體LED)之操作溫度升高之問題,造成發熱 元件令xf卩快速降低或是在數次冷熱衝擊後,該第一電極 11、第二電極12與介電層13間之介面,和金屬散熱片14與 介電層13間之介面因過於平滑導致結合力不足而產生剝 離’而大幅降低該介電層13之導熱效果;或是因該介電層 13與金屬電極(第一電極^及第二電極ι2)和金屬散熱片14 之間缺乏足夠的結合力而導致散熱裝置丨〇及其所載之發熱 元件毀損。 【發明内容】 本發明之主要目的係提供一種散熱裝置及其製作方法, Ρ28532 106688 005012201 1270187 利用二金屬络及散熱片與導熱高分子介電材料層間之粗糙 面’开> 成一具高結合強度及高散熱效率之散熱裝置,夢 以快速降低其上所承載之發熱元件(例如:發光二極體)之^ 度’而延長發熱元件之使用壽命及提高其可靠度。 為了達到上述目的,本發明揭示一種散熱裝置,其包含 一第一電極箔、一第二電極箔、一散熱片及一導熱高分= 介電材料層。該二金屬箔與該金屬散熱片包含至少一微粗 糙面,該微粗糙面包含複數個瘤狀突出物(n〇dule),其可由 電著法(electrodeposition)形成。該導熱高分子介電材料層 係疊°又於该二金屬箔與該金屬散熱片之間且具高導熱係數 (>l,〇W/mK),其上、下表面以微粗糙面物理接觸該二金屬 箱與該散熱片。 就其製作方法而言,首先提供一金屬箔及一散熱片,該 金屬泊及該散熱片之表面包含至少一微粗糙面,該微粗糙 面可利用電著法(electrodep〇siti〇n)形成複數個瘤狀突出物 而成。其次,將一導熱高分子介電材料層壓合於該金屬箔 及忒政熱片之間,使得該至少一微粗糙面與該導熱高分子 ^電材料層之上、下表面物理接觸,其中該導熱高分子介 電材料層之導熱係數係大於UW/恤。^,钱刻該金屬 落以形成電氣分離之一第一電極箱及一第二電極箱。 。另外,為增加電極之焊接強度及預防氧化,可在該第一 電極箱及該第二電極荡之表面分別形成一第一電鍍層及一 第二電鍍層。上述該第一電鍍層、第二電鍍層、第一金屬 層、第二金屬層、導熱高分子介電材料層及該金屬散熱片 • 6 - P28532 106688 〇〇5〇122〇1 1270187 形成之結構可利用沖床沖切ψ , ^ r切出一特定形狀以供使用。 【實施方式】 以下將藉由圖式說明本發明之散熱襄置之詳細製作過 程。 參照圖2,首先提供—上金屬㈣及―金屬散熱片^,其 中該上金屬簿21及該金屬散熱片24分別包含一微粗糙面 210及241。該微粗糙面21〇及241係利用電著法形成,其表 面包含複數個瘤狀突出物25〇,該瘤狀突出物25〇之尺寸大 小分佈係介於〇·1微米至100微米之間。該上金屬箔21之材 質係以銅、鋁或鎳為主,亦可使用其他金屬或合金或多層 之複合金屬如·鍍鎳銅箔及鎳銅壓延箔等。該金屬散熱片 24之材質則可選自銅或鋁。 之後,將一導熱高分子介電材料層23熱壓合於該上金屬 箔21及該金屬散熱片24之間形成一如圖3所示之多層層疊 結構。該微粗糙面210及241與該導熱高分子介電材料層23 之上、下表面係呈物理接觸,其中該微粗糙面21〇及241中 之瘤狀突出物250嵌入該導熱高分子介電材料層23中形成 機械式的互鎖(mechanical interlocking),因此該上金屬洛 21、該金屬散熱片24與中間之導熱高分子介電材料層23產 生非常強的結合力,即使在冷熱溫度衝擊下仍有良好密實 的介面(interface)。另外,在進行上述熱壓合步驟前,可先 利用電鍍、濺鍍、旋塗、溶液彼覆或粉末披覆等非電沈積 方法在該微粗糙面210及241上形成一抗氧化層防止氧化, 以加強其與導熱高分子介電材料層23之結合強度。該抗氧 1270187 化層之材質通常可選料、鉻、_、銀與其合金等導熱係 數大於l.GW/mK之材料。該微粗趟面21()及⑷亦可塗上一 層化學藥劑(如··偶合劑silane)或經由一表面處理方式(如電 漿或電暈放電(C一))以便加強與該導熱_ 層23之結合力,達到穩定的導熱性質。3 Referring to Fig. 1, due to the high thermal conductivity of the metal, the conventional heat dissipation is set to 1 〇 mainly using the metal heat sink 14 to dissipate heat. However, since the metal is not only thermally conductive but also electrically conductive, the heat dissipating device 1G has a conductive positive electrode (the first electrode (1) 11 is provided with a dielectric layer 13 between the heat sinks I4 to prevent short circuit, the dielectric layer 13 Generally, any material containing dielectric properties, such as Shiyang, Oxidation Dream, Bakelite or Insulating Plastic, etc. can be used. However, the dielectric layer 13 often appears to be incapable of rapidly dissipating heat to cause a heating element (such as a light-emitting diode). The problem of an increase in the operating temperature of the LED) causes the heating element to rapidly reduce xf卩 or the interface between the first electrode 11, the second electrode 12 and the dielectric layer 13, and the metal heat sink after several thermal shocks. 14 that the interface between the dielectric layer 13 and the dielectric layer 13 is too smooth, resulting in insufficient adhesion, and the thermal conductivity of the dielectric layer 13 is greatly reduced; or because the dielectric layer 13 and the metal electrode (the first electrode ^ and the The lack of sufficient bonding force between the two electrodes ι2) and the metal heat sink 14 causes the heat sink and the heat generating components contained therein to be damaged. SUMMARY OF THE INVENTION The main object of the present invention is to provide a heat sink and a system thereof. Method, Ρ28532 106688 005012201 1270187 The use of a two metal and a rough surface between the heat sink and the layer of the thermally conductive polymer dielectric material is turned into a heat sink with high bonding strength and high heat dissipation efficiency, and the dream is to quickly reduce the load on it. The heat generating device (for example, the light emitting diode) extends the service life of the heat generating component and improves the reliability thereof. To achieve the above object, the present invention discloses a heat dissipating device including a first electrode foil and a second An electrode foil, a heat sink and a thermal conductive high-level=dielectric material layer. The two metal foil and the metal heat sink comprise at least one micro-rough surface, the micro-rough surface comprising a plurality of knobs (n〇dule), It can be formed by an electroposition. The layer of the thermally conductive polymer dielectric material is between the two metal foils and the metal heat sink and has a high thermal conductivity (>l, 〇W/mK). The upper and lower surfaces physically contact the two metal boxes and the heat sink with a micro-rough surface. For the manufacturing method, a metal foil and a heat sink are first provided, and the metal is placed on the heat sink. The surface comprises at least one micro-rough surface which can be formed by electroforming (electrodep〇siti〇n) to form a plurality of knob-like protrusions. Secondly, a thermally conductive polymer dielectric material is laminated to the metal. Between the foil and the hot sheet, the at least one micro-rough surface is in physical contact with the upper and lower surfaces of the layer of the thermally conductive polymer material, wherein the thermal conductivity of the layer of the thermally conductive polymer material is greater than the UW/shirt ^, money engraved the metal to form a first electrode box and a second electrode box for electrical separation. In addition, in order to increase the welding strength of the electrode and prevent oxidation, the first electrode box and the second electrode may be The swash surface forms a first plating layer and a second plating layer, respectively. The first plating layer, the second plating layer, the first metal layer, the second metal layer, the heat conductive polymer dielectric material layer and the metal heat sink 6 6 P28532 106688 〇〇 5〇 122〇 1 1270187 The punch can be punched and cut, and a specific shape is cut out for use. [Embodiment] Hereinafter, a detailed manufacturing process of the heat dissipation device of the present invention will be described by way of drawings. Referring to Fig. 2, first, a metal (4) and a metal heat sink ^ are provided, wherein the upper metal sheet 21 and the metal heat sink 24 respectively include a micro-rough surface 210 and 241. The micro-rough surfaces 21〇 and 241 are formed by an electric method, and the surface thereof includes a plurality of knob-like protrusions 25〇, and the size of the knob-like protrusions 25〇 is between 1 μm and 100 μm. . The material of the upper metal foil 21 is mainly copper, aluminum or nickel, and other metals or alloys or a plurality of composite metals such as nickel-plated copper foil and nickel-copper rolled foil may be used. The material of the metal heat sink 24 may be selected from copper or aluminum. Thereafter, a layer of thermally conductive polymer dielectric material 23 is thermocompression bonded between the upper metal foil 21 and the metal heat sink 24 to form a multilayer laminated structure as shown in FIG. The micro-rough surfaces 210 and 241 are in physical contact with the upper surface and the lower surface of the thermally conductive polymer dielectric material layer 23, wherein the micro-rough surfaces 21 and 241 of the knob-like protrusions 250 are embedded in the thermally conductive polymer dielectric. The mechanical interlocking is formed in the material layer 23, so that the upper metal 21, the metal heat sink 24 and the intermediate layer of the thermally conductive polymer dielectric material 23 have a very strong bonding force even in the hot and cold temperature. There is still a good interface. In addition, before the hot pressing step, an anti-oxidation layer may be formed on the micro-rough surfaces 210 and 241 by electroless deposition such as electroplating, sputtering, spin coating, solution coating or powder coating to prevent oxidation. To strengthen the bonding strength with the layer of the thermally conductive polymer dielectric material 23. The material of the anti-oxidation 1270187 layer is usually selected from materials such as chromium, _, silver, and alloys thereof, which have a thermal conductivity greater than l.GW/mK. The micro-rough surface 21() and (4) may also be coated with a chemical agent (such as a coupling agent silane) or via a surface treatment method (such as plasma or corona discharge (C-1)) to strengthen the heat conduction. The bonding force of layer 23 achieves stable thermal conductivity.

該導熱高分子介電材料層23係以高分子材料及至少一高 導熱介電填充料以適當比例加熱混鍊再以滾壓形成,其中 高分子材料因比其他金屬或陶究材料容易處理及加工,、且 其本身已具有介電性質,因此適合作為該導熱高分子介電 材料層23之基材。幾乎大部份高分子材料都可被使用在此 應用上,並不限定在以下所列舉的材料··橡膠材料(例如·· 天然橡膠、矽膠、異丁烯膠、SBS或液態橡膠CTBN等)、熱 塑型塑膠(例如:環氧樹酯(epoxy)、聚醯胺(p〇lyurethane) 或聚酯類(polyester)等)或熱固型塑膠(例如:聚乙烯 (polyethylene)、聚氟化亞乙烯(p〇iyVinylidene flu〇ride)、聚 丙烯(polypropylene)、尼龍(Nylon)、聚酯類(p〇lyester)、abs 塑膠或其共聚物。另上述述之熱固型塑膠亦可含功能基 如:胺基、酸基、_基、醇基及環氧基等)。關於高導熱介 電填充料則可選用一種或數種導熱係數大於i ·0ψ/ηιΚ之材 料,其導熱係數之較佳值係大於5.0W/mK,最佳值係大於 10 W7mK。該高導熱介電填充料之體積電阻值需大於 l〇8Q-cm,較佳值係大於i〇1GQ-cm,最佳值係大於 l〇12Q-cm。通常該高導熱介電填充料所佔該導熱高分子介 電材料層23之體積比係介於20%至90%之間,較佳值係介於 P28532 1〇6688 005012201 1270187 30%至80%之間,最佳值係介於4〇%至7〇%之間。其含量兪 多,該導熱高分子介電材料層23之導熱程度就愈佳。該高 導熱介電填充料主要係金屬氮化物,如氮化鋁、氮化硼等。 其他如金屬氧化物、金屬硼化物、金屬鹽類、金屬碳化物、 矽化合物及石墨等亦可選用為高導熱介電填充料。有時為 特殊用途亦會添加其他如抗氧化劑、防潮劑等,只要混合 後之高導熱高分子介電材料層23具有散熱功能(即導熱係 _ 數大於l.OW/mK)即可。 另,該咼導熱介電填充料可為粉末形式,其形狀可呈現 出多種不同樣式及結晶之顆粒,例如球體型(spherical)、方 體型(cubic)、方體型(cubic)、六面體型(hexag〇nal)、片狀 i (flake)夕角型、尖刺型(Spiky)、柱狀型(r〇d)、珊蝴型、 瘤狀型(nodular)及絲線型(filament)等,且其主要粒徑介於 0.01至30 V m之間,較佳粒徑係介於01至1〇 # m之間。其主 要縱橫比(aspect ratio)小於1 〇〇。 • 在圖3所示之多層結構中,該導熱高分子介電材料層23 可以疋複數個導熱高分子介電材料子層所疊壓而形成,其 總厚度介於0,01mm至5mm之間,較佳厚度是0e05mm至lmm 之間,最佳厚度是0.1mm至〇.5mm之間。另,該導熱高分子 ’丨電材料層23之顏色主要視該高導熱介電填充料之顏色而 定,亦可添加其他不同顏色之填充料或顏料或特殊光學粉 末(如··螢光粉),以達到特定應用所需之顏色及功能,一般 而言,在發光二極體之應用上較常使用之顏色是白色。 參照圖4 ’接著將該上金屬箔21以蚀刻或精密雕刻方法 1270187The thermally conductive polymer dielectric material layer 23 is formed by heating a mixed chain with a polymer material and at least one high thermal conductive dielectric filler in an appropriate ratio and then rolling, wherein the polymer material is easier to handle than other metals or ceramic materials. It is processed, and has its own dielectric properties, and is therefore suitable as a substrate for the thermally conductive polymer dielectric material layer 23. Almost all of the polymer materials can be used in this application, and are not limited to the materials listed below. · Rubber materials (for example, natural rubber, silicone rubber, isobutylene rubber, SBS or liquid rubber CTBN, etc.), heat Plastic plastic (for example: epoxy, p〇lyurethane or polyester) or thermosetting plastic (for example: polyethylene, polyvinylidene fluoride) (p〇iyVinylidene flu〇ride), polypropylene, nylon (Nylon), polyester (p〇lyester), abs plastic or copolymers thereof. The above-mentioned thermosetting plastics may also contain functional groups such as : an amine group, an acid group, a benzyl group, an alcohol group, an epoxy group, etc.). For high thermal conductivity dielectric fillers, one or more materials having a thermal conductivity greater than i·0ψ/ηιΚ may be used, and the preferred value of the thermal conductivity is greater than 5.0 W/mK, and the optimum value is greater than 10 W7 mK. The volume resistance of the high thermal conductivity dielectric filler needs to be greater than l〇8Q-cm, the preferred value is greater than i〇1GQ-cm, and the optimum value is greater than l〇12Q-cm. Generally, the high thermal conductive dielectric filler occupies between 20% and 90% by volume of the thermally conductive polymer dielectric material layer 23. The preferred value is between P28532 1〇6688 005012201 1270187 30% to 80%. Between the best values is between 4〇% and 7〇%. The content of the thermally conductive polymer dielectric material layer 23 is preferably as good as that of the conductive polymer layer 23. The high thermal conductivity dielectric filler is mainly a metal nitride such as aluminum nitride, boron nitride or the like. Others such as metal oxides, metal borides, metal salts, metal carbides, antimony compounds and graphite may also be selected as high thermal conductivity dielectric fillers. Sometimes, for special purposes, other antioxidants, moisture-proofing agents, and the like may be added as long as the highly thermally conductive polymer dielectric material layer 23 after mixing has a heat-dissipating function (i.e., the thermal conductivity _ number is greater than l.OW/mK). In addition, the tantalum heat conductive dielectric filler may be in the form of a powder, and the shape thereof may exhibit a plurality of different patterns and crystallized particles, such as a spherical, cubic, cubic, and hexahedral type ( Hexag〇nal), flaky i (flake) horn type, spiked type (Spiky), columnar type (r〇d), smear type, nodular type, and filament type, and The main particle size is between 0.01 and 30 V m, and the preferred particle size is between 01 and 1 〇 # m. Its main aspect ratio is less than 1 〇〇. In the multilayer structure shown in FIG. 3, the thermally conductive polymer dielectric material layer 23 can be formed by laminating a plurality of sublayers of a thermally conductive polymer dielectric material having a total thickness of between 0,01 mm and 5 mm. Preferably, the thickness is between 0e05 mm and 1 mm, and the optimum thickness is between 0.1 mm and 〇.5 mm. In addition, the color of the conductive polymer layer 23 is mainly determined by the color of the high thermal conductive dielectric filler, and other fillers or pigments of different colors or special optical powders (such as fluorescent powder) may be added. In order to achieve the color and function required for a particular application, in general, the color commonly used in the application of light-emitting diodes is white. Referring to FIG. 4', the upper metal foil 21 is then etched or precision engraved 1270187

形成彼此電氣分離之一第一電極箔211及一第二電極箔 212’其中該第一電極箔211包含與該導熱高分子介電材^ 層23接觸之一第一微粗糙面2101,該第二電極箔212包含 與該導熱高分子介電材料層23接觸之_第二微粗輪: 2102。該第-電極箱211及該第二電極猪212係作為連接 一發熱元件(例如:發光二極體)之電極,以形成一導電迴路 (圖未不)。至此即形成本發明之散熱裝置該金屬散熱 片24為要達到高散熱效果以及提供堅固不易變形之結構, 通常選用稍厚(大於0.05mm)之金屬箔,較佳厚度是〇 至5.0随,最佳厚度是〇1〇mm至丨〇mm。該金屬散熱片 24包含一第三微粗糙面24〇 ’藉由該第三微粗糙面2牝與 該導熱高分子介電材料層23結合。該金屬散熱片24之材 料y選用導熱性佳的金屬材料,例如:紹、銅、鎮及其合 金等。為要防止金屬表面在高温下產生氧化反應,該金屬 散熱:24之表面可鍍上一層鎳、鋅、鉻、錫、銀或金。於 另一貫施例中’為了強化散熱功能,在該金屬散熱片24之 底部,亦可用錫膏塗佈及迴焊之方式加焊上一下層散熱片 (圖未示),此加焊上之該下層韻片材質可以是金屬、陶竟 或其他導熱材料。 於另-實施例中可將如圖3所示之多層結構(包含該上金 屬箱h、該導熱高分子介電材料層23及該金屬散熱片岣 以飿刻、鑽孔研磨、熱成型(the_l f_ing)或段差冲壓方 式,將其產生一三度空間(3D)形狀,該三度空間形狀之凹 下#位可以作為產生電極之連接處,亦可將—發熱裝置放 P28532 1〇6688 005012201 •10- 1270187 置於此凹下部位,並填充覆蓋物質如螢光粉等。另,該下 層散熱片若使用金屬材質,則可以將該下層金屬散熱片之 表面以電腦數值控制工具機(CNC)以鑽研,沖壓或蝕刻等方 式,將其表面產生一 3D凹陷部,再將該上層金屬箔21與 該導熱高分子介電材料層23嵌入該3D凹陷部,發熱元件 亦可置於該3D凹陷部。該3D凹陷部可產生粗糙表面以便 與該導熱高分子介電材料層23產生較強的結合力。該3d 凹部表面亦可披覆一層鎳或金電鍍層,以便於與發熱元 件之底部結合。 實際上,本發明散熱裝置之下層散熱片之材質並不限為 金屬,其他具散熱功能之材質亦可為本發明所使用。 圖5係本發明另一實施例中之散熱裝置示意圖,其係基 於圖4所不之結構以電鍍(electr〇piati%)或濺鍍㈣以如丨%) 方法在該第-電極帛211及該第=電極%2i2 t表面分別 鍍上一第一電鍍層221及一第二電鍍層222,其材料可為金 屬如金銀、銅、錫、鋅或鉻等,以增加該二金屬箔2 i丄 及212與该發熱元件焊接之強度並可預防該第一電極箔 、及忒第_電極箔212之氧化。據此,即可形成一可供承 2發熱元件(圖未示)之散熱裝置20,。之後,將具有特定功 能^電子元件等發熱元件3〇(如LED晶片)置於本發明之散 熱袭且2〇,上,並以具導電功能之金屬線(或金屬片)31及 2以焊接方法連接至該第一電鍍層221及該第二電鍍層 人專電鍍層221及該第二電鍍層222係分別電連接 電源之正、負極’而形成一如圖6所示之具高散熱能力 P28532 1〇6688 005012201 1270187 2子疋件導電迴路40。另外,可在該發熱元件3〇與該導 :’分子介電材料層23之間塗上一層散熱膏Μ以增加彼 此間之附著力。 為了特定之應用場合,可將圖5之散熱裝置2〇,利用模具 (例如沖床)沖切、晶圓切割或曲線切割等方式製成具特定形 狀之散熱裝置。 j散熱片24、第一電極箔211及第二電極箔212與該導 熱高^子介電材料層23間之介面並不需均為微粗糙面,只 要该等介φ +包含至少一微粗糙面,gp可某程度達到提高 結合強度和散熱效率的效果。 本發明之散熱裝置應用在一發熱元件(如:LED)時(如圖6 之配置)’該發熱元件產生之熱量可經本發明之散熱裝置傳 導至周圍環境中而達到熱平衡,此散熱功能使發熱元件之 度被控制在特定溫度之下,而使發熱元件不致於因過熱 而損毀。另外因本發明之散熱裝置經常在加熱和冷卻之循 環操作之下,藉由至少一具複數個瘤狀突出物之微粗糙面 之一金屬V自及金屬散熱片與一導熱高分子介電材料層壓 合,使得在金屬箔、導熱高分子介電材料層、及金屬散熱 片之介面,不會因結合力不足而產生剝離。因此本發明之 散熱裝置確可達到提供一具高結合強度及高散熱效率之散 熱裝置’以及延長發熱元件之使用壽命及提高其可靠度之 預期目的。 本發明之技術内容及技術特點已揭示如上,然而熟悉本 項技術之人士仍可能基於本發明之教示及揭示而作種種不 P28532 106688 〇〇5〇122〇1 1270187 背離本發明精神之替換及修飾。因此,本發明之保護範圍 應不限於實施例所揭示者,而應包括各種不背離本發明之 替換及修飾,並為以下之申請專利範圍所涵蓋。Forming a first electrode foil 211 and a second electrode foil 212' electrically separated from each other, wherein the first electrode foil 211 includes a first micro-rough surface 2101 contacting the thermally conductive polymer dielectric layer 23, the first The two-electrode foil 212 includes a second micro-grinding wheel: 2102 in contact with the thermally conductive polymer dielectric material layer 23. The first electrode box 211 and the second electrode pig 212 are connected to electrodes of a heat generating component (for example, a light emitting diode) to form a conductive loop (not shown). Thus, the heat sink of the present invention is formed. The metal heat sink 24 is designed to achieve a high heat dissipation effect and to provide a strong and non-deformable structure. Generally, a metal foil having a relatively thick thickness (greater than 0.05 mm) is preferably used, and the thickness is preferably 5.0 to 5.0. The good thickness is 〇1〇mm to 丨〇mm. The metal heat sink 24 includes a third micro-rough surface 24'' joined to the thermally conductive polymer dielectric material layer 23 by the third micro-rough surface 2'. The material y of the metal heat sink 24 is made of a metal material having good thermal conductivity, such as: Shao, Tong, Zhen and its alloy. In order to prevent the metal surface from oxidizing at a high temperature, the metal heat dissipation: 24 may be coated with a layer of nickel, zinc, chromium, tin, silver or gold. In another embodiment, in order to enhance the heat dissipation function, at the bottom of the metal heat sink 24, a lower layer heat sink (not shown) may be soldered by solder paste coating and reflow soldering, which is soldered. The material of the lower layer can be metal, ceramic or other heat conductive material. In another embodiment, a multilayer structure as shown in FIG. 3 (including the upper metal case h, the thermally conductive polymer dielectric material layer 23, and the metal heat sink 岣 can be etched, drilled, and thermoformed ( The_l f_ing) or the stepwise stamping method, which produces a three-dimensional (3D) shape, the recessed # position of the three-dimensional shape can be used as a connection for generating electrodes, or the heat generating device can be placed P28532 1〇6688 005012201 • 10-1270187 is placed in this concave part and filled with covering material such as phosphor powder, etc. If the lower heat sink is made of metal, the surface of the lower metal heat sink can be used as a computer numerical control machine (CNC). a 3D depressed portion is formed on the surface by drilling, stamping or etching, and the upper metal foil 21 and the thermally conductive polymer dielectric material layer 23 are embedded in the 3D depressed portion, and the heating element can also be placed in the 3D. The recessed portion can generate a rough surface to generate a strong bonding force with the thermally conductive polymer dielectric material layer 23. The surface of the 3d recess can also be coated with a layer of nickel or gold to facilitate the heating element. bottom In fact, the material of the heat sink of the heat sink of the present invention is not limited to metal, and other materials having heat dissipation function can also be used for the present invention. FIG. 5 is a schematic diagram of a heat sink according to another embodiment of the present invention. It is plated with a first plating on the surface of the first electrode 211 and the second electrode %2i2 t by electroplating or plating (4) according to the structure of FIG. The layer 221 and a second plating layer 222 may be made of a metal such as gold, silver, copper, tin, zinc or chromium to increase the strength of the soldering of the two metal foils 2 and 212 and the heat generating component and prevent the first Oxidation of an electrode foil and a first electrode foil 212. Accordingly, a heat sink 20 for forming a heat generating component (not shown) can be formed. After that, a heat generating component (such as an LED chip) having a specific function, such as an electronic component, is placed on the heat sink of the present invention, and is soldered with metal wires (or metal sheets) 31 and 2 having conductive functions. The method is connected to the first plating layer 221 and the second plating layer, and the second plating layer 222 is electrically connected to the positive and negative electrodes of the power source respectively to form a high heat dissipation capability P28532 as shown in FIG. 1〇6688 005012201 1270187 2 sub-piece conductive loop 40. Alternatively, a layer of heat-dissipating paste may be applied between the heat-generating element 3 and the layer of the molecular dielectric material 23 to increase the adhesion therebetween. For a specific application, the heat sink of Fig. 5 can be fabricated by means of die (e.g., punch) punching, wafer cutting or curve cutting to form a heat sink having a specific shape. The interface between the heat sink 24, the first electrode foil 211 and the second electrode foil 212 and the layer of the thermally conductive dielectric material 23 need not be a rough surface, as long as the dielectric φ+ contains at least one micro roughness. Face, gp can achieve the effect of improving the bonding strength and heat dissipation efficiency to some extent. When the heat dissipating device of the present invention is applied to a heat generating component (such as an LED) (as shown in FIG. 6), the heat generated by the heat generating component can be conducted to the surrounding environment through the heat dissipating device of the present invention to achieve heat balance, and the heat dissipating function causes heat generation. The degree of the component is controlled below a certain temperature so that the heating element is not damaged by overheating. In addition, the heat dissipating device of the present invention is often subjected to a heating and cooling cycle operation, and at least one of the micro-rough surfaces of the plurality of knob-like protrusions is a metal V and a metal heat sink and a heat conductive polymer dielectric material. The laminate is laminated so that the interface between the metal foil, the layer of the thermally conductive polymer dielectric material, and the metal heat sink does not cause peeling due to insufficient bonding force. Therefore, the heat dissipating device of the present invention can achieve the intended purpose of providing a heat dissipating device with high bonding strength and high heat dissipating efficiency, and prolonging the service life of the heating element and improving its reliability. The technical content and technical features of the present invention have been disclosed as above, but those skilled in the art may still make various alternatives and modifications from the spirit of the present invention based on the teachings and disclosures of the present invention. P28532 106688 〇〇5〇122〇1 1270187 . Therefore, the scope of the present invention should be construed as being limited by the scope of the appended claims.

P28532 1〇6688 005012201 -13· 1270187 【圖式簡單說明】 圖1係習知之散熱裝置之結構示意圖; 圖2至4顯示本發明—實施例之散熱裝置之製作方法; 圖5係本發明另一實施#j n ^ # 散熱震置之結構示意圖;以及 圖6例不本發明之散 Γ± Φ …、裝置、、、。合發熱元件之應用示意圖。 【主要疋件符號說明】P28532 1〇6688 005012201 -13· 1270187 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a conventional heat dissipating device; FIGS. 2 to 4 show a manufacturing method of a heat dissipating device according to the present invention; FIG. 5 is another embodiment of the present invention; Implementation #jn ^ # Schematic diagram of the heat sinking; and Figure 6 is not the divergence of the present invention ± Φ ..., device,,,. Schematic diagram of the application of the heating element. [Main component symbol description]

10 12 14 20 23 散熱裝置 第二電極 金屬散熱片 散熱裝置 11 13 21 第一電極 介電層 散熱裝置 上金屬箔 導熱高分子介電材料層 24 金屬散熱片 31 金屬線 33 散熱膏 210 微粗缝面 212 第一電極箱 222 第二電鍍層 241 微粗糖面 2101 第一微粗糙10 12 14 20 23 Heat sink second electrode metal heat sink heat sink 11 13 21 First electrode dielectric layer heat sink on metal foil thermal conductive polymer dielectric material layer 24 Metal heat sink 31 Metal wire 33 Thermal grease 210 Face 212 first electrode box 222 second plating layer 241 micro coarse sugar surface 2101 first micro-rough

3〇 發熱元件 32 金屬線 40 導電迴路 211第一電極箔 221第一電鍍層 240第三微粗键面 250 瘤狀突出物 2102第一微粗链面 P28532 106688 〇〇5〇122〇1 -14-3〇heating element 32 metal wire 40 conductive circuit 211 first electrode foil 221 first plating layer 240 third micro-thick key surface 250 knob-like protrusion 2102 first micro-thick chain surface P28532 106688 〇〇5〇122〇1 -14 -

Claims (1)

1270187 十、申請專利範圍: 1 · 一種散熱裝置,包含: 一散熱片; 一第一電極箔; -第一電極箔’與該第一電極箔係電氣分離;以及 一導熱南分子介電材料層,其導熱係數大於ΐ()·κ, 且且叹於4第一及第二電極箔與該散熱片之間形成物理 接觸,該導熱高分子介電材料層與該第一、第二電極猪和 散熱片間之介面包含至少一微粗糙面。 2·根據睛求項1之散熱装置,其中該微粗糖面包含複數個瘤 狀突出物。 3.根據請求項2之散熱裝置,其中該瘤狀突出物係由電著法 所形成。 4· 5·1270187 X. Patent application scope: 1 · A heat dissipating device comprising: a heat sink; a first electrode foil; - a first electrode foil 'separably electrically separated from the first electrode foil; and a heat conducting south molecular dielectric material layer The thermal conductivity is greater than ΐ()·κ, and the physical contact between the first and second electrode foils and the heat sink is formed, and the thermally conductive polymer dielectric material layer and the first and second electrode pigs The interface between the heat sink and the heat sink comprises at least one slightly rough surface. 2. The heat sink of claim 1, wherein the micro-sweet side comprises a plurality of knob-like protrusions. 3. The heat sink according to claim 2, wherein the knob-like projection is formed by an electrical method. 4· 5· 6. 根據請求項2之散熱裝置,其中該瘤狀突出物之大小係分 佈於0·1微米至1〇〇微米之間。 根ί項1之散熱裝置’其中該第-電極箔及該第二電 極箔係藉由一金屬箔經蝕刻分離而成。 根據請求項1之散熱裝置,其另包含-第-電鍍層及_第 -電鍍層’其係分別位於該第—電極箱及 表面以供焊接時增加強度之用。 " :Μ“求項1之散熱裝置’其中該第-電極箔及該第二電 才虽岛串接》— Φ « 電源及一發熱元件形成導電迴路。 8·,求項7之散熱裝置,其中該發熱元件係一發光二極 1270187 9·根據明求項1之散熱裝置,其中該導熱高分子介電材料層 包3至>一尚導熱介電填充料。 i〇H求項9之散熱裝置,其中該高導熱介電填充料係氮 化銘或氮化爛。 11 ·根據明求項9之散熱裝置,其中該高導熱介電填充料之導 熱係數大於10.0W/mK。 12,根據請求項9之散熱裝置,其中該高導熱介電填充料佔該 φ 導”、、同刀子介電材料層之體積百分比係介於40%至70% 之間。 根據明求項1之散熱裝置,其中該散熱片之材質係銅或 铭。 14·根據請求項1之散熱裝置’其中該導熱高分子介電材料層 包含複數個導熱高分子介電材料子層。 15·根據請求項1之散熱裝置’其中該微粗糙面包含一抗氧化 層。 # 16.根據請求項】之散熱裝置,其中該散熱片之厚度大於 0.05mm。 17, 一種散熱裝置之製造方法, 提供一金屬箔及一散熱片 之一表面係微粗糙面; 包含以下步驟: ,且至少該金屬箔及散熱片 將-導熱高分子介電材料層熱壓合於該金屬搭及散敎 片之間,使得該微㈣面與該導熱高分子介電材料層形成 物理接觸,其中該導熱高分子介電材 ,Λ_7 电何枓層之導熱係數大於 l,0W/mK ;以及 P28532 106688 005012201 -16 1270187 餘刻該金屬箔以形成電氣分譃之〜 札刀雖I 弟一電極箔及一第 -電極猪。 18·根據請求項17之散熱裝置之製造方法,其另 驟:在該第一電極箔及該第二電極箔之表面 第一電鍍層及一第二電鍍層。 1 9·根據請求項18之散熱裝置之製造方法,其另 第一電鍍層、第二電鍍層、第一電極箔、第 _ 金屬散熱片及該導熱高分子介電材料層之步 一具特定形狀之散熱裝置。 20·根據請求項19之散熱裝置之製造方法 沖切方式。 21·根據請求項17之散熱裝置之製造方法 包含複數個瘤狀突出物。 22·根據請求項21之散熱裝置之製造方法 物係由電著法所形成。 鲁 23·根據請求項21之散熱裝置之製造方法 包含以下步 分別形成一 包含切割該 二電極箔、 驟,以形成 其中該切割係採 其中該微粗糙面 其中該瘤狀突出 物之大小係分佈於〇· 1微米至1 〇〇微米之0 其中該瘤狀突出 P28532 106688 〇〇5〇122〇1 •17-6. The heat sink according to claim 2, wherein the size of the knob is between 0. 1 micron and 1 micron. The heat sink of the item 1 wherein the first electrode foil and the second electrode foil are separated by etching a metal foil. The heat sink according to claim 1, further comprising - a - plating layer and a - plating layer - respectively located on the first electrode case and the surface for increasing strength when soldering. " : Μ "Solution 1 of the heat sink" where the first electrode foil and the second electricity are connected in series - Φ « Power supply and a heating element form a conductive loop. 8 ·, Item 7 heat sink Wherein the heating element is a light-emitting diode 1270187. The heat-dissipating device according to claim 1, wherein the thermally conductive polymer dielectric material layer 3 to > is still a heat-conductive dielectric filler. i〇H item 9 The heat dissipating device, wherein the high thermal conductive dielectric filler is nitrided or nitrided. 11. The heat dissipating device according to claim 9, wherein the high thermal conductivity dielectric filler has a thermal conductivity greater than 10.0 W/mK. The heat sink according to claim 9, wherein the high thermal conductive dielectric filler occupies the φ derivative, and the volume percentage of the same dielectric material layer is between 40% and 70%. The heat sink according to claim 1, wherein the heat sink is made of copper or copper. The heat dissipating device according to claim 1, wherein the thermally conductive polymer dielectric material layer comprises a plurality of sublayers of a thermally conductive polymer dielectric material. A heat sink according to claim 1, wherein the micro-rough surface comprises an oxidation resistant layer. # 16. According to the claim item, the heat sink has a thickness greater than 0.05 mm. The method for manufacturing a heat dissipating device, wherein a surface of a metal foil and a heat sink is slightly roughened; and the method comprises the following steps: and at least the metal foil and the heat sink thermally press-bond the layer of the heat conductive polymer dielectric material Between the metal and the entangled sheet, the micro (four) surface is in physical contact with the layer of the thermally conductive polymer dielectric material, wherein the thermal conductive polymer dielectric material, the thermal conductivity of the Λ_7 electric layer is greater than l, 0W /mK ; and P28532 106688 005012201 -16 1270187 The metal foil is engraved to form an electrical split ~ Although the knife is an electrode foil and a first electrode pig. 18. The method of manufacturing a heat sink according to claim 17, further comprising: a first plating layer and a second plating layer on the surfaces of the first electrode foil and the second electrode foil. According to the manufacturing method of the heat sink of claim 18, the steps of the first plating layer, the second plating layer, the first electrode foil, the _ metal heat sink, and the heat conductive polymer dielectric layer are specific Shape heat sink. 20. The method of manufacturing a heat sink according to claim 19, the die cutting method. 21. The method of manufacturing a heat sink according to claim 17, comprising a plurality of knob-like protrusions. 22. The method of manufacturing a heat sink according to claim 21, wherein the system is formed by an electric method. The manufacturing method of the heat sink according to claim 21, comprising the steps of: forming a second electrode foil, and forming a step, wherein the cutting system adopts the micro-rough surface, wherein the size of the knob-like protrusion is distributed 〇··1 μm to 1 〇〇 micron 0 where the knob-like protrusion P28532 106688 〇〇5〇122〇1 •17-
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