SE7706828L - Anordning for blandning av signaler - Google Patents

Anordning for blandning av signaler

Info

Publication number
SE7706828L
SE7706828L SE7706828A SE7706828A SE7706828L SE 7706828 L SE7706828 L SE 7706828L SE 7706828 A SE7706828 A SE 7706828A SE 7706828 A SE7706828 A SE 7706828A SE 7706828 L SE7706828 L SE 7706828L
Authority
SE
Sweden
Prior art keywords
mixing device
signal mixing
signal
mixing
Prior art date
Application number
SE7706828A
Other languages
English (en)
Swedish (sv)
Inventor
E F Stikvoort
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE7706828L publication Critical patent/SE7706828L/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
SE7706828A 1976-06-16 1977-06-13 Anordning for blandning av signaler SE7706828L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7606483A NL7606483A (nl) 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen.

Publications (1)

Publication Number Publication Date
SE7706828L true SE7706828L (sv) 1977-12-17

Family

ID=19826375

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7706828A SE7706828L (sv) 1976-06-16 1977-06-13 Anordning for blandning av signaler

Country Status (12)

Country Link
US (1) US4143387A (xx)
JP (1) JPS52154379A (xx)
AU (1) AU510665B2 (xx)
BE (1) BE855685A (xx)
CA (1) CA1107404A (xx)
CH (1) CH621891A5 (xx)
DE (1) DE2725115A1 (xx)
FR (1) FR2355378A1 (xx)
GB (1) GB1580847A (xx)
IT (1) IT1083818B (xx)
NL (1) NL7606483A (xx)
SE (1) SE7706828L (xx)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
FI953433A (fi) * 1995-07-14 1997-01-15 Nokia Mobile Phones Ltd Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin
US6051856A (en) * 1997-09-30 2000-04-18 Samsung Electronics Co., Ltd. Voltage-controlled resistor utilizing bootstrap gate FET

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236158A (xx) * 1958-02-17
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
FR1572934A (xx) * 1967-10-09 1969-06-27
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
JPS4831516B1 (xx) * 1969-10-17 1973-09-29
JPS4936515B1 (xx) * 1970-06-10 1974-10-01
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
US3999210A (en) * 1972-08-28 1976-12-21 Sony Corporation FET having a linear impedance characteristic over a wide range of frequency
JPS563675B2 (xx) * 1973-08-11 1981-01-26
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS584851B2 (ja) * 1975-10-27 1983-01-28 ソニー株式会社 シユウハスウヘンカンキ

Also Published As

Publication number Publication date
AU2607777A (en) 1978-12-21
DE2725115A1 (de) 1977-12-29
JPS52154379A (en) 1977-12-22
IT1083818B (it) 1985-05-25
US4143387A (en) 1979-03-06
CA1107404A (en) 1981-08-18
FR2355378A1 (fr) 1978-01-13
BE855685A (fr) 1977-12-14
GB1580847A (en) 1980-12-03
CH621891A5 (xx) 1981-02-27
NL7606483A (nl) 1977-12-20
AU510665B2 (en) 1980-07-10

Similar Documents

Publication Publication Date Title
AR216657A1 (es) Dispositivo indicador
SE7609325L (sv) Anordning for vexling av uppteckningsberare
SE7614092L (sv) Anordning for blandning av lekemedel
AT369315B (de) Mischeinrichtung
SE398140B (sv) Forbindningsanordning
AT346099B (de) Wiedergabegeraet
NL7702680A (nl) Signaalweergeefinrichting.
AT384674B (de) Gekapselte messeinrichtung
SE432234B (sv) Anordning for ombindning av balar
SE7703451L (sv) Anordning for detektering av storsignaler
AT346089B (de) Wiedergabegeraet
SE7714221L (sv) Anordning for tamponger
SE7710105L (sv) Anordning for kontroll av kokillkonicitet
SE7706828L (sv) Anordning for blandning av signaler
NL184646C (nl) Signaalmeetapparaat.
SE403672B (sv) Anordning for atergivning av signaler
SE8006675L (sv) Anordning for uppdelning av signaler
SE414441B (sv) Overforingsanordning for digitala signaler
IT1089885B (it) Dispositivo indicatore termosensibile
SE7703377L (sv) Anordning for overvakning av vetskeniva
ATA749376A (de) Wiedergabegerat
SE7701691L (sv) Forbindningsanordning
ATA330576A (de) Meldevorrichtung
SE7700540L (sv) Anordning for metning av krokning
SE7714018L (sv) Anordning for filtrering av en elektrisk signal