CN100392865C - 超薄soi纵向双极型晶体管及其制造方法 - Google Patents
超薄soi纵向双极型晶体管及其制造方法 Download PDFInfo
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- CN100392865C CN100392865C CNB2005100081955A CN200510008195A CN100392865C CN 100392865 C CN100392865 C CN 100392865C CN B2005100081955 A CNB2005100081955 A CN B2005100081955A CN 200510008195 A CN200510008195 A CN 200510008195A CN 100392865 C CN100392865 C CN 100392865C
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7317—Bipolar thin film transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Description
Claims (31)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/787,002 | 2004-02-25 | ||
US10/787,002 US7375410B2 (en) | 2004-02-25 | 2004-02-25 | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1661811A CN1661811A (zh) | 2005-08-31 |
CN100392865C true CN100392865C (zh) | 2008-06-04 |
Family
ID=34861895
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100081955A Active CN100392865C (zh) | 2004-02-25 | 2005-02-22 | 超薄soi纵向双极型晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (4) | US7375410B2 (zh) |
JP (1) | JP4448462B2 (zh) |
CN (1) | CN100392865C (zh) |
TW (1) | TWI342601B (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004106891A2 (en) | 2003-05-22 | 2004-12-09 | University Of Hawaii | Ultrasensitive biochemical sensor |
US7375410B2 (en) * | 2004-02-25 | 2008-05-20 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
US20050205891A1 (en) * | 2004-03-18 | 2005-09-22 | Holm-Kennedy James W | Distributed channel bipolar devices and architectures |
US7115965B2 (en) * | 2004-09-01 | 2006-10-03 | International Business Machines Corporation | Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation |
US7101763B1 (en) * | 2005-05-17 | 2006-09-05 | International Business Machines Corporation | Low capacitance junction-isolation for bulk FinFET technology |
US7709313B2 (en) * | 2005-07-19 | 2010-05-04 | International Business Machines Corporation | High performance capacitors in planar back gates CMOS |
US7439119B2 (en) * | 2006-02-24 | 2008-10-21 | Agere Systems Inc. | Thermally stable BiCMOS fabrication method and bipolar junction transistors formed according to the method |
US7375004B2 (en) * | 2006-03-10 | 2008-05-20 | Micron Technology, Inc. | Method of making an isolation trench and resulting isolation trench |
US7446007B2 (en) * | 2006-11-17 | 2008-11-04 | International Business Machines Corporation | Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof |
JP4786518B2 (ja) * | 2006-12-19 | 2011-10-05 | 株式会社東芝 | 半導体装置の製造方法 |
US8456393B2 (en) * | 2007-05-31 | 2013-06-04 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system |
CN101719503B (zh) * | 2009-11-10 | 2012-07-04 | 上海宏力半导体制造有限公司 | 一种共电极薄soi纵向双极型晶体管器件及其制造方法 |
US8791546B2 (en) | 2010-10-21 | 2014-07-29 | Freescale Semiconductor, Inc. | Bipolar transistors having emitter-base junctions of varying depths and/or doping concentrations |
US8603883B2 (en) * | 2011-11-16 | 2013-12-10 | International Business Machines Corporation | Interface control in a bipolar junction transistor |
US8927380B2 (en) | 2012-02-08 | 2015-01-06 | International Business Machines Corporation | SOI bipolar junction transistor with substrate bias voltages |
CN102592998B (zh) * | 2012-03-22 | 2014-10-15 | 中国科学院上海微系统与信息技术研究所 | 一种基于SOI的纵向SiGe双极晶体管及其制备方法 |
US20130277753A1 (en) * | 2012-04-20 | 2013-10-24 | International Business Machines Corporation | Bicmos devices on etsoi |
US9059245B2 (en) | 2012-05-30 | 2015-06-16 | International Business Machines Corporation | Semiconductor-on-insulator (SOI) substrates with ultra-thin SOI layers and buried oxides |
US9099489B2 (en) | 2012-07-10 | 2015-08-04 | Freescale Semiconductor Inc. | Bipolar transistor with high breakdown voltage |
US8847358B2 (en) | 2012-08-21 | 2014-09-30 | Freescale Semiconductor, Inc. | Bipolar transistor |
US9209095B2 (en) * | 2014-04-04 | 2015-12-08 | International Business Machines Corporation | III-V, Ge, or SiGe fin base lateral bipolar transistor structure and method |
CN104362175A (zh) * | 2014-11-20 | 2015-02-18 | 上海华虹宏力半导体制造有限公司 | 部分耗尽绝缘体上硅三极管结构 |
US10446644B2 (en) * | 2015-06-22 | 2019-10-15 | Globalfoundries Inc. | Device structures for a silicon-on-insulator substrate with a high-resistance handle wafer |
US9536788B1 (en) | 2015-10-19 | 2017-01-03 | International Business Machines Corporation | Complementary SOI lateral bipolar transistors with backplate bias |
US9991254B1 (en) | 2017-03-09 | 2018-06-05 | International Business Machines Corporation | Forming horizontal bipolar junction transistor compatible with nanosheets |
FR3087048B1 (fr) * | 2018-10-08 | 2021-11-12 | St Microelectronics Sa | Transistor bipolaire |
US11133397B2 (en) | 2019-06-04 | 2021-09-28 | Globalfoundries U.S. Inc. | Method for forming lateral heterojunction bipolar devices and the resulting devices |
US11552190B2 (en) | 2019-12-12 | 2023-01-10 | Analog Devices International Unlimited Company | High voltage double-diffused metal oxide semiconductor transistor with isolated parasitic bipolar junction transistor region |
US11152496B2 (en) | 2020-01-30 | 2021-10-19 | Globalfoundries U.S. Inc. | IC structure base and inner E/C material on raised insulator, and methods to form same |
US11837460B2 (en) | 2021-09-03 | 2023-12-05 | Globalfoundries U.S. Inc. | Lateral bipolar transistor |
CN116403902B (zh) * | 2023-06-08 | 2023-08-18 | 微龛(广州)半导体有限公司 | 一种垂直双极性结型晶体管及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05243255A (ja) * | 1992-02-28 | 1993-09-21 | Fujitsu Ltd | 半導体装置 |
US5352624A (en) * | 1992-01-23 | 1994-10-04 | Sony Corporation | SOI type semiconductor device and manufacturing method therefor |
CN1252168A (zh) * | 1997-04-04 | 2000-05-03 | 艾利森电话股份有限公司 | 双极型晶体管结构 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02327A (ja) | 1987-10-09 | 1990-01-05 | Fujitsu Ltd | 半導体装置 |
US4965872A (en) * | 1988-09-26 | 1990-10-23 | Vasudev Prahalad K | MOS-enhanced, self-aligned lateral bipolar transistor made of a semiconductor on an insulator |
US5621239A (en) * | 1990-11-05 | 1997-04-15 | Fujitsu Limited | SOI device having a buried layer of reduced resistivity |
JPH05243573A (ja) | 1992-03-03 | 1993-09-21 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US5448104A (en) * | 1993-07-17 | 1995-09-05 | Analog Devices, Inc. | Bipolar transistor with base charge controlled by back gate bias |
JPH0738005A (ja) | 1993-07-21 | 1995-02-07 | Sony Corp | 半導体装置およびその製造方法 |
DE4418206C2 (de) | 1994-05-25 | 1999-01-14 | Siemens Ag | CMOS-kompatibler Bipolartransistor und Herstellungsverfahren desselben |
US5583059A (en) | 1994-06-01 | 1996-12-10 | International Business Machines Corporation | Fabrication of vertical SiGe base HBT with lateral collector contact on thin SOI |
JPH0951101A (ja) | 1995-08-07 | 1997-02-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP4211084B2 (ja) | 1998-04-28 | 2009-01-21 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JP2979479B1 (ja) | 1998-06-12 | 1999-11-15 | 神奈川ポンプ株式会社 | 消防機材用動力車 |
JP2000242470A (ja) | 1999-02-23 | 2000-09-08 | Matsushita Electric Ind Co Ltd | 乱数生成装置および方法および記録媒体 |
JP2000340795A (ja) | 1999-05-26 | 2000-12-08 | Sony Corp | 半導体論理素子およびそれを用いた論理回路 |
JP2001110816A (ja) | 1999-07-19 | 2001-04-20 | Mitsubishi Heavy Ind Ltd | バイポーラトランジスタ |
JP2001203357A (ja) | 2000-01-17 | 2001-07-27 | Sony Corp | 半導体装置 |
US7439146B1 (en) | 2000-08-30 | 2008-10-21 | Agere Systems Inc. | Field plated resistor with enhanced routing area thereover |
US6784467B1 (en) | 2002-08-13 | 2004-08-31 | Newport Fab, Llc | Method for fabricating a self-aligned bipolar transistor and related structure |
JP2002258422A (ja) | 2000-12-27 | 2002-09-11 | Nikon Corp | 色分解光学装置および投射型表示装置 |
US6812533B2 (en) * | 2002-12-24 | 2004-11-02 | International Business Machines Corporation | SOI based bipolar transistor having a majority carrier accumulation layer as subcollector |
JP2005243255A (ja) | 2004-02-24 | 2005-09-08 | Matsushita Electric Works Ltd | 照明器具 |
US7375410B2 (en) * | 2004-02-25 | 2008-05-20 | International Business Machines Corporation | Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof |
US7115965B2 (en) * | 2004-09-01 | 2006-10-03 | International Business Machines Corporation | Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation |
-
2004
- 2004-02-25 US US10/787,002 patent/US7375410B2/en not_active Expired - Lifetime
-
2005
- 2005-02-04 TW TW094103527A patent/TWI342601B/zh active
- 2005-02-22 CN CNB2005100081955A patent/CN100392865C/zh active Active
- 2005-02-22 JP JP2005044980A patent/JP4448462B2/ja not_active Expired - Fee Related
-
2007
- 2007-10-23 US US11/877,305 patent/US20080132025A1/en not_active Abandoned
-
2008
- 2008-04-08 US US12/099,437 patent/US7763518B2/en not_active Expired - Fee Related
-
2010
- 2010-02-17 US US12/707,305 patent/US7911024B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5352624A (en) * | 1992-01-23 | 1994-10-04 | Sony Corporation | SOI type semiconductor device and manufacturing method therefor |
JPH05243255A (ja) * | 1992-02-28 | 1993-09-21 | Fujitsu Ltd | 半導体装置 |
CN1252168A (zh) * | 1997-04-04 | 2000-05-03 | 艾利森电话股份有限公司 | 双极型晶体管结构 |
Also Published As
Publication number | Publication date |
---|---|
US7375410B2 (en) | 2008-05-20 |
US7911024B2 (en) | 2011-03-22 |
US20080132025A1 (en) | 2008-06-05 |
US20080230869A1 (en) | 2008-09-25 |
US20050184360A1 (en) | 2005-08-25 |
TWI342601B (en) | 2011-05-21 |
TW200537651A (en) | 2005-11-16 |
JP2005244224A (ja) | 2005-09-08 |
JP4448462B2 (ja) | 2010-04-07 |
US7763518B2 (en) | 2010-07-27 |
US20100207683A1 (en) | 2010-08-19 |
CN1661811A (zh) | 2005-08-31 |
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Effective date of registration: 20171121 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171121 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |