CN1142463C - 分级酚醛清漆树脂共聚物的生产方法 - Google Patents
分级酚醛清漆树脂共聚物的生产方法 Download PDFInfo
- Publication number
- CN1142463C CN1142463C CNB988107414A CN98810741A CN1142463C CN 1142463 C CN1142463 C CN 1142463C CN B988107414 A CNB988107414 A CN B988107414A CN 98810741 A CN98810741 A CN 98810741A CN 1142463 C CN1142463 C CN 1142463C
- Authority
- CN
- China
- Prior art keywords
- novolac resin
- photoresist
- weight
- segmented copolymer
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
实施例序号 | 树脂 | GPC MW | PD | 溶解速率 |
2 | 母体树脂 | 2193 | 2.2 | |
2 | 分级树脂 | 3331 | 1.9 | 110 |
3 | 母体树脂 | 2769 | 2.9 | |
3 | 分级树脂 | 4154 | 2.2 | 67.0 |
4 | 母体树脂 | 3366 | 2.1 | |
4 | 分级树脂 | 5401 | 2.1 | 126.0 |
5 | 母体树脂 | 2516 | 3.6 | |
5 | 分级树脂 | 3979 | 1.8 | 132.6 |
6 | 母体树脂 | 2016 | 2.0 | |
6 | 分级树脂 | 3150 | 2.4 | 174.0 |
7 | 母体树脂 | 2918 | 2.4 | |
7 | 分级树脂 | 4590 | 1.9 | 71.8 |
实施例序号 | 树脂来源 | DTP | 分辨率(微米) | DOF(微米) |
8 | 实施例2 | 150 | 0.34 | -0.6/0.4 |
9 | 实施例3 | 180 | 0.32 | -0.8/0.2 |
10 | 实施例4 | 125 | 0.36 | -0.8/0.2 |
11 | 实施例5 | 115 | 0.34 | -0.8/0.2 |
12 | 实施例6 | 110 | 0.34 | -0.8/0.2 |
13 | 实施例7 | 165 | 0.34 | -0.6/0.4 |
对比例 | 对比例 | 275 | 0.32 | -0.6/0.4 |
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/939,451 US5928836A (en) | 1997-09-29 | 1997-09-29 | Fractionated novolak resin copolymer and photoresist composition therefrom |
US08/939,451 | 1997-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1278336A CN1278336A (zh) | 2000-12-27 |
CN1142463C true CN1142463C (zh) | 2004-03-17 |
Family
ID=25473210
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB988107414A Expired - Fee Related CN1142463C (zh) | 1997-09-29 | 1998-09-16 | 分级酚醛清漆树脂共聚物的生产方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US5928836A (zh) |
EP (1) | EP1023637B1 (zh) |
JP (1) | JP2001518553A (zh) |
KR (1) | KR20010030763A (zh) |
CN (1) | CN1142463C (zh) |
DE (1) | DE69817003T2 (zh) |
TW (1) | TW486606B (zh) |
WO (1) | WO1999017166A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050014086A1 (en) * | 2001-06-20 | 2005-01-20 | Eswaran Sambasivan Venkat | "High ortho" novolak copolymers and composition thereof |
CN1802603A (zh) * | 2003-07-17 | 2006-07-12 | 霍尼韦尔国际公司 | 用于高级微电子应用的平面化薄膜及其生产装置和方法 |
US7303994B2 (en) * | 2004-06-14 | 2007-12-04 | International Business Machines Corporation | Process for interfacial adhesion in laminate structures through patterned roughing of a surface |
EP1842864B1 (en) * | 2005-01-25 | 2013-07-24 | Hodogaya Chemical Co., Ltd. | Ketone-modified resorcinol-formalin resin |
KR101308431B1 (ko) * | 2006-04-26 | 2013-09-30 | 엘지디스플레이 주식회사 | 인쇄용 레지스트 및 이를 이용한 패턴형성방법 |
US7642333B2 (en) * | 2007-05-21 | 2010-01-05 | Georgia-Pacific Chemicals Llc | Anhydride and resorcinol latent catalyst system for improving cure characteristics of phenolic resins |
JP5825884B2 (ja) * | 2011-07-01 | 2015-12-02 | 旭化成イーマテリアルズ株式会社 | フェノール樹脂組成物、及び硬化レリーフパターンの製造方法 |
KR101769190B1 (ko) * | 2011-12-09 | 2017-08-17 | 아사히 가세이 이-매터리얼즈 가부시키가이샤 | 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 반도체 장치 및 표시체 장치 |
KR102235159B1 (ko) * | 2014-04-15 | 2021-04-05 | 롬엔드하스전자재료코리아유한회사 | 감광성 수지 조성물, 및 이를 이용한 절연막 및 전자소자 |
TW201806996A (zh) * | 2016-04-06 | 2018-03-01 | 迪愛生股份有限公司 | 酚醛清漆型樹脂及抗蝕劑材料 |
TW201806995A (zh) * | 2016-04-06 | 2018-03-01 | 迪愛生股份有限公司 | 酚醛清漆型樹脂之製造方法 |
JP6828279B2 (ja) * | 2016-06-13 | 2021-02-10 | Dic株式会社 | ノボラック型樹脂及びレジスト膜 |
JP7095405B2 (ja) * | 2018-05-25 | 2022-07-05 | 住友ベークライト株式会社 | 感光性樹脂組成物用のノボラック型フェノール樹脂 |
KR20230022064A (ko) * | 2021-08-06 | 2023-02-14 | 코오롱인더스트리 주식회사 | 알킬 페놀 수지의 제조 방법, 알킬 페놀 수지 및 이를 포함하는 고무 조성물 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4345054A (en) * | 1979-12-27 | 1982-08-17 | Mitsui Petrochemical Industries, Ltd. | High-molecular-weight novolak types substituted phenolic resins and process for preparation thereof |
JPS60260611A (ja) * | 1984-06-08 | 1985-12-23 | Mitsubishi Petrochem Co Ltd | 高分子量クレゾ−ルノボラツク樹脂の製造方法 |
EP0251187A3 (en) * | 1986-06-27 | 1988-03-30 | Nippon Zeon Co., Ltd. | Method for purifying novolak resins useful as material for coating on a semiconductor substrate |
US5238776A (en) * | 1986-12-23 | 1993-08-24 | Shipley Company Inc. | Photoresist composition containing block copolymer resin and positive-working o-quinone diazide or negative-working azide sensitizer compound |
US5266440A (en) * | 1986-12-23 | 1993-11-30 | Shipley Company Inc. | Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons |
US5130410A (en) * | 1986-12-23 | 1992-07-14 | Shipley Company Inc. | Alternating and block copolymer resins |
JP2711590B2 (ja) * | 1990-09-13 | 1998-02-10 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
US5346799A (en) * | 1991-12-23 | 1994-09-13 | Ocg Microelectronic Materials, Inc. | Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde |
US5476750A (en) * | 1992-12-29 | 1995-12-19 | Hoechst Celanese Corporation | Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists |
US5750632A (en) * | 1994-12-30 | 1998-05-12 | Clariant Finance (Bvi) Limited | Isolation of novolak resin by low temperature sub surface forced steam distillation |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
-
1997
- 1997-09-29 US US08/939,451 patent/US5928836A/en not_active Expired - Fee Related
-
1998
- 1998-09-16 KR KR1020007003321A patent/KR20010030763A/ko not_active Application Discontinuation
- 1998-09-16 WO PCT/EP1998/005878 patent/WO1999017166A1/en not_active Application Discontinuation
- 1998-09-16 CN CNB988107414A patent/CN1142463C/zh not_active Expired - Fee Related
- 1998-09-16 DE DE69817003T patent/DE69817003T2/de not_active Expired - Fee Related
- 1998-09-16 JP JP2000514171A patent/JP2001518553A/ja active Pending
- 1998-09-16 EP EP98948978A patent/EP1023637B1/en not_active Expired - Lifetime
- 1998-09-23 TW TW087115826A patent/TW486606B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TW486606B (en) | 2002-05-11 |
JP2001518553A (ja) | 2001-10-16 |
DE69817003D1 (de) | 2003-09-11 |
KR20010030763A (ko) | 2001-04-16 |
US5928836A (en) | 1999-07-27 |
WO1999017166A1 (en) | 1999-04-08 |
CN1278336A (zh) | 2000-12-27 |
EP1023637B1 (en) | 2003-08-06 |
EP1023637A1 (en) | 2000-08-02 |
DE69817003T2 (de) | 2004-06-09 |
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