FR2355378A1 - Dispositif pour melanger des signaux - Google Patents

Dispositif pour melanger des signaux

Info

Publication number
FR2355378A1
FR2355378A1 FR7718344A FR7718344A FR2355378A1 FR 2355378 A1 FR2355378 A1 FR 2355378A1 FR 7718344 A FR7718344 A FR 7718344A FR 7718344 A FR7718344 A FR 7718344A FR 2355378 A1 FR2355378 A1 FR 2355378A1
Authority
FR
France
Prior art keywords
gate electrode
transistor
voltage
resistance
voltage drop
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7718344A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2355378A1 publication Critical patent/FR2355378A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)

Abstract

Le circuit de mélange de signaux conforme à l'invention comporte un transistor MOS à caractéristique quadratique idéale. Le transistor est du type D-MOS et comporte une électrode-porte à caractère de résistance dans laquelle une chute de tension est provoquée transversalement à la direction longitudinale du canal. Le point de fonctionnement du transistor est choisi de façon que la plage de tensions d'électrode-porte entre la tension de seuil et la tension à laquelle la fente de flanc acquiert sa valeur de saturation au cours du fonctionnement, se situe toujours dans l'étendue couverte par la chute de tension dans l'électrode-porte. Les signaux à mélanger sont fournis par exemple par voie capacitive par l'intermédiaire d'une deuxième électrode-porte situee au-dessus de l'électrode-porte à caractère de résistance et couplée capacitivement à celle-ci. Application à la réalisation de convertisseurs de fréquence.
FR7718344A 1976-06-16 1977-06-15 Dispositif pour melanger des signaux Withdrawn FR2355378A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7606483A NL7606483A (nl) 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen.

Publications (1)

Publication Number Publication Date
FR2355378A1 true FR2355378A1 (fr) 1978-01-13

Family

ID=19826375

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7718344A Withdrawn FR2355378A1 (fr) 1976-06-16 1977-06-15 Dispositif pour melanger des signaux

Country Status (12)

Country Link
US (1) US4143387A (fr)
JP (1) JPS52154379A (fr)
AU (1) AU510665B2 (fr)
BE (1) BE855685A (fr)
CA (1) CA1107404A (fr)
CH (1) CH621891A5 (fr)
DE (1) DE2725115A1 (fr)
FR (1) FR2355378A1 (fr)
GB (1) GB1580847A (fr)
IT (1) IT1083818B (fr)
NL (1) NL7606483A (fr)
SE (1) SE7706828L (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484707A1 (fr) * 1980-06-16 1981-12-18 Philips Corp Transistor lateral a effet de cham

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
FI953433A (fi) * 1995-07-14 1997-01-15 Nokia Mobile Phones Ltd Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin
US6051856A (en) * 1997-09-30 2000-04-18 Samsung Electronics Co., Ltd. Voltage-controlled resistor utilizing bootstrap gate FET

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801882A1 (de) * 1967-10-09 1969-05-29 Philco Ford Corp N Ges D St De Halbleiteranordnung vom Feldeffekt-Transistortyp
DE2050955A1 (de) * 1969-10-17 1971-06-24 Hitachi Ltd Verfahren zur Herstellung eines Feldeffekttransistors

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236158A (fr) * 1958-02-17
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
JPS4936515B1 (fr) * 1970-06-10 1974-10-01
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
US3999210A (en) * 1972-08-28 1976-12-21 Sony Corporation FET having a linear impedance characteristic over a wide range of frequency
JPS563675B2 (fr) * 1973-08-11 1981-01-26
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS584851B2 (ja) * 1975-10-27 1983-01-28 ソニー株式会社 シユウハスウヘンカンキ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1801882A1 (de) * 1967-10-09 1969-05-29 Philco Ford Corp N Ges D St De Halbleiteranordnung vom Feldeffekt-Transistortyp
DE2050955A1 (de) * 1969-10-17 1971-06-24 Hitachi Ltd Verfahren zur Herstellung eines Feldeffekttransistors

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/72 *
EXBK/79 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2484707A1 (fr) * 1980-06-16 1981-12-18 Philips Corp Transistor lateral a effet de cham

Also Published As

Publication number Publication date
GB1580847A (en) 1980-12-03
SE7706828L (sv) 1977-12-17
CA1107404A (fr) 1981-08-18
DE2725115A1 (de) 1977-12-29
JPS52154379A (en) 1977-12-22
US4143387A (en) 1979-03-06
BE855685A (fr) 1977-12-14
CH621891A5 (fr) 1981-02-27
AU2607777A (en) 1978-12-21
AU510665B2 (en) 1980-07-10
IT1083818B (it) 1985-05-25
NL7606483A (nl) 1977-12-20

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Legal Events

Date Code Title Description
ST Notification of lapse