CN100431006C - 用于磁性装置的磁性膜 - Google Patents

用于磁性装置的磁性膜 Download PDF

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Publication number
CN100431006C
CN100431006C CNB2004100982124A CN200410098212A CN100431006C CN 100431006 C CN100431006 C CN 100431006C CN B2004100982124 A CNB2004100982124 A CN B2004100982124A CN 200410098212 A CN200410098212 A CN 200410098212A CN 100431006 C CN100431006 C CN 100431006C
Authority
CN
China
Prior art keywords
film
magnetic
palladium
films
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100982124A
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English (en)
Chinese (zh)
Other versions
CN1707614A (zh
Inventor
野间贤二
松冈正昭
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Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of CN1707614A publication Critical patent/CN1707614A/zh
Application granted granted Critical
Publication of CN100431006C publication Critical patent/CN100431006C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3227—Exchange coupling via one or more magnetisable ultrathin or granular films
    • H01F10/3231—Exchange coupling via one or more magnetisable ultrathin or granular films via a non-magnetic spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/1171—Magnetic recording head with defined laminate structural detail

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
CNB2004100982124A 2004-06-07 2004-11-30 用于磁性装置的磁性膜 Expired - Fee Related CN100431006C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004168502A JP2005347688A (ja) 2004-06-07 2004-06-07 磁気デバイス用磁性膜
JP2004-168502 2004-06-07
JP2004168502 2004-06-07

Publications (2)

Publication Number Publication Date
CN1707614A CN1707614A (zh) 2005-12-14
CN100431006C true CN100431006C (zh) 2008-11-05

Family

ID=34930818

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100982124A Expired - Fee Related CN100431006C (zh) 2004-06-07 2004-11-30 用于磁性装置的磁性膜

Country Status (6)

Country Link
US (1) US7564648B2 (enExample)
EP (2) EP1918946B1 (enExample)
JP (1) JP2005347688A (enExample)
KR (1) KR100688141B1 (enExample)
CN (1) CN100431006C (enExample)
DE (2) DE602004028182D1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007049059A (ja) * 2005-08-12 2007-02-22 Fujitsu Ltd 磁気デバイス用磁性膜、ハードディスクドライブ用磁気ヘッド、および固体デバイス
JP2005347688A (ja) 2004-06-07 2005-12-15 Fujitsu Ltd 磁気デバイス用磁性膜
JP2006024732A (ja) * 2004-07-08 2006-01-26 Fujitsu Ltd 磁性膜並びにハードディスクドライブ用記録再生ヘッドおよび固体デバイス
KR100748198B1 (ko) * 2005-08-12 2007-08-10 후지쯔 가부시끼가이샤 자기 디바이스용 자성막, 하드디스크 드라이브용 자기헤드, 및 고체 디바이스
JP2007049058A (ja) * 2005-08-12 2007-02-22 Fujitsu Ltd 磁気デバイス用磁性膜、ハードディスクドライブ用磁気ヘッド、および固体デバイス
US20080057281A1 (en) * 2006-06-30 2008-03-06 Seagate Technology Llc Corrosion resistant and high saturation magnetization materials
US20080003454A1 (en) * 2006-06-30 2008-01-03 Seagate Technology Llc Corrosion resistant and high saturation magnetization materials
US8632897B2 (en) * 2008-04-30 2014-01-21 Seagate Technology Llc Multilayer hard magnet and data storage device read/write head incorporating the same
US8861316B2 (en) * 2012-12-18 2014-10-14 Seagate Technology Llc Write pole for recording head
CN106887328B (zh) * 2017-01-19 2018-06-19 北京航空航天大学 消除反常自旋重取向的非晶CoSiB厚膜及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891278A (en) * 1986-02-21 1990-01-02 Hitachi, Ltd. Ferrromagnetic thin film and magnetic head using it
US6452240B1 (en) * 2000-10-30 2002-09-17 International Business Machines Corporation Increased damping of magnetization in magnetic materials
US20030184921A1 (en) * 2001-04-24 2003-10-02 Yasunari Sugita Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03100171A (ja) * 1989-09-14 1991-04-25 Fuji Photo Film Co Ltd スパッタ装置
JPH04186707A (ja) 1990-11-21 1992-07-03 Hitachi Ltd 光磁気記録膜の構造
KR920010562B1 (ko) * 1991-01-05 1992-12-07 김순우 진공청소기용 기어박스구조
JP3102505B2 (ja) * 1991-07-18 2000-10-23 ティーディーケイ株式会社 軟磁性多層めっき膜の製造方法および軟磁性多層めっき膜ならびに磁気ヘッド
US5780176A (en) * 1992-10-30 1998-07-14 Kabushiki Kaisha Toshiba Magnetoresistance effect element
JP3247535B2 (ja) * 1993-03-03 2002-01-15 株式会社東芝 磁気抵抗効果素子
JP3707166B2 (ja) * 1996-01-29 2005-10-19 ソニー株式会社 磁気ヘッド
GB2312088B (en) 1996-03-20 2000-09-20 Univ City Magnetoresistive device
KR100282335B1 (ko) * 1998-10-08 2001-02-15 구자홍 광자기 기록 매체
KR20000002733A (ko) * 1998-06-23 2000-01-15 구자홍 광자기 기록 매체
US6636398B2 (en) * 2000-06-02 2003-10-21 Tdk Corporation Magnetoresistive effect sensor, thin-film magnetic head with the sensor, manufacturing method of magnetoresistive sensor and manufacturing method of thin-film magnetic head
US6855240B2 (en) * 2000-08-09 2005-02-15 Hitachi Global Storage Technologies Netherlands B.V. CoFe alloy film and process of making same
US6760189B2 (en) * 2001-01-17 2004-07-06 Alps Electric Co., Ltd. Soft magnetic film having high corrosion resistance, magnetic head including the same, and method for making the soft magnetic film
JP2002309353A (ja) * 2001-04-13 2002-10-23 Fujitsu Ltd 軟磁性膜及びこれを用いる記録用の磁気ヘッド
US7095586B2 (en) * 2002-01-15 2006-08-22 Alps Electric Co., Ltd. Soft magnetic film having saturation magnetic flux density Bs of at least 2.0 T and magnetic head including the same
JP2004011681A (ja) * 2002-06-04 2004-01-15 Smc Corp アクチュエータ
US6780291B2 (en) 2002-06-07 2004-08-24 Seagate Technology Llc Self-annealed thin film deposition process
JP2004178708A (ja) * 2002-11-27 2004-06-24 Tdk Corp 磁気記録媒体及び磁気記録装置
US7038873B2 (en) * 2003-03-20 2006-05-02 Hitachi Maxell, Ltd. Magnetic recording medium having a specific relation of coercive force HC and residual magnetization MR in perpendicular direction to substrate surface
JP2005347688A (ja) 2004-06-07 2005-12-15 Fujitsu Ltd 磁気デバイス用磁性膜
US20060083950A1 (en) * 2004-06-07 2006-04-20 Fujitsu Limited Magnetic film for a magnetic device, magnetic head for a hard disk drive, and solid-state device
US7300711B2 (en) * 2004-10-29 2007-11-27 International Business Machines Corporation Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4891278A (en) * 1986-02-21 1990-01-02 Hitachi, Ltd. Ferrromagnetic thin film and magnetic head using it
US6452240B1 (en) * 2000-10-30 2002-09-17 International Business Machines Corporation Increased damping of magnetization in magnetic materials
US20030184921A1 (en) * 2001-04-24 2003-10-02 Yasunari Sugita Magnetoresistive element and magnetoresistive magnetic head, magnetic recording apparatus and magnetoresistive memory device using the same

Also Published As

Publication number Publication date
DE602004028104D1 (de) 2010-08-26
EP1605475A1 (en) 2005-12-14
KR100688141B1 (ko) 2007-03-02
US7564648B2 (en) 2009-07-21
DE602004028182D1 (de) 2010-08-26
US20050271901A1 (en) 2005-12-08
JP2005347688A (ja) 2005-12-15
KR20050116346A (ko) 2005-12-12
CN1707614A (zh) 2005-12-14
EP1918946A1 (en) 2008-05-07
EP1605475B1 (en) 2010-07-14
EP1918946B1 (en) 2010-07-14

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081105

Termination date: 20111130