CN100355058C - 具有连续沉积和蚀刻的电离pvd - Google Patents

具有连续沉积和蚀刻的电离pvd Download PDF

Info

Publication number
CN100355058C
CN100355058C CNB02812085XA CN02812085A CN100355058C CN 100355058 C CN100355058 C CN 100355058C CN B02812085X A CNB02812085X A CN B02812085XA CN 02812085 A CN02812085 A CN 02812085A CN 100355058 C CN100355058 C CN 100355058C
Authority
CN
China
Prior art keywords
substrate
deposition
mode
etching
etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB02812085XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1552097A (zh
Inventor
图鲁尔·雅萨尔
格林·雷诺兹
弗兰克·切里奥
布鲁斯·吉托曼
迈克尔·格拉佩豪斯
罗德尼·罗比森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1552097A publication Critical patent/CN1552097A/zh
Application granted granted Critical
Publication of CN100355058C publication Critical patent/CN100355058C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/358—Inductive energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76865—Selective removal of parts of the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CNB02812085XA 2001-05-04 2002-05-03 具有连续沉积和蚀刻的电离pvd Expired - Fee Related CN100355058C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60/288,952 1999-04-09
US28895201P 2001-05-04 2001-05-04

Publications (2)

Publication Number Publication Date
CN1552097A CN1552097A (zh) 2004-12-01
CN100355058C true CN100355058C (zh) 2007-12-12

Family

ID=23109372

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB02812085XA Expired - Fee Related CN100355058C (zh) 2001-05-04 2002-05-03 具有连续沉积和蚀刻的电离pvd

Country Status (7)

Country Link
US (1) US6755945B2 (enExample)
EP (1) EP1384257A2 (enExample)
JP (1) JP4429605B2 (enExample)
KR (1) KR100878103B1 (enExample)
CN (1) CN100355058C (enExample)
TW (1) TW552624B (enExample)
WO (1) WO2002091461A2 (enExample)

Families Citing this family (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
US10047430B2 (en) 1999-10-08 2018-08-14 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US8696875B2 (en) * 1999-10-08 2014-04-15 Applied Materials, Inc. Self-ionized and inductively-coupled plasma for sputtering and resputtering
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
ATE419550T1 (de) 2002-02-12 2009-01-15 Oc Oerlikon Balzers Ag Optisches bauteil mit submikrometer-hohlräumen
US7901545B2 (en) * 2004-03-26 2011-03-08 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US7504006B2 (en) * 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
US6987027B2 (en) 2002-08-23 2006-01-17 The Regents Of The University Of California Microscale vacuum tube device and method for making same
US7012266B2 (en) 2002-08-23 2006-03-14 Samsung Electronics Co., Ltd. MEMS-based two-dimensional e-beam nano lithography device and method for making the same
AU2003304297A1 (en) * 2002-08-23 2005-01-21 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US20040087163A1 (en) * 2002-10-30 2004-05-06 Robert Steimle Method for forming magnetic clad bit line
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US20040127014A1 (en) * 2002-12-30 2004-07-01 Cheng-Lin Huang Method of improving a barrier layer in a via or contact opening
US20040140196A1 (en) * 2003-01-17 2004-07-22 Applied Materials, Inc. Shaping features in sputter deposition
US6784105B1 (en) * 2003-04-09 2004-08-31 Infineon Technologies North America Corp. Simultaneous native oxide removal and metal neutral deposition method
US8298933B2 (en) * 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US20040211661A1 (en) * 2003-04-23 2004-10-28 Da Zhang Method for plasma deposition of a substrate barrier layer
US6929720B2 (en) * 2003-06-09 2005-08-16 Tokyo Electron Limited Sputtering source for ionized physical vapor deposition of metals
JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
SE527180C2 (sv) 2003-08-12 2006-01-17 Sandvik Intellectual Property Rakel- eller schaberblad med nötningsbeständigt skikt samt metod för tillverkning därav
US20050061251A1 (en) * 2003-09-02 2005-03-24 Ronghua Wei Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7892406B2 (en) * 2005-03-28 2011-02-22 Tokyo Electron Limited Ionized physical vapor deposition (iPVD) process
US20090321247A1 (en) * 2004-03-05 2009-12-31 Tokyo Electron Limited IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
US7700474B2 (en) * 2006-04-07 2010-04-20 Tokyo Electron Limited Barrier deposition using ionized physical vapor deposition (iPVD)
JP2005285820A (ja) * 2004-03-26 2005-10-13 Ulvac Japan Ltd バイアススパッタ成膜方法及び膜厚制御方法
DE102004015862B4 (de) 2004-03-31 2006-11-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer leitenden Barrierenschicht in kritischen Öffnungen mittels eines abschließenden Abscheideschritts nach einer Rück-Sputter-Abscheidung
US7071095B2 (en) * 2004-05-20 2006-07-04 Taiwan Semiconductor Manufacturing Company Barrier metal re-distribution process for resistivity reduction
US20050266173A1 (en) * 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US20050266679A1 (en) * 2004-05-26 2005-12-01 Jing-Cheng Lin Barrier structure for semiconductor devices
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US20050263891A1 (en) * 2004-05-28 2005-12-01 Bih-Huey Lee Diffusion barrier for damascene structures
US7556718B2 (en) 2004-06-22 2009-07-07 Tokyo Electron Limited Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer
JP2006093660A (ja) * 2004-08-23 2006-04-06 Konica Minolta Holdings Inc プラズマエッチング法
US20090053903A1 (en) * 2004-08-31 2009-02-26 Tokyo Electron Limited Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium
WO2006036846A1 (en) * 2004-09-24 2006-04-06 Zond, Inc. Apparatus for generating high-current electrical discharges
JP2006097071A (ja) * 2004-09-29 2006-04-13 Hiroshima Univ 時効性金属材料の硬質化処理方法、硬質化処理装置及び切削工具
DE102004047630A1 (de) * 2004-09-30 2006-04-13 Infineon Technologies Ag Verfahren zur Herstellung eines CBRAM-Halbleiterspeichers
US7268076B2 (en) * 2004-10-05 2007-09-11 Applied Materials, Inc. Apparatus and method for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7399943B2 (en) * 2004-10-05 2008-07-15 Applied Materials, Inc. Apparatus for metal plasma vapor deposition and re-sputter with source and bias power frequencies applied through the workpiece
US7214619B2 (en) * 2004-10-05 2007-05-08 Applied Materials, Inc. Method for forming a barrier layer in an integrated circuit in a plasma with source and bias power frequencies applied through the workpiece
JP2006148074A (ja) * 2004-10-19 2006-06-08 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
JP2006148075A (ja) * 2004-10-19 2006-06-08 Tokyo Electron Ltd 成膜方法及びプラズマ成膜装置
US20080200002A1 (en) * 2004-10-19 2008-08-21 Tokyo Electron Limited Plasma Sputtering Film Deposition Method and Equipment
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7205187B2 (en) * 2005-01-18 2007-04-17 Tokyo Electron Limited Micro-feature fill process and apparatus using hexachlorodisilane or other chlorine-containing silicon precursor
US7193327B2 (en) * 2005-01-25 2007-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier structure for semiconductor devices
US20060172536A1 (en) * 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
US20060278521A1 (en) * 2005-06-14 2006-12-14 Stowell Michael W System and method for controlling ion density and energy using modulated power signals
US20070029193A1 (en) * 2005-08-03 2007-02-08 Tokyo Electron Limited Segmented biased peripheral electrode in plasma processing method and apparatus
US20070068795A1 (en) * 2005-09-26 2007-03-29 Jozef Brcka Hollow body plasma uniformity adjustment device and method
US7700484B2 (en) * 2005-09-30 2010-04-20 Tokyo Electron Limited Method and apparatus for a metallic dry-filling process
DE102005046976B4 (de) 2005-09-30 2011-12-08 Advanced Micro Devices, Inc. Verfahren zur Herstellung einer Wolframverbindungsstruktur mit verbesserter Seitenwandbedeckung der Barrierenschicht
US7348266B2 (en) * 2005-09-30 2008-03-25 Tokyo Electron Limited Method and apparatus for a metallic dry-filling process
US20070074968A1 (en) * 2005-09-30 2007-04-05 Mirko Vukovic ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process
JP4967354B2 (ja) * 2006-01-31 2012-07-04 東京エレクトロン株式会社 シード膜の成膜方法、プラズマ成膜装置及び記憶媒体
JP5023505B2 (ja) * 2006-02-09 2012-09-12 東京エレクトロン株式会社 成膜方法、プラズマ成膜装置及び記憶媒体
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20070209930A1 (en) * 2006-03-09 2007-09-13 Applied Materials, Inc. Apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
JP4728153B2 (ja) * 2006-03-20 2011-07-20 富士通セミコンダクター株式会社 半導体装置の製造方法
US7618888B2 (en) * 2006-03-24 2009-11-17 Tokyo Electron Limited Temperature-controlled metallic dry-fill process
US7588667B2 (en) * 2006-04-07 2009-09-15 Tokyo Electron Limited Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
US20070257366A1 (en) * 2006-05-03 2007-11-08 Taiwan Semiconductor Manufacturing Company, Ltd. Barrier layer for semiconductor interconnect structure
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US20080029386A1 (en) * 2006-08-01 2008-02-07 Dorfman Benjamin F Method and apparatus for trans-zone sputtering
JP4690985B2 (ja) * 2006-09-25 2011-06-01 株式会社東芝 不揮発性記憶装置およびその製造方法
US7749398B2 (en) * 2006-09-29 2010-07-06 Tokyo Electron Limited Selective-redeposition sources for calibrating a plasma process
US7776748B2 (en) * 2006-09-29 2010-08-17 Tokyo Electron Limited Selective-redeposition structures for calibrating a plasma process
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US8791018B2 (en) * 2006-12-19 2014-07-29 Spansion Llc Method of depositing copper using physical vapor deposition
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US20080190760A1 (en) * 2007-02-08 2008-08-14 Applied Materials, Inc. Resputtered copper seed layer
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
DE102007025341B4 (de) * 2007-05-31 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren und Abscheidesystem mit Mehrschrittabscheidesteuerung
US20080311711A1 (en) * 2007-06-13 2008-12-18 Roland Hampp Gapfill for metal contacts
WO2009011801A1 (en) * 2007-07-13 2009-01-22 Sub-One Technology, Inc. Corrosion-resistant internal coating method using a germanium-containing precursor and hollow cathode techniques
JP5207406B2 (ja) * 2007-08-08 2013-06-12 株式会社アルバック プラズマ処理方法
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
WO2009053479A2 (en) * 2007-10-26 2009-04-30 Oc Oerlikon Balzers Ag Application of hipims to through silicon via metallization in three-dimensional wafer packaging
US8252690B2 (en) * 2008-02-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. In situ Cu seed layer formation for improving sidewall coverage
US20090242385A1 (en) * 2008-03-28 2009-10-01 Tokyo Electron Limited Method of depositing metal-containing films by inductively coupled physical vapor deposition
KR101959113B1 (ko) 2008-04-03 2019-03-15 에바텍 아크티엔게젤샤프트 금속 배선 구조 형성을 위한 스퍼터링 장치
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
WO2010004890A1 (ja) 2008-07-11 2010-01-14 キヤノンアネルバ株式会社 薄膜の成膜方法
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
CN102245798A (zh) * 2008-12-15 2011-11-16 株式会社爱发科 溅镀装置及溅镀方法
GB2469666B (en) * 2009-04-23 2012-01-11 Univ Sheffield Hallam RF-plasma glow discharge sputtering
US20110014778A1 (en) * 2009-07-20 2011-01-20 Klepper C Christopher Boron-10 coating process for neutron detector integrated circuit with high aspect ratio trenches
TWI435386B (zh) * 2009-07-21 2014-04-21 Ulvac Inc 被膜表面處理方法
US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US8846451B2 (en) 2010-07-30 2014-09-30 Applied Materials, Inc. Methods for depositing metal in high aspect ratio features
JP5392215B2 (ja) * 2010-09-28 2014-01-22 東京エレクトロン株式会社 成膜方法及び成膜装置
CN102036460B (zh) * 2010-12-10 2013-01-02 西安交通大学 平板式等离子体发生装置
TWI490051B (zh) * 2011-02-18 2015-07-01 Kim Mun Hwan 物理氣相沉積之反應室腔體零件之清潔方法
JP5719212B2 (ja) * 2011-03-30 2015-05-13 東京エレクトロン株式会社 成膜方法およびリスパッタ方法、ならびに成膜装置
US20140046475A1 (en) * 2012-08-09 2014-02-13 Applied Materials, Inc. Method and apparatus deposition process synchronization
KR101772309B1 (ko) 2013-06-04 2017-08-28 도쿄엘렉트론가부시키가이샤 자기 정렬 패터닝 에칭에서의 비대칭 프로파일의 완화
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
US9887072B2 (en) 2014-01-23 2018-02-06 Taiwan Semiconductor Manufacturing Company, Ltd. Systems and methods for integrated resputtering in a physical vapor deposition chamber
CN103993294B (zh) * 2014-04-17 2016-08-24 上海和辉光电有限公司 一种高温cvd工艺的压差改良方法
US10163698B2 (en) * 2014-05-07 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Interconnect structure and manufacturing method thereof
US9564359B2 (en) * 2014-07-17 2017-02-07 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive structure and method of forming the same
GB201420935D0 (en) * 2014-11-25 2015-01-07 Spts Technologies Ltd Plasma etching apparatus
US9576811B2 (en) * 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
US9806252B2 (en) 2015-04-20 2017-10-31 Lam Research Corporation Dry plasma etch method to pattern MRAM stack
US9870899B2 (en) 2015-04-24 2018-01-16 Lam Research Corporation Cobalt etch back
US9972504B2 (en) * 2015-08-07 2018-05-15 Lam Research Corporation Atomic layer etching of tungsten for enhanced tungsten deposition fill
US10096487B2 (en) 2015-08-19 2018-10-09 Lam Research Corporation Atomic layer etching of tungsten and other metals
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10229837B2 (en) 2016-02-04 2019-03-12 Lam Research Corporation Control of directionality in atomic layer etching
US10727073B2 (en) 2016-02-04 2020-07-28 Lam Research Corporation Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces
US9991128B2 (en) 2016-02-05 2018-06-05 Lam Research Corporation Atomic layer etching in continuous plasma
US9773643B1 (en) * 2016-06-30 2017-09-26 Lam Research Corporation Apparatus and method for deposition and etch in gap fill
US10566211B2 (en) 2016-08-30 2020-02-18 Lam Research Corporation Continuous and pulsed RF plasma for etching metals
US9905638B1 (en) * 2016-09-30 2018-02-27 Texas Instruments Incorporated Silicon epitaxy for high aspect ratio, substantially perpendicular deep silicon trench
US10818502B2 (en) 2016-11-21 2020-10-27 Tokyo Electron Limited System and method of plasma discharge ignition to reduce surface particles
US10566212B2 (en) 2016-12-19 2020-02-18 Lam Research Corporation Designer atomic layer etching
US10559461B2 (en) 2017-04-19 2020-02-11 Lam Research Corporation Selective deposition with atomic layer etch reset
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10763083B2 (en) 2017-10-06 2020-09-01 Lam Research Corporation High energy atomic layer etching
US11664206B2 (en) 2017-11-08 2023-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Arcing protection method and processing tool
KR102487054B1 (ko) * 2017-11-28 2023-01-13 삼성전자주식회사 식각 방법 및 반도체 장치의 제조 방법
CN111819303B (zh) * 2018-02-19 2023-12-08 应用材料公司 使用溅射蚀刻以中止厚膜中结晶发生的pvd二氧化钛形成
EP3776636B1 (en) 2018-03-30 2025-05-07 Lam Research Corporation Atomic layer etching and smoothing of refractory metals and other high surface binding energy materials
JP7203531B2 (ja) * 2018-08-08 2023-01-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US20200048760A1 (en) * 2018-08-13 2020-02-13 Applied Materials, Inc. High power impulse magnetron sputtering physical vapor deposition of tungsten films having improved bottom coverage
US10927450B2 (en) 2018-12-19 2021-02-23 Applied Materials, Inc. Methods and apparatus for patterning substrates using asymmetric physical vapor deposition
US12040181B2 (en) 2019-05-01 2024-07-16 Lam Research Corporation Modulated atomic layer deposition
US12431349B2 (en) 2019-06-07 2025-09-30 Lam Research Corporation In-situ control of film properties during atomic layer deposition
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN110190020A (zh) * 2019-07-03 2019-08-30 中国振华集团云科电子有限公司 一种刻蚀方法及系统
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US20210210355A1 (en) * 2020-01-08 2021-07-08 Tokyo Electron Limited Methods of Plasma Processing Using a Pulsed Electron Beam
US20210391176A1 (en) * 2020-06-16 2021-12-16 Applied Materials, Inc. Overhang reduction using pulsed bias
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
KR20210059676A (ko) * 2021-05-04 2021-05-25 삼성전자주식회사 반도체 장치 제조 방법
KR20240032126A (ko) 2021-07-09 2024-03-08 램 리써치 코포레이션 실리콘-함유 막들의 플라즈마 강화 원자 층 증착
US20230017383A1 (en) * 2021-07-14 2023-01-19 Applied Materials, Inc. Methods and apparatus for processing a substrate
US12476105B2 (en) 2023-01-10 2025-11-18 Applied Materials, Inc. Directional selective fill for silicon gap fill processes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000005745A1 (en) * 1998-07-20 2000-02-03 Tokyo Electron Arizona, Inc. Physical vapor processing of a surface with non-uniformity compensation
US6100200A (en) * 1998-12-21 2000-08-08 Advanced Technology Materials, Inc. Sputtering process for the conformal deposition of a metallization or insulating layer
US6106677A (en) * 1996-05-03 2000-08-22 Micron Technology, Inc. Method of creating low resistance contacts in high aspect ratio openings by resputtering
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US6287977B1 (en) * 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664935A (en) * 1985-09-24 1987-05-12 Machine Technology, Inc. Thin film deposition apparatus and method
JP2602276B2 (ja) * 1987-06-30 1997-04-23 株式会社日立製作所 スパツタリング方法とその装置
US5658438A (en) * 1995-12-19 1997-08-19 Micron Technology, Inc. Sputter deposition method for improved bottom and side wall coverage of high aspect ratio features
TW358964B (en) * 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5976327A (en) * 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6277249B1 (en) 2000-01-21 2001-08-21 Applied Materials Inc. Integrated process for copper via filling using a magnetron and target producing highly energetic ions

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6106677A (en) * 1996-05-03 2000-08-22 Micron Technology, Inc. Method of creating low resistance contacts in high aspect ratio openings by resputtering
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
WO2000005745A1 (en) * 1998-07-20 2000-02-03 Tokyo Electron Arizona, Inc. Physical vapor processing of a surface with non-uniformity compensation
US6287977B1 (en) * 1998-07-31 2001-09-11 Applied Materials, Inc. Method and apparatus for forming improved metal interconnects
US6100200A (en) * 1998-12-21 2000-08-08 Advanced Technology Materials, Inc. Sputtering process for the conformal deposition of a metallization or insulating layer

Also Published As

Publication number Publication date
CN1552097A (zh) 2004-12-01
WO2002091461A3 (en) 2003-02-27
JP4429605B2 (ja) 2010-03-10
US20030034244A1 (en) 2003-02-20
WO2002091461A2 (en) 2002-11-14
TW552624B (en) 2003-09-11
US6755945B2 (en) 2004-06-29
KR100878103B1 (ko) 2009-01-14
KR20030092126A (ko) 2003-12-03
JP2004526868A (ja) 2004-09-02
EP1384257A2 (en) 2004-01-28

Similar Documents

Publication Publication Date Title
CN100355058C (zh) 具有连续沉积和蚀刻的电离pvd
US6673716B1 (en) Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
JP2004526868A5 (enExample)
US7744735B2 (en) Ionized PVD with sequential deposition and etching
US6652718B1 (en) Use of RF biased ESC to influence the film properties of Ti and TiN
US8092658B2 (en) Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7700474B2 (en) Barrier deposition using ionized physical vapor deposition (iPVD)
US6562715B1 (en) Barrier layer structure for copper metallization and method of forming the structure
US7588667B2 (en) Depositing rhuthenium films using ionized physical vapor deposition (IPVD)
US7901545B2 (en) Ionized physical vapor deposition (iPVD) process
US20060172536A1 (en) Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
KR20010051943A (ko) 측벽 커버리지를 개선하기 위한ｉｍｐ 스퍼터링프로세스의 교대 방법
JP2001140065A (ja) 薄膜内粒子性能を改善したイオン化金属プラズマ銅蒸着
US6200433B1 (en) IMP technology with heavy gas sputtering
US20090321247A1 (en) IONIZED PHYSICAL VAPOR DEPOSITION (iPVD) PROCESS
US7892406B2 (en) Ionized physical vapor deposition (iPVD) process
US7642201B2 (en) Sequential tantalum-nitride deposition
US20250316452A1 (en) Delivery of pulsed voltage waveforms to improve step coverage and damage control
EP4174208A1 (en) Pvd method and apparatus

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071212

Termination date: 20150503

EXPY Termination of patent right or utility model