CN100448023C - 具有u字型栅极结构的半导体器件 - Google Patents

具有u字型栅极结构的半导体器件 Download PDF

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Publication number
CN100448023C
CN100448023C CNB2003801019541A CN200380101954A CN100448023C CN 100448023 C CN100448023 C CN 100448023C CN B2003801019541 A CNB2003801019541 A CN B2003801019541A CN 200380101954 A CN200380101954 A CN 200380101954A CN 100448023 C CN100448023 C CN 100448023C
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China
Prior art keywords
gate
fin
semiconductor device
insulating layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2003801019541A
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English (en)
Chinese (zh)
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CN1708855A (zh
Inventor
B·于
S·S·艾哈迈德
J·X·安
S·达克希纳-默西
Z·克里沃卡皮奇
汪海宏
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GlobalFoundries Inc
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Advanced Micro Devices Inc
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Publication of CN1708855A publication Critical patent/CN1708855A/zh
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Publication of CN100448023C publication Critical patent/CN100448023C/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB2003801019541A 2002-10-22 2003-10-14 具有u字型栅极结构的半导体器件 Expired - Fee Related CN100448023C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/274,867 US6833588B2 (en) 2002-10-22 2002-10-22 Semiconductor device having a U-shaped gate structure
US10/274,867 2002-10-22

Publications (2)

Publication Number Publication Date
CN1708855A CN1708855A (zh) 2005-12-14
CN100448023C true CN100448023C (zh) 2008-12-31

Family

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Family Applications (1)

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CNB2003801019541A Expired - Fee Related CN100448023C (zh) 2002-10-22 2003-10-14 具有u字型栅极结构的半导体器件

Country Status (9)

Country Link
US (2) US6833588B2 (enExample)
JP (1) JP4745663B2 (enExample)
KR (1) KR100993937B1 (enExample)
CN (1) CN100448023C (enExample)
AU (1) AU2003282849A1 (enExample)
DE (1) DE10393565B4 (enExample)
GB (1) GB2409575B (enExample)
TW (1) TWI321336B (enExample)
WO (1) WO2004038804A2 (enExample)

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WO2004038804A3 (en) 2004-06-10
CN1708855A (zh) 2005-12-14
DE10393565T5 (de) 2005-09-01
GB2409575B (en) 2006-02-15
US20040075121A1 (en) 2004-04-22
AU2003282849A1 (en) 2004-05-13
GB0506579D0 (en) 2005-05-04
KR20050057663A (ko) 2005-06-16
TWI321336B (en) 2010-03-01
TW200414324A (en) 2004-08-01
KR100993937B1 (ko) 2010-11-12
DE10393565B4 (de) 2010-07-15
JP2006504268A (ja) 2006-02-02
JP4745663B2 (ja) 2011-08-10
US20050006666A1 (en) 2005-01-13
GB2409575A (en) 2005-06-29
WO2004038804A2 (en) 2004-05-06
US7179692B2 (en) 2007-02-20
US6833588B2 (en) 2004-12-21

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CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081231

Termination date: 20181014