CH616276A5 - Integrated injection circuit - Google Patents
Integrated injection circuit Download PDFInfo
- Publication number
- CH616276A5 CH616276A5 CH9178A CH9178A CH616276A5 CH 616276 A5 CH616276 A5 CH 616276A5 CH 9178 A CH9178 A CH 9178A CH 9178 A CH9178 A CH 9178A CH 616276 A5 CH616276 A5 CH 616276A5
- Authority
- CH
- Switzerland
- Prior art keywords
- gate
- effect transistor
- field effect
- substrate
- integrated injection
- Prior art date
Links
- 238000002347 injection Methods 0.000 title claims description 14
- 239000007924 injection Substances 0.000 title claims description 14
- 230000005669 field effect Effects 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 10
- 230000000873 masking effect Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 11
- 230000007704 transition Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09414—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors with gate injection or static induction [STIL]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
- H03K19/09418—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors in combination with bipolar transistors [BIFET]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0952—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using Schottky type FET MESFET
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/213—Channel regions of field-effect devices
- H10D62/221—Channel regions of field-effect devices of FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/211—Design considerations for internal polarisation
- H10D89/213—Design considerations for internal polarisation in field-effect devices
- H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU772441385A SU602055A1 (ru) | 1977-01-06 | 1977-01-06 | Интегральный логический элемент |
| SU772537101A SU646391A1 (ru) | 1977-11-01 | 1977-11-01 | Полевой транзистор |
| SU2537006 | 1977-11-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH616276A5 true CH616276A5 (en) | 1980-03-14 |
Family
ID=27356306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH9178A CH616276A5 (en) | 1977-01-06 | 1978-01-04 | Integrated injection circuit |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS53108291A (en, 2012) |
| CH (1) | CH616276A5 (en, 2012) |
| CS (1) | CS199407B1 (en, 2012) |
| DD (1) | DD136907A1 (en, 2012) |
| DE (1) | DE2800335A1 (en, 2012) |
| FR (1) | FR2377123A1 (en, 2012) |
| GB (1) | GB1565918A (en, 2012) |
| NL (1) | NL7800046A (en, 2012) |
| PL (1) | PL119495B1 (en, 2012) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5540051A (en) * | 1978-09-12 | 1980-03-21 | Mitsubishi Electric Corp | T-joint and production thereof |
| JPS573651Y2 (en, 2012) * | 1979-10-08 | 1982-01-22 | ||
| GB2130790B (en) * | 1982-10-26 | 1986-04-16 | Plessey Co Plc | Integrated injection logic device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2321796C2 (de) * | 1973-04-30 | 1982-07-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Feldeffekttransistor |
| JPS5811102B2 (ja) * | 1975-12-09 | 1983-03-01 | ザイダンホウジン ハンドウタイケンキユウシンコウカイ | 半導体集積回路 |
-
1977
- 1977-12-29 CS CS779005A patent/CS199407B1/cs unknown
-
1978
- 1978-01-02 NL NL7800046A patent/NL7800046A/xx not_active Application Discontinuation
- 1978-01-04 DD DD78203095A patent/DD136907A1/xx unknown
- 1978-01-04 DE DE19782800335 patent/DE2800335A1/de not_active Ceased
- 1978-01-04 CH CH9178A patent/CH616276A5/de not_active IP Right Cessation
- 1978-01-05 GB GB395/78A patent/GB1565918A/en not_active Expired
- 1978-01-05 PL PL1978203827A patent/PL119495B1/pl unknown
- 1978-01-05 FR FR7800244A patent/FR2377123A1/fr active Granted
- 1978-01-06 JP JP48078A patent/JPS53108291A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2800335A1 (de) | 1978-07-13 |
| PL203827A1 (pl) | 1978-10-23 |
| PL119495B1 (en) | 1982-01-30 |
| CS199407B1 (en) | 1980-07-31 |
| FR2377123B1 (en, 2012) | 1980-05-16 |
| FR2377123A1 (fr) | 1978-08-04 |
| NL7800046A (nl) | 1978-07-10 |
| DD136907A1 (de) | 1979-08-01 |
| GB1565918A (en) | 1980-04-23 |
| JPS53108291A (en) | 1978-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2266040C2 (en, 2012) | ||
| DE4110369C2 (de) | MOS-Halbleiterbauelement | |
| DE3942640C2 (de) | MOS-Halbleitervorrichtung | |
| DE19651247C2 (de) | Eingabe/Ausgabeschutzschaltung | |
| DE10101081B4 (de) | Schottky-Diode | |
| DE2939193C2 (en, 2012) | ||
| DE2047166B2 (de) | Integrierte Halbleiteranordnung | |
| DE2554296A1 (de) | Integrierte schaltung mit komplementaeren feldeffekttransistoren | |
| DE2459562A1 (de) | Integrierte schaltungen | |
| DE102004059627B4 (de) | Halbleitervorrichtung mit einem Hochpotentialinselbereich | |
| DE1489894A1 (de) | In zwei Richtungen schaltbares und steuerbares Halbleiterbauelement | |
| DE69934874T2 (de) | Scr bauteil mit niedriger schwell- und haltespannung für esd schutz | |
| EP0052860B1 (de) | Monolithisch integrierte Gleichrichter-Brückenschaltung | |
| DE2953931C2 (en, 2012) | ||
| DE2730373A1 (de) | Integrierte halbleiter-logikschaltung | |
| DE4310606C2 (de) | GTO-Thyristoren | |
| DE68916697T2 (de) | Gate-gesteuerte Zweirichtungshalbleiterschaltungseinrichtung. | |
| DE19810338A1 (de) | Leistungshalbleiterbauteil | |
| DE2531249A1 (de) | Vielschicht-thyristor | |
| DE7141390U (de) | Halbleiteranordnung insbesondere feldeffekttransistor mit diffundierten schutzbereichen und/oder isolierenden torbereichen | |
| EP0017980B1 (de) | Thyristor mit Steuerung durch Feldeffekttransistor | |
| DE19534388A1 (de) | IGBT-Transistorbauteil | |
| EP0656659B1 (de) | ESD-Schutzstruktur für integrierte Schaltungen | |
| CH616276A5 (en) | Integrated injection circuit | |
| EP0135136A2 (de) | Integrierte RS-Flipflop-Schaltung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |