NL7606483A - Inrichting voor het mengen van signalen. - Google Patents

Inrichting voor het mengen van signalen.

Info

Publication number
NL7606483A
NL7606483A NL7606483A NL7606483A NL7606483A NL 7606483 A NL7606483 A NL 7606483A NL 7606483 A NL7606483 A NL 7606483A NL 7606483 A NL7606483 A NL 7606483A NL 7606483 A NL7606483 A NL 7606483A
Authority
NL
Netherlands
Prior art keywords
mixing signals
mixing
signals
Prior art date
Application number
NL7606483A
Other languages
English (en)
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7606483A priority Critical patent/NL7606483A/xx
Priority to DE19772725115 priority patent/DE2725115A1/de
Priority to CA280,003A priority patent/CA1107404A/en
Priority to US05/804,576 priority patent/US4143387A/en
Priority to GB24519/77A priority patent/GB1580847A/en
Priority to SE7706828A priority patent/SE7706828L/xx
Priority to IT24617/77A priority patent/IT1083818B/it
Priority to CH725377A priority patent/CH621891A5/de
Priority to BE178445A priority patent/BE855685A/xx
Priority to AU26077/77A priority patent/AU510665B2/en
Priority to FR7718344A priority patent/FR2355378A1/fr
Priority to JP7057677A priority patent/JPS52154379A/ja
Publication of NL7606483A publication Critical patent/NL7606483A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/435—Resistive materials for field effect devices, e.g. resistive gate for MOSFET or MESFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Networks Using Active Elements (AREA)
NL7606483A 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen. NL7606483A (nl)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL7606483A NL7606483A (nl) 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen.
DE19772725115 DE2725115A1 (de) 1976-06-16 1977-06-03 Vorrichtung zum mischen von signalen
CA280,003A CA1107404A (en) 1976-06-16 1977-06-07 Device for mixing signals
US05/804,576 US4143387A (en) 1976-06-16 1977-06-08 Signal mixer including resistive and normal gate field-effect transistor
GB24519/77A GB1580847A (en) 1976-06-16 1977-06-13 Arrangements for mixing electrical signals
SE7706828A SE7706828L (sv) 1976-06-16 1977-06-13 Anordning for blandning av signaler
IT24617/77A IT1083818B (it) 1976-06-16 1977-06-13 Dispositivo per la miscelazione di segnali
CH725377A CH621891A5 (ja) 1976-06-16 1977-06-13
BE178445A BE855685A (fr) 1976-06-16 1977-06-14 Dispositif pour melanger des signaux
AU26077/77A AU510665B2 (en) 1976-06-16 1977-06-14 Fet for mixing signals
FR7718344A FR2355378A1 (fr) 1976-06-16 1977-06-15 Dispositif pour melanger des signaux
JP7057677A JPS52154379A (en) 1976-06-16 1977-06-16 Mixed signal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7606483A NL7606483A (nl) 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen.

Publications (1)

Publication Number Publication Date
NL7606483A true NL7606483A (nl) 1977-12-20

Family

ID=19826375

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7606483A NL7606483A (nl) 1976-06-16 1976-06-16 Inrichting voor het mengen van signalen.

Country Status (12)

Country Link
US (1) US4143387A (ja)
JP (1) JPS52154379A (ja)
AU (1) AU510665B2 (ja)
BE (1) BE855685A (ja)
CA (1) CA1107404A (ja)
CH (1) CH621891A5 (ja)
DE (1) DE2725115A1 (ja)
FR (1) FR2355378A1 (ja)
GB (1) GB1580847A (ja)
IT (1) IT1083818B (ja)
NL (1) NL7606483A (ja)
SE (1) SE7706828L (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4399417A (en) * 1980-06-06 1983-08-16 Bell Telephone Laboratories, Incorporated Integrated CRC filter circuit
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
JPS5955071A (ja) * 1982-09-24 1984-03-29 Hitachi Micro Comput Eng Ltd 不揮発性半導体装置
US4789882A (en) * 1983-03-21 1988-12-06 International Rectifier Corporation High power MOSFET with direct connection from connection pads to underlying silicon
US4847517A (en) * 1988-02-16 1989-07-11 Ltv Aerospace & Defense Co. Microwave tube modulator
FI953433A (fi) * 1995-07-14 1997-01-15 Nokia Mobile Phones Ltd Kaksiulotteista hilarakennetta käyttävä kanavatransistori ja sen käyttäminen signaalin prosessointiin
US6051856A (en) * 1997-09-30 2000-04-18 Samsung Electronics Co., Ltd. Voltage-controlled resistor utilizing bootstrap gate FET

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL236158A (ja) * 1958-02-17
GB1153428A (en) * 1965-06-18 1969-05-29 Philips Nv Improvements in Semiconductor Devices.
FR1572934A (ja) * 1967-10-09 1969-06-27
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
JPS4831516B1 (ja) * 1969-10-17 1973-09-29
JPS4936515B1 (ja) * 1970-06-10 1974-10-01
US3700976A (en) * 1970-11-02 1972-10-24 Hughes Aircraft Co Insulated gate field effect transistor adapted for microwave applications
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
US3999210A (en) * 1972-08-28 1976-12-21 Sony Corporation FET having a linear impedance characteristic over a wide range of frequency
JPS563675B2 (ja) * 1973-08-11 1981-01-26
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS584851B2 (ja) * 1975-10-27 1983-01-28 ソニー株式会社 シユウハスウヘンカンキ

Also Published As

Publication number Publication date
GB1580847A (en) 1980-12-03
SE7706828L (sv) 1977-12-17
CA1107404A (en) 1981-08-18
DE2725115A1 (de) 1977-12-29
JPS52154379A (en) 1977-12-22
US4143387A (en) 1979-03-06
BE855685A (fr) 1977-12-14
CH621891A5 (ja) 1981-02-27
AU2607777A (en) 1978-12-21
FR2355378A1 (fr) 1978-01-13
AU510665B2 (en) 1980-07-10
IT1083818B (it) 1985-05-25

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Legal Events

Date Code Title Description
BV The patent application has lapsed