TW200523678A - Resist pattern formation method, fine pattern formation method using the same, and liquid crystal element fabrication method - Google Patents

Abstract

A resist pattern formation method characterized in comprising: (A) a step in which a photoresist film is formed on a substrate 10; (B) a step in which the photoresist film is patterned into a pattern form having a thick portion r1 and a thin portion r2 after passing through a photolithography step that includes selective exposure to light; and (C) a step in which, after carrying out the patterning, a UV curing process is carried out to form a step resist pattern R having a thick portion r1 and a thin portion r2.

Description

200523678 九 IX. Description of the invention [Technical field to which the invention belongs] The present invention relates to a method for forming a photoresist pattern, a method for forming a fine pattern using the same, and a method for manufacturing a liquid crystal display element. [Prior art] The manufacture of liquid crystal array substrates for liquid crystal display devices is a photolithography process using a photoresist film. Figure 2 to Figure 15 to Table 15 'are examples of steps in which a Si (amorphous silicon dioxide) shape TFT array substrate having the structure shown in Figure 16 is not manufactured. In this example, first, as shown in FIG. 2, a gate electrode layer 2 'is formed on a glass substrate 1. Next, a step of forming a photoresist film on the gate electrode layer 2 ′, and selectively exposing the photoresist film through a photomask, and patterning the photolithography is shown in FIG. 3. Photoresist pattern R 1 is formed (1st photolithography step). # Next, using the obtained photoresist pattern R1 as a photomask to etch the gate electrode layer 2 ′, the photoresist pattern R1 can be removed to form the gate electrode 2 shown in FIG. 4. Next, as shown in FIG. 5, a first insulating film 3 may be formed on the glass substrate 1 formed by the gate electrode 2, and a first α-S i layer 4 ′ and a f-cut stop may be sequentially formed thereon. (Stopper) film 5. The step of forming a photoresist film on the etch stop film 5 'and allowing the photoresist film to be selectively exposed through a photomask is given by photolithography 200523678 (2) Patterned as described in Section 6 As shown in the figure, a photoresist pattern r2 is formed (second photolithography step). Next, using the obtained photoresist pattern R2 as a mask to etch the etching stopper film 5 'and the Ία-Si layer 4', the photoresist pattern r2 can be removed to form a blanket as shown in FIG. 7. The laminated body of the patterned first a_Si layer 4 and the etch stop film 5. On this, as shown in FIG. 8, the 2a_si layer 6 and the source / drain formation metal film 7 'can be sequentially formed. Next, a step including forming a photoresist film on the metal film 7 ', and selectively exposing the photoresist film through a photomask, and patterning the photolithography to form a photoimage 9 Photoresist pattern R 3 shown (3rd photolithography step). After that, the photoresist pattern R3 is used as a mask to etch the metal film V and the second cx-Si layer 6f, and then the photoresist pattern R3 is removed. As shown in FIG. 10, the stop film is etched. 5, a patterned second a-Si layer 6 and a source electrode and a drain electrode 7 may be formed. Next, as shown in FIG. 11, a second insulating film 8 ′ is formed on the glass substrate 1. Next, a step of forming a photoresist film on the second insulating film 8 ′, and selectively exposing the photoresist film through a photomask, and patterning the photolithography is shown in FIG. 12 The photoresist pattern R4 can be formed (4th photolithography step). Thereafter, the obtained photoresist pattern R4 is used as a mask to etch the second insulating film 8 ′, and then the photoresist pattern R4 is removed. As shown in FIG. 13, it is patterned into 200523678 (3) pattern to have The second insulating film 8 in the shape of a contact hole. Next, as shown in Fig. 14, a transparent conductive film 9 'is formed on the glass substrate 1. Next, a step of selectively forming a photoresist film on the transparent conductive film V so that the photoresist film is transmitted through a photomask is patterned by photolithography, as shown in FIG. 15 To form a photoresist pattern R 5 (5th photolithography step). Thereafter, by using the obtained photoresist pattern R5 as a photomask to etch the transparent conductive film 9 ', the photoresist pattern R5 is removed, and as shown in FIG. 16, a patterned transparent conductive film can be formed. 9, while obtaining a liquid crystal array substrate. In the method for manufacturing a liquid crystal array substrate after this step, a photolithography step using a photomask for selective exposure is performed a total of 5 times (1st to 5th photolithography steps). However, in recent years, reduction in the price of liquid crystal display elements has been strongly expected, and therefore simplification of manufacturing steps, and suppression of consumption of photoresist and the like have been demanded. Therefore, in response to these expectations, the use of segmented photoresist patterns with different thicknesses can make it known to use two steps of photolithography steps and one step of photolithography steps. A workable approach is proposed. In this method, after the segmented photoresist pattern is etched, the planar shape of the segmented photoresist pattern can be deformed without using the photolithography step by using the difference in thickness. Or, it is used as a photomask again for etching. 200523678 (4) [Summary of the invention] [Inventive problem to be solved] According to the above method, theoretically, the number of steps of photolithography can be reduced. Therefore, the consumption of photoresist can be suppressed, and the steps can be simplified. On the other hand, it can be expected to be effective in the manufacture of inexpensive liquid crystal display elements. However, "the conventional liquid crystal display element is manufactured as an appropriate photoresist material." In order to form such a segmented photoresist pattern, etching resistance or heat resistance are insufficient, and it is difficult to realize this method. Specifically, as described above, since the segmented photoresist pattern is used as a mask for etching before and after deformation, a high degree of etching resistance is necessary, and it is necessary to form such a segmented pattern having high etching resistance. The photoresist pattern is difficult. In addition, the photoresist pattern used in the manufacture of liquid crystal display elements may be subjected to post-baking treatment to improve heat resistance in order to be resistant to etching treatment or implantation treatment, but It is a suitable photoresist material in the manufacture of conventional liquid crystal display elements. On the opposite side of cheap and high sensitivity, the heat resistance tends to deteriorate, and the post-baking process will cause the segmented photoresist pattern to flow, which must be maintained. Shapes of different thicknesses are difficult. The present invention has been made in view of the foregoing circumstances, and an object thereof is to provide a method for forming a photoresist pattern having excellent etching resistance and heat resistance and capable of forming a segmented photoresist pattern. Another object of the present invention is to provide a method for forming a fine pattern using the method for forming a photoresist pattern according to the present invention, and a method for manufacturing the liquid crystal display element. _7_ 200523678 (5) [Means to solve the problem] In order to achieve the above-mentioned object, the method for forming a photoresist pattern of the present invention includes (A) a step of forming a photoresist film on a substrate, and (B) a process including selective exposure The photolithography step is a step of patterning the aforementioned photoresist film into a pattern shape having a thick wall portion and a thin wall portion, and (C) performing the aforementioned patterning, and then performing UV curing treatment to form A step of a stepped photoresist pattern having a thick wall portion and a thin wall portion. In the method for forming a fine pattern of the present invention, (D) After performing the aforementioned DV curing treatment, it is preferable to further include a step of performing a post-baking treatment. In the method for forming a fine pattern of the present invention, as the substrate, a gate electrode, a first insulating film, a first amorphous silicon dioxide film, an etching stopper film, and a second amorphous silicon dioxide film are formed on a glass substrate. It is preferable that the metal film for forming the source and drain electrodes has a multilayer structure laminated in order from the glass substrate side. In the method for forming a fine pattern of the present invention, after forming the aforementioned segmented photoresist pattern, further, (E) performing an etching treatment on the aforementioned substrate using the segmented photoresist pattern as a photomask, and thereafter (F) performing ashing treatment on the segmented photoresist pattern to remove the thin-walled portion, (G) etching the thick-walled portion of the substrate after removing the thin-walled portion After the treatment, (ii) the step of removing the thick-walled portion of the aforementioned segmented photoresist pattern is preferable. Alternatively, the method for forming the fine pattern of the present invention is to form the photoresist pattern of the present invention using a substrate having the aforementioned multilayer structure. -8- 200523678 The figure illustrates the use of the aforementioned method of inventing the device using the second plate element of gold. After the segmented photoresist pattern is described on the photolithography, it further has (E ') the aforementioned segmented light pattern as The metal film for forming the source and drain electrodes of the photomask, the second sand oxide film, the melting stop film, and the first amorphous silicon film are etched. Thereafter, (F) The segmented light type is subjected to ashing treatment to remove the thin-walled portion. (G ') After removing the front wall portion, the thick-walled portion is used as the source-drain electrode-shaped metal 腠 of the photomask and the second amorphous shape. The sand dioxide film is subjected to ageing treatment to expose the etching stopper film layer, and then (ii) a step of removing the thick-walled portion of the aforementioned segmented photoresist pattern is preferable. In the method for forming a fine pattern of the present invention, the etching process of the source-drain electrode forming metal film is a wet etching process or a dry etching process, and the aforementioned etching process of the amorphous silicon dioxide film is preferably a dry etching process. The method for manufacturing a liquid crystal display element of the present invention is a method for manufacturing a liquid crystal display having a step of forming a pixel pattern on a glass substrate to manufacture a liquid crystal array substrate. The method is to make a part of the aforementioned pixel pattern from the micrograph. Forming method to form. Or 'The manufacturing method of the liquid crystal display element of the present invention is to form a fine pattern by forming the fine pattern of the present invention having a substrate having a multilayer structure, and then: (1) in the fine pattern The step of forming the second insulating film, (j) a step of patterning the second insulating film by light microscopy, and (κ) a step of forming the second insulating film patterned into a transparent conductive film by ( L) The step of patterning the transparent conductive film by photometry is preferred. -9- 200523678 (7) [Effects of the invention] According to the method for forming a photoresist pattern of the present invention, after curing the photoresist film pattern, UV curing is performed to form an etching resistance. The heat resistance is good and the shape is stable. Segmented photoresistance pattern with excellent performance. In the manufacture of liquid crystal display elements, the amount of photoresist consumption is significantly larger than that of semiconductor manufacturing processes, and productivity improvement is necessary to make a large-scale substrate with good production efficiency. It is known that in this application, for example, a photoresist material without fractional distillation and a low molecular weight resin can be used. Although a low-cost and high-sensitivity photoresist material can be used, the heat resistance tends to deteriorate, so it will cause post-baking treatment. The resulting segmented photoresist pattern causes flow, making it difficult to maintain the thickness in different shapes. According to the present invention, even if such a low-cost and high-sensitivity photoresist material is used, it is possible to form a segmented photoresist pattern with good etching resistance and good heat resistance. According to the method for forming a fine pattern of the present invention, since the segmented photoresist pattern is excellent in etching resistance, the segmented photoresist pattern is etched as a mask base, and then the segmented photoresist pattern is formed. The thin-walled part is removed by ashing and used again as a photomask to etch the substrate. Therefore, the number of photolithography steps using the photomask to pattern the photoresist film can be reduced. Therefore, the consumption of photoresist can be suppressed, and the cost of a relatively expensive mask can be reduced, thereby simplifying the steps. According to the method for manufacturing a liquid crystal display element of the present invention, the number of steps of photolithography can be reduced in the step of forming a pixel pattern on a glass substrate to manufacture a liquid crystal array substrate, thereby realizing the consumption of photoresist The suppression of 'reduction using a mask. The manufacturing steps can also be simplified, so it is effective in manufacturing low-cost -10- 200523678 (8) LCD devices. [The best form for implementing the invention] <Photoresist composition> The photoresist composition used for the formation of the photoresist film is not particularly limited, and it can be used as a photoresist material for the manufacture of liquid crystal display elements. For example, (A) contains 100 to 50 parts by mass of the alkali-soluble resin, and (B) contains 5 to 25 parts by mass of the phenol compound represented by the following general formula (I), based on the total of the components (A) and (B). 100 parts by mass, containing (C) selected from the group consisting of benzoquinonediazide ester (photosensitive component 1) represented by the following general formula (III) and benzoquinonediazide represented by the following general formula (V) At least one of the esterified product (photosensitive component 2) is in a range of 15 to 40 parts by mass, and (D) a positive-type photoresist composition containing an organic solvent can be suitably used.

[In the formula, R1 to R8 are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a ring group having 3 to 6 carbon atoms; {^] Is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and R9 may be a hydrogen atom and an alkyl group having 1 to 6 carbon atoms. At this time, Q is a hydrogen atom and a carbon atom number. Alkyl group of 1 to 6 or the following -11-200523678 (9) Formula (Π)

R 12 13 (Π)

(In the formula, R12 and R13 are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or an alkyl group having 3 to 6 carbon atoms; c represents an integer of 1 to 3.) Residue 'or Q may be bonded to the terminal of R9. At this time, Q represents a carbon atom between R9 and Q and R9, and also represents a carbon chain of 3 to 6 A, b represents an integer of 1 to 3; d represents an integer of 0 to 3; a '^ or d is 3' each is not R3, R6 or R8; n represents an integer of 0 to 3. A

4 [In the formula, R] to R8 represent each independent hydrogen atom, halogen atom, and number of carbon atoms] A radical of 6 to 6, an oxygen radical of 1 to 6 carbon atoms, or a cycloalkane of 3 to 6 carbon atoms R1G, R &quot; each independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; R9 may be a hydrogen atom, a fluorenyl group having 1 to 6 carbon atoms, at this time, Q is a hydrogen atom and carbon number Alkyl group of 1 to 6 or the following chemical formula (IV) &gt; 12-200523678 (10)

αν) In the formula, R12 and R13 each independently represent a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a cycloalkyl group having 3 to 6 carbon atoms. ; C represents an integer of 1 to 3. ), Or, Q may be bonded to the end of r9. At this time, Q is a carbon atom between r9 and 'Q and r9, and simultaneously represents a ring of carbon chain 3 to 6; D means' independent hydrogen atom, Or at least one of 1,2-naphthoquinonediazide-5-sulfonyl 'D represents 1,2-naphthoate diazide expansion group; a' b represents an integer of 1 to 3, and d represents 0 The number of 黟 ~ j; when a, b or d is 3, 'each is not R3' R6 or R8; η means 0 ~

(V) (In the formula, D represents an independent hydrogen atom, or 1,2-naphthoquinonediazide-5_sulfonyl, and at least one of D is 1,2-naphthoquinonediazide-5-sulfonyl. About (A) component (alkali-soluble resin): The alkali-soluble resin used as (A) component is not particularly limited, and can be arbitrarily selected from among those generally used as a film-forming material in a positive photoresist composition. For example, a phenol resin, a propylene resin, styrene ethyl 13-200523678 (11) a copolymer of olefin and acrylic acid, and hydroxystyrene, which are widely known as a resin for forming a film of a positive photoresist composition, can be mentioned. Polymers, polyethylene, poly-alpha-methyl vinyl phenol, etc. Among them, phenol resins are especially used, and among them, phenolic resins which are easily soluble in non-swelling alkali aqueous solution, and which are significantly different are suitable. For example, the condensation products of phenols and aldehydes, the condensation reaction products of phenols and ketones, ethylene benzene polymers, isopropenyl phenol polymers, and the application of these phenol resins Products, etc. Phenols forming the aforementioned phenol resin For example, cresols such as m-cresol, p-cresol, o-cresol, etc .; 2,3-xylene 2,5-xylenol, 3,5 • xylenol, 3,4_ Diphenols such as xylenol; m-ethylphenol, p-ethylphenol, o-ethylphenol, 2,3,5- benzoic acid, triethylphenol, 4-tert-butylphenol, 3-trisphenol Grade '' -tertiary butylphenol, octatributyl-4-methylphenol, 2-triyl-5-methylphenol and other alkylphenols; p-methoxyphenol, m-methoxy ' Ethoxyphenol, m-ethoxyphenol, p-propoxyphenol, alkoxyphenols of m-propoxybenzene; o-isopropenylphenol, p-isopropenylphenol, 4-isopropenylphenol, 2-ethyl- Isophenols such as 4-isopropenylphenol; Arylphenols such as phenylphenol; 4,4, -Dihydroxybisphenol bisphenol A; Polyhydroxyl such as resorcinol, hydroquinone, gallophenol Benzene, etc. These can be used alone or in combination of two or more. Among them, m-cresol, p-cresol, 2,5-xylenol, 3,5 monophenol, 2; 3 5 5 -Trimethylphenol is preferred. For example, formaldehyde, p-formaldehyde, and trioxol are excellent in synthesizing transphenol-based hydrogen transphenol, 2-methylpropenyl toluenol, butylenol, and the like, and phenol phenol dimethane, -14-200523678 (12 ) Acetaldehyde, propionaldehyde, butyraldehyde, trimethylacetaldehyde, acrolein, crotonaldehyde, cyclohexanealdehyde, furfural, furyl acrolein, benzaldehyde, terephthalaldehyde, phenylacetaldehyde, α-benzene Methylpropanal, M-phenylpropanal, o-hydroxybenzaldehyde, m-hydroxybenzaldehyde, p-hydroxybenzaldehyde, o-methylbenzaldehyde, m-methylbenzaldehyde, p-methylbenzaldehyde, o-chlorobenzaldehyde, m Chlorobenzaldehyde, p-chlorobenzaldehyde, cinnamaldehyde, etc. These can be used alone or in combination of two or more. Among these aldehydes, formaldehyde is preferred in terms of availability, and in particular, a combination of hydroxybenzaldehyde and formaldehyde may be used to improve heat resistance. Examples of the aforementioned ketones include acetone, methyl ethyl ketone, diethyl ketone'-phenyl- and the like. These can be used alone or in combination of two or more. Among the combinations of phenols and ketones, the combination of gallic phenol and acetone is particularly preferred. The condensation reaction product of phenols and aldehydes or ketones can be produced by a conventional method in the presence of an acidic catalyst. As the acidic catalyst at this time, hydrochloric acid, sulfuric acid, formic acid, oxalic acid, p-toluenesulfonic acid and the like can be used. The condensation product obtained in this way can be processed by fractionation or the like, so that those who cut the low-molecular field are excellent in heat resistance. Processing such as fractional distillation is to dissolve the resin obtained by the condensation reaction in a good solvent, such as alcohols such as methanol, ethanol, ketones such as acetone, methyl ethyl ketone, or ethylene glycol monoethyl ether acetate, Tetrahydrofuran and the like are then injected into the water to cause Shen Dian and the like. Among the above-mentioned ones, the p-cresol-based repeating unit contains 60 mol, especially in the perphenol-based repeating unit. /. The above is preferably a phenolic lacquer resin having a m-cresol-based repeating unit containing 30 mol% or more and having a polystyrene-equivalent weight average molecular weight (M w) of 2000 to 800. -15- 200523678 (13) When the p-cresol-based repeating unit is less than 60% of the ear, 'the sensitivity change is likely to be caused by the temperature unevenness compared with the heat treatment', and the formaline repeating unit is less than 3 0 moles. / 〇, there is a tendency that the sensitivity is deteriorated, so it is not good. In addition, it may contain xylenol-based repeating units or trimethylphenol-based repeating units, and other phenol-based repeating units may be used. However, it is most preferable that p-cresol-based repeating units 6 0 to 7 0 mol%, m-cresol-based repeating unit 40 ~ 3 0 mol% 2-phenol phenolic lacquer resin, phenolic dinuclear body (condensation molecule with 2 phenolic cores) content in GPC (gel permeation chromatography) method is preferably a phenolic lacquer resin having a low content of low-molecular-weight phenols such as 10% or less. The aforementioned dinuclear body can be sublimed in pre-baking or post-baking at a high temperature (for example,} 30 ° C), so that the top plate of the furnace is dirty, and then the glass substrate coated with photoresist is dirty, which reduces its productivity. The reason. Regarding the component (B) (sensitivity-enhancing agent): The component (B) is used, and a phenol compound represented by the above formula (I) is preferable. Examples of the (B) component include tris (4-hydroxyphenyl) methylamine, bis (4-hydroxy-3 -methylphenyl) -2-hydroxyphenylmethane, and bis (4-hydroxy-2) ; 3,5-trimethylphenyl) -2-hydroxyphenylmethane, bis (Chydroxy_ 3,5-dimethylphenyl) hydroxyphenylmethane, bis (4-meryl-3,5_ Dimethylphenyl) -3-hydroxyphenylmethane, bis (^ hydroxy-3,5-dimethylphenyl) -2-hydroxyphenylmethane, bis (Chydroxy-2,5-dimethylbenzene Hydroxyphenylmethane, bis (4-hydroxy-2; 5-dimethylphenyl) hydroxyphenylmethane, bis (4-hydroxy-2; 5-dimethylphenyl) -2 _hydroxyphenyl A hospital; -16- 200523678 (14) bis (4-hydroxy-3; 5-dimethylphenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethyl Phenyl) -3,4-dihydroxyphenylmethane, bis (4-hydroxy-2,5-dimethylphenyl) -2,4-dihydroxyphenylmethane, bis (4-hydroxyphenyl)- 3-methoxy-4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -4-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2 -Methylphenyl) -3-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy 2-methylphenyl) -2-hydroxyphenylmethane, bis (5-cyclohexyl-4-hydroxy-2-methylphenyl) -3,4-dihydroxyphenylmethane, 1- [1 -(4-hydroxyphenyl) isopropyl] -4- [1,1-bis (4-hydroxyphenyl) ethyl] benzene, 1- [1- (3-methyl-4-hydroxyphenyl) Isopropyl] -4- [1, bubis (3-methylhydroxyphenyl) ethyl] benzene, 2- (2,3,4-trihydroxyphenyl) -2- (2 ', 3', 4'-trihydroxyphenyl) propane, 2- (2,4-dihydroxyphenyl) -2- (2 ', 4'-dihydroxyphenyl) propane, 2- (4-hydroxyphenyl) -2 -(4'-hydroxyphenyl) propane, 2- (3-fluoro-4-hydroxyphenyl) -2- (3'-fluoro-41-hydroxyphenyl) propane, 2- (22--dihydroxybenzene ) -2- (4'-hydroxyphenyl) propane, 2- (2,354-trihydroxyphenyl) -2- (4'-hydroxyphenyl) propane, 2- (2,3,4-trihydroxybenzene ) -2- (4'-hydroxy-3 ', 5'-dimethylphenyl) propane, bis (2; 3,4-trihydroxyphenyl) methane, bis (2,4-dihydroxyphenyl) ) Methane, 2,3,4-trihydroxyphenyl-4'-hydroxyphenylmethane, 1,1-bis (4-hydroxyphenyl) cyclohexane, 2,4-bis [1 · (4-hydroxy Phenyl) isopropyl ] -5-hydroxy-phenol. Among these, since the effect of improving sensitivity is particularly excellent, bis (4-hydroxy-3-methylphenyl) -2-hydroxyphenylmethane and bis (4-hydroxy-2,3,5-trimethyl Phenyl) -2-hydroxyphenylmethane, 2; 4-bis [1- (4-hydroxyphenyl) isopropyl] -5 -hydroxyphenol,] 7 bis (4-hydroxyphenyl) cyclohexane ,]--17-200523678 (15) [1- (4-hydroxyphenyl) isopropyl] -4- [], bis (4-hydroxyphenyl) ethyl] benzene and the like are preferred. In the field of liquid crystal display device manufacturing, the improvement of productivity is a very large problem. However, the compounding of the phenol compound can achieve high sensitivity and increase productivity, which is preferable. In addition, with the combination of the phenol compound, a hardly soluble layer can be formed on the surface of the photoresist film, so the film thickness of the photoresist film in the unexposed part during development is reduced, and the difference in development time can be suppressed. It is better to have uneven development. Among the phenol compounds, a compound represented by the following formula (VI) (1 '[1- (4-Cyclophenyl) isopropyl] -4- [1,1-bis (4-xiangyl) Phenyl) ethyl) benzene) and a compound represented by the following formula (VII) (bis (2,3,5-trimethyl-hydroxyphenyl) -2-hydroxyphenylmethane) are highly sensitive, The residual film rate is excellent, and the linear improvement effect is particularly good.

-18-200523678 (16)

When the component (B) is blended, the content may be selected from the range of 5 to 25 parts by mass, and more preferably 10 to 20 parts by mass based on 1,000 parts by mass of the alkali-soluble resin having the component (a). If it is lower than this range, it will not be possible to obtain high sensitivity and increase the effect of high residual film rate. When it exceeds this range, residues will easily be generated on the substrate surface after development, and the cost of raw materials will be increased, which is not good. . Regarding the (C) component (photosensitive component): A benzoquinone diazido esterified product (photosensitive component 1) and a benzoquinone represented by the general formula (V) are used. At least one of the diazide esters (photosensitive component 2) is preferable, and especially the photosensitive component 1 and the photosensitive component 2 are mixed and used, even when using a large glass substrate having a size of 5000 x 600 mm or more. During processing, it can also provide a photoresist material with excellent macroscopic characteristics (coating properties, heating unevenness characteristics, and development unevenness characteristics). The average esterification rate of the photosensitive component 1 is preferably from 40 to 60%, and more preferably from 45 to 55.5%. If it is less than 40%, the film after development will become thin and prone to occur, making the residual film rate easy to decrease. When it exceeds 60%, the sensitivity tends to deteriorate significantly. -19- 200523678 (17) In terms of ^ photosensitive component], a compound represented by the following formula (vm) (bis (2, methyl-4_hydroxy-5_cyclohexylphenyl) · 3, anal dihydroxy 1,2,2,2-naphthoquinonediazide 5-benzoquinonediazide ester of sulfonyl compound, valence, can adjust sensitivity, resolution, lineanty The point of the photoresist composition is better. This lactonization rate of 50% is the best.

On the one hand, with respect to the photosensitive component 2, the basic formula of 2,3'454'-tetrahydrodiphenyl ketone 152 and naphthoquinonediazide-5-sulfonamidine compound represented by the following formula (ιχ) is shown below. Quinone diazide is preferred. The average vinegarization rate within the range of 50 to 70% is preferred, and more preferably 5 to 65%. If it is less than 50%, there is a tendency for the film to become thinner after development, which tends to reduce the residual film rate. On the other hand, when it exceeds 70%, storage stability tends to decrease. This photosensitive component 2 is very inexpensive, and it is preferable to adjust a photoresist composition having excellent sensitivity. Among them, the vinegarization rate of 59% is the best. HO ΟΗ

Dividable photosensitivity is described in addition to the divided photosensitivity Λ] / C with 2 things ο 2-acetazide diquinone benzene can be used for other purposes 200523678 (18) other benzoquinone diazide esters mentioned above The amount of the compound to be used in the (c) photosensitive component is preferably 30% by mass or less, particularly preferably 25% by mass or less. The mixing ratio of the photosensitive components 1 and 2 is set to 40 to 60 parts by mass of the photosensitive component 2 with respect to 50 parts by mass of the photosensitive component 1, and the range of 4 to 5 to 5 parts by mass is desired. . If the blending amount of the photosensitive component 2 is smaller than this range, the sensitivity tends to deteriorate, and if it is more than this range, the resolution of the photoresist composition 5 tends to deteriorate linearly. The compounding amount of the component (C) may be 1 500 mass parts with respect to the total amount of the alkali-soluble resin of the (A) component and the (B) component, 15 to 40 mass parts, and preferably 20 to 3 mass parts. Choose from 0 parts by mass. If the compounding amount of the component (C) is lower than the above range, a faithful image cannot be obtained in the pattern, and the reproducibility will also decrease. On the other hand, if the compounding amount of the (C) component exceeds the above range, the sensitivity or resolvability will deteriorate, and residues will tend to occur after the development process. Such a photoresist composition is preferably prepared by dissolving the components (A) to (C) and various additional components in the following component (D), which is an organic solvent, and using it as a solution. Regarding the (D) component (organic solvent): Examples of preferred organic solvents include acetone, methyl ethyl ketone, cyclohexanone, methyl isopentanone, 2-heptanone, and the like; Alcohol, propylene glycol, diethylene glycol, ethylene glycol monoacetate, propylene glycol monoacetate diethylene glycol-21-200523678 (19) Alcohol monoacetate, or monomethyl ether of these, monoethyl Ethers, monopropyl ethers, monobutyl ethers or monophenyl ethers and their polyvalent alcohols and their derivatives; dioxane-like cyclic ethers; and ethyl lactate, methyl gallate, ethyl gallate, butyl gallate Esters, methyl pyruvate, ethyl pyruvate, methyl methoxypropionate, ethyl ethoxypropionate and the like. These can be used alone or in combination of two or more. Among these, the use of propylene glycol monomethyl ether acetate (PGMEA) can impart excellent coating properties to the photoresist composition, and can impart excellent film thickness uniformity to the photoresist film on a large glass substrate. . It is best to use PGMEA alone! J, but solvents other than PGMEA can also be used in combination. Examples of such a solvent include ethyl lactate,? -Butyrolactone, and propylene glycol monobutyl ether. In the case of using ethyl lactate, the mass ratio to PGMEA is 0.1 to 10 times the amount, preferably in the range of 1 to 5 times the amount. In the case of using 7-butyrolactone, it is desirable that the mass ratio is from 0.01 to 1 times the amount of PGMEA, preferably from 0.5 to 0.5 times the amount. In the field of liquid crystal display device manufacturing, it is usually necessary to form a photoresist film on a glass substrate with a thickness of 0.5 to 2.5 μm, especially 1.0 to 2.0 μm. The total amount of the above components (A) to (C) in the solvent and the composition can be adjusted to 30% by mass or less with respect to the total mass of the composition, and preferably 20 to 28% by mass. It is suitable as a photoresist material for manufacturing a liquid crystal display element having excellent coating properties. In this case, the amount of the following (E) component arbitrarily used is also considered. The amount of the solvent (D) used is 6 5 to 8 5 with respect to the total mass of the composition.> 20-200523678 (20) mass%, It is preferably 70 to 75 mass%. Regarding the (E) component (other additives): For other components, an ultraviolet absorber for anti-halation, such as 252'5454'-tetrahydrohydroxydiphenyl ketone, 4-dimethylamino-2 ', 4'-Dihydroxydiphenyl ketone, 5-amino-3-methyl-1-phenyl-4- (4-hydroxyphenylazo) pyrazole, 4-dimethylamino-4'- Hydroxyazobenzene, 4-diethylamino-4'-ethoxyazobenzene, 4-diethylaminoazobenzene, glutamine, etc., or, in order to prevent streaks ) Used surfactants, such as Frarard FC-4 3 0, FC43 1 (trade name, manufactured by Sumitomo 3M), F-top EF122A, EF122B, EF122C, EF1 26 (trade name, T keke P 〇ducts company) Fluorine surfactants such as benzoquinone, naphthoquinone, p-toluenesulfonic acid, and other storage stabilizers, and if necessary, without affecting the present invention, they can be added and contain the addition of the tree moon purpose, which can be plasticized Additives, stabilizers, contrast enhancers and other conventional additives. Hereinafter, the method for forming the photoresist pattern of the present invention and the embodiment of the method for forming the fine pattern using the present invention are exemplified by examples applicable to the manufacture of a liquid crystal display element, and refer to FIG. 1A to 1 Figure G illustrates. First prepare the substrate. The substrate in the present invention is not particularly limited, but when a substrate in which two or more layers must be etched on a substrate is used, the effect of the present invention is effectively obtained. In the case of manufacturing a liquid crystal display element, the substrate is 0 series, for example, as shown in FIG. A, on a glass substrate], the gate electrode 2, the first insulating film 3, and the] amorphous silicon dioxide film 4 'are etched. Stop film 5 ', second amorphous 23-23-200523678 (21) A silicon oxide film 6' and a source film 7 'forming a metal film 7' have a multilayer structure laminated in order from the glass substrate 1 side use. The patterning of the gate electrode 2 can be performed in the order shown in the above-mentioned Figs. 2 to 4 (including the first photolithography step). The size of the glass substrate is not particularly limited, but it can be a large-sized substrate with a size of 500 x 600 mm2 or more, in particular, a size of 5 500 to 650 m 2 or more. The gate electrode 2 is formed of a conductive material using a metal such as aluminum (A1), chromium (Cr), titanium (Ti) ', or manganese (Mo). The first insulating film 3 is formed of, for example, SiNx. The etching stopper film 5 'is formed of, for example, SiNx. &lt; The metal film 7 'for forming a source / drain electrode is formed of, for example, a laminated film in which titanium (Ti), aluminum (A1), and titanium (Ti) are laminated in this order. (A) First, a photoresist film R ′ is formed on the substrate 10. Specifically, the photoresist composition is coated on the substrate 10, and the photoresist film R 'can be formed by heating and drying (pre-baking) at about 100 to 140 ° C. The thickness of the photoresist film R 'is preferably about 1.0 to 3.0 μm. When the thickness of the photoresist film R 'is within this range, the level difference can be formed within a range of moderate exposure and exposure time', and the point where the shape of the level difference is well resolved is better. (B) Next, after the photolithography step, as shown in Fig. 1b, the photoresist film R 'is patterned into a pattern having a thick wall portion r1 and a thin wall portion r2. Specifically, for example, through a halftone (ha) f tone mask, etc.-24-200523678 (22) A mask (grating retic 1 e) whose pass rate is set is selective with respect to the photoresist film R Exposure, subsequent development, and water washing can form photoresist patterns with different thicknesses depending on the field. (Second photolithography step) (C) After patterning, UV (ultraviolet) curing is performed to obtain the segmented photoresist pattern R shown in FIG. 1B. The thickness difference between the thick wall portion rl and the thin wall portion r2 in the segmented photoresist pattern type R can be removed only by the subsequent ashing treatment so that the thick wall portion 1.1 remains with an appropriate thickness. It is preferably about 0.5 to 1.5 μm, and a more preferable range is about 0.7 to 1.3 μm. UV curing can be performed using a well-known method. For example, using a well-known ultraviolet irradiation device to illuminate ultraviolet rays in a patterned photoresist pattern. The irradiation conditions of ultraviolet rays do not deform the shape of the photoresist pattern due to UV curing. The segmented photoresistance type R with good heat resistance uses ultraviolet rays with a wavelength from the Deep UV field through the visible light field (wavelength of about 100 to 7000 nm), and especially uses 2000 to 5000 nm. The ultraviolet light of the left and right wavelengths is the main output light source, and it is better to irradiate with an irradiation amount of about 100 ~ 5000 m J / c m2. A better irradiation dose is about 2000 ~ 1500 mJ / cm2. The amount of exposure is controlled by the intensity and duration of the ultraviolet rays. In addition, when UV curing (irradiation), in order to prevent wrinkles in the irradiated area, it is desirable to control the temperature increase caused by the irradiated irradiation or the irradiation. (D) After UV curing, post-baking can be performed. Specifically, the post-baking treatment is carried out at a temperature of 100 to 170 ° C, and 3 to -25 to 200523678 (23) heat treatment. The better heating conditions are 1 2 0 to 1 3 crc, about 4 to 6 minutes. ○ Baking treatment is not necessary after this, but the post-baking can improve the heat resistance of the segmented photoresist pattern R. In addition, in order to improve the adhesion between the segmented photoresist pattern R and the substrate 10 by the post-baking treatment, it is particularly effective to obtain high resistance to the wet etching treatment. In addition, the heat resistance of the segmented photoresist pattern R can be improved by UV curing, so there is no need to worry about the pattern being deformed in the post-baking step. In addition, the UV curing treatment and the post-baking treatment may be performed as desired after the ashing treatment of the segmented photoresist pattern R in the step (F) described later. (E) Using the segmented photoresist pattern R thus formed as a photomask, as shown in FIG. 1C, the metal film 7 'of the substrate 10 is etched. The etching of the metal film 7 'can be performed by a known method. Generally speaking, wet etching can be used, and dry etching can also be used. Next, using the same segmented photoresist pattern R as a photomask, as shown in FIG. 1D, the second amorphous silicon dioxide film 6 ′ exposed by the aforementioned etching of the metal film 7 ′ and the etched file below it The stopper film 5 'and the first amorphous silicon dioxide film 4' are etched. The etching of these layers can be performed in a known manner. Generally speaking, a dry etching process can be used. Here, the segmented photo pattern R is used as a mask for uranium engraving, and can form an etch stop film 5 and a first amorphous sand layer 4. (F) Thereafter, an ashing process is performed on the segmented photoresist pattern R, and as shown in FIG. E), the thin-walled portion r2 can be removed. The ashing treatment can be performed by the well-known method -26- 200523678 (24). When the segmented photoresist pattern R is ashed, the thick-walled portion r 1 and the thin-walled portion r2 are thinned at the same time. After all, the thin-walled portion r2 can be completely removed, and the metal film 7 ′ below is exposed and the thick-walled portion is exposed. The portion r 1 remains in a state. In this state, the ashing process is stopped, and only the thin-walled portion 2 can be removed. If the remaining thick wall portion r 1 is too thin, the function as an etching mask is insufficient. Therefore, the thickness of the remaining thick wall portion r 1 is preferably 0.7 μm or more. (G) Next, as shown in FIG. 1F, the metal film W exposed by the removal of the thin-walled portion r2 and the remaining thick-walled portion r 1 as a photomask are etched to form a source electrode and a drain electrode. 7. Next, as shown in FIG. 1G, the second amorphous silicon dioxide film 6 'exposed by the previous etching process of the metal film 7' is etched with the remaining thick wall portion r1 as a photomask. A patterned second amorphous sand dioxide film 6 is formed. (Ii) Thereafter, the thick portion r 1 is removed. The method of removing the thick portion r 1 can be performed by a known method such as an ashing treatment. In the steps so far, a fine pattern with the same structure as the one shown in Fig. 10 can be obtained. Thereafter, the same steps as those shown in the aforementioned Figures Π to 15 can be used to manufacture a liquid crystal array substrate. That is, (I), as shown in Fig. 11, the second insulating film 8 'is formed on the fine pattern obtained in the previous step. The second insulating film ^ can be formed of, for example, SiNx. (J) Containing a step of forming a photoresist film on the second insulating film 81, and selectively exposing the photoresist film through a photomask, photolithography,-27- 200523678 (25) patterning, As shown in FIG. 12, a photoresist pattern R4 can be formed (the third photolithography step). The obtained photoresist pattern R4 is used as a photomask, and after the second insulating film 8 ′ is etched, the photoresist pattern R4 is removed. As shown in FIG. 13, a pattern which is patterned into a shape having a contact hole can be obtained. 2 Insulation film 8. (K) As shown in Fig. 14, a transparent conductive film 9 'is formed on the patterned second insulating film 8. The transparent conductive film 9 'can be formed of, for example, ITo (Indium Tin Acidate). (L) Contains a step of forming a photoresist film on the transparent conductive film 9 ′, and selectively exposing the photoresist film through a photomask, and photolithography, which is patterned, as shown in FIG. 15 To form a photoresist pattern R5 (4th photolithography step). 'Thereafter, the obtained photoresist pattern R5 is used as a photomask to perform the transparent conductive film 9' After the photoresist pattern R5 is removed, the patterned transparent conductive film 9 shown in FIG. 16 can be formed. A liquid crystal array substrate can be obtained. A liquid crystal display element can be obtained by combining the liquid crystal array substrate and the counter substrate thus obtained by sandwiching liquid crystals by a known method. According to this embodiment, a segmented photoresist pattern R having a high etching resistance can be formed, and using this segmented photoresist pattern R as a photomask, the metal film 7 ′ of the substrate 10 and the second amorphous dioxide can be formed. After the silicon film 6 ', the etch stop film 5', and the first amorphous silicon dioxide film 4 'are etched, the thick-walled portion 1 * 1 of the segmented photoresist pattern R can be used as a photomask to perform metallization. Etching of the film 7, and the second amorphous silicon dioxide film 6 '. Therefore, the number of steps of photolithography-28- 200523678 (26) can be reduced in the manufacturing steps of the liquid crystal array substrate. For example, in the conventional method shown in FIGS. 2 to 15, it is necessary to perform the photolithography step five times (the first to fifth photolithography steps) to manufacture a liquid crystal array substrate. In this embodiment, The liquid crystal array substrate of the same structure can be manufactured in 4 photolithography steps (1st to 4th photolithography steps). As a result, the consumption of photoresist can be suppressed, and since the steps are simplified, the manufacturing cost of the liquid crystal array substrate can be reduced. In addition, the segmented photoresist pattern R formed in this embodiment has good heat resistance and can be prevented from deforming during post-baking treatment. With the implementation of post-baking, the heat resistance and etching resistance of the segmented photoresist pattern can be further improved. In addition, the rate of this embodiment is to make the segmented photoresist pattern into a concave section and segmented photoresist pattern. Because the thickness is not the same in different fields, it is better if it has the shape of thick-walled part and thin-walled part. The fine pattern that can be formed by etching can be designed according to the shape. For example, the cross-sectional convex shape of the thin-walled portion may be provided on the outer side of the thick-walled portion, or the cross-sectional mountain shape may be provided. In addition, in this embodiment, it can be applied to the manufacturing steps of the a-S i (amorphous silicon dioxide) -shaped τ FT array substrate having the structure shown in FIG. 16 of the present invention, but it is not limited to the liquid crystal array having this structure. Substrate. The present invention is applicable to the manufacture of a liquid crystal array substrate having various pixel patterns. Using the fine pattern forming method of the present invention to form a part of a pixel pattern, the same effect as that of this embodiment can be obtained. [Embodiment] [Example] In the following examples and comparative examples, segmented photoresist patterns were formed to evaluate -29-200523678 (27) Valence heat resistance, dry etching resistance 'and wet etching resistance. The characteristics were evaluated by the following methods. (1) Evaluation of heat resistance: Relative to the photoresist pattern obtained in the examples and comparative examples, heat treatment was performed at 130t and 300 seconds, so that the shape of the photoresist pattern did not deform. 0, ~ deformed Is X. '(2) Evaluation of dry etching resistance: The dry etching device "TCE-7612X" (device name; manufactured by Tokyo Yingka Kogyo) was used for the photoresist pattern obtained in the examples and comparative examples. CHF3y He, each 40ml / min, 40ml / min, 160ml / min, under a reduced pressure atmosphere of 300mT0rr (and 39.9Pa), 700W-400kHz, stage temperature: 20 ° C, target ( target) Temperature: Dry etching treatment at 25 ° C. Before and after the treatment, the shape of the photoresist pattern is not deformed, and the deformed shape is X. 0 Evaluation of wet etching resistance: The substrate formed by the photoresist pattern is set to 2 (TC wet etching solution [containing hydrofluoric acid (HF) / fluorinated) relative to the photoresist pattern obtained in Examples and Comparative Examples. Ammonium (NH4F) = 1/6 (mass ratio) of a 20% by mass aqueous solution of the mixture], immersed for 10 minutes to perform a wet etching treatment, and the photoresist pattern after the treatment is 〇, which is not peeled from the base substrate can be completed The peeler is X. -30- 200523678 (28) (Example 1) A positive photoresist composition is prepared. (A) Ingredient: cresol novolac resin [m-cresol / p-cresol = 4/6 (mol Ear ratio) mixed phenols and formaldehyde are obtained by condensation reaction according to a conventional method. The resin having a weight average molecular weight (Mw) = 5000 is 100 parts by mass. (B) Ingredient: [double (2,3 5 5 -3) Methyl-4-hydroxyphenyl) -2-hydroxyphenylmethane] 10 parts by mass, (C) component: [2 5 3,4 5 4'_tetrahydrohydroxydiphenyl ketone 1 mole and 1, 2-naphthoquinonediazide-5-sulfonyl chloride 2.34 moles of esterification reaction product] 29.7 parts by mass, (D) component: 430 parts by mass of [PGMEA] is prepared, and (A) to (D) ) After the ingredients are uniformly dissolved, This surfactant is based on the combination of B YK-3 10, Byk-C hem 1 e company] 4 00PPm, and this is filtered using a membrane filter with a pore size of 0.2 μm to prepare a positive photoresist composition. The obtained positive-type photoresist composition was spin-coated at 100 Orpm for 10 seconds using a photoresist coating device [TR-3600 (made by Tokyo Yingka Kogyo Co., Ltd.)] caused by a central dropping &amp; spin coating method. A photoresist layer can be formed on the glass substrate (360 mm X 460 mm) formed by the Ti film. Next, the temperature of the hot plate is set to 3 ° C, and the interval of about 1 mm is opened. Proximity baking (Pr0X imitybake) was dried for the first time in 60 seconds, then the temperature of the hot plate was set to 120 ° C, and second proximity baking was performed for 60 seconds by opening the 0.5mm interval proximity baking. It is dried to form a photoresist film with a thickness of 2.0 μm. The photoresist film is selectively exposed through a photomask, developed, washed and patterned, and then a high-pressure mercury lamp (wavelength -31- 200523678 (29) 2 0 ~ 6 0 0 nm light output), UV irradiation of 3 00 mJ / cm2 (Irradiation) processing to form a segmented photoresist pattern. The resulting segmented photoresist pattern is shown in Fig. 1 with a concave cross section, a thickness of a thick wall portion of 2.0 μm, and a thickness of a thin wall portion of 0.8 μm The width of the whole is 13 μηι, and the width of the thin-walled part is 5 μηι. · The results of this step-shaped photoresist pattern evaluation of heat resistance, dry etching resistance ', and wet etching resistance are shown in Table 1 below. (Example 2) A segmented photoresist pattern was formed in the same procedure as in Example 1 using a positive type photoresist composition similar to Example 1. However, the shape of the segmented photoresist pattern is convex in cross section, and its size is 2.0 μηι for the thick-walled part, 0.8 μιη for the thin-walled part, 13 μηι for the entire width, and 5 μηα for the thick-walled part. 〇 The results of evaluating the photoresist pattern of this segment are shown in Table 1 below. The results of evaluation of heat resistance, dry etching resistance ', and wet etching resistance are shown below. Φ (Example 3) In the same manner as in Example 1, after forming a segmented photoresist pattern, on the other hand, 13 (TC, 300 seconds after baking treatment was performed. Regarding the segment shape after the post-baking treatment The photoresist pattern, the evaluation of heat resistance, dry etching resistance, and wet etching resistance are shown in Table 1 below. (Example 4) -32-200523678 (30) A segmented light was formed in the same manner as in Example 2. After the resist pattern, a baking process was performed at 130 ° C for 3 seconds, and the photoresist pattern after the post-bake process was evaluated for heat resistance, dry etching resistance, and wet etching resistance. The results are shown in Table 1 below. (Comparative Example 1) Except that the UV curing treatment was not performed in Example 1, a segmented photoresist pattern was similarly formed. # Regarding this segmented photoresist pattern, evaluation The results of heat resistance, dry etching resistance, etching resistance, and wet etching resistance are shown in Table 1 below. (Comparative Example 2) 乂 Except that in Example 2, UV curing treatment was not performed, and the other sections were formed in the same manner. Photoresist pattern of this shape. About this segment of photoresist pattern, evaluate heat resistance, dry etching resistance, and moisture resistance. The sharp results are shown in the following table]. Φ (Comparative Example 3) The post-baking treatment was performed in the same manner as in Example 3 above with respect to the segmented photoresist pattern obtained in Comparative Example 1 (without UV curing). The results of the step-shaped photoresist pattern after the post-baking treatment, 'evaluation of heat resistance', dry etching resistance, and wet etching resistance are shown in Table 1 below. (Comparative Example 4) -33- 200523678 (31) The post-baking treatment was performed on the segmented photoresist pattern obtained in Comparative Example 2 (without UV curing) in the same manner as in Example 4. Regarding the segmented photoresist pattern after the post-baking treatment, heat resistance was evaluated. The results of dry etching resistance and wet etching resistance are shown in the following Table 1. [Table 1] Baking heat resistance after UV curing, dry etching resistance, wet etching resistance Example 1 There is a button j \ \\ 〇〇X Example 2 Presence or absence of Example 0X Example 3 Presence or absence of Example 4 Presence or absence of Comparative Example 1 4rrr. Gong Wu XXX Comparative Example 2 Dirty j \ \\ j \ \\ XXX Comparative Example 3 Μ j Yes — ※ ※ ※ Comparative Example 4 None ※ — — ※ __ ※ ※: Post-baking After processing, the photoresist pattern will be deformed, so the evaluation of heat resistance, dry etching resistance, and wet uranium etch resistance will not be performed. [Brief Description of the Drawings] [Figures 1A to 1G] show the present invention The photoresist pattern formation method and the micro pattern formation method are implemented in a sectional view in the order of steps. [Fig. 2] A sectional view showing a part of the manufacturing steps of a conventional liquid crystal array substrate. -34- 200523678 (32) [Figure 3] A part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. [Figure 4] A part of the conventional manufacturing steps of the conventional liquid crystal array substrate is continued with the cross-sectional view of the previous figure. [Fig. 5] Part of the manufacturing steps of the conventional liquid crystal array substrate is partially extended. [Figure 6] A part of the conventional manufacturing steps of the conventional liquid crystal array substrate is continued with the cross-sectional view of the previous figure. · [Figure 7] Part of the conventional manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. [Fig. 8] A part of the conventional manufacturing steps of the conventional liquid crystal array substrate is continued with the cross-sectional view of the previous figure. [Figure 9] A part of the conventional manufacturing steps of the conventional liquid crystal array substrate is continued with the cross-sectional view of the previous figure. [Fig. 10] A part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the sectional view of the previous figure. φ [Figure 11] Part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. [Fig. 12] A part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the sectional view of the previous figure. [Figure 13] Part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. [Fig. 4] A part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. -35-200523678 (33) [Figure 15] Part of the manufacturing steps of the conventional liquid crystal array substrate is continued from the cross-sectional view of the previous figure. [FIG. 16] A cross-sectional view illustrating a liquid crystal array substrate. [Description of Symbols of Main Components] 10: Substrate 1: Glass substrate 2: Gate electrode 3: First insulating film 4 ': First amorphous silicon dioxide film 5': Etching stop film 6 |: Second amorphous second Silicon oxide film 7 ′: Metal film photoresist film for source-drain electrode formation r 1: Thick wall portion r2: Thin wall portion R4: Photoresist pattern 8 ^ Second insulating film 9 ′: Transparent conductive film R5: Photoresist pattern Model -36-

Claims (1)

200523678 (1) X. Application for patent scope 1. A method for forming a photoresist pattern, comprising: (A) a step of forming a photoresist film on a substrate; and (B) a photomicrograph containing selective exposure The shadowing step is a step of patterning the aforementioned photoresist film into a pattern shape having a thick wall portion and a thin wall portion, and (C) performing the aforementioned patterning and then performing a UV curing treatment to form a thick wall. Steps of stepwise photoresist pattern for thin sections and thin sections. 2. The method for forming a photoresist pattern according to item 1 of the patent application scope, which comprises (D) a step of performing a post-baking treatment after performing the aforementioned UV curing treatment. 3. The method for forming a photoresist pattern as described in item [Scope of the patent application], wherein the above-mentioned substrate has, 'the gate electrode on a glass substrate, a first insulating film, a first amorphous sand dioxide film, and uranium A multilayer structure in which a stop film, a second amorphous silicon dioxide film, and a metal film for forming a source / drain electrode are laminated in this order from a glass substrate side. 4. The method for forming a photoresist pattern as described in item 2 of the scope of the patent application, wherein the above-mentioned base system has, on a glass substrate, a gate electrode, a first insulating film, a first amorphous silicon dioxide film, and an etching file. A multilayer structure in which a stop film, a second amorphous silicon dioxide film, and a metal film for forming a source / drain electrode are laminated in this order from a glass substrate side. 5 · A method for forming a fine pattern, which is characterized in that after forming the aforementioned segmented photoresist pattern by the method described in item 1 of the scope of patent application, it has (E) making the segmented photoresist pattern After the substrate is etched as a photomask, (F) is ashed with respect to the segmented photoresist pattern, -37- 200523678 (2) the thin-walled portion is removed, and (G) the thin-walled portion is removed After the part, the part is used as a photomask to perform an etching treatment on the aforementioned substrate, and then (Η) a step of removing the thick-walled part of the photoresist pattern. 6. A method for forming a fine pattern, which is characterized in that the aforementioned segmented photoresist pattern is formed by the method described in item 2 of the profit range. (E) The segmented photoresist pattern is used as a photomask. After the substrate is etched, (F) is ashed relative to the segmented photoresist pattern to remove the thin-walled portion, (G) after removing the thin-walled portion, the portion is used as a photomask to perform an etching treatment on the substrate. Then, (ii) the steps of the thick wall portion of the segmented photoresist pattern. 7 · A method for forming a fine pattern, characterized in that the segmented light P and the pattern are formed by the method described in item 3 of the profit range, and (Ε) makes the segmented photoresist pattern as light After the mask is etched on the substrate, (F) is ashed relative to the segmented photoresist pattern to remove the thin-walled portion, and (G) after removing the thin-walled portion, the portion is used as a mask to perform etching on the substrate. The processing is followed by (i) the step of the thick wall portion of the segmented photoresist pattern. 8 · A method for forming a fine pattern, characterized in that the aforementioned segmented photoresist pattern is formed by the method described in item 4 of the scope of profitability ('), and the segmented photoresist pattern is used as a photomask. After the substrate is etched, (F) is ashed to remove the thin-walled portion relative to the segmented photoresist pattern, and (G) the thin-walled portion is removed, and then an etching process is performed on the substrate as a photomask. Then (i) a step of removing the thick wall portion of the segmented photoresist pattern. After the thick wall has been applied for the aforementioned application, it must be etched to remove the rh ξ main acre δ 円 専 before the thick wall is etched to remove the front nail 5B before the thick wall. Thick wall part goes to the aforementioned -38- 200523678 (3) 9. A method for forming a fine pattern is characterized in that after forming the aforementioned segmented photoresist pattern by the method described in item 3 of the scope of patent application, it has, (E ') Use the segmented photoresist pattern as a photomask, and make the metal film for source-drain electrode formation, the second amorphous silicon dioxide film, the etch stop film, and the first amorphous dioxide After the silicon film is etched, (F) is ashed with respect to the segmented photoresist pattern to remove the thin-walled portion, and (G ') removes the thin-walled portion, and then uses the thick-walled portion as a photomask. The metal film for forming the source-drain electrode and the second amorphous silicon dioxide film are etched to expose the etch stop film layer, and thereafter (Η) a step of removing the thick-walled portion of the segmented photoresist pattern. . 1 〇 — A method for forming a fine pattern, characterized in that, after forming the aforementioned segmented photoresist pattern by the method described in item 4 of the scope of the patent application, it has (E ′) the aforementioned segmented photoresist The pattern is used as a photomask, and the metal film for source electrode formation, the second amorphous sand dioxide film, the uranium stop film, and the first amorphous silicon dioxide film are etched. (F ) Perform ashing treatment on the segmented photoresist pattern to remove the thin-walled portion, (G ′) After removing the thin-walled portion, use the thick-walled portion as a photomask, and use the metal film for source electrode formation and The second amorphous dioxide film is subjected to an etching treatment to expose the etching stopper film layer, and thereafter (i) a step of removing the thick-walled portion of the segmented photoresist pattern. 1 1 · The method for forming a fine pattern as described in item 9 of the scope of the patent application, wherein the etching treatment of the metal film for source-drain electrode formation is a wet etching process or a dry etching process, and the aforementioned second amorphous silicon dioxide film The etching process is a dry contact etch process. -39-200523678 (4) 1 2. The method for forming a fine pattern as described in item 10 of the scope of patent application, wherein the etching process of the metal film for forming the source / drain electrode is a wet etching process or a dry etching process. The uranium etching process of the second amorphous silicon dioxide film is a dry etching process. 1 3. A method for manufacturing a liquid crystal display element, which has a step of forming a liquid crystal array substrate by forming a pixel pattern on a glass lobe and a glass substrate, wherein a part of the aforementioned pixel pattern is based on , Such as those formed by the method of forming the fine pattern described in any one of the patent application scope 5 ~ 8 Φ. 14. A method for manufacturing a liquid crystal display element, characterized in that, after forming a fine pattern by the method described in any one of items 9 to 12 of the scope of application for a patent, (I) having the fine pattern A step of setting a second insulating film on the mold, (J) a step of patterning the second insulating film by photolithography, and (K) forming a transparent conductive film on the patterned second insulating film Step (L) a step of patterning the transparent conductive film by lithography. β -40-