CH621891A5 - - Google Patents
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- Publication number
- CH621891A5 CH621891A5 CH725377A CH725377A CH621891A5 CH 621891 A5 CH621891 A5 CH 621891A5 CH 725377 A CH725377 A CH 725377A CH 725377 A CH725377 A CH 725377A CH 621891 A5 CH621891 A5 CH 621891A5
- Authority
- CH
- Switzerland
- Prior art keywords
- region
- gate electrode
- transistor
- conductivity type
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 45
- 230000005669 field effect Effects 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 62
- 238000009792 diffusion process Methods 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000009421 internal insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7606483A NL7606483A (nl) | 1976-06-16 | 1976-06-16 | Inrichting voor het mengen van signalen. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH621891A5 true CH621891A5 (ja) | 1981-02-27 |
Family
ID=19826375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH725377A CH621891A5 (ja) | 1976-06-16 | 1977-06-13 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4143387A (ja) |
| JP (1) | JPS52154379A (ja) |
| AU (1) | AU510665B2 (ja) |
| BE (1) | BE855685A (ja) |
| CA (1) | CA1107404A (ja) |
| CH (1) | CH621891A5 (ja) |
| DE (1) | DE2725115A1 (ja) |
| FR (1) | FR2355378A1 (ja) |
| GB (1) | GB1580847A (ja) |
| IT (1) | IT1083818B (ja) |
| NL (1) | NL7606483A (ja) |
| SE (1) | SE7706828L (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4399417A (en) * | 1980-06-06 | 1983-08-16 | Bell Telephone Laboratories, Incorporated | Integrated CRC filter circuit |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
| US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
| US4847517A (en) * | 1988-02-16 | 1989-07-11 | Ltv Aerospace & Defense Co. | Microwave tube modulator |
| FI953433A (fi) * | 1995-07-14 | 1997-01-15 | Nokia Mobile Phones Ltd | Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin |
| US6051856A (en) * | 1997-09-30 | 2000-04-18 | Samsung Electronics Co., Ltd. | Voltage-controlled resistor utilizing bootstrap gate FET |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL236158A (ja) * | 1958-02-17 | |||
| GB1153428A (en) * | 1965-06-18 | 1969-05-29 | Philips Nv | Improvements in Semiconductor Devices. |
| FR1572934A (ja) * | 1967-10-09 | 1969-06-27 | ||
| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
| JPS4831516B1 (ja) * | 1969-10-17 | 1973-09-29 | ||
| JPS4936515B1 (ja) * | 1970-06-10 | 1974-10-01 | ||
| US3700976A (en) * | 1970-11-02 | 1972-10-24 | Hughes Aircraft Co | Insulated gate field effect transistor adapted for microwave applications |
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| US3999210A (en) * | 1972-08-28 | 1976-12-21 | Sony Corporation | FET having a linear impedance characteristic over a wide range of frequency |
| JPS563675B2 (ja) * | 1973-08-11 | 1981-01-26 | ||
| US4001860A (en) * | 1973-11-12 | 1977-01-04 | Signetics Corporation | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
| JPS584851B2 (ja) * | 1975-10-27 | 1983-01-28 | ソニー株式会社 | シユウハスウヘンカンキ |
-
1976
- 1976-06-16 NL NL7606483A patent/NL7606483A/xx not_active Application Discontinuation
-
1977
- 1977-06-03 DE DE19772725115 patent/DE2725115A1/de not_active Withdrawn
- 1977-06-07 CA CA280,003A patent/CA1107404A/en not_active Expired
- 1977-06-08 US US05/804,576 patent/US4143387A/en not_active Expired - Lifetime
- 1977-06-13 CH CH725377A patent/CH621891A5/de not_active IP Right Cessation
- 1977-06-13 SE SE7706828A patent/SE7706828L/xx unknown
- 1977-06-13 IT IT24617/77A patent/IT1083818B/it active
- 1977-06-13 GB GB24519/77A patent/GB1580847A/en not_active Expired
- 1977-06-14 BE BE178445A patent/BE855685A/xx unknown
- 1977-06-14 AU AU26077/77A patent/AU510665B2/en not_active Expired
- 1977-06-15 FR FR7718344A patent/FR2355378A1/fr not_active Withdrawn
- 1977-06-16 JP JP7057677A patent/JPS52154379A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU510665B2 (en) | 1980-07-10 |
| AU2607777A (en) | 1978-12-21 |
| FR2355378A1 (fr) | 1978-01-13 |
| BE855685A (fr) | 1977-12-14 |
| JPS52154379A (en) | 1977-12-22 |
| GB1580847A (en) | 1980-12-03 |
| NL7606483A (nl) | 1977-12-20 |
| US4143387A (en) | 1979-03-06 |
| SE7706828L (sv) | 1977-12-17 |
| DE2725115A1 (de) | 1977-12-29 |
| CA1107404A (en) | 1981-08-18 |
| IT1083818B (it) | 1985-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |