JP3734717B2 - イメージセンサ - Google Patents

イメージセンサ Download PDF

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Publication number
JP3734717B2
JP3734717B2 JP2001130148A JP2001130148A JP3734717B2 JP 3734717 B2 JP3734717 B2 JP 3734717B2 JP 2001130148 A JP2001130148 A JP 2001130148A JP 2001130148 A JP2001130148 A JP 2001130148A JP 3734717 B2 JP3734717 B2 JP 3734717B2
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JP
Japan
Prior art keywords
transistor
image sensor
reset
circuit
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001130148A
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English (en)
Japanese (ja)
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JP2002330348A5 (enExample
JP2002330348A (ja
Inventor
真也 鵜戸
政利 國分
主税 土屋
克義 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2001130148A priority Critical patent/JP3734717B2/ja
Priority to TW090132226A priority patent/TW541832B/zh
Priority to EP01310898A priority patent/EP1253781B1/en
Priority to DE60105393T priority patent/DE60105393T2/de
Priority to US10/042,240 priority patent/US6914631B2/en
Priority to KR1020020002666A priority patent/KR100834424B1/ko
Priority to CNB021027242A priority patent/CN100429926C/zh
Publication of JP2002330348A publication Critical patent/JP2002330348A/ja
Publication of JP2002330348A5 publication Critical patent/JP2002330348A5/ja
Application granted granted Critical
Publication of JP3734717B2 publication Critical patent/JP3734717B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2001130148A 2001-04-26 2001-04-26 イメージセンサ Expired - Fee Related JP3734717B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2001130148A JP3734717B2 (ja) 2001-04-26 2001-04-26 イメージセンサ
TW090132226A TW541832B (en) 2001-04-26 2001-12-25 X-Y address type solid-state image pickup device
DE60105393T DE60105393T2 (de) 2001-04-26 2001-12-27 X-Y-Adressen-Festkörperbildaufnehmer
EP01310898A EP1253781B1 (en) 2001-04-26 2001-12-27 X-Y address type solid-state image pickup device
US10/042,240 US6914631B2 (en) 2001-04-26 2002-01-11 Image sensor
KR1020020002666A KR100834424B1 (ko) 2001-04-26 2002-01-17 이미지 센서
CNB021027242A CN100429926C (zh) 2001-04-26 2002-01-24 图象传感器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001130148A JP3734717B2 (ja) 2001-04-26 2001-04-26 イメージセンサ

Publications (3)

Publication Number Publication Date
JP2002330348A JP2002330348A (ja) 2002-11-15
JP2002330348A5 JP2002330348A5 (enExample) 2004-10-07
JP3734717B2 true JP3734717B2 (ja) 2006-01-11

Family

ID=18978574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001130148A Expired - Fee Related JP3734717B2 (ja) 2001-04-26 2001-04-26 イメージセンサ

Country Status (7)

Country Link
US (1) US6914631B2 (enExample)
EP (1) EP1253781B1 (enExample)
JP (1) JP3734717B2 (enExample)
KR (1) KR100834424B1 (enExample)
CN (1) CN100429926C (enExample)
DE (1) DE60105393T2 (enExample)
TW (1) TW541832B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7864094B2 (en) 2008-08-11 2011-01-04 Sony Corporation Solid-state image sensing device, imaging method, and imaging apparatus
US9041380B2 (en) 2007-08-03 2015-05-26 Sony Corporation Reference voltage circuit and image-capture circuit
US11552212B2 (en) 2020-05-11 2023-01-10 Samsung Electronics Co., Ltd. Sensors and electronic devices

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JP2001189893A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 固体撮像装置
JP3734717B2 (ja) 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ
JP4132850B2 (ja) 2002-02-06 2008-08-13 富士通株式会社 Ｃｍｏｓイメージセンサおよびその制御方法
KR100490598B1 (ko) * 2002-11-22 2005-05-17 (주)하이칩스 씨모스 이미지 센서
US7317484B2 (en) 2003-02-26 2008-01-08 Digital Imaging Systems Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
US7280143B2 (en) * 2003-04-14 2007-10-09 Micron Technology, Inc. CMOS image sensor with active reset and 4-transistor pixels
JP4207659B2 (ja) * 2003-05-16 2009-01-14 ソニー株式会社 固体撮像装置およびその駆動方法、ならびにカメラ装置
WO2005069608A1 (ja) * 2004-01-13 2005-07-28 Matsushita Electric Industrial Co., Ltd. 固体撮像装置およびこれを用いたカメラ
KR100871688B1 (ko) * 2004-02-27 2008-12-08 삼성전자주식회사 고체 촬상 장치 및 그 구동 방법
TWI264086B (en) * 2004-06-04 2006-10-11 Via Tech Inc Method and apparatus for image sensor
CN1981517B (zh) * 2004-07-06 2010-05-26 松下电器产业株式会社 固体摄像装置
JP4481758B2 (ja) * 2004-07-28 2010-06-16 株式会社東芝 信号処理装置及びデータ処理装置
US7294818B2 (en) * 2004-08-24 2007-11-13 Canon Kabushiki Kaisha Solid state image pickup device and image pickup system comprising it
KR100657863B1 (ko) 2005-02-07 2006-12-14 삼성전자주식회사 핑거드 타입 소스 폴로워 트랜지스터를 이용한 상보성금속 산화막 반도체 액티브 픽셀 센서
JP4878123B2 (ja) * 2005-02-07 2012-02-15 浜松ホトニクス株式会社 固体撮像装置
KR100691190B1 (ko) * 2005-07-13 2007-03-09 삼성전기주식회사 이미지 센서 어레이
JP5017895B2 (ja) * 2006-03-15 2012-09-05 日産自動車株式会社 赤外線検出装置
JP4956084B2 (ja) * 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
KR100879386B1 (ko) 2006-11-13 2009-01-20 삼성전자주식회사 씨모스 이미지 센서 및 그것을 포함하는 디지털 카메라그리고 씨모스 이미지 센서의 영상 신호 검출 방법
KR100849824B1 (ko) * 2007-03-09 2008-07-31 동부일렉트로닉스 주식회사 이미지센서 및 그 제조방법
US7642498B2 (en) 2007-04-04 2010-01-05 Aptina Imaging Corporation Capacitor multipler circuits and the applications thereof to attenuate row-wise temporal noise in image sensors
JP4311482B2 (ja) 2007-05-17 2009-08-12 ソニー株式会社 撮像回路、ｃｍｏｓセンサ、および撮像装置
US7999342B2 (en) * 2007-09-24 2011-08-16 Taiwan Semiconductor Manufacturing Company, Ltd Image sensor element for backside-illuminated sensor
JP2009253559A (ja) * 2008-04-03 2009-10-29 Sharp Corp 固体撮像装置および電子情報機器
US20100252717A1 (en) * 2008-09-29 2010-10-07 Benoit Dupont Active-pixel sensor
US8372108B2 (en) 2009-01-16 2013-02-12 Claret Medical, Inc. Intravascular blood filter
KR101605831B1 (ko) 2009-08-24 2016-03-24 삼성전자주식회사 씨모스 이미지 센서 및 그것의 영상 신호 검출 방법
KR101898297B1 (ko) * 2010-03-08 2018-09-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 구동 방법
JP2013179479A (ja) * 2012-02-28 2013-09-09 Nikon Corp 固体撮像装置及びこれを用いた電子カメラ
CN104412574B (zh) * 2012-06-27 2017-12-12 松下知识产权经营株式会社 固体摄像装置
US9500752B2 (en) * 2013-09-26 2016-11-22 Varian Medical Systems, Inc. Pixel architecture for imaging devices
JP6502597B2 (ja) * 2015-04-16 2019-04-17 株式会社半導体エネルギー研究所 撮像装置
US9736413B1 (en) * 2016-02-03 2017-08-15 Sony Corporation Image sensor and electronic device with active reset circuit, and method of operating the same
JP6632421B2 (ja) * 2016-02-22 2020-01-22 キヤノン株式会社 固体撮像装置および撮像装置
CN107888807B (zh) * 2016-09-29 2020-07-24 普里露尼库斯股份有限公司 固体摄像装置、固体摄像装置的驱动方法以及电子设备
CN112840638B (zh) 2018-10-24 2024-03-15 宁波飞芯电子科技有限公司 复位方法、复位装置、以及应用其的复位系统和像素阵列
CN111093043B (zh) * 2018-10-24 2021-10-22 宁波飞芯电子科技有限公司 一种辐射接收系统及方法、传感阵列
CN112345909B (zh) * 2019-08-07 2023-10-13 宁波飞芯电子科技有限公司 一种检测方法、检测电路及复位电路
JP7336361B2 (ja) 2019-11-12 2023-08-31 株式会社ジャパンディスプレイ 検出装置
US12273642B2 (en) 2022-12-09 2025-04-08 Fairchild Imaging, Inc. Dual-mode column amplifier

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JP3008657B2 (ja) * 1992-03-04 2000-02-14 ソニー株式会社 増幅型固体撮像装置
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
JP4035194B2 (ja) * 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
US5892540A (en) * 1996-06-13 1999-04-06 Rockwell International Corporation Low noise amplifier for passive pixel CMOS imager
JPH1198414A (ja) * 1997-09-16 1999-04-09 Toshiba Corp Ｍｏｓ型固体撮像装置の増幅回路
US6493030B1 (en) * 1998-04-08 2002-12-10 Pictos Technologies, Inc. Low-noise active pixel sensor for imaging arrays with global reset
US6697111B1 (en) * 1998-04-08 2004-02-24 Ess Technology, Inc. Compact low-noise active pixel sensor with progressive row reset
JP4174106B2 (ja) 1998-08-31 2008-10-29 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction
JP3601052B2 (ja) * 1999-03-11 2004-12-15 日本電気株式会社 固体撮像装置
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JP3734717B2 (ja) * 2001-04-26 2006-01-11 富士通株式会社 イメージセンサ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9041380B2 (en) 2007-08-03 2015-05-26 Sony Corporation Reference voltage circuit and image-capture circuit
US7864094B2 (en) 2008-08-11 2011-01-04 Sony Corporation Solid-state image sensing device, imaging method, and imaging apparatus
US11552212B2 (en) 2020-05-11 2023-01-10 Samsung Electronics Co., Ltd. Sensors and electronic devices
US11855236B2 (en) 2020-05-11 2023-12-26 Samsung Electronics Co., Ltd. Sensors and electronic devices

Also Published As

Publication number Publication date
EP1253781B1 (en) 2004-09-08
DE60105393T2 (de) 2005-02-17
TW541832B (en) 2003-07-11
KR100834424B1 (ko) 2008-06-04
CN100429926C (zh) 2008-10-29
DE60105393D1 (de) 2004-10-14
CN1383320A (zh) 2002-12-04
US6914631B2 (en) 2005-07-05
EP1253781A2 (en) 2002-10-30
US20020158974A1 (en) 2002-10-31
JP2002330348A (ja) 2002-11-15
KR20020083416A (ko) 2002-11-02
EP1253781A3 (en) 2003-08-20

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