CN201396621Y

CN201396621Y - High-power LED light source structure

Info

Publication number: CN201396621Y
Application number: CN2009201584048U
Authority: CN
Inventors: 黄尔南
Original assignee: FUJIAN LANLAN HIGH TECHNOLOGY DEVELOPMENT CO LTD
Current assignee: FUJIAN LANLAN HIGH TECHNOLOGY DEVELOPMENT CO LTD
Priority date: 2009-05-25
Filing date: 2009-05-25
Publication date: 2010-02-03
Anticipated expiration: 2019-05-25

Abstract

The utility model relates to the LED field, in particular to a high-power LED light source structure. The high-power LED light source structure comprises a copper basal plate comprising an insulated basal plate layer and a copper foil layer covered thereon, a plurality of LED sheets arranged on the copper basal plate in the matrix way, and a heat radiator arranged at one side on the copper basal plate and contacting with the copper basal plate by heat conducting silica gel, wherein the LED sheet comprises cooling plates of which the middle is hollow and the exterior margin is a polygon with anconcave arc, LED wafers arranged at the hollow part of cooling plates, high heat conducting silver pulp distributed among the LED wafers, the cooling plates and the copper basal plate, silica gel packaged above the copper basal plate for coating the LED wafers and the cooling plates. The utility model, adopting the technical project, solves the problem in the present high-power LED light source that a lighting lamp formed by assembling a plurality of single LEDs has lower light emitting brightness, so that the light by the lamp is non-uniform.

Description

A kind of high-power LED light source structure

Technical field

The utility model relates to the LED field, relates in particular to the high-power LED light source structure.

Background technology

LED is the abbreviation of English light Emitting Diode, and promptly light emitting diode is a kind of semiconductor solid luminescence device.Have luminous efficiency height, little power consumption, long service life, control circuit is simple, luminosity is high characteristics.But single led luminous power is low, can not be directly applied for high-power illumination, as street lamp, irradiation light field.Existing high-power LED lighting fixture is that many single LEDs are fitted together, and realizes that the panel of collective's light intensity stack is luminous.But, not high by the lighting luminosity of many single LEDs assemblings, cause lamp luminescence inhomogeneous easily, and easily because the not good lamp luminescence that causes of some LED putting positions is inhomogeneous and not attractive in appearance.On the other hand, many single LEDs assemblings are luminous, and heat is very big, and heat dissipation problem is difficult to solve.

The utility model content

At above-mentioned these problems, the utility model proposes a kind of high-power LED light source encapsulating structure and solve.

The technical solution of the utility model is:

High-power LED light source structure of the present utility model comprises:

One copper base comprises dielectric substrate layer and covers the copper foil layer on it and lay heat conducting nano coating on it;

Described copper base layer is provided with drive circuit;

Plural number LED sheet, matrix is arranged on the copper base;

One radiator is arranged at a side on the copper base, and contacts with the copper base layer by heat conductive silica gel.

Further, described LED sheet comprises:

Heat sink is a hollow out in the middle of it, and outer rim is the polygon of band imploded arcs;

The LED wafer is arranged at the hollow-out parts of copper base;

The heat conduction silver slurry layer is distributed between LED wafer, heat sink and the copper base;

Silica gel is packaged in the copper base top, coats LED wafer and heat sink.

Further, both sides are provided with screw on the described copper base.

Further, radiator is a fin slices radiator.

The utility model adopts as above technical scheme, and it is inhomogeneous and brightness is not high and the problem of poor heat radiation to have solved in the existing high-power LED lighting fixture lamp luminescence that many single LEDs are assembled into.

Description of drawings

Fig. 1 is a structural representation of the present utility model;

Fig. 2 is a LED chip architecture schematic diagram of the present utility model;

Fig. 3 is a LED chip architecture cutaway view of the present utility model;

Fig. 4 is a cooling plate structure schematic diagram of the present utility model.

The specific embodiment

Now with the specific embodiment the utility model is further specified in conjunction with the accompanying drawings.

Consult shown in Figure 1ly, high-power LED light source structure of the present utility model comprises: a copper base 1 comprises dielectric substrate layer 11 and covers the copper foil layer 12 on it and lay heat conducting nano coating on it; A plurality of LED sheets 2, matrix are arranged on the copper base 1, best, LED sheet 2 is square matrices and puts; One radiator 5 is arranged at a side on the copper base 1, and contacts with copper base 1 by heat conductive silica gel,, is used for heat and looses on copper base 1 by screw closure, best, radiator 5 is a fin slices radiator.Both sides are provided with screw 13 on the described copper base 1, are used to install and fix.

Consult Fig. 2, Fig. 3, shown in Figure 4, described LED sheet 2 comprises: heat sink 22 is a hollow out in the middle of it, and outer rim is the polygon of band imploded arcs; LED wafer 21 is arranged at the hollow-out parts of heat sink 22; Heat conduction silver slurry 3 is distributed between LED wafer 21, heat sink 22 and the copper base 1; Silica gel 4 is packaged in copper base 1 top, coats LED wafer 21 and heat sink 22.Be evenly distributed with fluorescent material 41 in the silica gel 4, fluorescent material adds the phosphor substance of heterogeneity according to luminous needs.

LED wafer 21 of the present utility model is selected U.S. high-quality section auspicious PN antarafacial power-type chip for use, by the brilliant low thermal resistance encapsulation technology of advanced gold-tin alloy eutectic solid welding, with the integrated led light source of making of a plurality of chips, and adopt high thermal conductivity coefficient and have the copper ceramic substrate 1 that covers of printed circuit to dispel the heat.

Although specifically show and introduced the utility model in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present utility model that do not break away from appended claims and limited; can make various variations to the utility model in the form and details, be protection domain of the present utility model.

Claims

1. a high-power LED light source structure is characterized in that: comprise

One copper base (1) comprises dielectric substrate layer (11) and covers the copper foil layer (12) on it and lay heat conducting nano coating on it;

Plural number LED sheet (2), matrix is arranged on the copper base (1);

One radiator (5) is arranged at the last side of copper base (1), and contacts with copper base (1) by heat conductive silica gel.

2. high-power LED light source structure according to claim 1 is characterized in that: described LED sheet (2) comprises

Heat sink (22) is a hollow out in the middle of it, and outer rim is the polygon of band imploded arcs;

LED wafer (21) is arranged at the hollow-out parts of heat sink (22);

Heat conduction silver slurry (3) is distributed between LED wafer (21), heat sink (22) and the copper base (1);

Silica gel (4) is packaged in copper base (1) top, coats LED wafer (21) and heat sink (22).

3. high-power LED light source structure according to claim 1 is characterized in that: described copper base (1) is gone up both sides and is provided with screw (13).

4. high-power LED light source structure according to claim 1 is characterized in that: radiator (5) is a fin slices radiator.