BE855685A - Dispositif pour melanger des signaux - Google Patents
Dispositif pour melanger des signauxInfo
- Publication number
- BE855685A BE855685A BE178445A BE178445A BE855685A BE 855685 A BE855685 A BE 855685A BE 178445 A BE178445 A BE 178445A BE 178445 A BE178445 A BE 178445A BE 855685 A BE855685 A BE 855685A
- Authority
- BE
- Belgium
- Prior art keywords
- mixing signals
- mixing
- signals
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
- H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Networks Using Active Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7606483A NL7606483A (nl) | 1976-06-16 | 1976-06-16 | Inrichting voor het mengen van signalen. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE855685A true BE855685A (fr) | 1977-12-14 |
Family
ID=19826375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE178445A BE855685A (fr) | 1976-06-16 | 1977-06-14 | Dispositif pour melanger des signaux |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4143387A (xx) |
| JP (1) | JPS52154379A (xx) |
| AU (1) | AU510665B2 (xx) |
| BE (1) | BE855685A (xx) |
| CA (1) | CA1107404A (xx) |
| CH (1) | CH621891A5 (xx) |
| DE (1) | DE2725115A1 (xx) |
| FR (1) | FR2355378A1 (xx) |
| GB (1) | GB1580847A (xx) |
| IT (1) | IT1083818B (xx) |
| NL (1) | NL7606483A (xx) |
| SE (1) | SE7706828L (xx) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4399417A (en) * | 1980-06-06 | 1983-08-16 | Bell Telephone Laboratories, Incorporated | Integrated CRC filter circuit |
| US4300150A (en) * | 1980-06-16 | 1981-11-10 | North American Philips Corporation | Lateral double-diffused MOS transistor device |
| JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
| US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
| US4847517A (en) * | 1988-02-16 | 1989-07-11 | Ltv Aerospace & Defense Co. | Microwave tube modulator |
| FI953433A (fi) * | 1995-07-14 | 1997-01-15 | Nokia Mobile Phones Ltd | Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin |
| US6051856A (en) * | 1997-09-30 | 2000-04-18 | Samsung Electronics Co., Ltd. | Voltage-controlled resistor utilizing bootstrap gate FET |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL236158A (xx) * | 1958-02-17 | |||
| GB1153428A (en) * | 1965-06-18 | 1969-05-29 | Philips Nv | Improvements in Semiconductor Devices. |
| FR1572934A (xx) * | 1967-10-09 | 1969-06-27 | ||
| US3714522A (en) * | 1968-11-14 | 1973-01-30 | Kogyo Gijutsuin Agency Of Ind | Semiconductor device having surface electric-field effect |
| JPS4831516B1 (xx) * | 1969-10-17 | 1973-09-29 | ||
| JPS4936515B1 (xx) * | 1970-06-10 | 1974-10-01 | ||
| US3700976A (en) * | 1970-11-02 | 1972-10-24 | Hughes Aircraft Co | Insulated gate field effect transistor adapted for microwave applications |
| US3728695A (en) * | 1971-10-06 | 1973-04-17 | Intel Corp | Random-access floating gate mos memory array |
| US3999210A (en) * | 1972-08-28 | 1976-12-21 | Sony Corporation | FET having a linear impedance characteristic over a wide range of frequency |
| JPS563675B2 (xx) * | 1973-08-11 | 1981-01-26 | ||
| US4001860A (en) * | 1973-11-12 | 1977-01-04 | Signetics Corporation | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
| JPS584851B2 (ja) * | 1975-10-27 | 1983-01-28 | ソニー株式会社 | シユウハスウヘンカンキ |
-
1976
- 1976-06-16 NL NL7606483A patent/NL7606483A/xx not_active Application Discontinuation
-
1977
- 1977-06-03 DE DE19772725115 patent/DE2725115A1/de not_active Withdrawn
- 1977-06-07 CA CA280,003A patent/CA1107404A/en not_active Expired
- 1977-06-08 US US05/804,576 patent/US4143387A/en not_active Expired - Lifetime
- 1977-06-13 GB GB24519/77A patent/GB1580847A/en not_active Expired
- 1977-06-13 CH CH725377A patent/CH621891A5/de not_active IP Right Cessation
- 1977-06-13 IT IT24617/77A patent/IT1083818B/it active
- 1977-06-13 SE SE7706828A patent/SE7706828L/xx unknown
- 1977-06-14 AU AU26077/77A patent/AU510665B2/en not_active Expired
- 1977-06-14 BE BE178445A patent/BE855685A/xx unknown
- 1977-06-15 FR FR7718344A patent/FR2355378A1/fr not_active Withdrawn
- 1977-06-16 JP JP7057677A patent/JPS52154379A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| AU2607777A (en) | 1978-12-21 |
| DE2725115A1 (de) | 1977-12-29 |
| JPS52154379A (en) | 1977-12-22 |
| IT1083818B (it) | 1985-05-25 |
| US4143387A (en) | 1979-03-06 |
| CA1107404A (en) | 1981-08-18 |
| FR2355378A1 (fr) | 1978-01-13 |
| GB1580847A (en) | 1980-12-03 |
| SE7706828L (sv) | 1977-12-17 |
| CH621891A5 (xx) | 1981-02-27 |
| NL7606483A (nl) | 1977-12-20 |
| AU510665B2 (en) | 1980-07-10 |
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