DE60105393D1 - X-Y-Adressen-Festkörperbildaufnehmer - Google Patents

X-Y-Adressen-Festkörperbildaufnehmer

Info

Publication number
DE60105393D1
DE60105393D1 DE60105393T DE60105393T DE60105393D1 DE 60105393 D1 DE60105393 D1 DE 60105393D1 DE 60105393 T DE60105393 T DE 60105393T DE 60105393 T DE60105393 T DE 60105393T DE 60105393 D1 DE60105393 D1 DE 60105393D1
Authority
DE
Germany
Prior art keywords
state imaging
address solid
address
solid
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60105393T
Other languages
English (en)
Other versions
DE60105393T2 (de
Inventor
Shinya Udo
Masatoshi Kokubun
Chikara Tsuchiya
Katsuyosi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60105393D1 publication Critical patent/DE60105393D1/de
Publication of DE60105393T2 publication Critical patent/DE60105393T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
DE60105393T 2001-04-26 2001-12-27 X-Y-Adressen-Festkörperbildaufnehmer Expired - Lifetime DE60105393T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001130148 2001-04-26
JP2001130148A JP3734717B2 (ja) 2001-04-26 2001-04-26 イメージセンサ

Publications (2)

Publication Number Publication Date
DE60105393D1 true DE60105393D1 (de) 2004-10-14
DE60105393T2 DE60105393T2 (de) 2005-02-17

Family

ID=18978574

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60105393T Expired - Lifetime DE60105393T2 (de) 2001-04-26 2001-12-27 X-Y-Adressen-Festkörperbildaufnehmer

Country Status (7)

Country Link
US (1) US6914631B2 (de)
EP (1) EP1253781B1 (de)
JP (1) JP3734717B2 (de)
KR (1) KR100834424B1 (de)
CN (1) CN100429926C (de)
DE (1) DE60105393T2 (de)
TW (1) TW541832B (de)

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JP4132850B2 (ja) 2002-02-06 2008-08-13 富士通株式会社 Ｃｍｏｓイメージセンサおよびその制御方法
KR100490598B1 (ko) * 2002-11-22 2005-05-17 (주)하이칩스 씨모스 이미지 센서
US7317484B2 (en) 2003-02-26 2008-01-08 Digital Imaging Systems Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
US7280143B2 (en) * 2003-04-14 2007-10-09 Micron Technology, Inc. CMOS image sensor with active reset and 4-transistor pixels
JP4207659B2 (ja) * 2003-05-16 2009-01-14 ソニー株式会社 固体撮像装置およびその駆動方法、ならびにカメラ装置
WO2005069608A1 (ja) * 2004-01-13 2005-07-28 Matsushita Electric Industrial Co., Ltd. 固体撮像装置およびこれを用いたカメラ
KR100871688B1 (ko) * 2004-02-27 2008-12-08 삼성전자주식회사 고체 촬상 장치 및 그 구동 방법
TWI264086B (en) * 2004-06-04 2006-10-11 Via Tech Inc Method and apparatus for image sensor
CN1981517B (zh) * 2004-07-06 2010-05-26 松下电器产业株式会社 固体摄像装置
JP4481758B2 (ja) * 2004-07-28 2010-06-16 株式会社東芝 信号処理装置及びデータ処理装置
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
KR100657863B1 (ko) 2005-02-07 2006-12-14 삼성전자주식회사 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서
JP4878123B2 (ja) * 2005-02-07 2012-02-15 浜松ホトニクス株式会社 固体撮像装置
KR100691190B1 (ko) * 2005-07-13 2007-03-09 삼성전기주식회사 이미지 센서 어레이
JP5017895B2 (ja) * 2006-03-15 2012-09-05 日産自動車株式会社 赤外線検出装置
JP4956084B2 (ja) * 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
KR100879386B1 (ko) 2006-11-13 2009-01-20 삼성전자주식회사 씨모스 이미지 센서 및 그것을 포함하는 디지털 카메라그리고 씨모스 이미지 센서의 영상 신호 검출 방법
KR100849824B1 (ko) * 2007-03-09 2008-07-31 동부일렉트로닉스 주식회사 이미지센서 및 그 제조방법
US7642498B2 (en) 2007-04-04 2010-01-05 Aptina Imaging Corporation Capacitor multipler circuits and the applications thereof to attenuate row-wise temporal noise in image sensors
JP4311482B2 (ja) 2007-05-17 2009-08-12 ソニー株式会社 撮像回路、ｃｍｏｓセンサ、および撮像装置
JP4386113B2 (ja) 2007-08-03 2009-12-16 ソニー株式会社 参照電圧回路および撮像回路
US7999342B2 (en) * 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
JP2009253559A (ja) * 2008-04-03 2009-10-29 Sharp Corp 固体撮像装置および電子情報機器
JP4618349B2 (ja) 2008-08-11 2011-01-26 ソニー株式会社 固体撮像素子、撮像方法及び撮像装置
US20100252717A1 (en) * 2008-09-29 2010-10-07 Benoit Dupont Active-pixel sensor
US8372108B2 (en) 2009-01-16 2013-02-12 Claret Medical, Inc. Intravascular blood filter
KR101605831B1 (ko) 2009-08-24 2016-03-24 삼성전자주식회사 씨모스 이미지 센서 및 그것의 영상 신호 검출 방법
KR101898297B1 (ko) * 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP2013179479A (ja) * 2012-02-28 2013-09-09 Nikon Corp 固体撮像装置及びこれを用いた電子カメラ
CN104412574B (zh) * 2012-06-27 2017-12-12 松下知识产权经营株式会社 固体摄像装置
US9500752B2 (en) * 2013-09-26 2016-11-22 Varian Medical Systems, Inc. Pixel architecture for imaging devices
JP6502597B2 (ja) * 2015-04-16 2019-04-17 株式会社半導体エネルギー研究所 撮像装置
US9736413B1 (en) * 2016-02-03 2017-08-15 Sony Corporation Image sensor and electronic device with active reset circuit, and method of operating the same
JP6632421B2 (ja) * 2016-02-22 2020-01-22 キヤノン株式会社 固体撮像装置および撮像装置
CN107888807B (zh) * 2016-09-29 2020-07-24 普里露尼库斯股份有限公司 固体摄像装置、固体摄像装置的驱动方法以及电子设备
CN112840638B (zh) 2018-10-24 2024-03-15 宁波飞芯电子科技有限公司 复位方法、复位装置、以及应用其的复位系统和像素阵列
CN111093043B (zh) * 2018-10-24 2021-10-22 宁波飞芯电子科技有限公司 一种辐射接收系统及方法、传感阵列
CN112345909B (zh) * 2019-08-07 2023-10-13 宁波飞芯电子科技有限公司 一种检测方法、检测电路及复位电路
JP7336361B2 (ja) 2019-11-12 2023-08-31 株式会社ジャパンディスプレイ 検出装置
KR20210137811A (ko) 2020-05-11 2021-11-18 삼성전자주식회사 센서 및 전자 장치
US12273642B2 (en) 2022-12-09 2025-04-08 Fairchild Imaging, Inc. Dual-mode column amplifier

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JP3008657B2 (ja) * 1992-03-04 2000-02-14 ソニー株式会社 増幅型固体撮像装置
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
JP4035194B2 (ja) * 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
US5892540A (en) * 1996-06-13 1999-04-06 Rockwell International Corporation Low noise amplifier for passive pixel CMOS imager
JPH1198414A (ja) * 1997-09-16 1999-04-09 Toshiba Corp Ｍｏｓ型固体撮像装置の増幅回路
US6493030B1 (en) * 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6697111B1 (en) * 1998-04-08 2004-02-24 Ess Technology, Inc. Compact low-noise active pixel sensor with progressive row reset
JP4174106B2 (ja) 1998-08-31 2008-10-29 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction
JP3601052B2 (ja) * 1999-03-11 2004-12-15 日本電気株式会社 固体撮像装置
JP4154068B2 (ja) * 1999-04-12 2008-09-24 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム及び画像読取システム
US6424375B1 (en) 1999-09-21 2002-07-23 Pixel Devices, International Low noise active reset readout for image sensors
AU2001293062A1 (en) * 2000-09-25 2002-04-08 Foveon, Inc. Active pixel sensor with noise cancellation
US6459078B1 (en) 2000-12-04 2002-10-01 Pixel Devices International, Inc. Image sensor utilizing a low FPN high gain capacitive transimpedance amplifier
US6339363B1 (en) 2000-12-04 2002-01-15 Pixel Devices International Low FPN high gain capacitive transimpedance amplifier for use with capacitive sensors
JP3734717B2 (ja) * 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ

Also Published As

Publication number Publication date
EP1253781B1 (de) 2004-09-08
JP3734717B2 (ja) 2006-01-11
DE60105393T2 (de) 2005-02-17
TW541832B (en) 2003-07-11
KR100834424B1 (ko) 2008-06-04
CN100429926C (zh) 2008-10-29
CN1383320A (zh) 2002-12-04
US6914631B2 (en) 2005-07-05
EP1253781A2 (de) 2002-10-30
US20020158974A1 (en) 2002-10-31
JP2002330348A (ja) 2002-11-15
KR20020083416A (ko) 2002-11-02
EP1253781A3 (de) 2003-08-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE