CH648453GA3 - - Google Patents

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Publication number
CH648453GA3
CH648453GA3 CH63581A CH63581A CH648453GA3 CH 648453G A3 CH648453G A3 CH 648453GA3 CH 63581 A CH63581 A CH 63581A CH 63581 A CH63581 A CH 63581A CH 648453G A3 CH648453G A3 CH 648453GA3
Authority
CH
Switzerland
Prior art keywords
transistors
source
substrate
constant voltage
series
Prior art date
Application number
CH63581A
Other languages
English (en)
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of CH648453GA3 publication Critical patent/CH648453GA3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/84—Combinations of enhancement-mode IGFETs and depletion-mode IGFETs
    • G—PHYSICS
    • G04—HOROLOGY
    • G04G—ELECTRONIC TIME-PIECES
    • G04G19/00—Electric power supply circuits specially adapted for use in electronic time-pieces
    • G04G19/02—Conversion or regulation of current or voltage
    • G04G19/06—Regulation
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
CH63581A 1980-02-01 1981-01-30 CH648453GA3 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1102180A JPS56108258A (en) 1980-02-01 1980-02-01 Semiconductor device

Publications (1)

Publication Number Publication Date
CH648453GA3 true CH648453GA3 (enrdf_load_stackoverflow) 1985-03-29

Family

ID=11766445

Family Applications (1)

Application Number Title Priority Date Filing Date
CH63581A CH648453GA3 (enrdf_load_stackoverflow) 1980-02-01 1981-01-30

Country Status (3)

Country Link
US (1) US4417263A (enrdf_load_stackoverflow)
JP (1) JPS56108258A (enrdf_load_stackoverflow)
CH (1) CH648453GA3 (enrdf_load_stackoverflow)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1218845B (it) * 1984-03-30 1990-04-24 Ates Componenti Elettron Circuito di interfaccia attenuatore di rumore per generatori di segnali di temporizzazione a due fasi non sovrapposte
US4730228A (en) * 1986-03-21 1988-03-08 Siemens Aktiengesellschaft Overtemperature detection of power semiconductor components
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
JP3342730B2 (ja) * 1993-03-17 2002-11-11 富士通株式会社 不揮発性半導体記憶装置
US6198337B1 (en) * 1996-12-11 2001-03-06 A & Cmos Communications Device Inc. Semiconductor device for outputting a reference voltage, a crystal oscillator device comprising the same, and a method of producing the crystal oscillator device
US6144248A (en) * 1998-07-16 2000-11-07 Ricoh Company, Ltd. Reference voltage generating circuit having a temperature characteristic correction circuit providing low temperature sensitivity to a reference voltage
JP4194237B2 (ja) 1999-12-28 2008-12-10 株式会社リコー 電界効果トランジスタを用いた電圧発生回路及び基準電圧源回路
US6552603B2 (en) 2000-06-23 2003-04-22 Ricoh Company Ltd. Voltage reference generation circuit and power source incorporating such circuit
JP3717388B2 (ja) 2000-09-27 2005-11-16 株式会社リコー 基準電圧発生回路及びその出力値調整方法並びに電源装置
JP4765168B2 (ja) * 2001-01-16 2011-09-07 富士電機株式会社 基準電圧半導体装置
JP4691846B2 (ja) * 2001-07-16 2011-06-01 富士電機システムズ株式会社 Ｍｏｓ基準電圧回路およびその製造方法
JP3575453B2 (ja) 2001-09-14 2004-10-13 ソニー株式会社 基準電圧発生回路
JP4117780B2 (ja) * 2002-01-29 2008-07-16 セイコーインスツル株式会社 基準電圧回路および電子機器
JP4150326B2 (ja) * 2003-11-12 2008-09-17 株式会社リコー 定電圧回路
US7394209B2 (en) 2004-02-11 2008-07-01 02 Micro International Limited Liquid crystal display system with lamp feedback
JP2006313438A (ja) * 2005-05-06 2006-11-16 Mitsumi Electric Co Ltd 基準電圧生成回路
JP4713280B2 (ja) * 2005-08-31 2011-06-29 株式会社リコー 基準電圧発生回路及び基準電圧発生回路を使用した定電圧回路
JP4624890B2 (ja) * 2005-09-05 2011-02-02 富士通セミコンダクター株式会社 回路設計方法及びシミュレーションシステム
US7659756B2 (en) * 2005-09-29 2010-02-09 Supertex, Inc. MOSFET transistor amplifier with controlled output current
JP4716887B2 (ja) * 2006-02-09 2011-07-06 株式会社リコー 定電流回路
JP5511166B2 (ja) * 2008-09-10 2014-06-04 セイコーインスツル株式会社 半導体装置
CN102483634B (zh) * 2009-06-26 2015-01-07 密执安州立大学董事会 具有双晶体管设计的参考电压发生器
JP5470128B2 (ja) * 2010-03-26 2014-04-16 ローム株式会社 定電圧回路、コンパレータおよびそれらを用いた電圧監視回路
JP2012075049A (ja) * 2010-09-29 2012-04-12 Dainippon Printing Co Ltd 論理否定型電子回路
JP6205238B2 (ja) * 2013-10-25 2017-09-27 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
JP6215652B2 (ja) * 2013-10-28 2017-10-18 エスアイアイ・セミコンダクタ株式会社 基準電圧発生装置
JP6384956B2 (ja) * 2014-11-07 2018-09-05 富士電機株式会社 半導体回路装置
US10446567B2 (en) * 2017-03-31 2019-10-15 Asahi Kasei Microdevices Corporation Nonvolatile storage element and reference voltage generation circuit
US11611000B2 (en) 2017-10-03 2023-03-21 Asahi Kasei Microdevices Corporation Nonvolatile storage element and analog circuit provided with same
JP7000187B2 (ja) * 2018-02-08 2022-01-19 エイブリック株式会社 基準電圧回路及び半導体装置
EP4033661B1 (en) 2020-11-25 2024-01-24 Changxin Memory Technologies, Inc. Control circuit and delay circuit
US11681313B2 (en) 2020-11-25 2023-06-20 Changxin Memory Technologies, Inc. Voltage generating circuit, inverter, delay circuit, and logic gate circuit
EP4033312B1 (en) 2020-11-25 2024-08-21 Changxin Memory Technologies, Inc. Control circuit and delay circuit
EP4033664B1 (en) * 2020-11-25 2024-01-10 Changxin Memory Technologies, Inc. Potential generation circuit, inverter, delay circuit, and logic gate circuit
JP2024080058A (ja) * 2022-12-01 2024-06-13 ローム株式会社 電圧生成回路
EP4435554A1 (en) * 2023-03-24 2024-09-25 Nexperia B.V. Reference voltage circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346344A (en) * 1979-02-08 1982-08-24 Signetics Corporation Stable field effect transistor voltage reference
US4321484A (en) * 1979-02-28 1982-03-23 International Business Machines Corporation Field effect transistor multivibrator
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques

Also Published As

Publication number Publication date
JPH0465546B2 (enrdf_load_stackoverflow) 1992-10-20
JPS56108258A (en) 1981-08-27
US4417263A (en) 1983-11-22

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