CN1330778A - 用新型抽提技术制备分级酚醛清漆树脂 - Google Patents
用新型抽提技术制备分级酚醛清漆树脂 Download PDFInfo
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- CN1330778A CN1330778A CN99813189A CN99813189A CN1330778A CN 1330778 A CN1330778 A CN 1330778A CN 99813189 A CN99813189 A CN 99813189A CN 99813189 A CN99813189 A CN 99813189A CN 1330778 A CN1330778 A CN 1330778A
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- 239000002736 nonionic surfactant Substances 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- OXNIZHLAWKMVMX-UHFFFAOYSA-N picric acid Chemical compound OC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O OXNIZHLAWKMVMX-UHFFFAOYSA-N 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- ILVGAIQLOCKNQA-YFKPBYRVSA-N propyl (2s)-2-hydroxypropanoate Chemical compound CCCOC(=O)[C@H](C)O ILVGAIQLOCKNQA-YFKPBYRVSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001577 simple distillation Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- LLWJPGAKXJBKKA-UHFFFAOYSA-N victoria blue B Chemical compound [Cl-].C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)=C(C=C1)C2=CC=CC=C2C1=[NH+]C1=CC=CC=C1 LLWJPGAKXJBKKA-UHFFFAOYSA-N 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- 239000003021 water soluble solvent Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 150000003739 xylenols Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Phenolic Resins Or Amino Resins (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
实验 | 温度℃ | rpm | R/H | Mw,GPC | PD,Mw/Mn | DR,/sec |
1 | 55 | 1000 | 2 | 9917 | 5.1 | —— |
2 | 0 | 5000 | 1 | 9941 | 5.4 | —— |
3 | 0 | 1000 | 2 | 9046 | 5.1 | —— |
4 | 55 | 1000 | 0.5 | 11710 | 5.0 | 69.5 |
5 | 55 | 5000 | 2 | 9601 | 5.0 | —— |
6 | 25 | 3500 | 2 | 9536 | 5.1 | —— |
7 | 25 | 1000 | 1 | 10069 | 5.0 | —— |
8 | 55 | 3500 | 1 | 10002 | 5.0 | —— |
9 | 0 | 1000 | 0.5 | 8788 | 5.3 | —— |
10 | 25 | 5000 | 0.5 | 9846 | 5.1 | —— |
11 | 25 | 5000 | 2 | 10274 | 5.3 | —— |
12 | 0 | 3500 | 2 | 10115 | 5.8 | —— |
13 | 0 | 3500 | 0.5 | 9513 | 5.4 | —— |
14 | 55 | 5000 | 1 | 12544 | 6.0 | 95.3 |
15 | 0 | 1000 | 1 | 9803 | 5.4 | —— |
实验 | 温度,℃ | R/H | Mw,GPC | PD | DR./sec |
1 | 55 | 2 | 11247 | 8.8 | 137.9 |
2 | 40 | 2 | 11481 | 9.2 | 146.3 |
3 | 35 | 0.5 | 10169 | 8.6 | 145.6 |
4 | 25 | 0.5 | 11368 | 9.5 | 187.3 |
5 | 40 | 2 | 11728 | 9.3 | 149.6 |
6 | 25 | 2 | 11857 | 9.6 | 176.5 |
7 | 55 | 2 | 11340 | 4.3 | 140 |
8 | 25 | 2 | 11674 | 9.4 | 186.7 |
9 | 55 | 0.5 | 14155 | 8.1 | 40.6 |
10 | 55 | 1 | 12659 | 9.7 | 159.2 |
11 | 25 | 1.25 | 11980 | 9.6 | 189.9 |
12 | 25 | 1.25 | 11183 | 9.1 | 191.2 |
13 | 55 | 1.5 | 12032 | 9.3 | 113.4 |
14 | 35 | 1.5 | 11688 | 9.4 | 143.4 |
15 | 45 | 0.5 | 10999 | 9.0 | 127.4 |
16 | 55 | 0.5 | 13862 | 6.8 | 28.5 |
Claims (33)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US19076398A | 1998-11-12 | 1998-11-12 | |
US09/190,763 | 1998-11-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1330778A true CN1330778A (zh) | 2002-01-09 |
Family
ID=22702665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN99813189A Pending CN1330778A (zh) | 1998-11-12 | 1999-11-03 | 用新型抽提技术制备分级酚醛清漆树脂 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6121412A (zh) |
EP (1) | EP1133715A2 (zh) |
JP (1) | JP2003529621A (zh) |
KR (1) | KR20010089450A (zh) |
CN (1) | CN1330778A (zh) |
HK (1) | HK1043407A1 (zh) |
MY (1) | MY130862A (zh) |
TW (1) | TWI223129B (zh) |
WO (1) | WO2000033137A2 (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297352B1 (en) * | 1998-11-12 | 2001-10-02 | Clariant Finance (Bvi) Limited | Method of reducing metal ion content of film-forming resins using a liquid/liquid centrifuge |
EP1122607A1 (en) * | 2000-02-07 | 2001-08-08 | Shipley Company LLC | High resolution photoresist compositions |
US6512087B1 (en) * | 2000-10-13 | 2003-01-28 | Clariant Finance (Bvi) Limited | Fractionation of resins using a static mixer and a liquid-liquid centrifuge |
CN1205241C (zh) * | 2000-10-13 | 2005-06-08 | 科莱恩金融(Bvi)有限公司 | 使用静态混合器和液-液离心机的树脂分级 |
US6936680B2 (en) * | 2000-12-12 | 2005-08-30 | Chang Chun Plastics Co., Ltd. | Method of producing novolak resin |
KR100846085B1 (ko) * | 2001-10-31 | 2008-07-14 | 주식회사 동진쎄미켐 | 액정표시장치 회로용 포토레지스트 조성물 |
US20040206702A1 (en) * | 2002-08-08 | 2004-10-21 | Davidson James M. | Use of an oxidizer to improve trace metals removal from photoresist and photoresist components |
JP4727958B2 (ja) * | 2004-08-19 | 2011-07-20 | 旭有機材工業株式会社 | ノボラック型フェノール樹脂の製造方法 |
JP4984067B2 (ja) * | 2007-07-23 | 2012-07-25 | 信越化学工業株式会社 | フォトレジスト組成物用高分子化合物の合成方法 |
EP3938420B1 (en) | 2019-03-11 | 2023-06-07 | Von Roll Schweiz AG | Curable epoxy composition and its use in prepregs and core filling |
US11248089B2 (en) | 2019-04-10 | 2022-02-15 | The Boeing Company | Polyanilines and methods thereof |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5371169A (en) * | 1992-09-28 | 1994-12-06 | Hoechst Celanese Corporation | Novolak resin mixtures |
US5374693A (en) * | 1992-12-29 | 1994-12-20 | Hoechst Celanese Corporation | Novolak resin blends for photoresist applications |
US5750632A (en) * | 1994-12-30 | 1998-05-12 | Clariant Finance (Bvi) Limited | Isolation of novolak resin by low temperature sub surface forced steam distillation |
US5521052A (en) * | 1994-12-30 | 1996-05-28 | Hoechst Celanese Corporation | Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom |
US5693749A (en) * | 1995-09-20 | 1997-12-02 | Hoechst Celanese Corporation | Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom |
US5739265A (en) * | 1995-09-20 | 1998-04-14 | Clariant Finance (Bvi) Ltd. | Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom |
US5665517A (en) * | 1996-01-11 | 1997-09-09 | Hoechst Celanese Corporation | Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom |
US5853954A (en) * | 1996-12-18 | 1998-12-29 | Clariant Finance (Bvi) Limited | Fractionated novolak resin and photoresist composition therefrom |
TW475099B (en) * | 1996-12-18 | 2002-02-01 | Hoechst Celanese Corp | Isolation of novolak resin without high temperature distillation and photoresist composition therefrom |
US5910559A (en) * | 1996-12-18 | 1999-06-08 | Clariant Finance (Bvi) Limited | Fractionated novolak resin from cresol-formaldehyde reaction mixture and photoresist composition therefrom |
-
1999
- 1999-10-14 US US09/418,239 patent/US6121412A/en not_active Expired - Fee Related
- 1999-10-18 TW TW088117978A patent/TWI223129B/zh active
- 1999-11-03 WO PCT/EP1999/008391 patent/WO2000033137A2/en not_active Application Discontinuation
- 1999-11-03 KR KR1020017006037A patent/KR20010089450A/ko not_active Application Discontinuation
- 1999-11-03 EP EP99970846A patent/EP1133715A2/en not_active Withdrawn
- 1999-11-03 CN CN99813189A patent/CN1330778A/zh active Pending
- 1999-11-03 JP JP2000585716A patent/JP2003529621A/ja not_active Withdrawn
- 1999-11-09 MY MYPI99004871A patent/MY130862A/en unknown
-
2002
- 2002-07-02 HK HK02104925.0A patent/HK1043407A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2000033137A2 (en) | 2000-06-08 |
JP2003529621A (ja) | 2003-10-07 |
MY130862A (en) | 2007-07-31 |
EP1133715A2 (en) | 2001-09-19 |
US6121412A (en) | 2000-09-19 |
WO2000033137A3 (en) | 2000-10-26 |
TWI223129B (en) | 2004-11-01 |
KR20010089450A (ko) | 2001-10-06 |
HK1043407A1 (zh) | 2002-09-13 |
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