CN100462823C - 薄膜晶体管及其电子器件和制造方法 - Google Patents

薄膜晶体管及其电子器件和制造方法 Download PDF

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CN100462823C
CN100462823C CNB2003101249028A CN200310124902A CN100462823C CN 100462823 C CN100462823 C CN 100462823C CN B2003101249028 A CNB2003101249028 A CN B2003101249028A CN 200310124902 A CN200310124902 A CN 200310124902A CN 100462823 C CN100462823 C CN 100462823C
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protective coating
semi
conductor chip
ultraviolet
thin
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CN1527115A (zh
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金道映
朴玩濬
朴永洙
李俊冀
闵约赛
权章渊
徐顺爱
崔荣敏
蔡洙杜
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Samsung Electronics Co Ltd
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Abstract

提供一种在柔性基底上实现的薄膜半导体器件、使用该器件的电子器件、及其制造方法。该薄膜半导体器件包括一柔性基底、一形成在柔性基底上的半导体芯片、一密封该半导体芯片的保护盖层、以及一形成在该保护盖层上的绝缘区。该电子器件包括一柔性基底和形成在柔性基底上的半导体芯片，还包括密封半导体芯片的保护盖层和形成在该保护盖层上的绝缘区。由于使用了保护盖层，提高了薄膜半导体器件抵抗基底弯曲所产生的应力的耐用性。

Description

薄膜晶体管及其电子器件和制造方法
技术领域
本发明涉及薄膜半导体器件和使用该薄膜半导体器件的电子器件及其制造方法，尤其涉及安装于柔性基底上的具有改善的耐用性的薄膜半导体器件和使用该薄膜半导体器件的电子器件及其制造方法。
背景技术
传统的平板显示装置如薄膜晶体管液晶显示器(TFT-LCD)或薄膜晶体管有机发光二极管(TFT-OLED)，通常是在玻璃基底上形成非晶硅TFT或多晶硅TFT的薄膜半导体器件。最近，替代平板显示装置玻璃基底的柔性基底如塑料基底的研究业已进行。平板显示器件用的柔性基底有耐用、重量轻、柔韧性等优点，以至于其可用于移动器件。然而，当半导体芯片在柔性基底上形成的情况下，由于柔性基底的弯曲或折叠，可能导致半导体芯片破裂。传统的TFT-LCD包括无机薄膜形成的多晶硅TFT。在这种情况下，由于TFT部分的弹性系数大，当TFT因柔性基底弯曲而发生轻微变形时，TFT-LCD则容易破裂。另一方面，由于TFT占据了单元像素总面积的大约1％，就应该防止TFT的变形以防止由柔性基底弯曲使TFT变形而引起的半导体器件的破损。
图1是用于防止TFT变形的传统的TFT-LCD结构的剖面图，其已在韩国专利No.2001-84247中公开。
参照图1，在柔性丙烯酸酯共聚物膜1内形成一结构，在托架(cradle)的下部上形成栅极电极5。介电材料例如氮化硅(SiN)或二氧化硅(SiO2)构成的绝缘层6形成于包含栅极电极5的基底1的上表面上。非晶硅构成的有源层10形成于绝缘层6的在栅极电极5上的部分上。另外，为了露出有源层10，掺杂了n型或p型离子的硅层12和13形成于有源层10的拐角和栅极电极5上的绝缘层6上。漏极电极14和源极电极15分别形成于掺杂硅层12和13上。金属层16、17分别与漏极电极14和源极电极15连接，该金属层16和17延伸漏极电极14并把源极电极15连接至该结构侧壁，用来平坦化基底1的介电材料18形成在整个该结构上。
传统TFT包括托架结构以分散因基底1的弯曲而导致的应力。然而，由于形成TFT的薄膜的高弹性系数，外部应力集中于该薄膜上，因此，托架结构导致的应力的分散是轻微的。换句话说，传统TFT不能补偿TFT的材料特性，所以不能提高包含TFT的电子器件的耐用性。
发明内容
本发明提供了一种薄膜半导体器件、使用该薄膜半导体器件的电子器件、以及其制造方法，该薄膜半导体器件具有防止柔性基底弯曲时薄膜半导体破裂的结构。
按照本发明的第一方面，提供一种薄膜半导体器件，其包括一柔性基底、一形成于该柔性基底上的半导体芯片、一密封该半导体芯片的保护盖层(protective cap)以及一形成在该保护盖层上的绝缘区。
按照本发明的第二方面，提供一种电子器件，其包括一柔性基底和形成于柔性基底上的半导体芯片。该电子器件还包括一密封该半导体芯片的保护盖层和一形成在该保护盖层上的绝缘区。
保护盖层的抗拉强度优选大于30GPa。
保护盖层的硬度优选大于200。
保护盖层可以形成在半导体芯片的上表面上。作为选择地，保护盖层可以形成于半导体芯片的上表面上、以及半导体芯片和柔性基底之间。
半导体芯片可以是TFT、TFD和MIM中的任意一种。
保护盖层可以由紫外固化树脂、X射线固化材料、电子束固化材料和离子束固化材料中的任一种构成。
柔性基底可由塑料和薄金属膜中的任一种构成。作为选择地，柔性基底为厚度小于100μm的玻璃基底。
薄膜半导体器件可进一步包括连接于半导体芯片的液晶显示器(LCD)或有机发光二极管(OLED)。
按照本发明的第三方面，提供了一种电子器件的制造方法，包括:(a)在柔性基底上制造一薄膜半导体芯片；(b)涂敷一保护盖层以密封该半导体芯片；(c)在基底上沉积一绝缘层以覆盖该保护盖层；(d)在半导体芯片的上表面中形成一贯通该绝缘层和该保护盖层的接触孔；以及(e)通过接触孔形成一与半导体芯片电连接的电极，且在电极上形成一由该半导体芯片驱动的被驱动单元(driven unit)。
此处，步骤(b)包括旋涂紫外固化树脂至半导体芯片，以低温烘焙该紫外固化树脂，辐照紫外光线至一指定部位，执行显影工艺去除剩余的紫外固化树脂，以及执行高温加热工艺形成保护盖层。
此处，步骤(c)包括对保护盖层实施氩等离子体处理后在基底上沉积一绝缘层。
按照本发明的第四方面，提供一种电子器件的制造方法，包括:(a)在柔性基底上制造一薄膜半导体芯片；(b)涂敷一保护盖层以密封该半导体芯片；(c)在半导体芯片的上表面中形成一贯通该保护盖层的接触孔；以及(d)通过接触孔形成一与半导体芯片电连接的电极，且在电极上形成一由该半导体芯片驱动的被驱动单元。
保护盖层可以由紫外固化树脂、X射线固化材料、电子束固化材料和离子束固化材料中的任一种构成。
此处，步骤(b)包括旋涂紫外固化树脂至半导体芯片，以低温烘焙该紫外固化树脂，辐射紫外光线至半导体芯片的指定部位，执行显影工艺去除剩余的紫外固化树脂，以及执行高温加热工艺形成保护盖层。
按照本发明的第五方面，提供一种电子器件的制造方法，包括:(a)在柔性基底上涂敷一第一保护盖层，并构图该第一保护盖层为预定图形；(b)在第一保护盖层上制造一薄膜半导体芯片；(c)涂敷一第二保护盖层来密封该半导体芯片，在基底和第二保护盖层上沉积一绝缘层；(d)形成一贯通绝缘层和第二保护盖层至半导体芯片上表面的接触孔；以及(e)形成一通过接触孔与半导体芯片电连接的电极；以及(f)在电极上形成一由半导体芯片驱动的被驱动单元。
此处，步骤(a)包括旋涂紫外固化树脂于基底上，以低温烘焙该紫外固化树脂，辐照紫外光线至基底的指定部位，执行显影工艺去除剩余的紫外固化树脂，执行高温加热工艺构图第一保护盖层。
此处，步骤(b)包括对第一保护盖层实施氩等离子体处理工艺后，制造薄膜半导体芯片。
步骤(c)包括旋涂紫外固化树脂于半导体芯片上，以低温烘焙该紫外固化树脂，辐照紫外光线至半导体芯片一指定部位，执行显影处理去除剩余的紫外固化树脂，执行高温加热处理形成第二保护盖层。
在基底和第二保护盖层上沉积绝缘层包括对第二保护盖层实施氩气等离子处理后，沉积该绝缘层。
按照本发明的第六方面，提供一种电子器件的制造方法，包括:(a)在柔性基底上涂敷一第一保护盖层，并构图该第一保护盖层为预定图形；(b)在第一保护盖层上制造一薄膜半导体芯片；(c)涂敷一第二保护盖层来密封该半导体芯片；(d)形成一贯通半导体芯片上表面中第二保护盖层的接触孔；以及(e)形成一通过接触孔与半导体芯片电连接的电极，且在电极上形成一由半导体芯片驱动的被驱动单元。
此处，步骤(a)包括旋涂紫外固化树脂于基底上，以低温烘焙该紫外固化树脂，辐照紫外光线至基底的指定部位，执行显影处理去除剩余的紫外固化树脂，执行高温加热处理构图第一保护盖层。
步骤(b)包括对第一保护盖层实施氩等离子处理工艺后，制造薄膜半导体芯片。
步骤(c)包括旋涂紫外固化树脂至半导体芯片上，低温烘焙该紫外固化树脂，辐照紫外光线至半导体芯片一指定部位，执行显影处理去除剩余的紫外固化树脂，执行高温加热处理形成一第二保护盖层。
在电子器件的所有上述制造方法中，保护盖层的抗拉强度优选大于30GPa。此外，该保护盖层的硬度优选大于200。柔性基底可以由塑料、薄金属膜和厚度小于100μm的玻璃基底中的任何一个构成。
半导体芯片可以是TFT、TFD、MIM中的任一种。
被驱动单元可以是LCD像素单元和OLED像素单元中的任何一种。
第一和第二保护盖层由诸如丙烯酸树脂及环氧树脂的紫外固化树脂构成。
本发明通过采用保护盖层来密封采用无机薄膜的半导体芯片，从而改进了薄膜半导体器件以及使用该器件的电子器件的耐用性。
附图说明
通过参照附图对本发明优选实施例的详尽描述，可以更清晰地展示本发明的上述及其它方面的优点，其中:
图1是韩国专利No.2001-84247公开的薄膜晶体管-液晶显示器(TFT-LCD)的剖面图；
图2是按照本发明第一实施例的作为半导体器件及使用其的电子器件的实例的TFT-LCD的剖面图；
图3A-3P为图2中TFT-LCD制造方法的剖面图；
图4是按照本发明第二实施例的作为半导体器件及使用其的电子器件的实例的TFT-LCD的剖面图；
图5A-5S为图4中TFT-LCD制造方法的剖面图；
图6是本发明第一实施例的作为半导体器件及使用其的电子器件的另一实例的TFT-LCD的剖面图；
图7是本发明第二实施例的作为半导体器件及使用其的电子器件的另一实例的TFT-LCD的剖面图。
具体实施方式
本发明将参照所给附图予以较详尽描述，优选实施例也同时展示在附图中。
图2为依照本发明第一实施例的作为半导体器件和采用该半导体器件的电子器件的实例的薄膜晶体管-液晶显示器(TFT-LCD)的剖面图。
参照图2，LCD作为一像素单元，该像素单元包括第一电极67，第二电极71，以及置于第一电极67和第二电极71之间的液晶层69。此处，LCD可由有机发光二极管(OLED)替代。
作为开关单元的驱动像素单元的驱动单元使用TFT半导体芯片。驱动单元包括柔性基底51、形成在基底51的上表面上且含源极区S和漏极区D的有源层53、沉积在有源层53的上表面上的第一绝缘层55和栅极电极57、覆盖栅极电极57的表面与部分有源层53的第二绝缘层59、与有源层53的源极区S和漏极区D连接并传输电子和空穴的形成于第二绝缘层59上的源极电极61a和漏极电极61b、以及用于保护整个结构的保护盖层63，该保护盖层63涂敷于基底51、有源层53、第二绝缘层59、以及源极电极61a和漏极电极61b的表面上。
置于像素单元与驱动单元之间的第三绝缘层65形成在基底51和保护盖层63的表面上，从而在将像素单元与驱动单元绝缘的同时保护TFT半导体芯片不受外界影响。贯通第三绝缘层65和保护盖层63至漏极电极61b表面形成的接触孔73填充以与第一电极67相同的材料。像素单元和驱动单元用密封盖层79密封并与背光(未示出)连接，从而完成TFT-LCD。此处，TFT可由薄膜二极管(TFD)替代。
优选的是，保护盖层63由抗拉强度高于30GPa且硬度大于200的材料构成。根据固化方法，可用作保护盖层的材料的实例包括紫外固化材料、X射线固化材料、离子束固化材料、以及电子束固化材料。
在采用紫外固化法的情况下，可以使用聚乙烯基肉桂酸酯衍生物，烯丙脂预聚物，环化聚异戊二烯，2，3二氯-1-丙基丙烯酸酯，聚乙烯苯酚，烯丙基材料或作为聚酰亚胺母体的丙烯酸基材料。
在采用X射线固化法的情况下，可以使用聚邻苯二甲酸二烯丙酯(PDOP)，聚(甲基丙烯酸缩水甘油酯-共-丙烯酸乙酯)(COP)，聚(2，3二氯-1-丙基丙烯酸酯)(DCPA)，DCOPA(DCPA+COP)，DCPA+N-乙烯基咔唑，聚(2，3-二溴-1-丙基丙烯酸酯-共-丙烯酸缩水甘油酯)，聚(氯乙基乙烯醚-共-乙烯氧乙基丙烯酸酯)，AgBr乳化剂，溴化四硫富瓦烯官能团化聚苯乙烯，烃抗蚀剂，金属丙烯酸盐，聚(甲基丙烯酸缩水甘油酯-EA)(PGMA-EA)，SEL-N，OEBR，CER，DCPA-单体混合物，DCPA-BABTDS，DCPA-DPDVS，DCPA-BMBTDS，DCPA-NVC，DCPA-NVC-DPDVS，DCPA-(2-(1-萘基)-乙基甲基丙烯酸酯和丙烯酸酯)，DCPA-NVC-DMPSS(二甲基苯基苯乙烯基硅烷)，DCPA-NPM(N-苯基马来酰亚胺)，DCPA-NPM-DMPSS(二甲基苯基甲硅烷基苯乙烯)，包含N-乙烯基咔唑单体的聚合物，聚(2，3-二氯-1-丙基甲基丙烯酸酯)，聚(2-氯乙基丙烯酸酯)，聚(2，2，2-三氯乙基丙烯酸酯)，聚(1，3-二氯-2-丙基丙烯酸酯)，以及聚(2，3-二氯-1-丙基丙烯酸酯)。
在利用离子束固化法的情况下，可以使用含有N-苯基马来酰亚胺的环化橡胶，线型酚醛清漆(Novolac)，聚氯乙烯(PVC)，聚乙烯缩甲醛(PVF)，聚甲基丙烯酸甲脂(PMMA)，SiO2，Ag2Se/GeSe2，聚(2，3-二溴-1-丙基丙烯酸酯-共-2，3-二氯-丙基丙烯酸酯)，以及聚乙烯基咔唑-三硝基芴酮复合物。
在采用电子束固化法的情况下，可以使用聚苯乙烯(PS)，聚(甲基丙烯酸缩水甘油酯-共-乙醇盐)(COP)，聚甲基丙烯酸缩水甘油酯(PGMA)，聚二烯丙基邻苯二甲酸酯(PDOP)，聚4-氯苯乙烯(P(4Cl-Sty))，聚2-氯苯乙烯(P(2Cl-Sty))，聚2，4-氯苯乙烯(P(2&4-ClSty))，聚(乙烯基乙酸酯)，聚(甲基乙烯基酮)，聚(乙烯基肉桂酸酯)，聚氯乙烯(P(VC))，聚乙烯基吡咯烷酮，聚乙烯基甲苯(P(VT))，聚乙烯基苄基氯(P(VBCl))，聚乙烯基苯磺酸(P(VBSA))，聚4-异丙基苯乙烯，聚4-三丁基苯乙烯，聚4-溴代苯乙烯(P(4Br-Sty))，4-氯苯乙烯和甲基丙烯酸缩水甘油酯的共聚物(共聚物-P(4Cl-Sty-CO-GMA))，3-氯苯乙烯和甲基丙烯酸缩水甘油酯的共聚物(P(3Cl-Sty-CO-GMA))，氯苯乙烯和甲基丙烯酸缩水甘油酯的共聚物(P(ClSty-CO-GMA))，乙烯基苄基氯和甲基丙烯酸缩水甘油酯的共聚物(P(VBCl-CO-GMA))，乙烯基和甲基丙烯酸缩水甘油酯的共聚物(P(VT-CO-GMA))，环氧化聚丁二烯(EPB)，CPB，氯甲基化聚苯乙烯(CMS)，氯甲基化聚α-甲基-苯乙烯(α M-CMS)，SEL-N，OEBR-100，以及AZ 1350Shipley光致抗蚀剂。
形成保护盖层的方法的实例如下。第一，以旋涂或印刷方法涂敷预定的有机材料，用紫外线、X射线、离子束或电子束来固化该有机材料。第二，采用包括溅镀工艺(sputtering process)或蒸镀工艺(evaporation process)的PVD方法。第三，以等离子体增强化学气相沉积(PECVD)、高密度等离子体化学气相沉积(HDP-CVD)、原子层沉积(ALD)、金属有机化学气相沉积(MOCVD)用化学气相沉积(CVD)法沉积预定的有机材料，并用传统光刻工艺构图该预定的有机材料。
图3A至3P是说明依据本发明第一实施例的半导体器件的制造方法的剖面图。此处，保护盖层是用紫外固化方法形成。
首先，用RF溅镀工艺将约50nm厚的非晶硅层53a沉积在柔性基底51上，并在非晶硅层53a上实施一光刻工艺。此处，通过在非晶硅层53a的上表面上涂光致抗蚀剂44、在光致抗蚀剂44上方放置掩模42a、并对光致抗蚀剂44和非晶硅层53a进行曝光、显影和蚀刻，来进行该光刻。此处，柔性基底51的实例包括如聚醚砜(PES)、聚丙烯酸酯(PAR)、聚萘二甲酸乙二酯(PEN)、聚甲基丙烯酸甲脂(PMMA)、聚酰亚胺(PI)、聚碳酸酯(PC)、或聚对苯二甲酸乙二醇酯(PET)的塑料基底，诸如铝(Al)或不锈钢(steel usestainless)(SUS)的薄金属膜，或者厚度小于100μm的薄玻璃基底。当处理温度高于200℃时，优选PES作为基底51。
当执行光刻工艺时，在基底51上，非晶硅层53a根据掩模42a的形状被构图，如图3B所示。随后，波长308nm的重叠比(overlapping ratio)为95％的准分子激光(excimer laser)辐照非晶硅层53a，使非晶硅层53a变成晶态硅层并形成有源层53，如图3C所示。
参照图3D，采用CVD方法将SiO2形成的第一绝缘层55沉积在图3C的所得结构上，并用DC溅镀工艺将Al形成的栅极电极57沉积于第一绝缘层55上。再将光致抗蚀剂44连续地涂敷于栅极电极57的上表面上。然后，如图3E所示，掩模42b置于光致抗蚀剂44上方，进行包括曝光、显影和蚀刻的光刻工艺，从而对栅极电极57和第一绝缘层55构图。
在构图栅极电极57和第一绝缘层55后，对有源层53注入离子，使得在有源层53内形成源极区S和漏极区D，如图3F所示。接着用准分子激光活化源极区S和漏极区D。如图3G所示，作为层间介电(ILD)层的第二绝缘层59沉积在图3F的所得结构上，并将光致抗蚀剂44涂敷于第二绝缘层59上。然后，将具有预定形状的掩模42c置于光致抗蚀剂44上方，并实施光刻。结果，第二绝缘层59被构图成露出有源层53的部分源极区S和漏极区D，如图3H所示。
参照图3I，将Al电极层61沉积在图3H的所得结构上，从而与源极区S和漏极区D电连接。接着，光致抗蚀剂44沉积在电极层61上，并且在将具有预定形状的掩模42d置于光致抗蚀剂44上方之后，进行光刻。因此，蚀刻电极层61的中央部分，且电极层61被分为源极电极61a和漏极电极61b，如图3J所示。此处，源极电极61a和漏极电极61b分别与源极区S和漏极区D电连接。
为了保护图3J的薄膜半导体芯片并使源极电极61a和漏极电极61b绝缘，将保护盖层63旋涂在图3J的所得结构上，如图3k所示。此处，保护盖层63由如丙烯酸树脂或环氧树脂的紫外固化树脂形成。
在约90℃的温度下对保护盖层63软烘烤(soft bake)约3分钟。然后如图3L所示，将具有预定形状的掩模42e置于保护盖层63上方并辐照紫外线。通过在辐照紫外线后显影保护盖层63，构图保护盖层63，如图3M所示。在约150℃的温度下对构图后的保护盖层63硬烘烤(hard bake)约10分钟，并进行氩等离子体处理。然后，如图3N所示，将第三绝缘层65沉积在基底51和保护盖层63上。此处，当在有机保护盖层63上沉积无机的第三绝缘层65时，进行氩等离子体处理以防止粘附力减弱。
如图3O所示，形成接触孔73，贯通第三绝缘层65和保护盖层63。参见图3P，作为像素单元的显示电极的铟锡氧化物(ITO)沉积在第三绝缘层65上，形成第一电极67。然后，液晶层69和第二电极71依次形成于第一电极67上，构成像素单元，且涂敷用于密封像素单元和驱动单元的密封盖层79，从而完成TFT-LCD 70。
图4是剖面图，说明按照本发明第二实施例的作为半导体器件和使用其的电子器件的实例的TFT-LCD。
图4的TFT-LCD 100的结构与图2的TFF-LCD 70的结构相似。然而，依照本发明第二实施例的半导体器件除了在第三绝缘层95之下形成的一第二保护盖层93b之外，还包括一位于基底81和有源层83之间的第一保护盖层93a。附图标记85、87、89、91a、91b、95、97、99和101分别代表第一绝缘层、栅极电极、第二绝缘层、源极电极、漏极电极、第三绝缘层、第一电极、液晶层和第二电极。由于依照本发明第二实施例的半导体器件和使用该半导体器件的电子器件还包括位于基底81和有源层83之间的第一保护盖层93a、以及第二保护盖层93b，所以可以提高抵抗因基底81的弯曲而产生的应力的耐用性。
图5A至5S为剖面图，用于说明依照本发明第二实施例的半导体器件的制造方法。
参照图5A，用旋涂法将紫外固化树脂涂于柔性基底81上，由此形成第一保护盖层93a。在约90℃的温度对第一保护盖层93a软烘烤约3分钟。然后如图5B所示，将掩模72a置于第一保护盖层93a上方，并对选定的部位实施紫外辐照约10秒钟。然后，将第一保护盖层93a浸入显影液中，去除第一保护盖层93a的未曝光部分。其后，在约150℃的温度对构图后的第一保护盖层93a硬烘烤约10分钟并进行氩等离子体处理。
接着，用RF溅镀工艺将约50nm厚的非晶硅层83a沉积在第一保护盖层93a上，并对非晶硅层83a实施光刻。于是，形成了图5E所示的构图后的非晶硅层83a。在图5D中，附图标记72b代表掩模，附图标记84代表光致抗蚀剂。
参照图5F，通过以95％的重叠比辐照308nm的准分子激光来使非晶硅层83a结晶。当用结晶的硅形成有源层83时，采用CVD方法将第二绝缘层85沉积在有源层83、第一保护盖层93a、以及基底81的暴露部分上，如图5G所示。其后，用DC溅镀工艺将栅极电极87沉积于第二绝缘层85上。再将光致抗蚀剂84涂敷于栅极电极87上，并在光致抗蚀剂84上实施光刻。因此，构图第二绝缘层85和栅极电极87，从而形成沟道区，如图5H所示。此处，图5G的附图标记72c代表掩模。
参照图5I，通过对有源层83注入离子，在有源层83内形成源极区S和漏极区D。然后辐照准分子激光来活化源极区S和漏极区D。参照图5J，作为ILD层的第二绝缘层89沉积在图5I的所得结构上，并实施光刻。从而，如图5K所示，去除了第二绝缘层89中接触源极区S和漏极区D的部分。此处，图5J的附图标记72d代表掩模。源极电极91a和漏极电极91b形成在第二绝缘层89被去除的部分中，以电连接源极区S和漏极区D。
参见图5L，将金属栅电极层91沉积在图5K的所得结构上并在栅电极层91上实施光刻。参照图5M，栅电极层91被构图形成源极电极91a和漏极电极91b。参照图5N，用旋涂法将第二保护盖层93b沉积在图5M的所得结构上，并对其进行软烘烤。参照图5O，具有预定形状的掩模72f置于第二保护盖层93b上方，以对第二保护盖层93b的选定部分照射紫外线。如图5P所示，通过在紫外辐照之后执行显影工艺，构图第二保护盖层93b。对构图后的第二保护盖层93b进行硬烘烤并进行氩等离子体处理。第二保护盖层93b的构图工艺条件与第一保护盖层93a的相同。
在形成依照本发明第二实施例的作为半导体器件的示例的TFT之后，如图5Q所示，第三绝缘层95沉积在基底81和第二保护盖层93b上。参见图5R，贯通第三绝缘层95和第二保护盖层93b至漏极电极91b的表面，形成接触孔103。
参照图5S，作为ITO构成的显示电极的第一电极97，其形成于第三绝缘层95上，并且液晶层99和ITO第二电极101依次形成于第一电极97上，从而构成像素单元。密封盖层109形成于像素单元和驱动单元上，从而完成TFT-LCD。
如上所述，TFT是依照本发明第一和第二实施例的半导体器件的示例；但是，薄膜二极管(TFD)或金属-绝缘体-金属(MIM)也可以用作半导体器件。此外，如第一和第二实施例中公开的半导体器件及使用该半导体器件的电子器件的耐用性可通过形成保护半导体器件的保护盖层而得以提高。
图6是剖面图，示出作为根据本发明第一实施例的半导体器件及使用该半导体器件的电子器件的另一示例的TFT-LCD。图7是剖面图，示出作为根据本发明第二实施例的半导体器件及使用该半导体器件的电子器件的另一示例的TFT-LCD。
在图6和图7中的TFT-LCD中，作为显示电极的第一电极127和157分别填充在贯通保护盖层123和第二保护盖层153b的接触孔133和163中，并与漏极电极121b和151b连接，而不包括第三绝缘层。此处，附图标记111和141代表柔性基底，附图标记113和143代表有源层，附图标记115和145代表第一绝缘层，附图标记117和147代表栅极电极，附图标记119和149代表第二绝缘层，附图标记121a和151a代表源极电极，附图标记129和159代表液晶层，附图标记131和161代表第二电极，附图标记139和169代表密封盖层。
如上所述制造的薄膜半导体器件及使用该薄膜半导体器件的电子器件的优点在于，通过使用密封薄膜半导体器件的保护盖层而具有抵抗外部应力的提高的耐用性。
虽然已经参照本发明的优选实施例具体显示和说明了本发明，但是本领域技术人员了解，在不脱离本发明的由所附权利要求限定的精神和范围的情况下，可对其做形式和细节上的各种更动与润饰。
例如，本领域技术人员可以在各种使用薄膜半导体器件的电子器件上形成保护盖层。

Claims (27)

1.一种薄膜半导体器件，包括：
一柔性基底；
一形成在该柔性基底上的半导体芯片，该半导体芯片包括源极、漏极和沟道；
一绝缘区，形成在该半导体芯片上；
一栅极电极，形成在该绝缘区上；
一第二绝缘区，形成在该栅极电极上；
一源极电极，形成在该第二绝缘区上且与该源极连接；
一漏极电极，形成在该第二绝缘区上且与该漏极连接；
一保护盖层，形成在该第二绝缘区以及该源极电极和该漏极电极上，且形成在该半导体芯片与该柔性基底之间，
其中该保护盖层由紫外固化树脂、X射线固化材料、电子束固化材料和离子束固化材料中的任意一种构成。
2.如权利要求1所述的薄膜半导体器件，其中该保护盖层的抗拉强度大于30GPa。
3.如权利要求1所述的薄膜半导体器件，其中该柔性基底由塑料和薄金属膜中的任意一种构成。
4.如权利要求1所述的薄膜半导体器件，其中该柔性基底为厚度小于100μm的玻璃基底。
5.一种电子器件，包括：
一柔性基底；
一形成在该柔性基底上的半导体芯片；以及
一围绕该半导体芯片的保护盖层，其中该保护盖层形成在该半导体芯片的上表面和侧表面上且形成在该半导体芯片与该柔性基底之间，
其中该保护盖层由紫外固化树脂、X射线固化材料、电子束固化材料和离子束固化材料中的任意一种构成。
6.如权利要求5所述的电子器件，其中该保护盖层的抗拉强度大于30GPa。
7.如权利要求5所述的电子器件，其中该半导体芯片是薄膜晶体管、薄膜二极管和金属绝缘体金属中的任意一种。
8.如权利要求5所述的电子器件，其中该柔性基底由塑料和薄金属膜中的任意一种构成。
9.如权利要求5所述的电子器件，其中该柔性基底为厚度小于100μm的玻璃基底。
10.如权利要求5所述的电子器件，还包括与该半导体芯片连接的液晶显示器或有机发光二极管。
11.一种电子器件的制造方法，该方法包括：
(a)在一柔性基底上涂敷一第一保护盖层，并构图该第一保护盖层为一预定图形；
(b)在该第一保护盖层上制造一薄膜半导体芯片；
(c)涂敷一第二保护盖层来密封该半导体芯片；
(d)在该第二保护盖层和该基底上沉积一绝缘层；
(e)形成贯通该半导体芯片的上表面上的该绝缘层和该第二保护盖层的一接触孔；以及
(f)形成一通过该接触孔与该半导体芯片电连接的电极，并在该电极上形成一被驱动单元，该被驱动单元由该半导体芯片驱动。
12.一种电子器件的制造方法，该方法包括：
(a)在一柔性基底上涂敷一第一保护盖层，并构图该第一保护盖层为一预定图形；
(b)在该第一保护盖层上制造一薄膜半导体芯片；
(c)涂敷一第二保护盖层来密封该半导体芯片；
(d)形成一贯通该第二保护盖层至该半导体芯片的上表面的接触孔；以及
(e)形成一通过该接触孔与该半导体芯片电连接的电极，并在该电极上形成一被驱动单元，该被驱动单元由该半导体芯片驱动。
13.如权利要求11或12所述的制造方法，其中该保护盖层的抗拉强度大于30GPa。
14.如权利要求11或12所述的制造方法，其中该柔性基底由塑料和薄金属膜中的任意一种构成。
15.如权利要求11或12所述的制造方法，其中该柔性基底为厚度小于100μm的玻璃基底。
16.如权利要求11或12所述的制造方法，其中该半导体芯片是薄膜晶体管、薄膜二极管和金属绝缘体金属中的任意一种。
17.如权利要求11或12所述的制造方法，其中该被驱动单元为液晶显示器的一像素单元。
18.如权利要求11或12所述的制造方法，其中该被驱动单元为有机发光二极管的一像素单元。
19.如权利要求11和12中的任一项所述的制造方法，其中该第一和该第二保护盖层由紫外固化树脂、X射线固化材料、电子束固化材料和离子束固化材料中的任意一种构成。
20.如权利要求19所述的制造方法，其中该紫外固化树脂为丙烯酸树脂和环氧树脂中的任意一种。
21.如权利要求11所述的制造方法，其中步骤(a)包括：
在该基底上旋涂紫外固化树脂；
在低温下烘烤该紫外固化树脂，并辐照紫外光线至该基底的预定部位；以及
执行显影工艺以去除剩余的紫外固化树脂，并在高温下执行加热工艺以构图该第一保护盖层。
22.如权利要求12所述的制造方法，其中步骤(a)包括：
在该基底上旋涂紫外固化树脂；
在低温下烘烤该紫外固化树脂，并辐照紫外光线至该基底的预定部位；以及
执行显影工艺以去除剩余的紫外固化树脂，并在高温下进行加热工艺以构图该第一保护盖层。
23.如权利要求21所述的制造方法，其中步骤(b)包括在对该第一保护盖层实施氩等离子体处理后，制造该薄膜半导体芯片。
24.如权利要求22所述的制造方法，其中步骤(b)包括在对该第一保护盖层实施氩等离子体处理后，制造该薄膜半导体芯片。
25.如权利要求23所述的制造方法，其中步骤(c)包括：
在该半导体芯片上旋涂该紫外固化树脂；
在低温下烘烤该紫外固化树脂，并辐照紫外光线至该半导体芯片的预定部位；以及
执行显影工艺以去除剩余的紫外固化树脂，并在高温下进行加热工艺以形成该第二保护盖层。
26.如权利要求24所述的制造方法，其中步骤(c)包括：
在该半导体芯片上旋涂该紫外固化树脂；
在低温下烘烤该紫外固化树脂，并辐照紫外光线至该半导体芯片的预定部位；以及
执行显影工艺以去除剩余的紫外固化树脂，并在高温下进行加热工艺以形成该第二保护盖层。
27.如权利要求25所述的制造方法，其中步骤(d)包括在对该第二保护盖层实施氩等离子体处理后，沉积该绝缘层。
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