CN100429926C - 图象传感器 - Google Patents

图象传感器 Download PDF

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Publication number
CN100429926C
CN100429926C CNB021027242A CN02102724A CN100429926C CN 100429926 C CN100429926 C CN 100429926C CN B021027242 A CNB021027242 A CN B021027242A CN 02102724 A CN02102724 A CN 02102724A CN 100429926 C CN100429926 C CN 100429926C
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CN
China
Prior art keywords
transistor
mentioned
circuit
reset
image sensor
Prior art date
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Expired - Fee Related
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CNB021027242A
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English (en)
Chinese (zh)
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CN1383320A (zh
Inventor
鵜户真也
国分政利
土屋主税
山本克义
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Socionext Inc
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Fujitsu Ltd
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Publication date
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Publication of CN1383320A publication Critical patent/CN1383320A/zh
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Publication of CN100429926C publication Critical patent/CN100429926C/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
CNB021027242A 2001-04-26 2002-01-24 图象传感器 Expired - Fee Related CN100429926C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001130148A JP3734717B2 (ja) 2001-04-26 2001-04-26 イメージセンサ
JP130148/2001 2001-04-26

Publications (2)

Publication Number Publication Date
CN1383320A CN1383320A (zh) 2002-12-04
CN100429926C true CN100429926C (zh) 2008-10-29

Family

ID=18978574

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021027242A Expired - Fee Related CN100429926C (zh) 2001-04-26 2002-01-24 图象传感器

Country Status (7)

Country Link
US (1) US6914631B2 (enExample)
EP (1) EP1253781B1 (enExample)
JP (1) JP3734717B2 (enExample)
KR (1) KR100834424B1 (enExample)
CN (1) CN100429926C (enExample)
DE (1) DE60105393T2 (enExample)
TW (1) TW541832B (enExample)

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US7317484B2 (en) * 2003-02-26 2008-01-08 Digital Imaging Systems Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
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KR100871688B1 (ko) * 2004-02-27 2008-12-08 삼성전자주식회사 고체 촬상 장치 및 그 구동 방법
TWI264086B (en) * 2004-06-04 2006-10-11 Via Tech Inc Method and apparatus for image sensor
US7667171B2 (en) * 2004-07-06 2010-02-23 Panasonic Corporation Solid-state imaging device
JP4481758B2 (ja) * 2004-07-28 2010-06-16 株式会社東芝 信号処理装置及びデータ処理装置
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
KR100657863B1 (ko) 2005-02-07 2006-12-14 삼성전자주식회사 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서
JP4878123B2 (ja) * 2005-02-07 2012-02-15 浜松ホトニクス株式会社 固体撮像装置
KR100691190B1 (ko) * 2005-07-13 2007-03-09 삼성전기주식회사 이미지 센서 어레이
JP5017895B2 (ja) * 2006-03-15 2012-09-05 日産自動車株式会社 赤外線検出装置
JP4956084B2 (ja) * 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
KR100879386B1 (ko) 2006-11-13 2009-01-20 삼성전자주식회사 씨모스 이미지 센서 및 그것을 포함하는 디지털 카메라그리고 씨모스 이미지 센서의 영상 신호 검출 방법
KR100849824B1 (ko) * 2007-03-09 2008-07-31 동부일렉트로닉스 주식회사 이미지센서 및 그 제조방법
US7642498B2 (en) 2007-04-04 2010-01-05 Aptina Imaging Corporation Capacitor multipler circuits and the applications thereof to attenuate row-wise temporal noise in image sensors
JP4311482B2 (ja) 2007-05-17 2009-08-12 ソニー株式会社 撮像回路、ｃｍｏｓセンサ、および撮像装置
JP4386113B2 (ja) 2007-08-03 2009-12-16 ソニー株式会社 参照電圧回路および撮像回路
US7999342B2 (en) * 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
JP2009253559A (ja) * 2008-04-03 2009-10-29 Sharp Corp 固体撮像装置および電子情報機器
JP4618349B2 (ja) 2008-08-11 2011-01-26 ソニー株式会社 固体撮像素子、撮像方法及び撮像装置
US20100252717A1 (en) * 2008-09-29 2010-10-07 Benoit Dupont Active-pixel sensor
ES2516066T3 (es) 2009-01-16 2014-10-30 Claret Medical, Inc. Filtro sanguíneo intravascular
KR101605831B1 (ko) 2009-08-24 2016-03-24 삼성전자주식회사 씨모스 이미지 센서 및 그것의 영상 신호 검출 방법
WO2011111490A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP2013179479A (ja) * 2012-02-28 2013-09-09 Nikon Corp 固体撮像装置及びこれを用いた電子カメラ
WO2014002333A1 (ja) * 2012-06-27 2014-01-03 パナソニック株式会社 固体撮像装置
US9500752B2 (en) * 2013-09-26 2016-11-22 Varian Medical Systems, Inc. Pixel architecture for imaging devices
JP6502597B2 (ja) * 2015-04-16 2019-04-17 株式会社半導体エネルギー研究所 撮像装置
US9736413B1 (en) * 2016-02-03 2017-08-15 Sony Corporation Image sensor and electronic device with active reset circuit, and method of operating the same
JP6632421B2 (ja) * 2016-02-22 2020-01-22 キヤノン株式会社 固体撮像装置および撮像装置
CN107888807B (zh) * 2016-09-29 2020-07-24 普里露尼库斯股份有限公司 固体摄像装置、固体摄像装置的驱动方法以及电子设备
CN111093043B (zh) * 2018-10-24 2021-10-22 宁波飞芯电子科技有限公司 一种辐射接收系统及方法、传感阵列
US11451729B2 (en) 2018-10-24 2022-09-20 Ningbo ABAX Sensing Electronic Technology Co., Ltd. Reset method, reset device, and reset system and pixel array using the same
CN112345909B (zh) * 2019-08-07 2023-10-13 宁波飞芯电子科技有限公司 一种检测方法、检测电路及复位电路
JP7336361B2 (ja) 2019-11-12 2023-08-31 株式会社ジャパンディスプレイ 検出装置
KR20210137811A (ko) 2020-05-11 2021-11-18 삼성전자주식회사 센서 및 전자 장치
US12273642B2 (en) 2022-12-09 2025-04-08 Fairchild Imaging, Inc. Dual-mode column amplifier

Citations (3)

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EP0813338A2 (en) * 1996-06-13 1997-12-17 Rockwell International Corporation Low noise amplifier for passive pixel cmos imager
WO1999053683A1 (en) * 1998-04-08 1999-10-21 Conexant Systems, Inc. Compact low-noise active pixel sensor with progressive row reset
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction

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US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
JP4035194B2 (ja) * 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
JPH1198414A (ja) * 1997-09-16 1999-04-09 Toshiba Corp Ｍｏｓ型固体撮像装置の増幅回路
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JP4174106B2 (ja) 1998-08-31 2008-10-29 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
JP3601052B2 (ja) * 1999-03-11 2004-12-15 日本電気株式会社 固体撮像装置
JP4154068B2 (ja) * 1999-04-12 2008-09-24 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム及び画像読取システム
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AU2001293062A1 (en) * 2000-09-25 2002-04-08 Foveon, Inc. Active pixel sensor with noise cancellation
US6459078B1 (en) 2000-12-04 2002-10-01 Pixel Devices International, Inc. Image sensor utilizing a low FPN high gain capacitive transimpedance amplifier
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EP0813338A2 (en) * 1996-06-13 1997-12-17 Rockwell International Corporation Low noise amplifier for passive pixel cmos imager
WO1999053683A1 (en) * 1998-04-08 1999-10-21 Conexant Systems, Inc. Compact low-noise active pixel sensor with progressive row reset
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction

Also Published As

Publication number Publication date
US20020158974A1 (en) 2002-10-31
JP3734717B2 (ja) 2006-01-11
EP1253781A2 (en) 2002-10-30
EP1253781A3 (en) 2003-08-20
KR20020083416A (ko) 2002-11-02
DE60105393T2 (de) 2005-02-17
CN1383320A (zh) 2002-12-04
KR100834424B1 (ko) 2008-06-04
JP2002330348A (ja) 2002-11-15
TW541832B (en) 2003-07-11
EP1253781B1 (en) 2004-09-08
DE60105393D1 (de) 2004-10-14
US6914631B2 (en) 2005-07-05

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Effective date of registration: 20081212

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