CN100340925C - 抗蚀图形形成方法、使用该法的微细图形形成方法 - Google Patents

抗蚀图形形成方法、使用该法的微细图形形成方法 Download PDF

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Publication number
CN100340925C
CN100340925C CNB2004101003126A CN200410100312A CN100340925C CN 100340925 C CN100340925 C CN 100340925C CN B2004101003126 A CNB2004101003126 A CN B2004101003126A CN 200410100312 A CN200410100312 A CN 200410100312A CN 100340925 C CN100340925 C CN 100340925C
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CN
China
Prior art keywords
mentioned
resist pattern
mask
film
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004101003126A
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English (en)
Chinese (zh)
Other versions
CN1629732A (zh
Inventor
森尾公隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Publication of CN1629732A publication Critical patent/CN1629732A/zh
Application granted granted Critical
Publication of CN100340925C publication Critical patent/CN100340925C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNB2004101003126A 2003-12-12 2004-12-09 抗蚀图形形成方法、使用该法的微细图形形成方法 Expired - Fee Related CN100340925C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003414768 2003-12-12
JP2003414768A JP4275519B2 (ja) 2003-12-12 2003-12-12 微細パターンの形成方法および液晶表示素子の製造方法

Publications (2)

Publication Number Publication Date
CN1629732A CN1629732A (zh) 2005-06-22
CN100340925C true CN100340925C (zh) 2007-10-03

Family

ID=34734474

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004101003126A Expired - Fee Related CN100340925C (zh) 2003-12-12 2004-12-09 抗蚀图形形成方法、使用该法的微细图形形成方法

Country Status (4)

Country Link
JP (1) JP4275519B2 (ja)
KR (1) KR100681750B1 (ja)
CN (1) CN100340925C (ja)
TW (1) TWI307457B (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4611690B2 (ja) * 2004-09-03 2011-01-12 東京応化工業株式会社 レジストパターンの形成方法ならびにこれを用いた微細パターンの形成方法および液晶表示素子の製造方法
KR101522240B1 (ko) * 2007-12-24 2015-05-22 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
KR101375855B1 (ko) 2008-11-27 2014-03-18 엘지디스플레이 주식회사 산화물 박막 트랜지스터의 제조방법
CN104253037A (zh) * 2013-06-30 2014-12-31 无锡华润上华半导体有限公司 一种改善刻蚀糊胶的方法
CN106505033B (zh) * 2016-11-16 2019-06-25 深圳市华星光电技术有限公司 阵列基板及其制备方法、显示装置
CN107195540B (zh) * 2017-06-05 2021-01-26 京东方科技集团股份有限公司 一种阵列基板的制作方法、阵列基板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545576A (en) * 1994-04-28 1996-08-13 Casio Computer Co., Ltd. Method for manufacturing a thin film transistor panel
TW465117B (en) * 2000-11-30 2001-11-21 Ind Tech Res Inst Manufacturing method of polysilicon thin film transistor containing lightly doped drain structure
US6479398B1 (en) * 2000-08-02 2002-11-12 Industrial Technology Research Institute Method of manufacturing an amorphous-silicon thin film transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100656899B1 (ko) * 1999-06-30 2006-12-15 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 및 그 정렬 키 구조
KR100601171B1 (ko) * 1999-07-08 2006-07-13 삼성전자주식회사 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545576A (en) * 1994-04-28 1996-08-13 Casio Computer Co., Ltd. Method for manufacturing a thin film transistor panel
US6479398B1 (en) * 2000-08-02 2002-11-12 Industrial Technology Research Institute Method of manufacturing an amorphous-silicon thin film transistor
TW465117B (en) * 2000-11-30 2001-11-21 Ind Tech Res Inst Manufacturing method of polysilicon thin film transistor containing lightly doped drain structure

Also Published As

Publication number Publication date
JP4275519B2 (ja) 2009-06-10
JP2005173341A (ja) 2005-06-30
KR100681750B1 (ko) 2007-02-15
TW200523678A (en) 2005-07-16
KR20050058956A (ko) 2005-06-17
CN1629732A (zh) 2005-06-22
TWI307457B (en) 2009-03-11

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Granted publication date: 20071003

Termination date: 20201209