ES291422A1 - Un sistema de circuito amplificador de senales electricas - Google Patents

Un sistema de circuito amplificador de senales electricas

Info

Publication number
ES291422A1
ES291422A1 ES0291422A ES291422A ES291422A1 ES 291422 A1 ES291422 A1 ES 291422A1 ES 0291422 A ES0291422 A ES 0291422A ES 291422 A ES291422 A ES 291422A ES 291422 A1 ES291422 A1 ES 291422A1
Authority
ES
Spain
Prior art keywords
transistor
zero
gate
curve
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0291422A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES291422A1 publication Critical patent/ES291422A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/185—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Indication And Recording Devices For Special Purposes And Tariff Metering Devices (AREA)
ES0291422A 1962-09-07 1963-09-06 Un sistema de circuito amplificador de senales electricas Expired ES291422A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US222129A US3233186A (en) 1962-09-07 1962-09-07 Direct coupled circuit utilizing fieldeffect transistors

Publications (1)

Publication Number Publication Date
ES291422A1 true ES291422A1 (es) 1964-02-16

Family

ID=22830968

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0291422A Expired ES291422A1 (es) 1962-09-07 1963-09-06 Un sistema de circuito amplificador de senales electricas

Country Status (10)

Country Link
US (1) US3233186A (es)
AT (1) AT249746B (es)
BE (1) BE637065A (es)
BR (1) BR6352316D0 (es)
CH (1) CH416752A (es)
DE (1) DE1212159B (es)
ES (1) ES291422A1 (es)
GB (1) GB1030124A (es)
NL (2) NL145730B (es)
SE (1) SE313602B (es)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL299911A (es) * 1951-08-02
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
US3455020A (en) * 1966-10-13 1969-07-15 Rca Corp Method of fabricating insulated-gate field-effect devices
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
USRE31580E (en) * 1967-06-08 1984-05-01 U.S. Philips Corporation Insulated gate field-effect transistor comprising a mesa channel and a thicker surrounding oxide
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3512099A (en) * 1967-09-28 1970-05-12 Tokyo Shibaura Electric Co Semiconductor amplifier wherein several metal oxide semiconductor field effect transistors are coupled on a substrate
US3544838A (en) * 1968-06-06 1970-12-01 Bendix Corp Headlamp time delay circuit and means for adjustment thereof
US3714575A (en) * 1970-08-07 1973-01-30 Amalgamated Music Ets Code controlled broadcasting system
US4032838A (en) * 1972-12-20 1977-06-28 Matsushita Electric Industrial Co., Ltd. Device for generating variable output voltage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2762875A (en) * 1952-11-15 1956-09-11 Rca Corp Stabilized cascade-connected semi-conductor amplifier circuits and the like
US2790856A (en) * 1953-08-24 1957-04-30 Motorola Inc Frequency selective transistor amplifier
US3030586A (en) * 1955-02-18 1962-04-17 Philco Corp Transistor circuit
US2822430A (en) * 1956-08-15 1958-02-04 Rca Corp Transistor amplifier circuit
FR1257194A (fr) * 1960-02-18 1961-03-31 Perfectionnements aux montages électriques à éléments semi-conducteurs dits tecnetrons
NL130600C (es) * 1960-03-22
NL267831A (es) * 1960-08-17
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor

Also Published As

Publication number Publication date
GB1030124A (en) 1966-05-18
US3233186A (en) 1966-02-01
AT249746B (de) 1966-10-10
BR6352316D0 (pt) 1973-09-18
CH416752A (de) 1966-07-15
DE1212159B (de) 1966-03-10
SE313602B (es) 1969-08-18
BE637065A (es)
NL145730B (nl) 1975-04-15
NL297602A (es)

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