CN100426530C - 受光或发光用面板及其制造方法 - Google Patents
受光或发光用面板及其制造方法 Download PDFInfo
- Publication number
- CN100426530C CN100426530C CNB028288599A CN02828859A CN100426530C CN 100426530 C CN100426530 C CN 100426530C CN B028288599 A CNB028288599 A CN B028288599A CN 02828859 A CN02828859 A CN 02828859A CN 100426530 C CN100426530 C CN 100426530C
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- Prior art keywords
- light
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- mentioned
- illuminating panel
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- 238000004519 manufacturing process Methods 0.000 title description 15
- 239000000463 material Substances 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 30
- 239000000057 synthetic resin Substances 0.000 claims abstract description 30
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims description 62
- 238000005253 cladding Methods 0.000 claims description 34
- 239000011248 coating agent Substances 0.000 claims description 23
- 238000000576 coating method Methods 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 18
- 238000012856 packing Methods 0.000 description 11
- 230000003321 amplification Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000005755 formation reaction Methods 0.000 description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 229920005479 Lucite® Polymers 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000005030 aluminium foil Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920001290 polyvinyl ester Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- PLXMOAALOJOTIY-FPTXNFDTSA-N Aesculin Natural products OC[C@@H]1[C@@H](O)[C@H](O)[C@@H](O)[C@H](O)[C@H]1Oc2cc3C=CC(=O)Oc3cc2O PLXMOAALOJOTIY-FPTXNFDTSA-N 0.000 description 1
- 241001076960 Argon Species 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical class [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 Merlon Polymers 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 235000013876 argon Nutrition 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1017—Shape being a sphere
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2002/004415 WO2003094248A1 (en) | 2002-05-02 | 2002-05-02 | Light-receiving panel or light-emitting panel, and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1625812A CN1625812A (zh) | 2005-06-08 |
CN100426530C true CN100426530C (zh) | 2008-10-15 |
Family
ID=29287951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028288599A Expired - Fee Related CN100426530C (zh) | 2002-05-02 | 2002-05-02 | 受光或发光用面板及其制造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US7238966B2 (zh) |
EP (1) | EP1511086A4 (zh) |
JP (1) | JP3902210B2 (zh) |
KR (1) | KR100652916B1 (zh) |
CN (1) | CN100426530C (zh) |
AU (1) | AU2002255303B2 (zh) |
CA (1) | CA2483363C (zh) |
TW (1) | TW550830B (zh) |
WO (1) | WO2003094248A1 (zh) |
Families Citing this family (68)
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CA2456671C (en) * | 2001-08-13 | 2009-09-22 | Josuke Nakata | Light emitting or light receiving semiconductor module and making method thereof |
WO2003017383A1 (en) * | 2001-08-13 | 2003-02-27 | Josuke Nakata | Semiconductor device and method of its manufacture |
AU2001295987B2 (en) * | 2001-10-19 | 2005-10-20 | Sphelar Power Corporation | Light emitting or light receiving semiconductor module and method for manufacturing the same |
KR100652916B1 (ko) | 2002-05-02 | 2006-12-01 | 죠스케 나카다 | 수광 또는 발광용 패널 및 그 제조 방법 |
JP4021441B2 (ja) | 2002-06-21 | 2007-12-12 | 仗祐 中田 | 受光又は発光用デバイスおよびその製造方法 |
US7387400B2 (en) * | 2003-04-21 | 2008-06-17 | Kyosemi Corporation | Light-emitting device with spherical photoelectric converting element |
DE60326666D1 (de) * | 2003-06-09 | 2009-04-23 | Kyosemi Corp | Generatorsystem |
CN1771608A (zh) * | 2003-10-24 | 2006-05-10 | 京半导体股份有限公司 | 受光或发光模块板及其制造方法 |
JP4780951B2 (ja) * | 2003-11-27 | 2011-09-28 | 京セラ株式会社 | 光電変換装置 |
WO2006071806A2 (en) | 2004-12-27 | 2006-07-06 | Quantum Paper, Inc. | Addressable and printable emissive display |
KR101187943B1 (ko) | 2005-09-20 | 2012-10-05 | 르네사스 일렉트로닉스 가부시키가이샤 | Led 광원 및 그 제조 방법 |
AU2006345821B2 (en) * | 2006-07-04 | 2010-09-16 | Sphelar Power Corporation | Panel-shaped semiconductor module |
TWI466304B (zh) * | 2006-07-07 | 2014-12-21 | Energy Related Devices Inc | 與球形光伏特電池彈性耦合的微型集中器 |
KR101045753B1 (ko) | 2006-07-07 | 2011-06-30 | 에너지 릴레이티드 디바이시스, 인코오포레이티드 | 패널형 반도체모듈 |
CA2658781A1 (en) * | 2006-08-07 | 2008-02-14 | Kyosemi Corporation | Semiconductor module for power generation or light emission |
CA2618881C (en) * | 2007-01-24 | 2014-04-08 | William Beck (Bill) J. | Coated solar panel |
JP5100180B2 (ja) * | 2007-03-30 | 2012-12-19 | パナソニック株式会社 | 発光素子および製造方法 |
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US9018833B2 (en) | 2007-05-31 | 2015-04-28 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting or absorbing diodes |
US8415879B2 (en) | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8456392B2 (en) | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
US8889216B2 (en) | 2007-05-31 | 2014-11-18 | Nthdegree Technologies Worldwide Inc | Method of manufacturing addressable and static electronic displays |
US9534772B2 (en) | 2007-05-31 | 2017-01-03 | Nthdegree Technologies Worldwide Inc | Apparatus with light emitting diodes |
US8674593B2 (en) | 2007-05-31 | 2014-03-18 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8846457B2 (en) | 2007-05-31 | 2014-09-30 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8809126B2 (en) | 2007-05-31 | 2014-08-19 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US9343593B2 (en) | 2007-05-31 | 2016-05-17 | Nthdegree Technologies Worldwide Inc | Printable composition of a liquid or gel suspension of diodes |
US8877101B2 (en) | 2007-05-31 | 2014-11-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, power generating or other electronic apparatus |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US9419179B2 (en) | 2007-05-31 | 2016-08-16 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US8133768B2 (en) | 2007-05-31 | 2012-03-13 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
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US7992332B2 (en) | 2008-05-13 | 2011-08-09 | Nthdegree Technologies Worldwide Inc. | Apparatuses for providing power for illumination of a display object |
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WO2010016098A1 (ja) * | 2008-08-08 | 2010-02-11 | 京セミ株式会社 | 採光型太陽電池モジュール |
DE102008038184A1 (de) * | 2008-08-19 | 2010-02-25 | Suss Microtec Test Systems Gmbh | Verfahren und Vorrichtung zur temporären elektrischen Kontaktierung einer Solarzelle |
US20100101627A1 (en) * | 2008-10-26 | 2010-04-29 | Patel Pradyumna V | Flexible solar panel module |
KR101267545B1 (ko) * | 2009-02-27 | 2013-05-24 | 도시바 라이텍쿠 가부시키가이샤 | 발광모듈 및 조명장치 |
US8723016B2 (en) * | 2009-07-14 | 2014-05-13 | Honeywell International Inc. | Low profile solar concentrator |
WO2011023139A1 (en) * | 2009-08-31 | 2011-03-03 | Byd Company Limited | Solar battery assembly |
TWI539631B (zh) * | 2009-09-15 | 2016-06-21 | 無限科技全球公司 | 製造發光、光伏或其它電子裝置及系統的方法 |
JP5430767B2 (ja) * | 2010-08-26 | 2014-03-05 | 京セミ株式会社 | 半導体素子付き織網基材、その製造方法及びその製造装置 |
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Also Published As
Publication number | Publication date |
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US20060043390A1 (en) | 2006-03-02 |
WO2003094248A1 (en) | 2003-11-13 |
CA2483363C (en) | 2009-07-07 |
KR100652916B1 (ko) | 2006-12-01 |
CA2483363A1 (en) | 2003-11-13 |
JP3902210B2 (ja) | 2007-04-04 |
AU2002255303A1 (en) | 2003-11-17 |
EP1511086A1 (en) | 2005-03-02 |
CN1625812A (zh) | 2005-06-08 |
KR20050007374A (ko) | 2005-01-17 |
JPWO2003094248A1 (ja) | 2005-09-08 |
US7238966B2 (en) | 2007-07-03 |
AU2002255303B2 (en) | 2006-07-06 |
EP1511086A4 (en) | 2007-02-28 |
TW550830B (en) | 2003-09-01 |
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