CN100390999C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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- CN100390999C CN100390999C CNB038265931A CN03826593A CN100390999C CN 100390999 C CN100390999 C CN 100390999C CN B038265931 A CNB038265931 A CN B038265931A CN 03826593 A CN03826593 A CN 03826593A CN 100390999 C CN100390999 C CN 100390999C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 48
- 239000003990 capacitor Substances 0.000 claims abstract description 41
- 239000011229 interlayer Substances 0.000 claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 52
- 239000002305 electric material Substances 0.000 claims description 37
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 33
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000007785 strong electrolyte Substances 0.000 abstract 2
- 239000004744 fabric Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 66
- 230000004888 barrier function Effects 0.000 description 48
- 238000006243 chemical reaction Methods 0.000 description 21
- 239000010410 layer Substances 0.000 description 18
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- 239000000463 material Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
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- 229910000510 noble metal Inorganic materials 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
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- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
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- 229910052741 iridium Inorganic materials 0.000 description 2
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- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008246 gaseous mixture Substances 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/40—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76864—Thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
接触孔内 | 接触孔外 | |
第一实施方式 | 1 | 1.9 |
第二实施方式 | 1 | 1.8 |
第三实施方式 | 1 | 1.3 |
以往(参考例) | 1 | 2.5 |
Claims (13)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/011348 WO2005024950A1 (ja) | 2003-09-05 | 2003-09-05 | 半導体装置及びその製造方法 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810090099A Division CN100583436C (zh) | 2003-09-05 | 2003-09-05 | 半导体装置及其制造方法 |
CN200910169152A Division CN101661940A (zh) | 2003-09-05 | 2003-09-05 | 半导体装置及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1788350A CN1788350A (zh) | 2006-06-14 |
CN100390999C true CN100390999C (zh) | 2008-05-28 |
Family
ID=34260137
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038265931A Expired - Fee Related CN100390999C (zh) | 2003-09-05 | 2003-09-05 | 半导体装置及其制造方法 |
CN200810090099A Expired - Fee Related CN100583436C (zh) | 2003-09-05 | 2003-09-05 | 半导体装置及其制造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810090099A Expired - Fee Related CN100583436C (zh) | 2003-09-05 | 2003-09-05 | 半导体装置及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7498625B2 (zh) |
JP (1) | JP4500262B2 (zh) |
CN (2) | CN100390999C (zh) |
WO (1) | WO2005024950A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102176457B (zh) * | 2006-09-27 | 2016-01-13 | 富士通半导体股份有限公司 | 具有电容器的半导体器件及其制造方法 |
KR101184013B1 (ko) | 2006-09-27 | 2012-09-18 | 후지쯔 세미컨덕터 가부시키가이샤 | 커패시터를 갖는 반도체 장치 및 그 제조 방법 |
CN101803004B (zh) * | 2007-10-03 | 2012-10-10 | 富士通半导体股份有限公司 | 电容元件及半导体器件 |
JP2010040704A (ja) * | 2008-08-04 | 2010-02-18 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体装置 |
JP6227396B2 (ja) * | 2013-12-20 | 2017-11-08 | 株式会社ジャパンディスプレイ | 薄膜トランジスタ及びそれを用いた表示装置 |
KR102299988B1 (ko) * | 2018-01-16 | 2021-09-09 | 주식회사 엘지에너지솔루션 | 이차전지용 노칭장치 및 노칭방법 |
KR102306546B1 (ko) * | 2018-05-23 | 2021-09-30 | 주식회사 엘지에너지솔루션 | 이차전지용 노칭장치 및 노칭방법 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028137U (zh) * | 1988-06-28 | 1990-01-19 | ||
JPH0492428A (ja) * | 1990-08-08 | 1992-03-25 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
CN1128406A (zh) * | 1994-06-28 | 1996-08-07 | 松下电子工业株式会社 | 半导体器件及其制造方法 |
JPH10302481A (ja) * | 1997-04-24 | 1998-11-13 | Nec Corp | 強誘電体メモリ |
US6005291A (en) * | 1997-08-22 | 1999-12-21 | Nec Corporation | Semiconductor device and process for production thereof |
JP2002252336A (ja) * | 2001-02-26 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2003100994A (ja) * | 2001-09-27 | 2003-04-04 | Oki Electric Ind Co Ltd | 強誘電体メモリおよびその製造方法 |
JP2003133292A (ja) * | 2001-10-29 | 2003-05-09 | Applied Materials Inc | エッチング方法及びキャパシタ形成方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2654136B2 (ja) | 1988-03-02 | 1997-09-17 | 株式会社リコー | 記録紙供給装置 |
US5350705A (en) * | 1992-08-25 | 1994-09-27 | National Semiconductor Corporation | Ferroelectric memory cell arrangement having a split capacitor plate structure |
JPH08116030A (ja) * | 1994-10-12 | 1996-05-07 | Inter Nix Kk | 半導体集積回路装置 |
JP3113173B2 (ja) * | 1995-06-05 | 2000-11-27 | シャープ株式会社 | 不揮発性ランダムアクセスメモリ及びその製造方法 |
JPH09205181A (ja) * | 1996-01-26 | 1997-08-05 | Nec Corp | 半導体装置 |
TW409152B (en) * | 1996-06-13 | 2000-10-21 | Samsung Electronic | Etching gas composition for ferroelectric capacitor electrode film and method for etching a transition metal thin film |
JP3165093B2 (ja) | 1997-11-13 | 2001-05-14 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
US6046490A (en) * | 1998-08-10 | 2000-04-04 | Matsushita Electronics Corporation | Semiconductor device having a capacitor dielectric element and wiring layers |
TW434877B (en) * | 1998-12-03 | 2001-05-16 | Matsushita Electronics Corp | Semiconductor memory device and method for manufacturing the same |
US6316797B1 (en) * | 1999-02-19 | 2001-11-13 | Advanced Technology Materials, Inc. | Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material |
JP3180796B2 (ja) * | 1999-02-25 | 2001-06-25 | 日本電気株式会社 | 半導体装置の製造方法 |
JP4261031B2 (ja) * | 2000-06-15 | 2009-04-30 | Okiセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
JP2002100740A (ja) | 2000-09-21 | 2002-04-05 | Oki Electric Ind Co Ltd | 半導体記憶素子及びその製造方法 |
JP2003060054A (ja) * | 2001-08-10 | 2003-02-28 | Rohm Co Ltd | 強誘電体キャパシタを有する半導体装置 |
JP4323137B2 (ja) * | 2002-06-03 | 2009-09-02 | 新光電気工業株式会社 | 基板埋め込み用キャパシタ、基板埋め込み用キャパシタを埋め込んだ回路基板及び基板埋め込み用キャパシタの製造方法 |
-
2003
- 2003-09-05 CN CNB038265931A patent/CN100390999C/zh not_active Expired - Fee Related
- 2003-09-05 WO PCT/JP2003/011348 patent/WO2005024950A1/ja active Application Filing
- 2003-09-05 CN CN200810090099A patent/CN100583436C/zh not_active Expired - Fee Related
- 2003-09-05 JP JP2005508792A patent/JP4500262B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-15 US US11/300,272 patent/US7498625B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH028137U (zh) * | 1988-06-28 | 1990-01-19 | ||
JPH0492428A (ja) * | 1990-08-08 | 1992-03-25 | Texas Instr Japan Ltd | 半導体装置及びその製造方法 |
CN1128406A (zh) * | 1994-06-28 | 1996-08-07 | 松下电子工业株式会社 | 半导体器件及其制造方法 |
JPH10302481A (ja) * | 1997-04-24 | 1998-11-13 | Nec Corp | 強誘電体メモリ |
US6005291A (en) * | 1997-08-22 | 1999-12-21 | Nec Corporation | Semiconductor device and process for production thereof |
JP2002252336A (ja) * | 2001-02-26 | 2002-09-06 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2003100994A (ja) * | 2001-09-27 | 2003-04-04 | Oki Electric Ind Co Ltd | 強誘電体メモリおよびその製造方法 |
JP2003133292A (ja) * | 2001-10-29 | 2003-05-09 | Applied Materials Inc | エッチング方法及びキャパシタ形成方法 |
Also Published As
Publication number | Publication date |
---|---|
US20060091438A1 (en) | 2006-05-04 |
WO2005024950A1 (ja) | 2005-03-17 |
CN1788350A (zh) | 2006-06-14 |
CN101261988A (zh) | 2008-09-10 |
JPWO2005024950A1 (ja) | 2006-11-16 |
JP4500262B2 (ja) | 2010-07-14 |
US7498625B2 (en) | 2009-03-03 |
CN100583436C (zh) | 2010-01-20 |
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