TW200924232A - Light emitting diode capable of radiating light and dissipating heat in dual directions - Google Patents

Light emitting diode capable of radiating light and dissipating heat in dual directions Download PDF

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Publication number
TW200924232A
TW200924232A TW096144841A TW96144841A TW200924232A TW 200924232 A TW200924232 A TW 200924232A TW 096144841 A TW096144841 A TW 096144841A TW 96144841 A TW96144841 A TW 96144841A TW 200924232 A TW200924232 A TW 200924232A
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light
led
wafer
emitting
emitting diode
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TW096144841A
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Chinese (zh)
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TWI420692B (en
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ben-zhuang Zou
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Lin Pin Ya
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

The invention is about a light emitting diode (LED) and is especially about a LED capable of radiating light and dissipating heat in dual directions. The LED has vias on a top side and a bottom side of a substrate, respectively, and, within the vias, at least a chip is positioned. The chip's positive and negative terminals are wire-connected to leads outside a lens of the LED. The chip is embedded in a transparent and heat-insulating dielectric material and, on an external surface of the dielectric material or the lens, a layer of fluorescent agent is provided. With the top and bottom vias, the chip is able to radiate light to both the top and bottom directions of the LED, thereby increasing the lighting performance for 16-36%. In addition, with the dielectric material to separate the fluorescent agent and the chip, the fluorescent agent's aging from heat and blackening from carbonization are slow down. The LED's color temperature and brightness are therefore stabilized and the luminous flux is effectively maintained above 90% of its initial value.

Description

200924232 九、發明說明： 【發明所屬之技術領域】 本發明涉及發光二極體（LED)的技術領域，尤指一種具 有雙向發光散熱的發光二極體。 【先前技術】 發光二極體（LED)是一種半導體固體發光器件，它是利 用固體半導體晶片做為發光材料，當兩端加上正向電壓，BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the technical field of light-emitting diodes (LEDs), and more particularly to a light-emitting diode having two-way light-emitting heat dissipation. [Prior Art] A light-emitting diode (LED) is a semiconductor solid-state light-emitting device which uses a solid semiconductor wafer as a light-emitting material, and when a forward voltage is applied to both ends,

半導體中的載流子發生複合引起光子發射而產生光，為當 今最熱門的光源技術。 LED光源的特點是節能’消耗能量較同光效的白熾燈 減少80% ;使用低壓電源（在6_24V之間），安全性佳；體 積小，可以製成各種形狀的器件；壽命長；反應時間快， 白熾燈的反應時間為毫秒級，LED燈的反應時間為奈秒級 ;無有害金屬采對環境的污染等，隨著大㈣咖燈的開 ^應用’ LED燈已從點光源朝功能性照明的方向發展，其 前景無比廣闊。 … 曰然而，從應用中發現，目前國内外生產的咖燈，特 別是白光LED燈有以下明顯的缺失： 二晶=出光的利用率低·•如圖i、2所示的現有技 靠在碗=片〇2或晶片4單面發光’晶片02或晶片4 4= c’而只能以發熱的形式通過碗杯 能源的浪費或光通量的減少。 #失疋仏成 2、白光二極體的色溫較性差、產品使用壽命低··如 200924232 f 1所不的現有技術卜該LED燈是由㈣腿式的引線支 架01及設於一支架碗杯中的晶片〇2、覆蓋晶片02上的榮 先粉03和封裝晶片02的環氧樹月旨〇4戶斤組成，其缺點是環 ^樹脂0 4封裝時將晶片〇 2及螢光粉G 3無縫隙地包覆，晶 片02發出的光和熱使得螢光粉〇3加速老化。由於環氧 月=厚實封裝使得LED的散熱效果變差，加之兩條腿式的The recombination of carriers in a semiconductor causes photon emission to generate light, which is the hottest light source technology of the day. LED light source is characterized by energy saving '80% reduction in energy consumption compared with incandescent lamps with light efficiency; low voltage power supply (between 6 and 24V), good safety; small size, can be made into various shapes of devices; long life; reaction time Fast, the reaction time of incandescent lamp is millisecond, the reaction time of LED lamp is nanosecond; no harmful metal mining pollution to the environment, etc., with the opening of the large (four) coffee lamp ^ LED light has been from point light source to function The direction of the development of sexual lighting, its prospects are vast. ... However, it has been found from the application that the current domestic and international production of coffee lamps, especially white LED lamps, has the following obvious defects: The use of two crystals = light output is low. • The prior art shown in Figures i and 2 relies on The bowl = wafer 2 or the wafer 4 has a single-sided illumination 'wafer 02 or wafer 4 4 = c' and can only pass through the cup energy waste or reduce the luminous flux in the form of heat. #失疋仏成2, white light diode color temperature is poor, product life is low. · For example, 200924232 f 1 is not the prior art. The LED lamp is made up of (four) leg type lead frame 01 and is set in a bracket bowl The wafer 〇2 in the cup, the glory powder 03 on the wafer 02, and the epoxy resin package packaged on the wafer 02 are composed of 4 jin. The disadvantage is that the wafer 〇2 and the phosphor powder are packaged in the ring 0 resin. G 3 is covered without gaps, and the light and heat emitted from the wafer 02 accelerates the aging of the phosphor powder. Due to the epoxy month = thick package, the heat dissipation effect of the LED is deteriorated, plus the two-legged

、、支架G1的散熱能力不足，均導致LED的光效和 的降低。 P 針對上述產品的不足，申請人的中華民國專利 M312775號（圖2 ’現有技術2)對LED燈進行了改良，該 led產品是柱狀基板2上設置有碗杯3，在碗杯3内設置/ 有晶片4,在晶片4的外表面塗有一層螢光粉5,基板^用 抗紫外線的中空的透鏡罩7封罩’在透鏡罩7的空腔内填 充有情性氣體8’晶片4的正負極分別用引線6引出並與 延=至透鏡罩7之外的導腳丨連線。該結構由於柱狀基板 ¥腳1及惰性氣體8的導熱性’使晶片4周圍的溫度有 所降低，但是，經研究發現該結構由於晶片4 直接接觸，螢絲5直賤熱，導致螢絲5容\=老5 化及奴化發黑’使藍光晶片發出的藍光與螢光粉5結合生 成的白色光在短時間内產生光通量降低、大幅度的光衰減 色脈改I，直至死燈即LED燈報廢；因此，只有降低 光粉的環境溫度，才能防止螢光粉的老化及碳化發黑 持色溫不發生變化，進一步延長LED燈的工作 LED燈的光效。 ％回 200924232 【發明内容】 本發明的目的是提供—種進—步提高晶片發出光的利 用率、降底瑩光粉的環境溫度、延長LED燈的工作壽命的 雙向發光散熱的發光二極體。 根據上述目的的本發明的雙向發光散熱的發光二極體 ’發光一極體基板設—通孔，其通孔内至少固$有一個晶 片，晶片的正、負電極分別用引線引出並與延伸至透鏡罩 外的導腳連接；晶片外表面設置有透光、隔熱的介質，在 、介質的外表面或透鏡罩上設置有一層榮光粉，該透鏡罩係 罩住晶片。 上述的晶片為紅光晶片、黃光晶片、藍光晶片、綠光 晶片或橙光晶片其中一種。 上述的通孔係於發光二極體的基板上下側邊開設兩個 底部相連的杯狀的凹槽所構成，令依此構成的發光二極體 可由此通孔而上下兩側發光。 I) 上述的基板係用PCB基、銅基、鋁基、或鐵基其中一 種材料製作。 、 上述的透鏡罩與介質之間可設置有空腔，在空腔内填 充有氮軋、氦氣、氖氣、氬氣、氙氣之一的惰性氣體。 上述的透鏡罩係以抗紫外線的光學玻璃、光學塑料、 樹脂、矽膠、環氣樹脂或陶瓷其中一種製作；透鏡罩的外 形為圓形、橢圓形、半圓形、平面形、方形或蜂寓六角形 其中一種。 上述的介質係用隔熱、透光、抗紫外線的石夕膠、環氣 200924232 樹脂、陶瓷、光學塑料或光學玻璃材料製作。 上述的螢光粉設置在透鏡罩上係指設置在透鏡罩的夾 外層内、透鏡罩的内表面、透鏡罩的外表面或混合在製作 透鏡罩的材料内。 本發明的雙向發光散熱的發光二極體的用途，可用於 製做LED照明燈、LED信號燈、LED指示燈、LED裝飾 燈、LED燈帶、LED燈杯、LED節能燈、LED地埋燈、LED 輪廓燈、LED投光燈等發光燈具。 本發明較現有技術1、2突出的優點是： 1、 提高LED燈的光效：由於本發明可使LED晶片的 雙面發光，經試驗驗證，本發明比同功率的分別提高光效 36%和 16%。 2、 穩定LED燈的發光強度：由於本發明將螢光粉利 用介質將螢光粉與晶片隔離，並利用介質的隔熱性使晶片 發光所激發出的熱量大部分被金屬基板帶走，少部分被光 帶走，使螢光粉周圍的環境溫度較現有技術降低，螢光粉 老化及碳化發黑的速度變緩，使LED燈的色溫保持不變暨 能穩定發光強度。 3、 延長LED燈的使用壽命：由於本發明的螢光粉與 晶片不直接接觸，使螢光粉的環境溫度降低，不易使螢光 粉受熱導致迅速老化及碳化發黑，從而延長了 LED燈的工 作壽命，經試驗驗證，LED燈在5000小時老化後，現有技 術1的光通量僅有初始光通量的10%，現有技術2的光通 量為初始光通量的85%，而本發明的光通量為初始光通量 200924232 的90%以上，使以本發明· 長。 月I作的LED燈的工作壽命大大延 【實施方式】 如下以具體實施例對本發明做進-步描述： 實施例1 請參見圖3、4。本發明的雙 ，係於發光二極體基板1〇上 ;、的毛先-極體 形成為一通孔15。該通孔内b至少固 疋有個晶片20，晶片的正、負八 並盥延伸至透镑置4n从从替負電極刀別用引線21引出 ” k 1甲至透鏡罩40外的導腳域垃·曰u , 有透光、隔熱的介質30,在介質的=，日曰片外表面設置 .^ 仕"貝的外表面或透鐘置卜洲·署 有一層螢光粉Μ，該透鏡㈣旱住晶片。 5又置 上述的晶片20為紅光晶片、黃光晶片、 光晶片或橙光晶片其中一種。 曰日片、，、彔 上述的基板10係由PCB基、銅基、 中一種的材料製成。 .土、或鐵基其 述的介f 3G細隔熱H抗料線的發膠、環 乳树月日、陶究、光學塑料或光學玻璃等材料製作。， 上，的透鏡罩40的材料為抗紫外線的光學破璃 蚪、樹月曰、矽膠、環氣樹脂或陶瓷其 二 形其尹-種。 叫方形或蜂高六角 =透鏡罩4。與介質3。之間所形成的空 真充有氣亂、乱氣、氛氣、氯氣、氣氣之一的惰性氣體内了 200924232 上述β又置在透鏡罩40上的螢光粉31，可以設置在透 鏡罩的夾層内、透鏡罩的内表面、透鏡罩的外表面或混合 在製作透鏡罩的材料内。 實施例2 睛參見圖5。本實施例的基本結構與實施例丨大致相 同，差異在實施例1的螢光粉係直接施於介質30表面，而 本實施例的一層螢光粉31係設置在上下透鏡罩4〇的夾層 内。 實施例3 、請參見圖6、7。本實施例採用的基板、晶片、杯狀的 通孔、介質、惰性氣體、引線及導腳與實施例丨或實施例 2大致相同，只是將多個LED燈組件安裝在一個金屬盒體 5〇内，盒體50的上下部均用抗紫外線的光學玻璃、光學 塑料、樹脂、矽膠、環氧樹脂或陶瓷材料製作成上、下平 面透鏡罩4!封蓋，而螢光粉31係設置在透鏡罩41的夾層 内，當然，在本實施例中也可以將螢光粉設置在透鏡罩的 内表面，或透鏡罩的外表φ，或混合在製作透鏡罩的材料 内，也可以像實施例丨那樣，將螢光粉設置在介質的外表 面。本實施例的晶片的正、負電極分別用引線引出再分別 與導腳並聯連接，LED的數量可視光照強度的需求而增減 。本實施例除螢光粉被介質隔熱外，加上金屬盒體散熱性 佳及散熱空間加大，因此，使得LED的穩定性變好、光效 增大L壽命增長，試驗證明，螢光粉的環境溫度越低，其 工作環境就越好，光效就越大，壽命就越長。 200924232 利用所述的雙向發光散熱的發光二極體可製造出系列 的LED照明燈、LED信號燈、LED指示燈、LED裝飾燈 、:LED燈帶、LED燈杯、LED節能燈、LED地埋燈、LED 輪廓燈、LED投光燈等各種發光燈具，製作時可利用現有 的燈具的引腳及外部結構，連接定位上本發明的結構即可 ，也可針對人們的不同需求重新設計製造新式的燈具，以 達到真正節省能源的目的。The heat dissipation capability of the bracket G1 is insufficient, which leads to a reduction in the light efficiency of the LED. In view of the deficiencies of the above products, the applicant's Republic of China Patent No. M312775 (Fig. 2 'Prior Art 2) has improved the LED lamp, which is provided with a bowl 3 on the column substrate 2, in the bowl 3 The wafer 4 is disposed/coated with a layer of phosphor powder 5 on the outer surface of the wafer 4, and the substrate is sealed with a hollow lens cover 7 that is resistant to ultraviolet rays. 'The cavity of the lens cover 7 is filled with an inert gas 8' wafer 4 The positive and negative electrodes are respectively led out by the lead wires 6 and connected to the guide pins other than the lens cover 7. This structure reduces the temperature around the wafer 4 due to the thermal conductivity of the column substrate 1 and the inert gas 8. However, it has been found that the structure is directly contacted by the wafer 4, and the filament 5 is directly heated, resulting in a filament. 5容\=老五化和奴化黑黑' The white light generated by the combination of the blue light emitted by the blue light wafer and the phosphor powder 5 causes a decrease in luminous flux in a short time, and a large light attenuation color pulse change I, until the dead light is LED lights are scrapped; therefore, only by reducing the ambient temperature of the light powder, it is possible to prevent the aging of the fluorescent powder and the blackening of the carbonization without changing the color temperature, and further prolong the light effect of the working LED lamp of the LED lamp. %回200924232 SUMMARY OF THE INVENTION The object of the present invention is to provide a two-way light-emitting diode for improving the utilization ratio of light emitted from a wafer, lowering the ambient temperature of the phosphor powder, and extending the working life of the LED lamp. . According to the present invention, the bidirectional light-emitting and dissipating light-emitting diode of the invention has a light-emitting diode substrate having a through hole having at least one wafer in the through hole, and the positive and negative electrodes of the wafer are respectively led and extended by the lead wires. The guide pins are connected to the outside of the lens cover; the outer surface of the wafer is provided with a light-transmissive, heat-insulating medium, and a layer of glory powder is disposed on the outer surface of the medium or the lens cover, and the lens cover covers the wafer. The above wafer is one of a red wafer, a yellow wafer, a blue wafer, a green wafer or an orange wafer. The above-mentioned through holes are formed by two cup-shaped recesses connected at the bottom side of the upper and lower sides of the substrate of the light-emitting diode, so that the light-emitting diodes thus constructed can be illuminated by the through holes and the upper and lower sides. I) The above substrate is made of one of a PCB base, a copper base, an aluminum base, or an iron base. A cavity may be disposed between the lens cover and the medium, and the cavity is filled with an inert gas of one of nitrogen rolling, helium gas, neon gas, argon gas, and helium gas. The lens cover is made of one of ultraviolet light-resistant optical glass, optical plastic, resin, silicone, epoxy resin or ceramic; the lens cover has a circular, elliptical, semi-circular, planar, square or bee shape. One of the hexagons. The above medium is made of heat-insulating, light-transmitting, UV-resistant Shixi gum, ring gas 200924232 resin, ceramic, optical plastic or optical glass material. The above-mentioned phosphor powder is disposed on the lens cover to be disposed in the outer layer of the lens cover, the inner surface of the lens cover, the outer surface of the lens cover, or the material mixed in the lens cover. The utility model of the bidirectional light-emitting and heat-dissipating light-emitting diode of the invention can be used for manufacturing LED illumination lamp, LED signal lamp, LED indicator lamp, LED decorative lamp, LED lamp strip, LED lamp cup, LED energy-saving lamp, LED underground lamp, LED luminaires such as LED outline lamps and LED floodlights. The advantages of the present invention over the prior art 1 and 2 are as follows: 1. Improve the light effect of the LED lamp: Since the invention can make the LED chip emit light on both sides, the invention proves that the invention improves the light efficiency by 36% respectively compared with the same power. And 16%. 2. Stabilizing the luminous intensity of the LED lamp: Since the present invention separates the fluorescent powder from the wafer by using the fluorescent powder, and using the heat insulating property of the medium, most of the heat generated by the light emission of the wafer is taken away by the metal substrate, and less Part of the light is taken away, so that the ambient temperature around the phosphor powder is lower than the prior art, and the aging of the phosphor powder and the blackening of the carbonization become slow, so that the color temperature of the LED lamp remains unchanged and the luminous intensity can be stabilized. 3. Extend the service life of the LED lamp: Since the phosphor powder of the invention is not in direct contact with the wafer, the ambient temperature of the phosphor powder is lowered, and the phosphor powder is not easily heated to cause rapid aging and carbonization, thereby extending the LED lamp. The working life is verified by experiments. After the LED lamp is aged for 5000 hours, the luminous flux of the prior art 1 is only 10% of the initial luminous flux, and the luminous flux of the prior art 2 is 85% of the initial luminous flux, and the luminous flux of the present invention is the initial luminous flux 200924232. More than 90% of the length of the invention is made. The working life of the LED lamp made by the month I is greatly extended. [Embodiment] The present invention will be further described in the following specific embodiments: Embodiment 1 Please refer to Figs. The double body of the present invention is attached to the light-emitting diode substrate 1; the hair precursor-pole body is formed as a through hole 15. In the through hole b, at least one wafer 20 is fixed, and the positive and negative yokes of the wafer are extended to the thief set 4n, and the lead pin from the negative electrode knives lead wire 21 is taken out to the outside of the lens cover 40. Domain la·曰u, medium with light transmission and heat insulation 30, in the medium =, the outer surface of the sundial is set. ^ Shi " shell's outer surface or through the bell set Buzhou · Department has a layer of fluorescent powder The lens (4) is used to dry the wafer. 5 The above-mentioned wafer 20 is one of a red wafer, a yellow wafer, an optical wafer or an orange wafer. The wafer 10, the substrate 10 described above is made of a PCB base and copper. Made of a material of one or the other. The earth, or the iron-based material of the f 3G fine heat-insulating H-resistant wire, the ring-shaped milk tree, the ceramic, the optical plastic or the optical glass. The material of the lens cover 40 is an ultraviolet-resistant optical glass, a tree moon, a tannin, a ring-shaped resin or a ceramic, and its shape is called a square or a bee high hexagon = a lens cover 4. and a medium 3 The inert gas formed by the air between the air, the gas, the gas, the gas, and the gas is in the air. The phosphor powder 31 on the lens cover 40 may be disposed in the interlayer of the lens cover, the inner surface of the lens cover, the outer surface of the lens cover or the material mixed in the lens cover. Embodiment 2 The eye is shown in Fig. 5. This embodiment The basic structure of the example is substantially the same as that of the embodiment, and the phosphor powder of the first embodiment is directly applied to the surface of the medium 30, and the phosphor powder 31 of the present embodiment is disposed in the interlayer of the upper and lower lens covers 4A. Embodiment 3 Referring to Figures 6 and 7. The substrate, the wafer, the cup-shaped through hole, the medium, the inert gas, the lead wire and the lead pin used in this embodiment are substantially the same as the embodiment or the embodiment 2 except that a plurality of The LED lamp assembly is mounted in a metal case 5〇, and the upper and lower parts of the case 50 are made of upper and lower flat lens covers 4 by using ultraviolet-resistant optical glass, optical plastic, resin, silicone, epoxy or ceramic material! The cover is arranged, and the phosphor powder 31 is disposed in the interlayer of the lens cover 41. Of course, in the embodiment, the phosphor powder may be disposed on the inner surface of the lens cover, or the outer surface of the lens cover φ, or mixed in the production. Inside the material of the lens cover, The phosphor powder may be disposed on the outer surface of the medium as in the embodiment. The positive and negative electrodes of the wafer of the present embodiment are respectively lead-out and connected in parallel with the lead pins, and the number of LEDs may be dependent on the light intensity requirement. In addition, the phosphor powder is insulated by the medium, and the heat dissipation of the metal case is good and the heat dissipation space is increased. Therefore, the stability of the LED is improved, the light effect is increased, and the life of the LED is increased. The lower the ambient temperature of the phosphor powder, the better the working environment, the greater the light efficiency and the longer the life. 200924232 The series of LED lights can be manufactured by using the two-way light-emitting diodes. LED signal lights, LED indicators, LED decorative lights, LED lights, LED light cups, LED energy-saving lamps, LED underground lights, LED outline lights, LED flood lights, and other lighting fixtures, can be used to make use of existing lamps The pin and the external structure can be connected and positioned to the structure of the present invention, and the new type of lamp can be redesigned and manufactured according to different needs of people, so as to achieve the purpose of real energy saving.

11 200924232 【圖式簡單說明】 圖1是現有技術1的結構示意圖； 圖2是現有技術2的結構示意圖； 圖3是本發明實施例1-3中基板的剖視示意圖； 圖4是本發明實施例1的結構前視示意圖； 圖5是本發明實施例2的結構前視示意圖； 圖6是本發明實施例3的俯視示意圖； 圖7是圖6的A-A剖視圖。 【主要元件符號說明】 3碗杯 4 晶片 5螢光粉 6引線 7透鏡罩 8惰性氣體 30介質 31螢光粉 32空腔 40、41透鏡罩 50盒體 既知技術 01引線支架 02晶片 03螢光粉 04環氧樹脂 1導腳 2柱狀基板 本發明 10基板 11、12凹槽 15通孔 20晶片 21引線 22導腳 12BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a prior art 1; FIG. 2 is a schematic structural view of a prior art 2; FIG. 3 is a cross-sectional view of a substrate according to Embodiment 1-3 of the present invention; FIG. 5 is a schematic front view of a third embodiment of the present invention; FIG. 7 is a plan view of a third embodiment of the present invention; FIG. [Main component symbol description] 3 bowls 4 wafer 5 fluorescent powder 6 lead 7 lens cover 8 inert gas 30 medium 31 fluorescent powder 32 cavity 40, 41 lens cover 50 box known technology 01 lead bracket 02 wafer 03 fluorescent Powder 04 Epoxy 1 Leading 2 Columnar Substrate 10 Substrate 11, 12 Groove 15 Through Hole 20 Wafer 21 Lead 22 Lead 12

Claims (1)

200924232 十、申請專利範圍： 1.一種雙向發光散熱的發光二極體，係於發光二極體基板 上下侧邊開設一通孔，通孔内至少固定有一個晶片，晶片 的正、負電極分別用引線引出並與延伸至一透鏡罩外的導 腳連接；晶片外表面設置有透光、隔熱的介質，介質的外 側設置有一層螢光粉，並且該透鏡罩罩住晶片。 2·如申請專利範圍帛1項所述的雙向發光散熱的發光二極 體、，其中所述的晶片為紅光晶片、黃光晶片、藍光晶片、 綠光晶片或撥光晶片其中一種。 申π專利㈣帛1項所述的雙向發光散熱的發光二極 中所述的通孔係、開設於發光二極體基板上下側邊的 兩個底部相連的杯狀的凹槽。 4.Γ:專利細1項所述的雙向發光散熱的發光二極 所述基板㈣料係PCB基、銅基、㈣ 卷其中一種。 V, •如申凊專利範圍第1項 體，盆由 的又向發光散熱的發光二極 充有氮的透鏡罩與介質之間形成-空腔，空腔内填 兄有虱軋、氮氣、氖氣、氯 6. 如申請專利範圍第i項所述的：氮之一的惰性氣體。 體，其中所述的透鏡罩的材料為^發光散熱的發光二極 :塑料、樹脂環氣:1=二的光:玻透= 的外形為圓形、橢圓形、半圓/陶是其中一種，透鏡罩 角形其中—種。 干圓形、平面形、方形或蜂窩六 7. 如申請專利範圍第丨項所 <的雙向發光散熱的發光二極 13 200924232 透光、抗紫外線㈣膠、 %讀月曰、陶竞、光學 8.如申請專利範圍第i 璃-中種 ㉟，1 Φ娇、+·从灿 、斤< 的雙向發光散熱的發光二極 二:Γ勞光粉設置在介質的外表面。 體，其中所述的螢光散熱的發光二極 H)如…二 置在透鏡罩的内或外表面。 體，：中所过:圍/ 1項所述的雙向發光散熱的發光二極 二、^^粉設置在透鏡罩的夾層内。 體，其十张、/圍弟1項所述的雙向發光散熱的發光二極 12.-種*且述的螢光粉混合在製作透鏡罩的材料内。 散熱的發光H3。申睛專利範圍第1項所述的雙向發光 ^專利範㈣12項料㈣具，為L E D照明燈、 燈杯、L' \ LED指示燈、LED裝飾燈、LED燈帶、LED 光燈其中D筇忐燈、LED地埋燈、LED輪廓燈、LED投 ’、T —種。 14200924232 X. Patent application scope: 1. A two-way light-emitting diode for light-emitting diodes, which is provided with a through hole on the upper and lower sides of the light-emitting diode substrate, at least one wafer is fixed in the through-hole, and the positive and negative electrodes of the wafer are respectively used The lead is led out and connected to a lead extending outside a lens cover; the outer surface of the wafer is provided with a light transmissive, thermally insulating medium, a layer of phosphor is disposed on the outside of the medium, and the lens cover covers the wafer. 2. The bidirectional light-emitting heat-emitting diode according to claim 1, wherein the wafer is one of a red wafer, a yellow wafer, a blue wafer, a green wafer or a light-emitting wafer. The through hole system described in the bidirectional light-emitting and heat-dissipating light-emitting diode according to the above-mentioned item (4), wherein the two bottom portions connected to the upper and lower sides of the light-emitting diode substrate are cup-shaped grooves. 4. Γ: The bidirectional light-emitting and heat-dissipating light-emitting diode described in the patent item 1 is a substrate, a copper base, and a (four) coil. V, • As for the first item of the patent scope of the application, the lens is formed by a cavity between the lens cover and the medium, which is cooled by the light-emitting diode, and the cavity is filled with nitrogen, Helium, chlorine 6. An inert gas of one of nitrogen as described in the scope of claim i. Body, wherein the material of the lens cover is a light-emitting diode for emitting heat: plastic, resin ring gas: 1 = two light: glass transparent = circular shape, elliptical shape, semi-circular / ceramic is one of them. The lens cover has an angular shape. Dry round, flat, square or honeycomb. 6. 7. Bidirectional light-emitting and heat-emitting diode 13 according to the scope of the patent application. 200924232 Light-transmitting, anti-ultraviolet (four) glue, % reading moon, Tao Jing, optics 8. For example, the application scope of the i-glass-medium 35,1 Φ, +· from the can, the jin < two-way illuminating heat-emitting diode 2: Γ 光 光 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置 设置The body, wherein the fluorescent heat-dissipating light-emitting diodes H) are disposed on the inner or outer surface of the lens cover. Body: In the middle of the lens cover, the two-way light-emitting diodes of the two-way light-emitting diodes are arranged in the interlayer of the lens cover. The body, the light-emitting diodes of the two-way light-emitting heat dissipation described in the above-mentioned tenth, and the second generation, are mixed in the material of the lens cover. Cooling light H3. The two-way illuminating method patent (4) 12 items (four) mentioned in the first paragraph of the scope of the patent scope is LED lighting, lamp cup, L' \ LED indicator, LED decorative light, LED light strip, LED light. Xenon lamps, LED buried lights, LED outline lights, LED cast ', T-type. 14
TW096144841A 2007-11-26 2007-11-26 Light emitting diode capable of radiating light and dissipating heat in dual directions TW200924232A (en)

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US7238966B2 (en) * 2002-05-02 2007-07-03 Josuke Nakata Light-receiving panel or light-emitting panel, and manufacturing method thereof
US8134292B2 (en) * 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
TWM281249U (en) * 2004-11-29 2005-11-21 Ren-Nan Luo Lamp box structure
US20070241661A1 (en) * 2006-04-12 2007-10-18 Yin Chua B High light output lamps having a phosphor embedded glass/ceramic layer
US20070269915A1 (en) * 2006-05-16 2007-11-22 Ak Wing Leong LED devices incorporating moisture-resistant seals and having ceramic substrates

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