FI953433A - Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin - Google Patents

Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin Download PDF

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Publication number
FI953433A
FI953433A FI953433A FI953433A FI953433A FI 953433 A FI953433 A FI 953433A FI 953433 A FI953433 A FI 953433A FI 953433 A FI953433 A FI 953433A FI 953433 A FI953433 A FI 953433A
Authority
FI
Finland
Prior art keywords
signal
channel transistor
dimensional grid
grid construction
construction
Prior art date
Application number
FI953433A
Other languages
English (en)
Swedish (sv)
Other versions
FI953433A0 (fi
Inventor
Juha Rapeli
Original Assignee
Nokia Mobile Phones Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nokia Mobile Phones Ltd filed Critical Nokia Mobile Phones Ltd
Priority to FI953433A priority Critical patent/FI953433A/fi
Publication of FI953433A0 publication Critical patent/FI953433A0/fi
Priority to US08/679,343 priority patent/US5831303A/en
Publication of FI953433A publication Critical patent/FI953433A/fi

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FI953433A 1995-07-14 1995-07-14 Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin FI953433A (fi)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FI953433A FI953433A (fi) 1995-07-14 1995-07-14 Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin
US08/679,343 US5831303A (en) 1995-07-14 1996-07-10 Field effect transistor utilizing the gate structure two-dimensionally

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI953433A FI953433A (fi) 1995-07-14 1995-07-14 Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin

Publications (2)

Publication Number Publication Date
FI953433A0 FI953433A0 (fi) 1995-07-14
FI953433A true FI953433A (fi) 1997-01-15

Family

ID=8543786

Family Applications (1)

Application Number Title Priority Date Filing Date
FI953433A FI953433A (fi) 1995-07-14 1995-07-14 Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin

Country Status (2)

Country Link
US (1) US5831303A (fi)
FI (1) FI953433A (fi)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0899645A2 (en) * 1997-09-01 1999-03-03 Nokia Mobile Phones Ltd. Field effect transistors

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6317590B1 (en) 1997-12-23 2001-11-13 Nokia Mobile Phones, Ltd. Mixer for a receiver
DE19811853C1 (de) 1998-03-18 1999-09-09 Nokia Mobile Phones Ltd Kommunikationseinrichtung und Verfahren zu deren Betriebssteuerung
US6393260B1 (en) 1998-04-17 2002-05-21 Nokia Mobile Phones Limited Method for attenuating spurious signals and receiver
US20040124458A1 (en) * 2002-12-31 2004-07-01 Chandrasekharan Kothandaraman Programmable fuse device
CN116191843B (zh) * 2023-04-26 2023-07-25 广东华芯微特集成电路有限公司 栅极驱动电路架构、控制方法及bldc电机驱动电路

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5513433B2 (fi) * 1974-08-29 1980-04-09
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
NL7606483A (nl) * 1976-06-16 1977-12-20 Philips Nv Inrichting voor het mengen van signalen.
US4602170A (en) * 1983-09-08 1986-07-22 International Business Machines Corporation Resistive gate field effect transistor logic family
FI87860C (fi) * 1988-04-05 1993-02-25 Nokia Mobira Oy Differentialutgaongens koppling som enpolig
US5274256A (en) * 1990-01-08 1993-12-28 Sumitomo Electric Industries, Ltd. Microwave FET
FI89838C (fi) * 1990-08-30 1993-11-25 Nokia Mobile Phones Ltd Dynamiskt spaenningsintegreringsfoerfarande samt kopplingar foer utfoerande och tillaempande av foerfarandet
FI88567C (fi) * 1991-07-04 1993-05-25 Nokia Mobile Phones Ltd En generell synkronisk 2N+1 -divisor
FI88837C (fi) * 1991-08-15 1993-07-12 Nokia Mobile Phones Ltd Frekvensdividering med udda tal och decimaltal
FI93679C (fi) * 1991-10-23 1995-05-10 Nokia Mobile Phones Ltd Taajuusselektiivinen mikroliuskamuuntaja sekä diodisekoitin
FI89990C (fi) * 1991-12-19 1993-12-10 Nokia Mobile Phones Ltd Diodblandare
US5289059A (en) * 1992-06-05 1994-02-22 Nokia Mobile Phones, Ltd. Switched capacitor decimator
US5602501A (en) * 1992-09-03 1997-02-11 Sumitomo Electric Industries, Ltd. Mixer circuit using a dual gate field effect transistor
FI95980C (fi) * 1992-09-04 1996-04-10 Nokia Mobile Phones Ltd Menetelmä ja kytkentäjärjestely ajan mittaamiseksi tarkasti epätarkalla kellolla
FI93684C (fi) * 1993-04-23 1995-05-10 Nokia Mobile Phones Ltd Menetelmä signaalin käsittelemiseksi ja menetelmän mukainen signaalinkäsittelypiiri

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0899645A2 (en) * 1997-09-01 1999-03-03 Nokia Mobile Phones Ltd. Field effect transistors
EP0899645A3 (en) * 1997-09-01 2002-07-03 Nokia Corporation Field effect transistors

Also Published As

Publication number Publication date
US5831303A (en) 1998-11-03
FI953433A0 (fi) 1995-07-14

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